Analog Integrated Circuits Design

Lecture 1

Dr. Hassan Mostafa

hmoustafa@aucegypt.edu

Information
Lectures time: Tuesdays 2-5 PM
Office hours:
By appointment (hmoustafa@aucegypt.edu)

Marking Scheme:

Midterm (20%)
Quizzes (20%) Each lectureProject (20%)
Final Exam (40%)

Reference books:

Analog Integrated Circuit Design (2nd edition), John Wiley & Sons, Inc.
By: Tony Chan Carusone, David A. Johns and Kenneth W. Martin
Design of Analog CMOS Integrated Circuits, McGraw-Hill. By: Behzad
Razavi
Microelectronic Circuits (6th edition), Oxford University Press, By K.
Smith and A. Sedra
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Course outline
Review on CMOS
Basic current mirrors and single stage
amplifiers
Frequency response and differential
amplifiers
Feedback amplifiers
Op-amp design
Noise and Linearity analysis
Active filters
Data Converters
Oscillators and Phase Locked Loops
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Why Analog???
Naturally-occurring signals, e.g., RF received
signal, voice and video, are analog.
System and environment non-idealities often
make it necessary to treat digital signals as
analog (Disk Drive Retrieved Data).

Why Analog???
Typical real world implementation:
Analog Front End

Analog Versus Digital

More sensitive to noise and cross-talk
More sensitive to second-order effects in
devices
More difficult to automate
More difficult to model and simulate
We want to design analog circuits in
mainstream VLSI technologies
i.e., CMOS, with no additional processing steps,
trimming, factory calibration, etc.

CMOS advance is based on the digital

world high demand

Review on CMOS
MOS device
MOS = Metal Oxide Semiconductor
Source/Drain are interchangeable
Channel length L represents the CMOS scaling
16nm CMOS technology is available currently

Silicon dioxide is 1.6nm in CMOS 65nm and high-K

materials are used in sub-65nm technologies
Body connection

Review on CMOS
MOS device
nMOS symbols

pMOS symbols

Review on CMOS
VGS negative

Accumulated charge (p-

p+)
Two back-to-back diodes
Only leakage current will
flow

VGS positive

Depletion region below the

channel (p- depletion)
channel becomes an n
region with mobile
electrons connecting the
drain and source regions
Inversion occurs for a
sufficient VGS positive
voltage
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Review on CMOS
Threshold voltage (Vtn) <nMOS>
VGS at which the concentration of the electrons under the
gate is equal to the concentration of the holes in the p
substrate far from the gate

VGS > Vtn

n-type channel present, and conduction between the
drain and the source can occur (ION)

VGS < Vtn

The transistor is assumed to be OFF and no current flows
In realtity, sub-threshold current flows and exhibit a large
problem in scaled CMOS technologies
ION / IOFF ratio is a figure of merit for CMOS devices

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Review on CMOS
Overdrive voltage: Veff = VGS Vt
Long channel transistors

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Review on CMOS
Second order effects
Channel length modulation ()
Add [1+ (VDS - Veff)] to the saturation equation

Body effect
The body terminal affects Vt
Body bias is used to control Vt
The body terminal is called the back gate

pMOS transistors equations

Replace Vtn |Vtp|, n p
Replace VGS VSG, VDS VSD, VSB VBS
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Review on CMOS
Small signal model
gm = transconductance (A/V)

Circuit analysis

Circuit design

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Review on CMOS
Example

ID for a particular NMOS device with an aspect ratio of

10 is plotted versus VGS for constant drain, source, and
body voltages.
From this data, estimate Vtn and n * Cox

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Review on CMOS
Solution

gm = ID/VGS

Vtn = 0.45V
n * Cox = 270 A/V2

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Review on CMOS
High frequency model
Main capacitances are:
gate capacitance
Miller capacitance

Lov = overlap distance between

gate and drain junctions

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Review on CMOS
Analog circuits Figures of Merit (FoM)

Intrinsic gain (Ai)

is inversely proportional to L
How technology scaling affects on Ai ??

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Review on CMOS
Analog circuits Figures of Merit (FoM)

Unity gain frequency (ft)

a measure of the maximum operating frequency at which the

transistor might prove useful

How technology scaling affects on ft ??

Trade-off between Ai and ft

<Constant Gain-BW product>

Explain ????
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20

Review on CMOS
Advanced MOS modeling
Sub-threshold Operation (Weak Inversion)
When Veff is negative (i.e., VGS < Vt)
Drain current is given by exponential relationship

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Review on CMOS
Advanced MOS modeling
Sub-threshold slope (S)
S = ln(10) * n* KB T /q = 2.3
n KB T /q
Ideal value = 60mV/ decade
when n = 1
Practical value =
90mV/decade when
IOFF
n =1.5

IOFF is a strong function of

temperature T

VGS

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Review on CMOS
Advanced MOS modeling
Velocity saturation and mobility degradation

Short L values result in large electric field

When the carriers reach the maximum velocity, the velovity is
constant

W
V 2 min
I D nCox (Veff *Vmin
)
L
2
Vmin Minimum (VDS ,Veff ,VDS SAT )

Note that mobility is defined as the proportionality constant

between the electric field and the carrier velocity

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Review on CMOS
Technology scaling

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Review on CMOS
VARIABILITY AND MISMATCH
When integrated circuits are manufactured, a variety of
effects cause the effective sizes and electrical properties
of the components to differ from those intended by the
designer
Systematic variations
due to lithographic techniques
exhibits spatial correlation

Random variations (Mismatch)

due to the small number of dopants used in nowadays CMOS
devices (i.e., the number of dopant atoms is close to 100 atoms
in 45nm technology which cause random dopant fluctuations)
uncorrelated (i.e., two neighbor identical transistors will have
completely different parameters such as Vt and mobility)
Vt o / (W*L)1/2

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Review on CMOS
Problems

1.10 and 1.14

Next lecture is a quiz

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