FDP7N60NZ / FDPF7N60NZ N-Channel UniFETTM II MOSFET

March 2013

FDP7N60NZ / FDPF7N60NZ
N-Channel UniFETTM II MOSFET
600 V, 6.5 A, 1.25
Features Description
RDS(on) = 1.05 (Typ.) @ VGS = 10 V, ID = 3.25 A UniFETTM II MOSFET is Fairchild Semiconductors high volt-
age MOSFET family based on advanced planar stripe and
Low Gate Charge (Typ. 13 nC) DMOS technology. This advanced MOSFET family has the
smallest on-state resistance among the planar MOSFET, and
Low Crss (Typ. 7 pF)
also provides superior switching performance and higher ava-
100% Avalanche Tested lanche energy strength. In addition, internal gate-source ESD
diode allows UniFET II MOSFET to withstand over 2kV HBM
Improved dv/dt Capability
surge stress. This device family is suitable for switching power
ESD Improved Capability converter applications such as power factor correction (PFC), flat
panel display (FPD) TV power, ATX and electronic lamp ballasts.
RoHS Compliant

Applications
LCD/LED TV
Lighting

Uninterruptible Power Supply

AC-DC Power Supply

G
G
D TO-220 D TO-220F
S S

MOSFET Maximum Ratings TC = 25oC unless otherwise noted*

Symbol Parameter FDP7N60NZ FDPF7N60NZ Unit
VDSS Drain to Source Voltage 600 V
VGSS Gate to Source Voltage 30 V
- Continuous (TC = 25oC) 6.5 6.5*
ID Drain Current A
- Continuous (TC = 100oC) 3.9 3.9*
IDM Drain Current - Pulsed (Note 1) 26 26* A
EAS Single Pulsed Avalanche Energy (Note 2) 275 mJ
IAR Avalanche Current (Note 1) 6.5 A
EAR Repetitive Avalanche Energy (Note 1) 14.7 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 10 V/ns
(TC = 25oC) 147 33 W
PD Power Dissipation
- Derate above 25oC 1.2 0.26 W/oC
o
TJ, TSTG Operating and Storage Temperature Range -55 to +150 C
Maximum Lead Temperature for Soldering Purpose, o
TL 300 C
1/8 from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol Parameter FDP7N60NZ FDPF7N60NZ Unit
RJC Thermal Resistance, Junction to Case, Max. 0.85 3.8
o
RCS Thermal Resistance, Case to Sink, Typ. 0.5 - C/W
RJA Thermal Resistance, Junction to Ambient, Max. 62.5 62.5

2010 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FDP7N60NZ / FDPF7N60NZ Rev. C0
 FDP7N60NZ / FDPF7N60NZ N-Channel UniFETTM II MOSFET
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking Device Package Reel Size Tape Width Quantity
FDP7N60NZ FDP7N60NZ TO-220 - - 50
FDPF7N60NZ FDPF7N60NZ TO-220F - - 50

Electrical Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Unit

Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = 250A, VGS = 0V, TJ = 25oC 600 - - V
BVDSS Breakdown Voltage Temperature
ID = 250A, Referenced to 25oC - 0.6 - V/oC
TJ Coefficient
VDS = 600V, VGS = 0V - - 1
IDSS Zero Gate Voltage Drain Current A
VDS = 480V, TC = 125oC - - 10
IGSS Gate to Body Leakage Current VGS = 25V, VDS = 0V - - 10 A

On Characteristics
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250A 3 - 5 V
RDS(on) Static Drain to Source On Resistance VGS = 10V, ID = 3.25A - 1.05 1.25
gFS Forward Transconductance VDS = 20V, ID = 3.25A - 7.3 - S

