Si9407AEY

Vishay Siliconix

P-Channel 60-V (D-S), 175C MOSFET


  
VDS (V) rDS(on) (
) ID (A)
0.120 @ VGS = 10 V
3.5
60
0.15 @ VGS = 4.5 V
3.1

S S S

SO-8

S 1 8 D G
S 2 7 D

S 3 6 D

G 4 5 D

Top View D D D D

P-Channel MOSFET

         


Parameter Symbol Limit Unit
Drain-Source Voltage VDS 60
V
Gate-Source Voltage VGS
20

TA = 25C
3.5
Continuous Drain Current (TJ = 150C)a ID
TA = 70C
3.0
A
Pulsed Drain Current IDM
30

Continuous Source Current (Diode Conduction)a IS 2.5

TA = 25C 3.0
Maximum Power Dissipationa PD W
TA = 70C 2.1

Operating Junction and Storage Temperature Range TJ, Tstg 55 to 175 C

    

Parameter Symbol Limit Unit

Maximum Junction-to-Ambienta RthJA 50 C/W

Notes
a. Surface Mounted on FR4 Board, t  10 sec.

Document Number: 70742 www.vishay.com
FaxBack 408-970-5600

S-99445Rev. C, 29-Nov-99 2-1
Si9407AEY
Vishay Siliconix


       
 
 



Parameter Symbol Test Condition Min Typa Max Unit

Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 1 V

Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA

VDS = -60 V, VGS = 0 V 1

Zero Gate Voltage Drain Current IDSS mA
VDS = -60 V, VGS = 0 V, TJ = 55C 10
On-State Drain Currentb ID(on) VDS v 5 V, VGS = 10 V 20 A
VGS = 10 V, ID = 3.5 A 0.120
Drain-Source On-State Resistanceb rDS(on) W
VGS = 4.5 V, ID = 3.1 A 0.150
Forward Transconductanceb gfs VDS = 15 V, ID = 3.5 A 8 S
Diode Forward Voltageb VSD IS = 2.5 A, VGS = 0 V 1.2 V

Dynamica
Total Gate Charge Qg 18 30

Gate-Source Charge Qgs VDS = 30

30 V
V, VGS = 10
10 V
V, ID = 3.5
35A 5 nC
C
Gate-Drain Charge Qgd 2
Turn-On Delay Time td(on) 8 15
Rise Time tr VDD = 30 V,, RL = 30 W
30 V 10 20
Turn-Off Delay Time td(off) ID ^ 1
1 A,
A VGEN = 10 V, RG = 6 W
10 V 35 50 ns
Fall Time tf 12 25
Source-Drain Reverse Recovery Time trr IF = 2.5 A, di/dt = 100 A/ms 70 100

Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.

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FaxBack 408-970-5600 Document Number: 70742

2-2 S-99445Rev. C, 29-Nov-99
 Si9407AEY
Vishay Siliconix

 
       

Output Characteristics Transfer Characteristics

30 30
VGS = 10, 9, 8, 7 V 6V TC = 55C
5V
25 25
25C
I D Drain Current (A)

I D Drain Current (A)

20 20

150C
15 15
4V

10 10

5 2V 3V 5

0 0
0 1 2 3 4 5 0 1 2 3 4 5 6

VDS Drain-to-Source Voltage (V) VGS Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current Capacitance

0.20 1500
r DS(on) On-Resistance (
)

1200
Ciss
0.15
C Capacitance (pF)

VGS = 4.5 V
900

0.10 VGS = 10 V
600

0.05
300 Coss
Crss

0.00 0
0 5 10 15 20 25 30 0 10 20 30 40 50 60

ID Drain Current (A) VDS Drain-to-Source Voltage (V)

Gate Charge On-Resistance vs. Junction Temperature

10 2.0

VDS = 30 V VGS = 10 V
V GS Gate-to-Source Voltage (V)

8 ID = 3.5 A ID = 3.5 A
r DS(on) On-Resistance (
)

1.5
(Normalized)

1.0

0.5
2

0 0
0 4 8 12 16 20 50 25 0 25 50 75 100 125 150 175

Qg Total Gate Charge (nC) TJ Junction Temperature (C)

Document Number: 70742 www.vishay.com
FaxBack 408-970-5600

S-99445Rev. C, 29-Nov-99 2-3
Si9407AEY
Vishay Siliconix

 
       

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

30 0.20

r DS(on) On-Resistance ( W )
0.15
I S Source Current (A)

10 TJ = 175C

ID = 3.5 A
TJ = 25C
0.10

0.05

0 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10

VSD Source-to-Drain Voltage (V) VGS Gate-to-Source Voltage (V)

Threshold Voltage Single Pulse Power

0.8 50

0.6
40
V GS(th) Variance (V)

0.4
ID = 250 mA 30
Power (W)

0.2

20
0.0

10
0.2

0.4 0
50 25 0 25 50 75 100 125 150 175 0.01 0.1 1 10

TJ Temperature (C) Time (sec)

Normalized Thermal Transient Impedance, Junction-to-Ambient

2

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2
Notes:
0.1
0.1 PDM
0.05
t1
t2
t1
0.02 1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 50C/W

Single Pulse 3. TJM TA = PDMZthJA(t)

4. Surface Mounted
0.01
104 103 102 101 1 10 30

Square Wave Pulse Duration (sec)

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2-4 S-99445Rev. C, 29-Nov-99