FET CHARACTERISTICS (JFET AND MOSFET)

SANU KUMAR GANGWAR

16510072
M.SC. PHYSICS
IIT GANDHINAGAR
sanu.gangwar@iitgn.ac.in

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Physics Lab Report IIT GANDHINAGAR

Contents
1 OBJECTIVE 3

2 THEORY 3
2.1 Field effect transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.2 Type of FET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.3 Junction field effect transistors(JFET) . . . . . . . . . . . . . . . . . . . . . 3
2.3.1 Output/ Drain characteristics . . . . . . . . . . . . . . . . . . . . . . 4
2.3.2 Transfer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.3.3 JFET parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR 6

3.1 MOSFET Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3.1.1 Transfer Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . 7
3.1.2 Drain Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

4 OBSERVATION 9
4.1 Observation Table for MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . 9
4.1.1 table for Drain Characteristics . . . . . . . . . . . . . . . . . . . . . . 9
4.1.2 Graph For Drain Characteristics . . . . . . . . . . . . . . . . . . . . . 10
4.1.3 table for Transfer Characteristics . . . . . . . . . . . . . . . . . . . . 10
4.1.4 Graph For Transfer Characteristics . . . . . . . . . . . . . . . . . . . 11
4.2 Observation Table for JFET . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4.2.1 table for Drain Characteristics . . . . . . . . . . . . . . . . . . . . . . 11
4.2.2 Graph For Drain Characteristics . . . . . . . . . . . . . . . . . . . . . 12
4.2.3 table for Transfer Characteristics . . . . . . . . . . . . . . . . . . . . 12
4.2.4 Graph For Transfer Characteristics . . . . . . . . . . . . . . . . . . . 12

5 CALCULATION 13
5.1 For MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
5.2 For JFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

6 RESULT 13

7 REFERENCE 14

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1 OBJECTIVE
To study the Drain and Transfer characteristics of JFET and MOSFET.
To Plot the characteristics of FET determine rd , gm , , IDSS,Vp .
Plot between Gate Source voltage (Vgs ) and Drain current (Id ) of a N Channel Enhancement
MOSFET.

2 THEORY
2.1 Field effect transistor
Field Effect Transistor (FET) is a voltage controlled device unlike BJT which is current
controlled electronic device. BJT has a low input impedance because of forward biased
emmitter junction and it also has considerable level of noise while the field effect transis-
tor(FET) has,by virtue of its construction and biasing , large input impedance which may be
more than 100 megaohms.The FET generally much less noisy than the ordinary or bipolar
transistors.
In further section , we will focus on the working of FET in different mode, corresponding
characteritics curve and parameter in different mode.

2.2 Type of FET

There are two basic types of field effect transistor:
Junction field effect transistors(JFET)

Metal oxide semiconductor field effect transistor(MOSFET)

2.3 Junction field effect transistors(JFET)

A junction field effect transistor is a three terminal semiconductor device in which current
conductance is by one type of carrier i.e,electrons or holes.
A JFET consists of a p-type or n-type silicon bar containing two pn junctions at the sides
as shown in figure below.The bar forms the conducting channel for the charge carriers.If the
baris of n-type ,it is called n-channel JFET and if the bar is of the p-type then it is called
p-channel JFET also shown in figure below.

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The voltage between the gate and the source is such that the gate is reversed biased, this
is the normal way of JFET connections. The drain and source terminals are interchangeable
i.e either end can be used as source and the other end as drain.

Schematic symbol of JFET

2.3.1 Output/ Drain characteristics

It is the curve plotted between output drain current ID versus output drain to source voltage
VDS for constant values of input Gate to source voltage VGS as shown in figure below.

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The characteristics curves are shown in above figure, shows the four different regions of
operation for a JFET and these are given as:
Ohmic Region - When VGS = 0 the depletion layer of the channel is very small and the
JFET acts like a voltage controlled resistor

Cut-off Region - This is also known as the pinch-off region were the Gate voltage, VGS is
sufficient to cause the JFET to act as an open circuit as the channel resistance is at maximum.

Saturation or Active Region - The JFET becomes a good conductor and is controlled by
the Gate-Source voltage, (VDS ) while the Drain-Source voltage, (VGS ) has little or no effect.

