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 FQP8N60C/FQPF8N60C
QFET

FQP8N60C/FQPF8N60C
600V N-Channel MOSFET

General Description Features

These N-Channel enhancement mode power field effect 7.5A, 600V, RDS(on) = 1.2 @VGS = 10 V
transistors are produced using Fairchilds proprietary, Low gate charge ( typical 28 nC)
planar stripe, DMOS technology. Low Crss ( typical 12 pF)
This advanced technology has been especially tailored to Fast switching
minimize on-state resistance, provide superior switching 100% avalanche tested
performance, and withstand high energy pulse in the Improved dv/dt capability
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.

D
!

G!

TO-220 GD S
TO-220F
G DS FQPF Series
FQP Series !
S

Absolute Maximum Ratings TC = 25C unless otherwise noted

Symbol Parameter FQP8N60C FQPF8N60C Units

VDSS Drain-Source Voltage 600 V
ID Drain Current - Continuous (TC = 25C) 7.5 7.5 * A
- Continuous (TC = 100C) 4.6 4.6 * A
IDM Drain Current - Pulsed (Note 1) 30 30 * A
VGSS Gate-Source Voltage 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 230 mJ
IAR Avalanche Current (Note 1) 7.5 A
EAR Repetitive Avalanche Energy (Note 1) 14.7 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25C) 147 48 W
- Derate above 25C 1.18 0.38 W/C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 C
Maximum lead temperature for soldering purposes,
TL 300 C
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.

Thermal Characteristics
Symbol Parameter FQP8N60C FQPF8N60C Units
RJC Thermal Resistance, Junction-to-Case 0.85 2.6 C/W
RCS Thermal Resistance, Case-to-Sink Typ. 0.5 -- C/W
RJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 C/W

2004 Fairchild Semiconductor Corporation Rev. B, March 2004

 FQP8N60C/FQPF8N60C
Electrical Characteristics TC = 25C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A 600 -- -- V
BVDSS Breakdown Voltage Temperature
ID = 250 A, Referenced to 25C -- 0.7 -- V/C
/ TJ Coefficient
IDSS VDS = 600 V, VGS = 0 V -- -- 1 A
Zero Gate Voltage Drain Current
VDS = 480 V, TC = 125C -- -- 10 A
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A 2.0 -- 4.0 V
RDS(on) Static Drain-Source
VGS = 10 V, ID = 3.75 A -- 1.0 1.2
On-Resistance
gFS Forward Transconductance VDS = 40 V, ID = 3.75 A (Note 4) -- 8.7 -- S

Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V, -- 965 1255 pF
Coss Output Capacitance f = 1.0 MHz -- 105 135 pF
Crss Reverse Transfer Capacitance -- 12 16 pF

Switching Characteristics
td(on) Turn-On Delay Time -- 16.5 45 ns
VDD = 300 V, ID = 7.5A,
tr Turn-On Rise Time -- 60.5 130 ns
RG = 25
td(off) Turn-Off Delay Time -- 81 170 ns
(Note 4, 5)
tf Turn-Off Fall Time -- 64.5 140 ns
Qg Total Gate Charge VDS = 480 V, ID = 7.5A, -- 28 36 nC
Qgs Gate-Source Charge VGS = 10 V -- 4.5 -- nC
Qgd Gate-Drain Charge (Note 4, 5) -- 12 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward Current -- -- 7.5 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 30 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 7.5 A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0 V, IS = 7.5 A, -- 365 -- ns
Qrr Reverse Recovery Charge dIF / dt = 100 A/s (Note 4) -- 3.4 -- C

Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 7.3mH, IAS = 7.5 A, VDD = 50V, RG = 25 , Starting TJ = 25C
3. ISD 7.5A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C
4. Pulse Test : Pulse width 300s, Duty cycle 2%
5. Essentially independent of operating temperature

2004 Fairchild Semiconductor Corporation Rev. B, March 2004

 FQP8N60C/FQPF8N60C
Typical Characteristics

VGS
Top : 15.0 V
10.0 V
1 8.0 V
10 7.0 V 10
1

6.5 V
6.0 V

ID, Drain Current [A]

5.5 V o
ID, Drain Current [A]

150 C
Bottom : 5.0 V

o
0
10 25 C
o
10
0 -55 C

Notes : Notes :
10
-1
1. 250s Pulse Test 1. VDS = 40V
2. TC = 25 2. 250 s Pulse Test
-1
10
-1 0 1 2 4 6 8 10
10 10 10
VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

3.5

1
10
3.0
Drain-Source On-Resistance

IDR, Reverse Drain Current [A]

VGS = 10V
2.5
RDS(ON) [ ],

2.0
0
10

1.5
VGS = 20V

Notes :
1.0
150 25 1. VGS = 0V
Note : TJ = 25 2. 250s Pulse Test

0.5 10
-1

0 5 10 15 20 0.2 0.4 0.6 0.8 1.0 1.2 1.4

ID, Drain Current [A] VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation with Source Current
and Temperature

