Data Sheet: UHF Push-Pull Power MOS Transistor

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D091
BLF548
UHF push-pull power MOS
transistor
Product specification
Supersedes data of Oct 1992
2003 Sep 26
Philips Semiconductors
UHF push-pull power MOS transistor
FEATURES
BLF548
PIN CONFIGURATION
High power gain

Easy power control
Good thermal stability
Gold metallization ensures
excellent reliability
2
d2
halfpage
g2
Designed for broadband operation.

5
DESCRIPTION
The transistor is encapsulated in a

4-lead, SOT262A2 balanced flange
package, with two ceramic caps. The
mounting flange provides the
common source connection for the
transistors.
Top view
MSB008
DESCRIPTION
drain 1
drain 2
gate 1
gate 2
source
MBB157
Fig.1 Simplified outline and symbol.
CAUTION
This product is supplied in anti-static packing to prevent damage caused by
electrostatic discharge during transport and handling. For further information,
refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
WARNING
PINNING - SOT262A2
PIN
d1
5
3
Dual push-pull silicon N-channel

enhancement mode vertical D-MOS
transistor designed for
communications transmitter
applications in the UHF frequency
range.
g1
Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided
that the BeO discs are not damaged. All persons who handle, use or dispose
of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
QUICK REFERENCE DATA

RF performance at Th = 25 C in a push-pull common source test circuit.
MODE OF OPERATION
CW, class-B
2003 Sep 26
f
(MHz)
VDS
(V)
PL
(W)
Gp
(dB)
D
(%)
500
28
150
>10
>50
BLF548
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor section unless otherwise specified

VDS
drain-source voltage
65
VGS
gate-source voltage
20
ID
drain current (DC)
15
Ptot
total power dissipation
330
Tstg
storage temperature
65
+150
Tj
junction temperature
200
Tmb 25 C; total device; both sections

equally loaded
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-mb
thermal resistance from junction to

mounting base
Tmb = 25 C; Ptot = 330 W; total device;

both sections equally loaded
0.5
K/W
Rth mb-h
thermal resistance from mounting

base to heatsink
total device; both sections equally

loaded
0.15
K/W
MRA532
MRA997
102
handbook, halfpage
400
handbook,
halfpage
P
tot
(W)
ID
(A)
350
(2)
300
250
(2)
(1)
10
(1)
200
150
100
50
10
VDS (V)
102
20
40
60
80
(1) Current in this area may be limited by RDSon.
(1) Continuous operation.
(2) Tmb = 25 C.
Total device; both sections equally loaded.
(2) Short-time operation during mismatch.

Total device; both sections equally loaded.
Fig.2 DC SOAR.
2003 Sep 26
100
120
Th (oC)
Fig.3 Power derating curves.
BLF548
CHARACTERISTICS
Tj = 25 C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per transistor section

V(BR)DSS
drain-source breakdown voltage VGS = 0; ID = 40 mA
65
IDSS
drain-source leakage current
VGS = 0; VDS = 28 V
0.5
mA
IGSS
gate-source leakage current
VGS = 20 V; VDS = 0
VGSth
gate-source threshold voltage
ID = 160 mA; VDS = 10 V
gfs
forward transconductance
ID = 4.8 A; VDS = 10 V
2.4
3.5
RDSon
drain-source on-state resistance ID = 4.8 A; VGS = 10 V
0.25
0.3
IDSX
on-state drain current
VGS = 15 V; VDS = 10 V
16
20
Cis
input capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
105
pF
Cos
output capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
90
pF
Crs
feedback capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
25
pF
VGS group indicator

LIMITS
(V)
GROUP
LIMITS
(V)
GROUP
MIN.
MAX.
MIN.
MAX.
2.0
2.1
2.1
2.2
3.3
3.4
3.4
3.5
2.2
2.3
3.5
3.6
D
E
2.3
2.4
3.6
3.7
2.4
2.5
3.7
3.8
2.5
2.6
3.8
3.9
2.6
2.7
3.9
4.0
2.7
2.8
4.0
4.1
2.8
2.9
4.1
4.2
2.9
3.0
4.2
4.3
3.0
3.1
4.3
4.4
3.1
3.2
4.4
4.5
3.2
3.3
2003 Sep 26
BLF548
MRA524
3
handbook, halfpage
MRA529
25
handbook, halfpage
TC
(mV/K)
ID
(A)
20
1
15
0
1
10
2
5
3
4
102
101
ID (A)
10
VDS = 10 V.
Fig.4
12
VGS (V)
16
VDS = 10 V; Tj = 25 C.
Temperature coefficient of gate-source

