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OF SOLID-STATE
CIRCUITS,
VOL.
1987
1147
I.
INTRODUCTION
S ANALOG metal-oxide-semiconductor
(MOS) integrated circuits (ICS) find broader applications,
more analog functions are being integrated into very
large-scale integration (VLSI) systems, sharing the same
VLSI processing technology. In particular, MOS technologies are suitable for analog/digital mixed systems containing analog sampled-data circuits where high-quality
switches and capacitors are essential. In most commercial
radio-frequency (RF) receiver ICS, only active bipolar
components are integrated, requiring passive components
to be supplied externally [1][7]. Although the cost of
building RF receiver boards using currently available ICS
is cost effective, low-cost signal processing capabilities
covering RF to low frequencies will be in demand in the
future and the need to integrate more high-frequency
analog circuits along with digital VLSI systems will be
strong.
In this paper, a fully integrated narrow-band frequencymodulation (FM) receiver implemented using a double-poly
complementary MOS (CMOS) technology is discussed. A
low-cost high-selectivity FM RF receiver system will find
its applications as RF signal-processing front ends in VLSI
systems or as independent FM receivers in pagers, radio
controls, toy radios, and cordless telephones. All circuits
for RF amplification, modulation, intermediate-frequency
(IF) filtering, and FM demodulation are integrated on a
single chip, and the number of external components is
minimized. To complete a receiver, a tuned load, an automatic gain contr~l (AGC) timing capacitor, a reference
clock, and two ac coupling capacitors must be supplied
externally. All timing clocks are internally generated so
that only a single clock need be applied.
Standard super-heterodyne RF receivers have been built
using very selective high-frequency ceramic or crystal IF
filters. Recently, efforts have been made to implement
high-frequency filters employing IC techniques [8]-[10].
Such an FM receiver has been fabricated as a single chip
using a 3-MHz high-Q switched-capacitor filter as the first
IF filter of a double-heterodyne architecture [11]. However, typicalhigh- Q monolithic active filters based on a
direct passive-to-active transform cannot provide the high
chanoel selectivityy required in narrow-band RF systems.
For example, current cordless and mobile telephone systems allow only 2030-kHz channel bandwidth to accommodate more channels within a given commercial RIF
band. In typical monolithic active filters, center frequencies depend on component matching and quality factors
greater than 5060 are not practical [10]. One technique to
implement high-Q high-frequency IF filters in monolithic
form is to use a modulation technique such as an N-path
or pseudo N-path filtering [12][14]. The RF receiver to be
described here uses a single-sideband modulation technique to achieve a narrow-band IF filtering and a frequency
translation at the same time [15], [16]. Baseband IF filtering is accomplished in the modulation filter as well as
frequency translation, which comes as an added bonus.
This type of modulation filter can easily meet the high-Q
and high-frequency requirements and is also compatible
with current IC technology. Since there is no power-consuming high-frequency IF filter involved, an extremely
high selectivityy is achieved with much less power dissipa tion. This paper discusses the practical aspects and limits
of such IC implementations.
In Section H, narrow-band IF filtering and frequency
translation schemes are explained. In Section III, desig]n
considerations of an MOS implementation are discussed,
and switched-capacitor IF filters as well as an FM demodulation scheme are also illustrated. Finally, in Section IV,
experimental results of a prototype FM receiver are presented.
0018-9200/87/1200-1147$01.00
01987 IEEE
1148
IEEE JOURNAL
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CIRCUITS,
VOL.
1987
OF SOLID-STATE
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MODULATIONFILTERING
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RECEIVERIMPLEMENTATION
SONG:
11!49
I F1
1
1
r)
A. RF Front-End Design
IF2
I
Fig, 3.
Frequency
translation
B. IF Filtering Scheme
In the baseband, the signal is filtered by two low-pass
filters (LPF2) with a 8.75-kHz cutoff frequency. This malws
I
1150
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Fig. 6.
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GENERATOR
genera-
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Fig.
5.
A baseband
DETECT)
. VW
C. FM Demodulation
+
Fig.
7.
SHIFT).
SONG:
NARROW-BAND
11[51
CMOS FM RECEIVER
Fig. 8.
Diephoto
of theprototype
receiver.
10 dO/OIV.
A. Switched-Capacitor Filters
(a)
IF2
10 dB/OIV.
20 kHz/OIV.
10 dB/lllV.
1 kHz/OIV.
LPF1
(b)
LPF2
2 kHz/OIV.
(c)
Fig. 9. Frequency
responses of three switched-capacitor
filters (10
dB/div,
vertical): (a) IF2 (20 kHz/div,
horizontat);
(b) LPF1 (1
kHz/div,
horizontal); and (c) LPF2 (2 kHz/div, horizontal).
IV.
EXPERIMENTAL
RESULTS
1152
IEEE JOURNAL
OF SOLID-STATE
CIRCUITS,
VOL.
TABLE I
MEASURED
PERFORMANCES
OF SWTTCHED-CAPACITOR
Characteristics
Center/Cutoff Frequency
1F2
60kHz
Selectivity
Q
Passhand
Rirmle
PSRR+
PSRRDynamic
Range
(lock
Frequency
Passband
Gain
Power
Area
3
0.3dB
35dB
21dB
58dB
640kHz
1.5
10mW (5V)
0.5mm2
LPF1
FILTERS
LPF2
Moo IlN
3.75kHz
8.7kHz
0.2dB
36dB
0.4dB
48dB
25dB
63dB
160kHz
1
1.4mW (5V)
0.54mm2
27dB
61dB
160kHz
2
lmW (5V)
0.35mm2
DEMOO OUT*
(a)
OUTPUT
Iv
E
MOO lN
OEMOO OUT
-50 kHz
Fig.