2000 12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
1800 Crss = Cgd
10 VDS = 120V
1600
VGS, Gate-Source Voltage [V]

1400 Ciss VDS = 300V

8
Capacitance [pF]

1200 VDS = 480V

1000 Coss 6

800
4
600 Notes ;
1. VGS = 0 V
Crss 2. f = 1 MHz
400
2
200 Note : ID = 8A

0 0
-1 0 1 0 5 10 15 20 25 30
10 10 10
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

2004 Fairchild Semiconductor Corporation Rev. B, March 2004

 FQP8N60C/FQPF8N60C
Typical Characteristics (Continued)

1.2 3.0
Drain-Source Breakdown Voltage

2.5

Drain-Source On-Resistance
1.1
BVDSS, (Normalized)

RDS(ON), (Normalized)
2.0

1.0 1.5

1.0

0.9 Notes :
1. VGS = 0 V Notes :
0.5 1. VGS = 10 V
2. ID = 250 A
2. ID = 4 A

0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o
TJ, Junction Temperature [ C]
o TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs Temperature vs Temperature

2
10
Operation in This Area
Operation in This Area
is Limited by R DS(on) 10 s 2
10 is Limited by R DS(on)

100 s 10 s
1
10
1 ms 100 s
ID, Drain Current [A]

ID, Drain Current [A]

1
10 ms 10
1 ms
100 ms 10 ms
DC
10
0 100 ms
0 DC
10

-1
10
Notes : -1
o 10 Notes :
1. TC = 25 C o
o
1. TC = 25 C
2. TJ = 150 C o
2. TJ = 150 C
3. Single Pulse
3. Single Pulse
-2
10 -2
0 1 2 3
10 10 10 10 10
0 1 2 3
10 10 10 10
VDS, Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]

Figure 9-1. Maximum Safe Operating Area Figure 9-2. Maximum Safe Operating Area
for FQP8N60C for FQPF8N60C

6
ID, Drain Current [A]

0
25 50 75 100 125 150
TC, Case Temperature []

Figure 10. Maximum Drain Current

vs Case Temperature

2004 Fairchild Semiconductor Corporation Rev. B, March 2004

 FQP8N60C/FQPF8N60C
Typical Characteristics (Continued)

0
10

D = 0 .5
Z JC(t), Thermal Response
0 .2

-1
10 0 .1

0 .0 5
N o te s :
1 . Z J C (t) = 0 .8 5 /W M a x .
0 .0 2 2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z J C (t)
0 .0 1
PDM
-2 s in g le p u ls e
10
t1
t2
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]

Figure 11-1. Transient Thermal Response Curve for FQP8N60C

D = 0 .5
0
10
Z JC(t), Thermal Response

0 .2

0 .1
0 .0 5 N o te s :
-1 1 . Z J C (t) = 2 .6 /W M a x .
10 2 . D u ty F a c to r, D = t 1 /t 2
0 .0 2 3 . T J M - T C = P D M * Z J C (t)
0 .0 1
PDM
s in g le p u ls e
-2
t1
10 t2

-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
t 1 , S q u a re W a v e P u ls e D u r a tio n [s e c ]

Figure 11-2. Transient Thermal Response Curve for FQPF8N60C

2004 Fairchild Semiconductor Corporation Rev. B, March 2004

 FQP8N60C/FQPF8N60C
Gate Charge Test Circuit & Waveform

VGS
Same Type
50K
as DUT Qg
12V 200nF
300nF 10V
VDS
VGS Qgs Qgd

DUT
3mA

Charge

Resistive Switching Test Circuit & Waveforms

RL VDS
VDS 90%

VGS VDD
RG

10%
VGS
10V DUT
td(on) tr td(off)
tf
t on t off

Unclamped Inductive Switching Test Circuit & Waveforms

L BVDSS
1
VDS EAS = ---- L IAS2 --------------------
2 BVDSS - VDD
BVDSS
ID
IAS
RG
VDD ID (t)

10V DUT VDD VDS (t)

tp
tp Time

2004 Fairchild Semiconductor Corporation Rev. B, March 2004

 FQP8N60C/FQPF8N60C
Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT +

VDS

I SD
L

Driver
RG
Same Type
as DUT VDD

VGS dv/dt controlled by RG

ISD controlled by pulse period

Gate Pulse Width

VGS D = --------------------------
Gate Pulse Period 10V
( Driver )

IFM , Body Diode Forward Current

I SD
( DUT ) di/dt

IRM

Body Diode Reverse Current

VDS
( DUT ) Body Diode Recovery dv/dt

VSD VDD

Body Diode
Forward Voltage Drop

2004 Fairchild Semiconductor Corporation Rev. B, March 2004

 FQP8N60C/FQPF8N60C
Package Dimensions

TO-220
9.90 0.20 4.50 0.20
1.30 0.10

(8.70)

