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Three Dimensional Stress Mapping of Silicon Surrounded by Copper Filled through Silicon
Vias Using Polychromator-Based Multi-Wavelength Micro Raman Spectroscopy

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2010 Appl. Phys. Express 3 086601
(http://iopscience.iop.org/1882-0786/3/8/086601)
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Applied Physics Express 3 (2010) 086601

Three Dimensional Stress Mapping of Silicon Surrounded by Copper


Filled through Silicon Vias Using Polychromator-Based
Multi-Wavelength Micro Raman Spectroscopy
Alastair David Trigg, Li Hong Yu, Cheng Kuo Cheng, Rakesh Kumar, Dim Lee Kwong, Takeshi Ueda1 ,
Toshikazu Ishigaki1 , Kitaek Kang1 , and Woo Sik Yoo1
Institute of Microelectronics/A STAR, 11 Science Park Road, 117685, Singapore
1
WaferMasters, Inc., 246 East Gish Road, San Jose, CA 95112, U.S.A.
Received June 7, 2010; accepted July 2, 2010; published online July 23, 2010
Three dimensional (3D) stress distributions in Si, surrounded by copper (Cu) filled through silicon vias (TSVs) with various dimensions and
pitches, are non-destructively characterized and stress contour maps generated at different depths using a long focal length, polychromatorbased, multi-wavelength micro-Raman spectroscopy system. It was found that stress and crystallinity in Si (in both planar and depth directions)
was strongly influenced by the proximity to a TSV, as well as, the dimensions of the TSV. In addition to characterizing semiconductor materials,
Multi-wavelength micro-Raman spectroscopy was extremely effective for characterizing process-induced variations in crystalline stress and
quality where 3D interconnects and packaging technology is introduced. # 2010 The Japan Society of Applied Physics
DOI: 10.1143/APEX.3.086601

ince traditional device scaling is facing increasing


diculties due to its physical limits, there is
increasing emphasis on using advanced packaging
technologies to provide functional improvements with
existing device dimensions. Using three dimensional (3D)
interconnect technology for stacks in semiconductor chips
and die with through silicon vias (TSVs), enables the
integration of multi-functional chips and die in a single
package and more ecient use of available space.13) 3D
packaging technology is becoming very attractive in terms
of improved design exibility and reduced fabrication cost.
Typically these TSVs are lled with copper (Cu). The
large dierence in the temperature coecient of expansion
(TCE) between Si (2:5  10 6 / C) and Cu (17:5 
10 6 / C) is an area of considerable concern. It poses a risk
of undesired stress generation in the thin silicon device
layers with a potential adverse impact on device performance and reliability.47) Since the impact of density and
dimensions of TSVs in 3D interconnect design and layouts
is of great interest, a detailed study of local stress eld
generation in TSV processing is critical not only for device
reliability and yield, but also from the point of view of TSV
layout and density. Local stress characterization studies by
micro-Raman spectroscopy of Si, adjacent to TSVs are being
actively pursued by many research groups using conventional Raman measurement systems which have lower
spectral resolution with but a single and longer wavelength
excitation.810) The lower spectral resolution and longer
wavelength excitation make accurate stress measurement
more dicult and are incapable of stress depth proling.
Critical information for understanding process-induced local
strains in 3D interconnects cannot be collected by conventional micro-Raman spectrometers. Accurate and reliable
stress characterization, with as measured (without curve
tting), stress resolution of 50 MPa, require a very high
resolution Raman system.
In this paper, we have studied 3D stress distributions in Si
surrounded by Cu lled TSVs, with various dimensions and
pitches, to understand the potential impact of TSV layouts on
device performance and reliability. To overcome the limitations of previous Raman studies, the stress measurement was
done using a fully automated, long focal length (2.0 m),

Probing Depth : ~1/2 of Penetration Depth


2.71eV
457.9nm

2.54eV
488.0nm

2.41eV
514.5nm

290nm

490nm

645nm

Si: 1.12eV
Probing Depth =
Resolution:
Spatial (m)
Wavelength (nm)
Wavenumber (cm -1)

3.7~1.0
0.0022
0.105

3.9~1.1
0.0021
0.085

4.1~1.1
0.0019
0.071

Stress (MPa)

46

37

31

Stage (m)

0.5

0.5

0.5

Fig. 1. Summary of measurement capability of the MRS-300 with


various excitation wavelengths of the multi-wavelength Ar laser.