Breakdown Region - The voltage between the Drain and the Source, (VGS ) is high
enough to causes the JFETs resistive channel to break down and pass uncontrolled maximum
current.
Drain current in the active region is
 2
VGS
ID = IDSS 1
VGS(of f )

And Drain source channel resistance is

VDS
rds =
ID

2.3.2 Transfer characteristics

It is the curve plotted between output drain current versus input Gate to source voltage for
constant values of output drain to source voltage as shown in below figure.

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2.3.3 JFET parameters

JFET Forward Transconductance:: Forward Transconductance gm is the change in
drain current for a given change in gate source voltage.
ID
gm =
VGS
or  2
VGS
gm = gm0 1
VGS(of f )
2IDSS
gm0 =
|VGS(of f |
JFET Input Resistance

 
 VGS 
RIN =  
IGSS 
JFET Drain to Source Resistance

VDS
rds =
ID

3 METAL OXIDE SEMICONDUCTOR FIELD EF-

FECT TRANSISTOR
Metal oxide semiconductor field effect transistor. Field Effect Transistor with Gate input
is electrically insulated from the main current carrying channel and is therefore called an
Insulated Gate Field Effect Transistor or IGFET or MOSFET.

Fig.5: Schematic Diagram of MOSFET

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MOSFET is also of two type.

Depletion Type:: The transistor requires the Gate-Source voltage, VGS to switch the
device OFF. The depletion mode MOSFET is equivalent to a Normally Closed switch.

Enhancement Type:: The transistor requires a Gate-Source voltage, VGS to switch the
device ON. The enhancement mode MOSFET is equivalent to a Normally Open switch.

Fig.6: Schematic Diagram of E- and D- MOSFET

Fig.7: Schematic symbol of MOSFET

3.1 MOSFET Characteristics

3.1.1 Transfer Characteristics
Figure shows a typical transfer characteristics. The current IDSS at VGS <= 0 is very small,
being of the order of a few nano-amperes. When the VGS is made positive, the drain current
ID increases slowly at first, and then much more rapidly with an increase in VGS .

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Fig.8: Transfer Characteristics of MOSFET

3.1.2 Drain Characteristics

Drain characteristics of an N-channel E-MOSFET are shown in figure. The lowest curve
is the VGST curve. When VGS is lesser than VGST , ID is approximately zero. When VGS is
greater than VGST , the device turns- on and the drain current ID is controlled by the gate
voltage.

Fig.9: Drain Characteristics of MOSFET

Amplification factor,

VDS 
=
VGS ID =const

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4 OBSERVATION
4.1 Observation Table for MOSFET
4.1.1 table for Drain Characteristics
S.N. VDS (V) ID |VGS =5V (mA) ID |VGS =6V (mA) ID |VGS =7V (mA)
1 0 0 0 0
2 0.2 1.1 1.1 1.3
3 0.4 2.4 2.2 2.2
4 0.6 3.2 3.2 3.3
5 0.8 4.2 4.2 4.3
6 1 5.4 5.3 5.4
7 1.2 6.5 6.3 6.4
8 1.4 7.3 7.3 7.3
9 1.6 8.5 8.4 8.4
10 1.8 9.6 9.4 9.4
11 2 10.5 10.5 10.4
12 2.2 11.6 11.4 11.6
13 2.4 12.7 12.6 12.6
14 2.6 13.9 13.6 13.6
15 2.8 14.7 14.6 14.7
16 3 15.7 15.7 15.8
17 3.2 16.8 16.9 16.9
18 3.4 17.7 17.5 17.6
19 3.6 18.4 18.7 18.8
20 3.8 19 19.6 20
21 4 19 20.7 20.9
22 4.4 19 23 23
23 4.8 19.1 24.9 25.9
24 5.2 19.1 27 27
25 5.6 19.1 28.6 29
26 6 19.1 28.9 31.4
27 6.4 19.1 28.9 33.2
28 6.8 19.1 28.9 35.4
29 7.2 19.1 28.9 37.9
30 7.6 19.1 28.9 39.1
31 8 19.1 28.9 39.6
32 10 19.1 28.9 39.6
33 12 19.2 28.9 39.6
34 14 19.2 29.1 39.7
35 20 19.2 29.2 39.8