2.80 0.10
(1.70)

+0.10
3.60 0.10 1.30 0.05

18.95MAX.
(3.70)

15.90 0.20
9.20 0.20

(1.46)

(3.00)
(45
)
(1.00)
13.08 0.20

10.08 0.30

1.27 0.10 1.52 0.10

0.80 0.10 +0.10

0.50 0.05 2.40 0.20
2.54TYP 2.54TYP
[2.54 0.20] [2.54 0.20]

10.00 0.20

Dimensions in Millimeters

2004 Fairchild Semiconductor Corporation Rev. B, March 2004

 FQP8N60C/FQPF8N60C
Package Dimensions (Continued)

TO-220F
3.30 0.10

10.16 0.20 3.18 0.10 2.54 0.20

(7.00) (0.70)

6.68 0.20

15.87 0.20
15.80 0.20

(1.00x45)

MAX1.47
9.75 0.30

0.80 0.10
(3
0
)

#1
0.35 0.10 +0.10
0.50 0.05 2.76 0.20
2.54TYP 2.54TYP
[2.54 0.20] [2.54 0.20]
4.70 0.20

9.40 0.20

Dimensions in Millimeters

2004 Fairchild Semiconductor Corporation Rev. B, March 2004

 TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx FACT Quiet series ISOPLANAR POP Stealth
ActiveArray FAST LittleFET Power247 SuperFET
Bottomless FASTr MICROCOUPLER PowerSaver SuperSOT-3
CoolFET FPS MicroFET PowerTrench SuperSOT-6
CROSSVOLT FRFET MicroPak QFET SuperSOT-8
DOME GlobalOptoisolator MICROWIRE QS SyncFET
EcoSPARK GTO MSX QT Optoelectronics TinyLogic
E2CMOS HiSeC MSXPro Quiet Series TINYOPTO
EnSigna I2C OCX RapidConfigure TruTranslation
FACT ImpliedDisconnect OCXPro RapidConnect UHC
Across the board. Around the world. OPTOLOGIC SILENT SWITCHER UltraFET
The Power Franchise OPTOPLANAR SMART START VCX
Programmable Active Droop PACMAN SPM

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

2004 Fairchild Semiconductor Corporation Rev. I9

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Contents How to order products

General description Application notes
Features Qualification Support Product Change Notices
Datasheet (PCNs)
Product status/pricing/packaging Download this
Order Samples datasheet Support

Sales support
General description
Quality and reliability
These N-Channel enhancement mode power field effect transistors are
produced using Fairchilds proprietary, planar stripe, DMOS technology. e-mail this datasheet
Design center
This advanced technology has been especially tailored to minimize on-state
resistance, provide superior switching performance, and withstand high
energy pulse in the avalanche and commutation mode. These devices are
well suited for high efficiency switched mode power supplies, active power This page
factor correction, electronic lamp ballasts based on half bridge topology. Print version

back to top

Features

z 7.5A, 600V, RDS(on) = 1.2 @VGS = 10 V

z Low gate charge ( typical 28 nC)
z Low Crss ( typical 12 pF)
z Fast switching
z 100% avalanche tested
z Improved dv/dt capability

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Product status/pricing/packaging

Product Product status Pb-free Status Pricing* Package type Leads Packing method Package Marking Convention**

Line 1: $Y (Fairchild logo)

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Product Folder - Fairchild P/N FQPF8N60C - 600V N-Channel Advance Q-FET C-Series Page 2 of 3

&Z (Asm. Plant Code)

&4 (4-Digit Date Code)
FQPF8N60C Full Production $1.12 TO-220F 3 RAIL
Line 2: FQPF Line 3: 8N60C

Line 1: $Y (Fairchild logo)

&Z (Asm. Plant Code)
FQPF8N60CT Full Production $1.14 TO-220F 3 RAIL
&E&3 (3-Digit Date Code)
Line 2: FQPF Line 3: 8N60CT

Line 1: $Y (Fairchild logo)

FQPF8N60CYDTU Full Production $1.26 TO-220F 3 RAIL &Z (Asm. Plant Code)
&4 (4-Digit Date Code)

* Fairchild 1,000 piece Budgetary Pricing

** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please
contact a Fairchild distributor to obtain samples

Indicates product with Pb-free second-level interconnect. For more information click here.

Package marking information for product FQPF8N60C is available. Click here for more information .

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Application notes

AN-6014: AN-6014 Green Current Mode PWM Controller FAN7602 (390 K)

Jul 27, 2007

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Qualification Support

Click on a product for detailed qualification data

Product
FQPF8N60C
FQPF8N60CT
FQPF8N60CYDTU

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2007 Fairchild Semiconductor

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