It can be used in the manufacture of a variety of sensors, such as temperature sensor, gas sensor, photoelectric switch and so on. Because VO 2 undergoes metal-insulator transition (MIT) at a critical temperature of 68 C. Now researchers can produce different length and width VO 2 nanowire in different preparation environment, and can change the phase-transition temperature by doping different material. And researchers hope to find a suitable condition to grow long VO2 nanowire, the relationship between the length and the experimental environment, and get broader phase-transition temperature. There are two main preparation methods --- chemical vapor deposition and hydrothermal method. Usually researchers use V 2O5 powder or VO2 powder as raw material to grow the VO2 nanowire. The structure-properties relationship: Lattice structure mutation will happen when the VO2 phase change. When the temperature is lower than 68 C, the VO2 is monoclinic crystal structure. And when the temperature is higher than 68 C, the VO2 is rutile structure. Due to changes in structure, the electrical conductivity change. Because the VO2 undergoes metal-insulator transition at a special temperature, and TMIT can be decreased or increased depending on the oxidation state of the dopant, so it can use in the manufacture of sensors. Which can help us get more accurate and sensitive sensors. If we can grow suitable length and phase-transition temperature according to our needs, those kind of sensors can has wonderfully potential application. References: 1:Synthesis and room temperature CH4 gas sensing properties of vanadium dioxide nanorods Wenjiao Li, Jiran Liang, Materials Letters 173 (2016) 199202 2:Real-Time Structural and Electrical Characterization of MetalInsulator Transition in Strain-Modulated Single-Phase VO2 Wires with Controlled Diameters, Min-Woo Kim, Sung-Soo Ha, Nano Letters DOI: 10.1021/acs.nanolett.6b00719 3:Axially Engineered MetalInsulator Phase Transition by Graded Doping VO2 Nanowires, Sangwook Lee, Chun Cheng, J. Am. Chem. Soc. 2013, 135, 48504855 4: , 2001 06