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Experiment-291 S
OPTOCOULPER
CHARACTERISTICS
Dr Jeethendra Kumar P K
KamalJeeth Instrumentation & Service Unit, TATA Nagar Bangalore-560 092.INDIA.
Email: jeeth_kjisu@rediffmail.com
Abstract
Using a 4N35 optocoupler; input, output and transfer characteristics curves are
drawn and the type of emitter diode and photo detector are identified. The current
and voltage transfer ratios of the optocoupler are also determined.
Introduction
Electrically isolated circuits that exchange signals between them are called Optocouplers or
Optoisolators. Such circuits are used to control different devices or apparatus that remain
electrically isolated from one another. Since there is an electrical isolation there can be a
different ground point, which is the advantage in opto-coupling. A PC to control industrial
process control unit having high voltage unit can be easily coupled through this optocoupler.
An IRLED - photo transistor matched pair forms a good optocoupler. Different types of
photo detectors result in different optocoupler, such as a phototransistor optocoupler, SCR or
TRIAC based optocoupler. Among the three, IR-LED-phototransistor based optocouplers are
most commonly used.
Both the IRLED and Photo transistors are placed inside an IC as shown in Figure-1. The base
terminal of the photo transistor is brought out as the 6th pin of the IC. However, it is not
connected electrically.
Rd Rc
VCC
IR-LED Photo-Transistor IR-LED Photo-Transistor
VDD
A series resistance is added to the input diode circuit to protect the IR emitter which fixes the
current through the emitter diode. For 4N35, the maximum diode current is 60mA. Hence Rd
is suitably chosen according to the supply voltage VDD. Similarly the resistor Rc protects the
photo transistor from excessive voltage that may burn it out. The collector-emitter voltage for
4N35 is 30V. It is a common practice to keep half the maximum rating as the diode current
photo detector voltage. The maximum power dissipation of 4N35 is 150mW. In no case one
should exceed this power rating. From Figure-2 it is seen that there are two power supplies
that are isolated fully. There is no common connection between the input and output circuits
which is the main advantage of the optocoupler.
Optocoupler Characteristics
Similar to discrete semiconductor device characteristics, optocoupler characteristics are set of
curves that relate the voltage and current flowing through it. In an optocoupler we see two
discrete devices, namely the diode at the input side and a photo transistor at the output side.
By drawing the individual characteristics curves one can identify the type of diode and photo
detector used inside the IC. The input diode will have forward knee voltage which depends
on its material. For example, a silicon diode has 0.6V knee voltage and LEDs of different
colors will have different knee voltages varying from 1V to 4V. Once the knee voltage and
the wavelength are known, the semiconductor material can be identified. On the output side
we have a photo transistor. The material of the photo transistor can be identified by its
saturation voltage. Hence by the characteristics curves the material used in the optocoupler
can be identified.
optocoupler. The current transfer ratio (CTR) varies from 10% to 200% for devices of
different makes. An optocoupler with 50% CTR is found to be extremely good in practice.
CTR is defined as the ratio of saturated collector current to input diode current that produces
saturation of the photo detector.
CTR= 1
As the light intensity increases, the collector current increases proportionately and becomes
constant. Under this condition the transistor is conducting fully, or in other words it is
saturated. This maximum collector current is denoted Icsat.
CTR = 2
.
VTR = = =. = 0.24
This is constant for a given optocoupler. If the photo detector is not conducting fully this ratio
will be large.
Apparatus Used
Procedure
The experiment consists of five parts:
220
5V
Variable 1
Vin V
2
2. The current meter is now connected in series with the diode to measure the diode
current ID.
3. The voltmeter is connected across Vin, to measure the voltage across the diode
junction.
Table-1
Vin(V) ID(mA) Vin(V) ID(mA)
0 0 1.15 9.0
0.2 0 1.18 14.1
0.4 0 1.20 20.7
0.6 0 1.22 25.6
0.8 0 1.24 34.4
1.0 0.2 1.25 39.9
1.1 2.5 1.28 48.3
Input Characteristics curve
4. The voltage Vin is set to 0.2 volt and the current ID is recorded in Table-1.
5. The trial is repeated by varying Vin is steps of 0.1V and the corresponding current is
noted in Table-1.
