SOT223 PNP SILICON PLANAR

FZT753 MEDIUM POWER TRANSISTOR FZT753

ISSUE 4 FEBRUARY 1996
FEATURES
TYPICAL CHARACTERISTICS * Low saturation voltage C
* Excellent hFE specified up to 2A
0.6 td
IB1=IB2 =IC /10
tr

E
tf ts
0.5 ns ns
- (Volts)

140

COMPLEMENTARY TYPE FZT653

1400

Switching time
0.4
IC /IB=10 120 1200
C
100 1000
td
B
PARTMARKING DETAIL FZT753
0.3
ts
80 800
tf

0.2 tr
ABSOLUTE MAXIMUM RATINGS.
V

60 600

40 400

0.1
20 200
PARAMETER SYMBOL VALUE UNIT
0
0.0001 0.001 0.01 0.1 1 10
0 0
0.1 1
Collector-Base Voltage VCBO -120 V
Collector-Emitter Voltage VCEO -100 V
IC - Collector Current (Amps) IC - Collector Current (Amps) Emitter-Base Voltage VEBO -5 V
VCE(sat) v IC Switching Speeds Peak Pulse Current ICM -6 A
Continuous Collector Current IC -2 A
Power Dissipation at Tamb=25C Ptot 2 W
1.4

Operating and Storage Temperature Range Tj:Tstg -55 to +150 C

225

ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).

- (Volts)

1.2

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

- Gain

175
VCE =2V
1.0 IC /IB =10

Collector-Base V(BR)CBO -120 V IC=-100A

125
Breakdown Voltage
h

0.8

75
Collector-Emitter V(BR)CEO -100 V IC=-10mA*
Breakdown Voltage
0.6
0 Emitter-Base Breakdown V(BR)EBO -5 V IE=-100A
0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 Voltage
Collector Cut-Off Current ICBO -0.1 A VCB=-100V
IC - Collector Current (Amps) IC - Collector Current (Amps) -10 A VCB=-100V,Tamb=100C
hFE v IC VBE(sat) v IC Emitter Cut-Off Current IEBO -0.1 A VEB=-4V
Collector-Emitter VCE(sat) -0.17 -0.3 V IC=-1A, IB=-100mA*
10
Single Pulse Test at Tamb=25C Saturation Voltage -0.30 -0.5 V IC=-2A, IB=-200mA*
Base-Emitter VBE(sat) -0.9 -1.25 V IC=-1A, IB=-100mA*
Saturation Voltage
I - Collector Current (A)

1.2

Base-Emitter VBE(on) -0.8 -1.0 V IC=-1A, VCE=-2V*

Turn-On Voltage
1
1.0
- (Volts)

VC E=2V

Static Forward Current hFE 70 200 IC=-50mA, VCE =-2V*

0.8 DC Transfer Ratio 100 200 300 IC=-500mA, VCE =-2V*
0.1
100ms
1s
55 170 IC=-1A, VCE =-2V*
25 55 IC=-2A, VCE =-2V*
V

10ms
0.6
1ms

C
100 s
Transition Frequency fT 100 140 MHz IC=-100mA, VCE=-5V
0.4 0.01 f=100MHz
0.0001 0.001 0.01 0.1 1 10
0.1 1 10 100
Output Capacitance Cobo 30 pF VCB =-10V f=1MHz
Switching Times ton 40 ns IC=-500mA, VCC =-10V
IC - Collector Current (Amps) VCE - Collector Emitter Voltage (V) IB1=IB2=-50mA
toff 600 ns
VBE(on) v IC Safe Operating Area *Measured under pulsed conditions. Pulse Width=300s. Duty cycle 2%
Spice parameter data is available upon request for this device

3 - 237 3 - 236
 SOT223 PNP SILICON PLANAR
FZT753 MEDIUM POWER TRANSISTOR FZT753
ISSUE 4 FEBRUARY 1996
FEATURES
TYPICAL CHARACTERISTICS * Low saturation voltage C
* Excellent hFE specified up to 2A
0.6 td
IB1=IB2 =IC /10
tr

E
tf ts
0.5 ns ns
- (Volts)

140

COMPLEMENTARY TYPE FZT653

1400

Switching time
0.4
IC /IB=10 120 1200
C
100 1000
td
B
PARTMARKING DETAIL FZT753
0.3
ts
80 800
tf

0.2 tr
ABSOLUTE MAXIMUM RATINGS.
V

60 600

40 400

0.1
20 200
PARAMETER SYMBOL VALUE UNIT
0
0.0001 0.001 0.01 0.1 1 10
0 0
0.1 1
Collector-Base Voltage VCBO -120 V
Collector-Emitter Voltage VCEO -100 V
IC - Collector Current (Amps) IC - Collector Current (Amps) Emitter-Base Voltage VEBO -5 V
VCE(sat) v IC Switching Speeds Peak Pulse Current ICM -6 A
Continuous Collector Current IC -2 A
Power Dissipation at Tamb=25C Ptot 2 W
1.4

Operating and Storage Temperature Range Tj:Tstg -55 to +150 C

225

ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).

- (Volts)

1.2

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

- Gain

175
VCE =2V
1.0 IC /IB =10

Collector-Base V(BR)CBO -120 V IC=-100A

125
Breakdown Voltage
h

0.8

75
Collector-Emitter V(BR)CEO -100 V IC=-10mA*
Breakdown Voltage
0.6
0 Emitter-Base Breakdown V(BR)EBO -5 V IE=-100A
0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 Voltage
Collector Cut-Off Current ICBO -0.1 A VCB=-100V
IC - Collector Current (Amps) IC - Collector Current (Amps) -10 A VCB=-100V,Tamb=100C
hFE v IC VBE(sat) v IC Emitter Cut-Off Current IEBO -0.1 A VEB=-4V
Collector-Emitter VCE(sat) -0.17 -0.3 V IC=-1A, IB=-100mA*
10
Single Pulse Test at Tamb=25C Saturation Voltage -0.30 -0.5 V IC=-2A, IB=-200mA*
Base-Emitter VBE(sat) -0.9 -1.25 V IC=-1A, IB=-100mA*
Saturation Voltage
I - Collector Current (A)

1.2

Base-Emitter VBE(on) -0.8 -1.0 V IC=-1A, VCE=-2V*

Turn-On Voltage
1
1.0
- (Volts)

VC E=2V

Static Forward Current hFE 70 200 IC=-50mA, VCE =-2V*

0.8 DC Transfer Ratio 100 200 300 IC=-500mA, VCE =-2V*
0.1
100ms
1s
55 170 IC=-1A, VCE =-2V*
25 55 IC=-2A, VCE =-2V*
V

10ms
0.6
1ms

C
100 s
Transition Frequency fT 100 140 MHz IC=-100mA, VCE=-5V
0.4 0.01 f=100MHz
0.0001 0.001 0.01 0.1 1 10
0.1 1 10 100
Output Capacitance Cobo 30 pF VCB =-10V f=1MHz
Switching Times ton 40 ns IC=-500mA, VCC =-10V
IC - Collector Current (Amps) VCE - Collector Emitter Voltage (V) IB1=IB2=-50mA
toff 600 ns
VBE(on) v IC Safe Operating Area *Measured under pulsed conditions. Pulse Width=300s. Duty cycle 2%
Spice parameter data is available upon request for this device

3 - 237 3 - 236