TIPL762, TIPL762A

NPN SILICON POWER TRANSISTORS

Rugged Triple-Diffused Planar Construction

6 A Continuous Collector Current

Operating Characteristics Fully Guaranteed

at 100C

1000 Volt Blocking Capability

120 W at 25C Case Temperature

SOT-93 PACKAGE
(TOP VIEW)

Pin 2 is in electrical contact with the mounting base.

MDTRAAA

absolute maximum ratings at 25C case temperature (unless otherwise noted)

RATING
Collector-base voltage (IE = 0)
Collector-emitter voltage (VBE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage

SYMBOL
TIPL762
TIPL762A
TIPL762
TIPL762A
TIPL762
TIPL762A

V CBO
VCES
VCEO

VALUE
850
1000
850
1000
400
450

UNIT
V
V
V

VEBO

10

IC

Peak collector current (see Note 1)

ICM

12

Continuous device dissipation at (or below) 25C case temperature

Ptot

120

Tj

-65 to +150

Tstg

-65 to +150

Continuous collector current

Operating junction temperature range

Storage temperature range
NOTE

1: This value applies for tp 10 ms, duty cycle 2%.







AUGUST 1978 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

TIPL762, TIPL762A
NPN SILICON POWER TRANSISTORS
electrical characteristics at 25C case temperature (unless otherwise noted)
PARAMETER
VCEO(sus)

ICES

ICEO
IEBO
hFE

VCE(sat)

VBE(sat)

ft
Cob

Collector-emitter
sustaining voltage

TEST CONDITIONS
IC =

100 mA

L = 25 mH

MIN

(see Note 2)

TIPL762

400

TIPL762A

450

TYP

MAX

V
50

VCE = 850 V

VBE = 0

TIPL762

Collector-emitter

VCE = 1000 V

VBE = 0

TIPL762A

cut-off current

VCE = 850 V

VBE = 0

TC = 100C

TIPL762

200

VCE = 1000 V

VBE = 0

TC = 100C

TIPL762A

200

Collector cut-off

VCE = 400 V

IB = 0

TIPL762

50

current

VCE = 450 V

IB = 0

TIPL762A

50

VEB =

10 V

IC = 0

VCE =

5V

Emitter cut-off
current
Forward current
transfer ratio

(see Notes 3 and 4)

IB =

0.4 A

IC =

2A

Collector-emitter

IB =

0.8 A

IC =

4A

saturation voltage

IB =

1.2 A

IC =

6A

IB =

1.2 A

IC =

6A

IB =

0.4 A

IC =

2A

Base-emitter

IB =

0.8 A

IC =

4A

saturation voltage

IB =

1.2 A

IC =

6A

IB =

1.2 A

IC =

6A

VCE =

10 V

IC = 0.5 A

f=

VCB =

20 V

IE = 0

f = 0.1 MHz

Current gain
bandwidth product
Output capacitance

50

IC = 0.5 A

UNIT

20

A
mA

60
0.5

(see Notes 3 and 4)

1.0
2.5

TC = 100C

5.0
1.1

(see Notes 3 and 4)

1.3
1.5

TC = 100C

1.4

1 MHz

MHz

105

pF

NOTES: 2. Inductive loop switching measurement.

3. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

thermal characteristics
PARAMETER
RJC

MIN

TYP

Junction to case thermal resistance

MAX

UNIT

1.25

C/W

inductive-load-switching characteristics at 25C case temperature (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MAX

UNIT

tsv

Voltage storage time

2.5

trv

Voltage rise time

200

ns

tfi

Current fall time

tti

Current tail time

txo

Cross over time

tsv

Voltage storage time

trv

Voltage rise time

tfi

Current fall time

tti

Current tail time

txo

Cross over time

IC = 6 A
VBE(off) = -10 V

IB(on) = 1.2 A

IC = 6 A

IB(on) = 1.2 A

VBE(off) = -10 V

TC = 100C

MIN

(see Figures 1 and 2)

(see Figures 1 and 2)

150

ns

50

ns

300

ns

300

ns

150

ns

50

ns

500

ns

Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.