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4.1.2 Graph For Drain Characteristics

Graph: Drain Characteristics of MOSFET

4.1.3 table for Transfer Characteristics

S.N. VGS (V ) ID |VDS =10V (mA) ID |VDS =20V (mA)
1 0 0 0
2 0.8 0 0
3 1.6 0 0
4 2.4 0 0
5 2.6 0.1 0
6 2.8 0.5 0.6
7 3 1.5 1.2
8 3.2 2.6 2.6
9 3.4 4.5 4.2
10 3.6 5.7 6.1
11 3.8 7.6 7.9
12 4 7.8 9.6
13 4.2 7.8 11.8
14 4.4 7.8 13.5
15 4.6 7.9 13.5
16 5 7.9 13.5

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4.1.4 Graph For Transfer Characteristics

Graph:Transfer Characteristics of MOSFET

4.2 Observation Table for JFET

4.2.1 table for Drain Characteristics
S.N. VDS (V) ID |VGS =0V (mA) ID |VGS =1V (mA) ID |VGS =2V (mA)
1 0 0 0 0
2 0.2 6.9 4.2 1.9
3 0.4 12.3 7.9 3.2
4 0.6 18.4 10.4 4.1
5 0.8 22 12.4 4.6
6 1 26.2 14.6 5.1
7 1.2 29.2 15.9 5.4
8 1.4 31.5 17.3 5.6
9 1.6 33.5 18.1 5.8
10 1.8 35.2 18.9 5.9
11 2 36.6 19.2 6.2
12 2.2 37.5 19.8 6.3
13 2.4 38.6 20.1 6.4
14 2.6 39.5 20.4 6.5
15 2.7 39.8 20.5 6.5
16 3.4 40.6 21.1 6.8
17 4.4 40.7 21.3 7
18 5.5 40.9 21.7 7.3
19 6.5 41.2 22 7.5
20 8.3 41.5 22.3 7.8
21 10.5 41.7 22.5 8.1
22 13 41.7 22.6 8.4
23 14 41.7 22.6 8.4

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4.2.2 Graph For Drain Characteristics

Graph: Drain Characteristics of JFET

4.2.3 table for Transfer Characteristics

S.N. VGS (V ) ID |VDS =10V (mA)
1 0 39.6
2 -0.5 28.9
3 -0.8 24.5
4 -1 21.2
5 -1.3 17.2
6 -1.6 12.8
7 -2 8.2
8 -2.3 4.1
9 -2.6 1.9
10 -2.9 0.2
11 -3.2 0

4.2.4 Graph For Transfer Characteristics

Graph:Transfer Characteristics of JFET

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5 CALCULATION
5.1 For MOSFET
Transconductance
ID
gm =
VGS
gm = 7.65|VDS =10V Siemens(S)/ohm
{Slopeof graphiscalculatedinExcel, F ormulaf orslopeinexcelis = SLOP E(A8 : A12, B8 : B12)}
Similarly

gm = 8.85|VDS =20V Siemens(S)/ohm

Drain to Source Resistance
VDS
rds =
ID
rds = 5.222 103

5.2 For JFET

Transconductance
ID
gm =
VGS
gm = 13.0697|VDS =10V Siemens(S)/ohm
Drain to Source Resistance
VDS
rds =
ID
rds = 5.222 103

6 RESULT
On behalf of this experiment we verified the characteristic curves of JFET and MOSFET.
Transcondutance gm of JFET is 13.06siemens/ohm at fixed VDS and 8.45siemens/ohm for
MOSFET.
Drain source resistance is calculated for both the cases over here.

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7 REFERENCE
IITGN lab manual provided by TAs
Principles of electronics by V.K Mehta
https://www.myodesie.com/wiki/index/returnEntry/id/2952
http://todayscircuits.blogspot.com/2011/06/characteristics-of-jfets.html
http://www.circuitstoday.com/emosfet-enhancement-mosfet
https://nanohub.org/courses/NT/s2016/outline/unit1transistorfundamentals/l12themosfetasablackbox

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