voltage as a function of drain current; typical
values per section.
Fig.5
MRA522
0.5
Drain current as a function of gate-source

voltage; typical values per section.
MRA525
400
handbook, halfpage
handbook, halfpage
RDSon
()
C
(pF)
0.4
300
0.3
200
Cos
0.2
Cis
100
0.1
0
0
40
80
Tj (oC)
120
10
20
VDS (V)
30
ID = 4.8 A; VGS = 10 V.
Fig.6
Drain-source on-state resistance as a

function of junction temperature; typical
values per section.
2003 Sep 26
Fig.7
Input and output capacitance as functions

of drain-source voltage; typical values per
section.
BLF548
MRA521
100
Crs
(pF)
handbook, halfpage
80
60
40
20
Fig.8
10
20
VDS (V)
30
Feedback capacitance as a function of

drain-source voltage; typical values per
section.
APPLICATION INFORMATION FOR CLASS-B OPERATION

Th = 25 C; Rth mb-h = 0.15 K/W, unless otherwise specified.
RF performance in a common source, class-B, push-pull test circuit.
MODE OF OPERATION
CW, class-B
f
(MHz)
VDS
(V)
IDQ
(mA)
PL
(W)
Gp
(dB)
D
(%)
500
28
2 x 160
150
>10
typ. 11
>50
typ. 55
Ruggedness in class-B operation

The BLF548 is capable of withstanding a load mismatch corresponding to VSWR = 10: 1 through all phases under the
following conditions: VDS = 28 V; f = 500 MHz at rated output power.
2003 Sep 26
MRA527
20
Gp
(dB)
handbook, halfpage
BLF548
handbook, halfpage
D
(%)
80
16
Gp
12
PL
(W)
160
120
60
80
40
40
20
0
0
0
50
100
0
200
150
MRA531
200
100
10
20
PIN (W)
30
PL (W)
Class-B operation; VDS = 28 V; IDQ = 2 160 mA;

f = 500 MHz; ZL = 1.1 + j0.6 (per section).
Class-B operation; VDS = 28 V; IDQ = 2 160 mA;

f = 500 MHz; ZL = 1.1 + j0.6 (per section).
Fig.9
Fig.10 Load power as a function of input power;

typical values.
Power gain and efficiency as functions of

load power; typical values.
2003 Sep 26
BLF548
+VD
C12
C13
R1
R2
Vbias

,,,

,,,

L10
C7
R7
C8
C14
L12
R3
L1
50
input
L4
C1
L6
L8
DUT
L2
C3
C4
C5
L18
C19
C21
L20
C23
L22
L23
50
output
C22
C18
L5
L13
C9
C6
L3
C2
L11
C20
L9
L7
L24
L14
L19
R4
C24
L15
C15
C10
L21
MBC232
C11
R8
L16
Vbias
R5
L17
R6
C17
C16
+VD
pagewidth
f = 500 MHz.
Fig.11 Test circuit for class-B operation.
List of components class-B test circuit (see Fig.11)

COMPONENT
DESCRIPTION
VALUE
C1, C2
multilayer ceramic chip capacitor;

note 1
22 pF
C3

note 1
16 pF
C4
film dielectric trimmer
2 to 9 pF
C5

note 2
27 pF
C6, C21, C22
film dielectric trimmer
2 to 18 pF
C7, C10, C14, C15 multilayer ceramic chip capacitor;

note 1
390 pF
C8, C11, C12, C17 multilayer ceramic chip capacitor
100 nF
C9
2 56 pF
in series
2003 Sep 26

note 3
DIMENSIONS
CATALOGUE NO.
2222 809 09005
2222 809 09006
2222 852 47104
COMPONENT
BLF548
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE NO.
C13, C16
electrolytic capacitor
10 F, 63 V
C18

note 2
18 pF
C19

note 2
12 pF
C20

note 2
8.2 pF
C23, C24

note 1
30 pF
L1, L3, L22, L24
stripline; note 4
34.5
length 66.5 mm
width 4 mm
L2, L23
semi-rigid cable; note 5
50
length 66.5 mm
width 3.6 mm
L4, L5
stripline; note 4
22.3
length 35 mm
width 7 mm
L6, L7
stripline; note 4
22.3
length 10 mm
width 7 mm
L8, L9
stripline; note 4
22.3
length 5.5 mm
width 7 mm
L10, L11, L16, L17
grade 3B Ferroxcube wideband RF