10.
CENTER
FREIJUENCY
+50 kHz
Experimental
transfer characteristic
of the receiver
output voltage versus input frequency deviation).
(receiver
(b)
Fig. 11.
Receiver
responses:
(a) sinusoidal
modulation.
modulation,
8
i!AllAL
g
-to
-m
AmwnBll
g
-aA
4)
ii
Inmf
-m
Fig. 12.
1.A
16
AA
lAA
AH
Measured
1
18M
of the receiver
1153
A - ~y
1
I
190
Fig. 13.
Distortion
versus
TABLE II
MEASURED
PERFORMANCE
OFTHEFM RECEIVER
(klk)
4
I
8
10
versus
Channel
Bandwidth
Voice (hannel Handw,dth
Nlax] mum Frequency
t)eviatmn
Input SensltlvlLy
WIO RF .4mp
Signal-to-Noise
Ratm
Ikirmonic
Distortion
of lkl{x
Intermodulat,on
Distortion
AM Rejecuon
Capture
Ratio
Alternate
Channel
SelecLivily
Adjacent
Chwmel Selecl,vtly
Audio Output
Power
Oie Area
frequency
(10 dB/div.
)
mismatch and canceling offsets. Extraneous in-band components are observed to be harmonically unrelated to the
demodulated signal as shown in the spectrums. A 50-percent AM-modulated 50-MHz FM signal is used for the
AM rejection measurement, and two equal FM carriers
around 50 MHz with a 296-Hz frequency difference are
used for the intermodulation measurement. An AM modulation on FM signal was suppressed by more than 28 dlB,
and two carriers with the same 5-kHz deviation produce
1.6-percent third-order intermodulation components. The
measured performance of the receiver is summarized i.n
Table II.
V.
500Hz
2,5kHz
4,5kHz
(10 dB/div.)
2.5kHz
4.5ktiz
(b)
Fig.
14.
Measurement
CONCLUSIONS
(a)
500Hz
18kHz
3.75kHz
5kHz
5mV for 30-dB
Quieting
30dB
6% with 5-kHz Deviation
1.69.
2&ldB
4.3dB
76dfl
46dB
o.75v,,_,,
20mW with 5-V Supply
12mm2
An experimental CMOS FM receiver based on modulation IF filtering exhibits a 5-mV input sensitivity with a
30-dB quieting level and a sufficient adjacent channel
selectivity of 46 dB. If 40-dB amplification is done in the
RF stage, a 50-pV-level antenna input sensitivity is
achievable with this architecture. There is room for further
improvements in distortion and output jitter performances
of the proposed receiver by using linear phase filters and
by refining the FM demodulator. Further development of
sophisticated circuits to reduce path mismatch and offsets
will lead to low-power, highly selective, high-fidelity FM
receivers made on silicon substrate. Modulation filtering of
this kind is a truly viable means for implementing low-cost
RF receivers demanding utmost adjacent channel selectivity. The high selectivity will be particularly useful fc}r
receiver systems to be used in a crowded commercial RF
band.
ACKNOWLEDG~NT
1154
[3]
IEEE JOURNAL
circuit
radio,
IEEE
Trans.
Consumer
Electron.,
vol.
integrated
[16]
CE-23, pp.
[17]
IEEE
[5] W, Beckenbach,
[18]
[19]
[20]
OF SOLID-STATE
CIRCUITS,
VOL.
K. W. Moulding
Hi~h-freauencv
CMOS switched-caDacitor
filters for communicationsappli~atio~,
IEEE J. Solid-St&e Circuits, vol. SC-18, pp. 652664, Dec. 1983.
C.-F.
Chiou
and
R.
Schaumann,
Design
and performance
of a
[9]
fully integrated bipolar 1O.7-MHZ analog bandpass filter; IEEE J.
Solid-State Circuits, vol. SC-21, pp. 6-14, Feb. 1986.
high-Q bandpass
[10] B.-S. Song and P. R. Gray, Switched-capacitor
filters for IF applications, IEEE J. Solid-State Circuit$, vol. SC-21,
f)p, 924-933, b:C. 1986.
FM
[11] B.-S. Song and J. R. Barrier, A CMOS double-heterodyne
receiver, IEEE J. Solid-State Circuits, vol. SC-21, pp. 916-923,
Dec. 1986.
[12] L. E. Franks and I. W. Sandberg, An alternative approach to the
realization of network transfer functions, the N-path filter, Bell
Syst. Tech. Y., pp. 1321-1350, Sept. 1960.
[13] A. Fettweis and H. Wupper, A solution to the balancing problem
in N-path filters, IEEE Trans. Circuit Theory, vol. CT-18, pp.
403-405, May 1971.
[14] M. B. Ghaderi, G. C. Temes, and J. A. Nossek, Switched-capacitor vseudo N-Dath filter, in Proc. IEEE Int. Svmo,
. . Circuits Syst.,
AI); 1981, Pp: 519-522.
[15] D, K. Weaver, Jr:, A third method of generation and detection of
single-sideband
signals, Proc, IRE, vol. 44, pp. 17031705, Dec.
1956.