polychromator-based, multi-wavelength micro-Raman spectroscopy system by WaferMasters, the MRS-300 system,


designed specically for in-line process and material property
monitoring applications. Three major spectral lines (457.9,
488.0, and 514.5 nm) from a multi-wavelength Ar ion laser
are used as the excitation source for stress depth proling.
The design concept, operating principles and system
performance, along with semiconductor characterization
examples of the multi-wavelength, micro-Raman system
(MRS-300) has been reported by Yoo et al.1113) The system
is designed to sequentially measure Raman signals under
various excitation wavelengths, without sample movement
or calibration, between switching of excitation wavelengths.
2D and/or 3D maps of Raman shift, full-width-at-halfmaximum (FWHM) and intensity from samples can be
generated from data collected under dierent excitation
wavelengths (or penetration depths). The unique features
of the MRS-300 system provide powerful insights into the
sample under characterization. The measurement capability
of the system is summarized in Fig. 1.
Stress free silicon exhibits a sharp and strong Raman peak
at 520:3 cm 1 , corresponding to the optical phonon energy
of Si (64 meV) regardless of excitation wavelength. Raman

086601-1

# 2010 The Japan Society of Applied Physics

Appl. Phys. Express 3 (2010) 086601

A. D. Trigg et al.

Intensity (Counts)

A
Measurement Interval: 2m
X: 74 points (146m)
Y: 83 points (164m)
Total: 6142 points

(3)

(1)

Compressive
Tensile
12000
457.9nm
A
10000 488.0nm
8000 514.5nm
6000
4000
2000
Stress Free
0
512 514 516 518 520 522 524 526 528
Raman Shift (cm -1 )

(a)

Intensity (Counts)

(2)

(b)

Fig. 2. Micro photographs of TSV arrays of 20 and 40 m diameter


Cu plugs. Measurement intervals of Raman mapping using the MRS-300
system under 457.9, 488.0, and 514.5 nm excitation. Raw Raman data
from measurement points (A and B), line scan data [(1)(3)] and area
maps within the white square are shown in Figs. 3 to 5.

Tensile
Compressive
12000
457.9nm
B
10000 488.0nm
8000 514.5nm
6000
4000
2000
Stress Free
0
512 514 516 518 520 522 524 526 528
Raman Shift (cm-1)

4.6
4.4

4.2
20000

300
200

520.6

Cu
Filled
TSV

520.4

100
0

520.2
5.0

Intensity (Counts) FWHM (cm -1)

4.8

(2)

457.9nm
488.0nm
514.5nm

4.8
4.6

Cu
Filled
TSV

4.4

4.2
20000

15000

0
-80 -60 -40 -20 0
20 40 60
Measurement Position (m)

80

520.6
520.4
520.2
5.0

(3)

300
200
100

Cu
Filled
TSV

4.8
4.6
4.4

Cu
Filled
TSV

15000

10000

5000

520.8

B
457.9nm
488.0nm
514.5nm

4.2
20000

15000

10000

521.0

Stress (MPa)

520.2
5.0

520.8

Raman Shift (cm-1)

100

520.4

521.0

Intensity (Counts) FWHM (cm -1)

300
200

520.6

FWHM (cm -1)


Intensity (Counts)

(1)

457.9nm
488.0nm
514.5nm

Stress (MPa)

520.8

Raman Shift (cm-1)

521.0

Stress (MPa)

Raman Shift (cm -1)

Fig. 3. Raw Raman measurement data taken at points A and B of


Fig. 2(b) using the MRS-300 system with 457.9, 488.0, and 514.5 nm
excitation, demonstrating very high wavenumber resolution and slight
shift due to the difference in crystalline stress between points A and B.

10000

Cu
Filled
TSV

5000

0
-80 -60 -40 -20 0
20 40 60
Measurement Position (m)

(a)

(b)

80

5000

Cu
Filled
TSV

0
-80 -60 -40 -20 0
20 40 60
Measurement Position (m)

80

(c)

Fig. 4. Multi-wavelength Raman line scan summaries along (1)(3) of Fig. 2(b). Line scans along (a) TSV-free area, (b) 40 m diameter TSVs, and
(c) 20 m diameter TSVs.