choke
L12, L15
1 turn enamelled 1.5 mm copper

wire
17 nH
length 5 mm
int. dia. 9 mm
leads 2 5 mm
L13, L14
stripline; note 4
22.3
length 15 mm
width 7 mm
L18, L19
stripline; note 4
22.3
length 36 mm
width 7 mm
L20, L21
stripline; note 4
22.3
length 8.5 mm
width 7 mm
R1, R5
0.4 W metal film resistor
24.7 k
R2, R6
10 turn potentiometer
5 k
R3, R4
0.4 W metal film resistor
10.5 k
2322 151 71053
R7, R8
1 W metal film resistor
10
2322 151 51009
2222 030 38109
4312 020 36642
2322 151 72473
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. American Technical Ceramics (ATC) capacitor, type 175B or other capacitor of the same quality.
3. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality.
4. The striplines are on a double copper-clad printed-circuit board, with PTFE fibre-glass dielectric (r = 2.2),
thickness 0.79 mm.
5. Cables L2 and L23 are soldered to striplines L1 and L22 respectively.
2003 Sep 26
BLF548
V DS
R2
handbook, full pagewidth
L10
R7
L1/L2
C8
C7
C14
R3
C1
L4
C3
C4
C2
L5
C13
L11
L22/L23
C12
L12
L6
C5
C6
C9
L7
L13
C18
C19
L9 L14
L8
C20
C21
C23
L20
L18
C22
L19
L21 C24
L15
R4
C10
C15
L3
C11
L16
R8
C17
L24
C16
L17
V DS
R6
MBC231 - 1
200 mm
handbook, full pagewidth
strap
strap
strap
rivets
strap
rivets
70
mm
strap
strap
strap
strap
MBC230
The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully
metallized to serve as a ground plane. Connections are made by means of copper straps and hollow rivets for a
direct contact between upper and lower sheets.
Fig.12 Component layout for 500 MHz class-B test circuit.
2003 Sep 26
10
BLF548
MRA528
MRA530
6
ZL
()
5
handbook, halfpage
handbook, halfpage
Zi
()
ri
xi
RL
3
2
2
XL
3
1
4
50
150
250
350
0
50
450
550
f (MHz)
150
250
350
450
550
f (MHz)
Class-B operation; VDS = 28 V; IDQ = 160 mA (per section);

PL = 150 W (total device).

Fig.13 Input impedance as a function of frequency

(series components); typical values per
section.
Fig.14 Load impedance as a function of frequency

(series components); typical values per
section.
MRA526
30
p
(dB)
25
handbook,
G halfpage
20
15
handbook, halfpage
10
Zi
ZL
MBA379
0
50
150
250
350
450
550
f (MHz)

Fig.16 Power gain as a function of frequency;

typical values per section.
Fig.15 Definition of MOS impedance.
2003 Sep 26
11
BLF548
BLF548 scattering parameters

VDS = 28 V; ID = 40 mA; note 1
s11
f (MHz)
s21
s12
s22
|s11|
|s21|
|s12|
|s22|
0.99
14.0
13.60
171.0
0.02
81.0
0.89
12.8
10
0.98
27.6
13.20
162.0
0.04
72.4
0.87
25.3
20
0.93
52.0
11.90
146.0
0.07
57.1
0.82
48.0
30
0.88
72.0
10.30
134.0
0.09
44.8
0.77
66.6
40
0.84
87.7
8.93
124.0
0.10
35.2
0.72
81.3
50
0.81
100.0
7.75
116.0
0.11
27.7
0.68
93.0
60
0.79
110.0
6.78
110.0
0.12
21.6
0.66
102.0
70
0.77
118.0
6.00
104.0
0.12
16.7
0.64
109.0
80
0.76
124.0
5.36
99.8
0.12
12.5
0.63
115.0
90
0.75
129.0
4.82
95.9
0.12
8.9
0.62
120.0
100
0.75
133.0
4.37
92.3
0.13
5.7
0.61
124.0
125
0.74
141.0
3.53
84.7
0.13
1.1
0.61
131.0
150
0.74
147.0
2.94
78.3
0.13
6.6
0.61
137.0
175
0.74
151.0
2.50
72.6
0.12
11.5
0.62
140.0
200
0.75
154.0
2.16
67.5
0.12
15.8
0.64
143.0
250
0.77
159.0
1.67
58.4
0.12
23.3
0.67
148.0
300
0.78
163.0
1.33
50.4
0.11
29.7
0.70
151.0
350
0.80
167.0
1.09
43.1
0.10
35.3
0.73
154.0
400
0.82
169.0
0.91
36.6
0.10
40.3
0.75
157.0
450
0.84
172.0
0.77
30.6
0.09
44.7
0.78
160.0
500
0.85
175.0
0.66
25.1
0.08
48.6
0.80
162.0
600
0.89
179.0
0.50
15.6
0.07
55.2
0.84
167.0
700
0.90
177.0
0.39
7.5
0.06
60.4
0.88
170.0
800
0.92
173.0
0.32
0.6
0.05
64.3
0.90
174.0
900
0.93
169.0
0.26
5.4
0.04
67.3
0.92
177.0
1000
0.94
166.0
0.22
10.8
0.04
69.2
0.93
179.0
Note
1. For more extensive s-parameters see internet:
http://www.semiconductors.philips.com/markets/communications/wirelesscommunications/broadcast
2003 Sep 26
12
BLF548
PACKAGE OUTLINE
Flanged double-ended ceramic package; 2 mounting holes; 4 leads
SOT262A2
A
F
D1
U1
C
w2 M C M
H1
U2
E1
5
A
w1 M A M B M
4
w3 M
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
mm
5.39
4.62
5.85
5.58
0.16
0.10
inches
D1
E1
22.17 21.98
10.27 10.29
11.05
21.46 21.71
10.05 10.03
1.78
1.52
H1
21.08 17.02
19.56 16.51
U1
U2
w1
w2
w3
3.28
3.02
2.47
2.20
27.94
34.17
33.90
9.91
9.65
0.25
0.51
0.25
0.212 0.230 0.006 0.873 0.865