60
6. Figure-5 shows the input characteristics curve. From curve the knee voltage at which
the diode starts conducting is noted.
8. The voltage VCE is set to 0.05V by varying the power supply, and the current IC is
noted in Table-2.
9. The trial is repeated by varying VCE in suitable steps and in each case IC is noted in
Table-2.
10. A graph showing the variation of IC with VCE is shown in Figure-7. From the graph,
which resembles a transistor output characteristics curve, the saturation voltage,
VCEsat, from the curve is
VCEsat = 0.3V. This saturation voltage indicates that the photo detector is a silicon
photo transistor.
IC 220
5
0-5V
Variable
VCE V
Table-2
VCE(V) IC(mA) VCE(V) IC(mA)
0 0 0.35 21.6
0.05 1.8 0.40 22.8
0.1 5 0.45 23.5
0.15 9.6 0.50 24.2
0.2 13.8 0.55 24.8
0.25 17.7 0.60 25.4
0.3 20.1 0.62 25.6
Output characteristics
30
Collector current IC(mA)
25
20
15
10
5
0
0 0.2 0.4 0.6 0.8
Collector-emitter voltage VCE(V)
11. Current ID is set by varying variable power supply in the range of 0-5V.
13. A curve is drawn as shown in Figure-9. This is the transfer characteristics curve
which resembles a switching curve and it indicates that the optocoupler acts like a
switch, similar to a transistor switch.
R ID R
220 IC 220
5
5V 1 5V
Variable
VCE V
2
4
Table-3
ID(mA) VCE(V) ID(mA) VCE(V) ID(mA) VCE(V)
0 4.97 7 1.32 14 0.83
1 4.69 8 1.21 16 0.74
2 4.00 9 1.13 18 0.65
3 3.32 10 1.06 20 0.60
4 2.64 11 0.99 28 0.39
5 1.92 12 0.93 30 0.36
6 1.39 13 0.88 49 0.26
Transfer characteristics
5
Collector-emitter Volatge
4
3
2
(V)
1
0
0 10 20 30 40 50
Doide current (mA)
14. With same circuit diagram, ID is reduced to the minimum and increased slowly
watching the voltmeter. The voltmeter now reads VCE.
15. ID is increased until VCE = 0.30V. This indicated that the transistor is conducting fully
or it is saturated. The diode current that produces saturation is noted.
ID =37.3mA.
At this point, the collector current IC is noted by opening the short across IC sockets
and inserting the current meter. (When the current meter is shifted from the diode
circuit to phototransistor circuit, terminal across ID has to be shorted).
Icsat =21.5mA
.
CTR =. = 0.576 = 57%
The trial is repeated once again to find consistent values, as shown in Table-4. The
average value is taken as CTR.
Table-4
Icsat(mA) ID(mA) CTR
21.5 37.3 0.576
21.5 37.7 0.570
21.5 39.0 0.551
21.5 38.4 0.559
Average CTR 0.564
CTR calculations
ID=30mA.
VD = 1.23V
VCEsat = 0.3V
.
VTR =. = 0.24= 24%
Results
Table-5
Parameters Expt. Standard
Emitter diode IR LED -
Emitter Wavelength (nm) 1127 900-1200
CTR (%) 56 10-200
VTR (%) 24 24
Detector Saturation Voltage(V) 0.3 0.3
Emitter knee voltage (V) 1.1 1.25
Detector transistor Silicon phototransistor
Experimental results
Discussion
From this experimental study we conclude the following:
2. The saturation voltage of 0.3V indicates that the photo detector is a silicon photo
transistor.
3. The maximum power transmitted by the IR-LED is = 1.28Vx48.3mA= 62mW and the
saturated maximum power of photo detector is 0.3x20mA =6mW. These values
indicate that when one is linking the signal through an optocoupler, there is a loss of
power. Not all the electrical power given to the diode is reflected at the photo
detector. Only 10% of the input power is converted into output power in the photo
detector. The remaining 90% of the input power is lost in the process of coupling.
This 10% power produced is sufficient for switch applications.
References
[1] http://www.electronicrepairguide.com/optocoupler