From the transistor switching circuit shown in FIGURE 10.7
A bipolar transistor is connected to a resistive load. The source voltage is VCC 40 V Load resistance RL 10 In the saturation region, the transistor parameters are: The collector-emitter voltage is VCE 0.1 V IC
IB Current gain is 5
a) The loop equation of the collector circuit is:
VCC VCE RL IC RL IC VCC VCE VCC VCE IC RL Therefore, the Load current or collector current in the circuit is: 40 0.1 IC 10 39.9 IC 10 IC 3.99 A
b) The Load power in a transistor circuit is:
PL VCC IC PL 40 3.99 PL 159.6 W The losses in the collector-emitter circuit are: PCE IC VCE PCE 3.99 0.1 PCE 0.399 PCE 0.399 W
c) The base current in the circuit is:
IC IB
3.99 IB 5 IB 0.798 A The losses in the base-emitter circuit are: PBE IB VBE Since the base-emitter junction is just a diode in the forward bias, we can assume that VBE is about 0.7V. PBE 0.798 0.7 Therefore, PBE 0.5586 PBE 0.5586 W
d) The emitter efficiency of the circuit is:
IC E 100% IC IB 3.99 E 100% 3.99 0.798 3.99 E 100% 4.788 E 0.834 100% E 83.4% The input power in a transistor circuit is equals to Load power in a transistor circuit Plus losses in a transistor circuit PI PL PBE PCE PI 159.6 0.5586 0.399 PI 160.5576 W
The efficiency of the circuit is
PL 100% PI 159.6 100% 160.5576 0.99403 100% 99.403 %