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axis system is chosen such that the silicon surface is in the XZ plane and the X-section in the X-Y plane. This choice is
made to simplify the calculations of the Raman selection rules
and shifts for measurements on the cross-section XY-plane.
Triaxial:
(cm-1) = -1.93x10-9 (xx + zz) - 0.75 10-9yy (Pa)
(1)
This equation is given for an axis system x=[100], y=[010],
z=[001]. In the general case when all the strain tensor
elements are non-zero, this equation cannot be solved and
modeling is required to obtain information on the stress
components. If there is uniaxial or biaxial stress, the solution
is straightforward and the relation between Raman peak
frequency and stress becomes simply linear. For the Cartesian
system of Fig. 1, this is:
Uniaxial:
Biaxial:
(4)
T
S
V
T
S
V
332
for the shorter one (~ 0.15 cm-1). One can assume that this
effect is entirely due to changes of the axial stress component,
zz, because the diameter of the TSV did not change.
T
S
V
Fig. 3 Plot of the stress profile in Si, starting from the edge of
a 5 mm wide Cu-TSV at room temperature. (a) At the center
region, i.e. deep in the silicon far from the TSV top and
bottom; (b) at the top of the Si. From [13].
Near the surface, the axial stress is highly compressive
close to the TSV, but falls fast back to zero and the picture is
dominated by the tensile shear and radial stress, and the
compressive circumferential stress (Fig. 3). From the Raman
results, it seems that the tensile components dominate. It is
more difficult to make conclusions, because we do not know
the effect of the shear stress on the Raman shift, and in
addition the stress near the top surface of the sample is also
influenced by STI layers.
Fig. 4 shows the effect of TSV length on the Raman shift
for 22 and 40 m deep TSVs, diameter 5 m. The
measurements were done using the 633 nm laser line, so
results are from a relative large depth where we can assume
that the shear stress can be neglected. In this experiment the
Cu chemistry inside the TSVs differs from the one in Fig. 2.
No tensile stress component is detected. Again, this does not
mean that it is not present, yy dominates the result and xx
and zz might be large but only their difference affects .
And, as is shown in the simulations, this difference is expected
to be small. Clearly visible is that the positive shift of
close to the TSV is larger for the longer TSV (~ 0.4 cm-1) than
40 m
22 m
xx
=r
xx
=a
zz
=c
2 m below Si surface
77 MPa
Tensile
-96 MPa
Compressive
16
-230 MPa
Compressive
333
10 m
5 m
0.20
0.15
x (m)
10
20
30
-1
40
0.10
0.05
0.00
-0.05
-0.10
50
0
10
15
20
25
0.20
10
0.15
20
30
-1
x (m)
y (m)
(cm )
with cap
T
S
V
(cm )
40
0.10
0.05
0.00
-0.05
50
-0.10
0
10
15
20
25
y (m)
without cap
Triaxial:
(cm-1) = -2.31x10-9 xx 1.93 10-9 yy 0.37 10-9zz (Pa)
334
FET 4
FET 3
FET 2
FET 1
TSV
Top view
FET 4
FET 3
X-section view
FET 2
FET 1
TSV
FET 2
FET 1
TSV
T
S
V
335
TSV
FET 1
FET 2
FET 3
FET 4
Id
been done. Part of this work was done in the frame of the EC
project eBrains.
References
1. De Wolf, I., Micro-Raman spectroscopy to study local
mechanical stress in silicon integrated circuits,
Semicond. Sci. Technol., Vol. 11 (1996), pp. 139-154.
2. Murugesam, M. et al., Wafer thinning, bonding and
interconnects induced local strain/stress in 3D-LSIs with
fine-pitch high-density microbumps and through-Si vias,
Proc IEEE electron Devices Meeting (IEDM), 2010, pp.
10-30 10-33.
3. Kwon, W.S. et al., Stress evolution in surrounding
silicon of Cu-filled through-silicon via undergoing
thermal annealing by multiwavelength micro-Raman
spectroscopy, Applied Physics Letters, Vol. 98 (2011),
pp. 232106-1 - 232106-3.
4. Le Texier, F. et al., Investigation of local stress around
TSVs by micro-Raman spectroscopy and finite element
simulation, Proc Interconnect Technology Conference
and 2011 Materials for Advanced Metallization
(IITC/MAM), 2011.
5. McDonough, C. et al., Thermal and spatial dependence
of TSV-induced stress in Si, Proc. Interconnect
Technology Conference and 2011 Materials for
Advanced Metallization (IITC/MAM), 2011.
6. Dao, T. et al., Through silicon via stress
characterization, Proc IEEE IC Design and technology
(ICICDT), 2009, pp. 39-41.
7. Tanaka, T. et al., Development of self-assembled 3-D
integration technology and study of microbump and TSV
induced stress in thinned chip/wafer, Proc IEEE Intern.
SOI Conference, 2010, pp.1-4.
8. De Wolf, I et al., Stress measurements in silicon devices
through Raman spectroscopy: Bridging the gap between
theory and experiment, J. Appl. Phys. Vol. 79, No. 9
(1996), pp. 7148-7156.
9. De Wolf, I. et al., Addendum: Stress measurements
Stress measurements in silicon devices through Raman
spectroscopy: Bridging the gap between theory and
experiment [J. Appl. Phys. 79, 7148 (1996)], J. Appl.
Phys. Vol. 85, No. 10 (1999), pp. 7484-7485.
10. Okoro, C. et al., Extraction of the appropriate material
property for realistic modeling of through-silicon-vias
using -Raman spectroscopy,
Proc Interconnect
Technology Conference (IITC), 2008, pp. 16-18.
11. Hsieh, C.C. et al., Orthotropic stress field induced by
TSV and its impact on device performance, Proc
Interconnect Technology Conference and 2011 Materials
for Advanced Metallization (IITC/MAM), 2011.
12. De Wolf, I., Raman spectroscopy analysis of mechanical
stress near Cu-TSVs. In: Stress management for 3D ICs
through silicon vias, Proc International workshop on
stress management for 3D ICs using through silicon vias.
AIP conference proceedings, Vol. 1378, 2011, pp138149.
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