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AMPLIFIERS
Linear Signal
Amplification:
v0 (t ) Avi (t )
Distortion changes
waveform as in figure
NONLINEARITY
Most
amplifiers are
only linear in a narrow
range of operation
For
Phase Response
Fig. (a) Magnitude and (b) phase response of STC networks of the lowpass type.
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Magnitude Response
Phase response
Fig. (a) Magnitude and (b) phase response of STC networks of the
high-pass type.
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OP-AMP
Dual
in Line Packaging(DIP)
OP-AMP PACKAGING
Pinouts
OP-AMP CIRCUITRY
The
OP-AMPS
Common
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FIND CURRENTS
Invert
amplifier
Use
Kirchoffs
Current Law
Use
Superposition
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R2
R2
R2 R1
vO 1 v v1 1 v v1
R1
R1 R2
R1
i 0 v
R4
R4
v2 v
v2
R3 R4
R3 R4
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R2
v1
Ri
v
R1
RO
vO
A( v v )
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INPUT RESISTANCE
Rin
v1
i1
GAIN
vO
vi
vO
MESH 1
MESH 2
vO R2 i2 R1 (i1 i2 )
R1
( R1 R2 )
i1 v1
AR R ( R R R ) i 0
i
1
1
2
O 2
i1
R1 R2 RO
v1
i2
( ARi R1 )
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Fig. (a) Unity-gain follower. (b) Input step waveform. (c) Linearly rising output
waveform obtained when the amplifier is slew-rate limited. (d) Exponentially
rising output waveform obtained when V is sufficiently small so that the initial
slope (wtV) is smaller then or equal to SR.
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Effect of slew-rate
limits output for
sinusoidal waveforms.
dv0
SR
dt
max
BASIC SEMICONDUCTORS
Diode
Structure
Symbol
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DIODES
Fig. The ideal diode: (a) diode circuit symbol; (b) i-v characteristic; (c)
equivalent circuit in the reverse direction; (d) equivalent circuit in the
forward direction.
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DIODE CIRCUITS
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DIODE CHARACTERIZATION
i I s ev / nVT 1
i I s ev / nVT 1
Breakdown
i I s
Fig. The i-v characteristic of a
silicon junction diode.
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DIODE REGIONS
Diodes
have negligible
current when biased in
reverse direction
Diodes
PHYSICAL STRUCTURE ON PN
JUNCTION
We
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We
can simplify
Diode physics by
modeling it as a 2D
PN junction
PN
junction:P and N
regions by different
dopings: n p ni
Diffusion
& Drift
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REVERSE-BIAS PN JUNCTION
The pn junction excited by a constant-current source I in the
reverse direction. To avoid breakdown, I is kept smaller than
Is. Note that the depletion layer widens and the barrier
voltage increases by Vr volts, which appears between the
terminals as a reverse voltage.
Reverse
Bias:
IS ID I
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MODELING
Approximate
the
diode forward
characteristic with
two straight lines.
Fig. 3.20
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Diode
Is nonlinear
of
the constantvoltage-drop
model of the
diode forward
characteristics.
vertical straight
line B is used to
approximate the
fast-rising
exponential
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Fig. Equivalent circuit model for the diode for small changes around
bias point Q. The incremental resistance rd is the inverse of the slope
of the tangent at Q, and VD0 is the intercept of the tangent on the VD
axis.
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Fig. The analysis of the circuit in (a), which contains both dc and signal
quantities, can be performed by replacing the diode with the model shown in
(b). This allows separating the dc analysis [the circuit in (c)] from the signal
analysis [the circuit in (d)].
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Fig. (a) Half-wave rectifier. (b) Equivalent circuit of the half-wave rectifier with the
diode replaced with its battery-plus-resistance model. (c) transfer characteristic of the
rectifier circuit. (d) Input and output waveforms, assuming that rD || R.
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Fig. The bridge rectifier: (a) circuit and (b) input and output
waveforms.
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Fig. Voltage and current waveforms in the peak rectifier circuit with
CR at T. The diode is assumed ideal.
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BJT - DC Biasing
Transistor magical device that can rise the
level of the applied input
without the assistance of an
external energy source
FACT:
Output ac power level is the result of a transfer of
energy from the applied dc supplies
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BJT - DC Biasing
Once the desired DC current and voltage levels have
been defined, a network must be constructed that will
establish the desired operating point.
These basic relationships are needed for analysis
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