peak position shifts towards the higher wavenumber side


when Si is under compressive stress. The magnitude of the
shift of peak position is proportional to the stress in the Si. The
Raman signal shift of 1.0 cm 1 from Si towards the higher
wavenumber side is equivalent to compressive stress of 434
MPa. Tensile stress of 434 MPa results in a Raman signal
shift of 1.0 cm 1 from Si towards the lower wavenumber side.
200 mm diameter Si wafers, with various TSV diameters
and layouts, were prepared. The TSV diameters varied from
20 to 60 m and were lled with Cu plugs. Details of the
fabrication technology are reported elsewhere.14,15) Three
dierent pitches (1 : 2, 1 : 3, and 1 : 4) of TSV chains were
fabricated for each TSV diameter. Figure 2 shows microphotographs of TSV arrays of 20 and 40 m diameter Cu
plugs. Raman spectra were measured within the white
rectangle of Figs. 2(a) and 2(b) with 2 m intervals in both
horizontal and vertical directions. Figure 3 shows raw
Raman measurement data taken at points A and B of
Fig. 2(b) along 20 m TSVs using the MRS-300 system
under 457.9, 488.0, and 514.5 nm excitation. The Raman

spectra demonstrate the very high wavenumber resolution


of the MRS-300 system and show the slight shift due to
dierence in crystalline stress between points A and B.
The Raman spectra from positions A and B were chosen
to demonstrate how small shifts of Raman spectra and
signicantly dierent crystalline stress are present between
measurement points. The point B is under more compressive
stress than point A. The stress dierence between points A
and B are approximately 157.87 and 104 MPa under 457.9,
488.0, and 514.5 nm excitation. Thus, signicant stress
variation in the depth direction was experimentally veried.
From area mapping data, Raman spectra along lines of
(1)(3) in Fig. 2(b) were selected and analyzed as line scan
data. Raman shift, FWHM and intensity of measurement
points along a TSV-free area (a), 40 m dia TSVs (b), and
20 m TSVs (c) are plotted in Figs. 4(a)4(c). The line
scan summary (a), along the open area without TSVs
(line 1), shows the least variation in all three factors (i.e.,
Raman shift, FWHM and intensity). The line scan summary
(b) along 40 m TSVs (line 2) shows relatively small

086601-2

# 2010 The Japan Society of Applied Physics

Appl. Phys. Express 3 (2010) 086601

514.5nm

Cu Filled TSVs

Cu Filled TSVs

Interpretation
Compressive

Cu Filled TSVs

488.0nm

MPa
300

cm-1
521.0

200

520.8

100

Cu Filled TSVs

Cu Filled TSVs

Cu Filled TSVs

Cu Filled TSVs

Cu Filled TSVs

520.6
520.4
520.2

Poor

100

520.0
cm-1
5.0
4.8
4.6
4.4

Good

Cu Filled TSVs

Crystallinity

Tensile

Stress
Free

Raman Signal
Intensity

Intensity

FWHM

Raman Shift

457.9nm

A. D. Trigg et al.

4.2
4.0
Counts
x103
20
15
10
5
0

Fig. 5.

Multi-wavelength Raman area maps of TSV arrays of 20 and 40 m diameter Cu plugs within the white square in Figs. 2(a) and 2(b).

variation in Raman shift (0:2 cm 1 , equivalent to 87 MPa


in stress variation) for all three excitation wavelengths.
However, FWHM values varied signicantly (up to
0.3 cm 1 ) especially under 514.5 nm excitation, implying
large variation of crystallinity in the depth direction. For the
line scan (c), along 20 m TSVs, (line 3) shows the largest
compressive stress values (up to 250 MPa) and the largest
variations in all three factors in both lateral and depth
directions, under all excitation wavelengths. Multi-wavelength Raman measurement results clearly show general
trends in the amount of Si stress, crystal quality and their
variations in lateral and depth directions as a function of
TSV dimensions, pitch and arrangement.
Figure 5 shows 2D contour maps of Raman shift, FWHM
and intensity under dierent excitation wavelengths. Inuence of the TSV dimensions, pitches and arrangement, on
Raman shift, FWHM and intensity are well characterized with
visual images. The MRS-300 system can automatically generate 3D maps of various parameters, as seen in the previous
report.13) Due to the space limitation, 3D maps are not shown.
Similar to transistor scaling, TSV scaling is in progress at a
rapid pace. Understanding of the eect of TSV dimensions,
pitch and arrangements on stress, crystallinity, plastic
deformation, defect generation, device performance and
device reliability must be studied in detail from both the
experimental and simulation side. Non-destructive 3D stress
characterization techniques, using a multi-wavelength microRaman spectrometer system is extremely useful in this regard.
The rst practical demonstration of 3D stress mapping of TSV
test structures using multi-wavelength Raman spectrometer
system has opened new and very exciting opportunities for
greater understanding of materials and design issues arising in
3D interconnect technology today.

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# 2010 The Japan Society of Applied Physics

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