2

TYP





AUGUST 1978 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

TIPL762, TIPL762A
NPN SILICON POWER TRANSISTORS

PARAMETER MEASUREMENT INFORMATION

33

+5V

D45H11
BY205-400

33

BY205-400

RB

(on)

1 pF
180 H
V Gen

1 k

68

0.02 F

vcc

2N2222
BY205-400
Vclamp = 400 V

TUT

1 k
+5V

270

BY205-400

5X BY205-400

1 k
2N2904

Adjust pw to obtain IC

D44H11

47
For IC < 6 A

VCC = 50 V

For IC 6 A

VCC = 100 V

V
100

BE(off)

Figure 1. Inductive-Load Switching Test Circuit

I B(on)

A (90%)

IB

A - B = tsv

Base Current

B - C = trv
D - E = tfi
E - F = tti

B - E = txo

V
CE

90%

10%

Collector Voltage

D (90%)

E (10%)
I

C(on)

Collector Current
F (2%)

NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: t r < 15 ns, Rin > 10 , C in < 11.5 pF.
B. Resistors must be noninductive types.

Figure 2. Inductive-Load Switching Waveforms







AUGUST 1978 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

TIPL762, TIPL762A
NPN SILICON POWER TRANSISTORS

TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V

TCP762AE

100

TC = 125C
TC = 25C
TC = -65C

VCE = 5 V

hFE - Typical DC Current Gain

COLLECTOR-EMITTER SATURATION VOLTAGE

vs
BASE CURRENT

10

10
01

TCP762AH

50

IC = 1 A
IC = 2 A
IC = 4 A
IC = 6 A
TC = 25C

40

30

20

10

0
10

10

05

IC - Collector Current - A

10

25

Figure 4.

COLLECTOR-EMITTER SATURATION VOLTAGE

vs
BASE CURRENT

BASE-EMITTER SATURATION VOLTAGE

vs
BASE CURRENT

TCP762AI

50

IC = 1 A
IC = 2 A
IC = 4 A
IC = 6 A
TC = 100C

40

30

20

10

TCP762AJ

12
VBE(sat) - Base-Emitter Saturation Voltage - V

VCE(sat) - Collector-Emitter Saturation Voltage - V

20

IB - Base Current - A

Figure 3.

TC = 25C

11

10

09

IC =
IC =
IC =
IC =

08

6
4
2
1

A
A
A
A

07
0

05

10

15

IB - Base Current - A

Figure 5.

20

25

02

04 06

08

10

12

14 16

18

20

IB - Base Current - A

Figure 6.


4

15





AUGUST 1978 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

TIPL762, TIPL762A
NPN SILICON POWER TRANSISTORS

TYPICAL CHARACTERISTICS
COLLECTOR CUT-OFF CURRENT
vs
CASE TEMPERATURE
TCP762AF

ICES - Collector Cut-off Current - A

10

10
TIPL762A
VCE = 1000 V
01
TIPL762
VCE = 850 V
001

0001
-80 -60 -40 -20

20

40

60

80 100 120 140

TC - Case Temperature - C

Figure 7.

MAXIMUM SAFE OPERATING REGIONS

MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA

IC - Collector Current - A

100

SAP762AB

10

10

0.1

tp = 100 s
tp =
1 ms
tp = 10 ms
DC Operation

001
10

TIPL762
TIPL762A
10

100

1000

VCE - Collector-Emitter Voltage - V

Figure 8.







AUGUST 1978 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

TIPL762, TIPL762A
NPN SILICON POWER TRANSISTORS

ZJC / RJC - Normalised Transient Thermal Impedance

THERMAL INFORMATION
THERMAL RESPONSE JUNCTION TO CASE
vs
POWER PULSE DURATION
TCP762AG

10
50%
20%
01

10%
5%
2%

001 1%
t1

0%

0001
10-5

duty cycle = t1/t2

Read time at end of t1,
TJ(max) - TC = PD(peak)
10-4

10-3

t2

( )
ZJC
RJC

10-2

R JC(max)
10-1

t1 - Power Pulse Duration - s

Figure 9.


6





AUGUST 1978 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

Mouser Electronics
Authorized Distributor

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