0.404 0.405 0.070 0.830 0.670 0.129 0.097
1.345 0.390
1.100
0.010 0.020 0.010
0.435
0.182 0.220 0.004 0.845 0.855
0.396 0.396 0.060 0.770 0.650 0.119 0.087
1.335 0.380
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
99-03-29
SOT262A2
2003 Sep 26
EUROPEAN
PROJECTION
13
BLF548
DATA SHEET STATUS

LEVEL
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
Development
DEFINITION
Objective data
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Production
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications These products are not

designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in

accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes Philips Semiconductors

reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design
and/or performance. When the product is in full production
(status Production), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
Application information Applications that are

described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2003 Sep 26
14
Philips Semiconductors a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
SCA75
Koninklijke Philips Electronics N.V. 2003
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613524/04/pp15
Date of release: 2003
Sep 26
Document order number:
9397 750 11592

Data Sheet: UHF Push-Pull Power MOS Transistor

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Data Sheet: UHF Push-Pull Power MOS Transistor

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DISCRETE SEMICONDUCTORS

UHF push-pull power MOS transistor

High power gain

Designed for broadband operation.

The transistor is encapsulated in a

Fig.1 Simplified outline and symbol.

Dual push-pull silicon N-channel

Product and environmental safety - toxic materials

QUICK REFERENCE DATA

UHF push-pull power MOS transistor

Per transistor section unless otherwise specified

drain current (DC)

total power dissipation

Tmb 25 C; total device; both sections

thermal resistance from junction to

Tmb = 25 C; Ptot = 330 W; total device;

thermal resistance from mounting

total device; both sections equally

(1) Current in this area may be limited by RDSon.

(1) Continuous operation.

(2) Short-time operation during mismatch.

Fig.3 Power derating curves.

UHF push-pull power MOS transistor

Per transistor section

drain-source breakdown voltage VGS = 0; ID = 40 mA

drain-source leakage current

gate-source leakage current

gate-source threshold voltage

ID = 160 mA; VDS = 10 V

drain-source on-state resistance ID = 4.8 A; VGS = 10 V

on-state drain current

VGS = 0; VDS = 28 V; f = 1 MHz

VGS = 0; VDS = 28 V; f = 1 MHz

VGS = 0; VDS = 28 V; f = 1 MHz

VGS group indicator

UHF push-pull power MOS transistor

Temperature coefficient of gate-source

Drain current as a function of gate-source

Drain-source on-state resistance as a

Input and output capacitance as functions

UHF push-pull power MOS transistor

Feedback capacitance as a function of

APPLICATION INFORMATION FOR CLASS-B OPERATION

Ruggedness in class-B operation

UHF push-pull power MOS transistor

Class-B operation; VDS = 28 V; IDQ = 2 160 mA;

Class-B operation; VDS = 28 V; IDQ = 2 160 mA;

Fig.10 Load power as a function of input power;

Power gain and efficiency as functions of

UHF push-pull power MOS transistor

Fig.11 Test circuit for class-B operation.

List of components class-B test circuit (see Fig.11)

multilayer ceramic chip capacitor;

multilayer ceramic chip capacitor;

film dielectric trimmer

multilayer ceramic chip capacitor;

C6, C21, C22

film dielectric trimmer

C7, C10, C14, C15 multilayer ceramic chip capacitor;

C8, C11, C12, C17 multilayer ceramic chip capacitor

multilayer ceramic chip capacitor;

2222 809 09005

2222 809 09006