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Three Dimensional Stress Mapping of Silicon Surrounded by Copper Filled through Silicon
Vias Using Polychromator-Based Multi-Wavelength Micro Raman Spectroscopy
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2010 Appl. Phys. Express 3 086601
(http://iopscience.iop.org/1882-0786/3/8/086601)
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2.54eV
488.0nm
2.41eV
514.5nm
290nm
490nm
645nm
Si: 1.12eV
Probing Depth =
Resolution:
Spatial (m)
Wavelength (nm)
Wavenumber (cm -1)
3.7~1.0
0.0022
0.105
3.9~1.1
0.0021
0.085
4.1~1.1
0.0019
0.071
Stress (MPa)
46
37
31
Stage (m)
0.5
0.5
0.5
086601-1
A. D. Trigg et al.
Intensity (Counts)
A
Measurement Interval: 2m
X: 74 points (146m)
Y: 83 points (164m)
Total: 6142 points
(3)
(1)
Compressive
Tensile
12000
457.9nm
A
10000 488.0nm
8000 514.5nm
6000
4000
2000
Stress Free
0
512 514 516 518 520 522 524 526 528
Raman Shift (cm -1 )
(a)
Intensity (Counts)
(2)
(b)
Tensile
Compressive
12000
457.9nm
B
10000 488.0nm
8000 514.5nm
6000
4000
2000
Stress Free
0
512 514 516 518 520 522 524 526 528
Raman Shift (cm-1)
4.6
4.4
4.2
20000
300
200
520.6
Cu
Filled
TSV
520.4
100
0
520.2
5.0
4.8
(2)
457.9nm
488.0nm
514.5nm
4.8
4.6
Cu
Filled
TSV
4.4
4.2
20000
15000
0
-80 -60 -40 -20 0
20 40 60
Measurement Position (m)
80
520.6
520.4
520.2
5.0
(3)
300
200
100
Cu
Filled
TSV
4.8
4.6
4.4
Cu
Filled
TSV
15000
10000
5000
520.8
B
457.9nm
488.0nm
514.5nm
4.2
20000
15000
10000
521.0
Stress (MPa)
520.2
5.0
520.8
100
520.4
521.0
300
200
520.6
(1)
457.9nm
488.0nm
514.5nm
Stress (MPa)
520.8
521.0
Stress (MPa)
10000
Cu
Filled
TSV
5000
0
-80 -60 -40 -20 0
20 40 60
Measurement Position (m)
(a)
(b)
80
5000
Cu
Filled
TSV
0
-80 -60 -40 -20 0
20 40 60
Measurement Position (m)
80
(c)
Fig. 4. Multi-wavelength Raman line scan summaries along (1)(3) of Fig. 2(b). Line scans along (a) TSV-free area, (b) 40 m diameter TSVs, and
(c) 20 m diameter TSVs.
086601-2
514.5nm
Cu Filled TSVs
Cu Filled TSVs
Interpretation
Compressive
Cu Filled TSVs
488.0nm
MPa
300
cm-1
521.0
200
520.8
100
Cu Filled TSVs
Cu Filled TSVs
Cu Filled TSVs
Cu Filled TSVs
Cu Filled TSVs
520.6
520.4
520.2
Poor
100
520.0
cm-1
5.0
4.8
4.6
4.4
Good
Cu Filled TSVs
Crystallinity
Tensile
Stress
Free
Raman Signal
Intensity
Intensity
FWHM
Raman Shift
457.9nm
A. D. Trigg et al.
4.2
4.0
Counts
x103
20
15
10
5
0
Fig. 5.
Multi-wavelength Raman area maps of TSV arrays of 20 and 40 m diameter Cu plugs within the white square in Figs. 2(a) and 2(b).
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086601-3