Dynamic Characteristics
Ciss Input Capacitance - 550 730 pF
VDS = 25V, VGS = 0V
Coss Output Capacitance - 70 90 pF
f = 1MHz
Crss Reverse Transfer Capacitance - 7 10 pF
Qg(tot) Total Gate Charge at 10V - 13 17 nC
Qgs Gate to Source Gate Charge VDS = 480V, ID = 6.5A - 3 - nC
VGS = 10V
Qgd Gate to Drain Miller Charge (Note 4) - 5.6 - nC

Switching Characteristics
td(on) Turn-On Delay Time - 17.5 45 ns
tr Turn-On Rise Time VDD = 300V, ID = 6.5A - 30 70 ns
td(off) Turn-Off Delay Time RG = 25 - 40 90 ns
tf Turn-Off Fall Time (Note 4) - 25 60 ns

Drain-Source Diode Characteristics

IS Maximum Continuous Drain to Source Diode Forward Current - - 6.5 A
ISM Maximum Pulsed Drain to Source Diode Forward Current - - 26 A
VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 6.5A - - 1.4 V
trr Reverse Recovery Time VGS = 0V, ISD = 6.5A - 250 - ns
Qrr Reverse Recovery Charge dIF/dt = 100A/s - 1.4 - C

Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L =13mH, IAS = 6.5A, VDD = 50V, RG = 25, Starting TJ = 25C
3: ISD 6.5A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C
4: Essentially Independent of Operating Temperature Typical Characteristics

2010 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com

FDP7N60NZ / FDPF7N60NZ Rev. C0
 FDP7N60NZ / FDPF7N60NZ N-Channel UniFETTM II MOSFET
Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

20 100
VGS = 15.0 V
10 10.0 V
8.0 V
7.0 V

ID, Drain Current[A]

6.5 V
ID, Drain Current[A]

10
6.0 V
o
150 C

o
25 C
1
1
o
-55 C
*Notes: * Notes :
1. 250s Pulse Test 1. VDS = 20V
o
2. TC = 25 C 2. 250s Pulse Test
0.1 0.1
0.1 1 10 20 4 5 6 7 8
VDS, Drain-Source Voltage[V] VGS, Gate-Source Voltage[V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
2.0 100

1.8
IS, Reverse Drain Current [A]
Drain-Source On-Resistance

o
1.6 150 C
RDS(on) [],

1.4 10
o
VGS = 10V 25 C

1.2 VGS = 20V

Notes:
1.0 1. VGS = 0V

* Note : TJ = 25 C
o 2. 250s Pulse Test
0.8 1
0 2 4 6 8 10 12 14 0.4 0.6 0.8 1.0 1.2 1.4
ID, Drain Current [A] VSD, Body Diode Forward Voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

5000 10
VDS = 120V
VGS, Gate-Source Voltage [V]

VDS = 300V
1000 Ciss 8 VDS = 480V
Capacitances [pF]

Coss
6
100

Ciss = Cgs + Cgd (Cds = shorted) 4

Crss
Coss = Cds + Cgd
10 Crss = Cgd

* Note: 2
1. VGS = 0V
* Note : ID = 6.5A
2. f = 1MHz
1 0
0.1 1 10 30 0 2 4 6 8 10 12 14
VDS, Drain-Source Voltage [V] Qg, Total Gate Charge [nC]

2010 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com

FDP7N60NZ / FDPF7N60NZ Rev. C0
 FDP7N60NZ / FDPF7N60NZ N-Channel UniFETTM II MOSFET
Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs Temperature
1.2 3.0
Drain-Source Breakdown Voltage

2.5

Drain-Source On-Resistance
1.1
BVDSS, [Normalized]

RDS(on), [Normalized]
2.0

1.0 1.5

1.0

0.9 * Notes :
* Notes : 0.5
1. VGS = 10V
1. VGS = 0V 2. ID = 3.25A
2. ID = 250uA 0
0.8 -100 -50 0 50 100 150
-100 -50 0 50 100 150 o
TJ, Junction Temperature [ C]
o
TJ, Junction Temperature [ C]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
-FDPF7N60NZ -FDP7N60NZ
100 100

10s 30s
ID, Drain Current [A]

100s
ID, Drain Current [A]

10 10 100s
1ms 1ms
10ms
10ms
1 1
Operation in This Area DC Operation in This Area DC
is Limited by R DS(on) is Limited by R DS(on)

0.1 * Notes : * Notes :

o
0.1
1. TC = 25 C o
1. TC = 25 C
o o
2. TJ = 150 C 2. TJ = 150 C
3. Single Pulse 3. Single Pulse
0.01 0.01
1 10 100 1000 1 10 100 1000
VDS, Drain-Source Voltage [V] VDS, Drain-Source Voltage [V]

Figure 11. Maximum Drain Current vs Case Temperature

6
ID, Drain Current [A]

0
25 50 75 100 125 150
o
TC, Case Temperature [ C]

2010 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com

FDP7N60NZ / FDPF7N60NZ Rev. C0
 FDP7N60NZ / FDPF7N60NZ N-Channel UniFETTM II MOSFET
Figure 12. Transient Thermal Response Curve
-FDPF7N60NZ

0.5
Thermal Response [ZJC]

1
0.2

0.1

0.05 PDM

0.1 0.02 t1
t2
0.01 * Notes :
o
Single pulse 1. ZJC(t) = 3.8 C/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZJC(t)
0.01
-5 -4 -3 -2 -1 0 1 2 3
10 10 10 10 10 10 10 10 10
Rectangular Pulse Duration [sec]

Figure 13. Transient Thermal Response Curve

-FDP7N60NZ

5
Thermal Response [ZJC]

1
0.5

0.2
0.1 0.1
0.05 PDM
0.02 t1
0.01 t2
0.01 * Notes :
Single pulse
o
1. ZJC(t) = 0.85 C/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZJC(t)
0.001
-5 -4 -3 -2 -1 2 3
10 10 10 10 10 1 10 10 10
Rectangular Pulse Duration [sec]

2010 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com

FDP7N60NZ / FDPF7N60NZ Rev. C0
 FDP7N60NZ / FDPF7N60NZ N-Channel UniFETTM II MOSFET
Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

2010 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com

FDP7N60NZ / FDPF7N60NZ Rev. C0
 FDP7N60NZ / FDPF7N60NZ N-Channel UniFETTM II MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT +

VDS

I SD
L

Driver
RG
Same Type
as DUT VDD

VGS dv/dt controlled by RG

ISD controlled by pulse period

Gate Pulse Width

VGS D = --------------------------
Gate Pulse Period 10V
( Driver )

IFM , Body Diode Forward Current

I SD
( DUT ) di/dt

IRM

Body Diode Reverse Current

VDS
( DUT ) Body Diode Recovery dv/dt

VSD VDD

Body Diode
Forward Voltage Drop

2010 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com

FDP7N60NZ / FDPF7N60NZ Rev. C0
 FDP7N60NZ / FDPF7N60NZ N-Channel UniFETTM II MOSFET
Mechanical Dimensions

TO-220B03

Dimensions in Millimeters

2010 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com

FDP7N60NZ / FDPF7N60NZ Rev. C0
 FDP7N60NZ / FDPF7N60NZ N-Channel UniFETTM II MOSFET
Package Dimensions (Continued)

TO-220M03

Dimensions in Millimeters

2010 Fairchild Semiconductor Corporation 9 www.fairchildsemi.com

FDP7N60NZ / FDPF7N60NZ Rev. C0
 FDP7N60NZ / FDPF7N60NZ N-Channel UniFETTM II MOSFET
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PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification Product Status Definition
Datasheet contains the design specifications for product development. Specifications
Advance Information Formative / In Design may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later

Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

No Identification Needed Full Production make changes at any time without notice to improve the design.

Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I64

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FDP7N60NZ / FDPF7N60NZ Rev. C0
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