Si2301DS

Vishay Siliconix

P-Channel 1.25-W, 2.5-V MOSFET

PRODUCT SUMMARY
VDS (V) rDS(on) (W) ID (A)
0.130 @ VGS = - 4.5 V - 2.3
- 20
0.190 @ VGS = - 2.5 V - 1.9

TO-236
(SOT-23)

G 1

3 D Ordering Information: Si2301DS-T1

S 2

Top View
Si2301DS (A1)*
*Marking Code

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Limit Unit
Drain-Source Voltage VDS - 20
V
Gate-Source Voltage VGS "8
TA= 25_C - 2.3
Continuous Drain Current (TJ = 150_C)b ID
TA= 70_C - 1.5
A
Pulsed Drain Currenta IDM - 10
Continuous Source Current (Diode Conduction)b IS - 1.6
TA= 25_C 1.25
Power Dissipationb PD W
TA= 70_C 0.8
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 _C

THERMAL RESISTANCE RATINGS

Parameter Symbol Limit Unit

Maximum Junction-to-Ambientb 100

RthJA _C/W
Maximum Junction-to-Ambientc 166

Notes
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board, t v 5 sec.
c. Surface Mounted on FR4 Board.

For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm

Document Number: 70627 www.vishay.com

S-31990Rev. E, 13-Oct-03 1
Si2301DS
Vishay Siliconix

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Limits

Parameter Symbol Test Conditions Min Typ Max Unit

Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = - 250 mA - 20
V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = - 250 mA - 0.45

Gate-Body Leakage IGSS VDS = 0 V, VGS = "8 V "100 nA

VDS = - 20 V, VGS = 0 V -1
Zero Gate Voltage Drain Current IDSS mA
VDS = - 20 V, VGS = 0 V, TJ = 55_C - 10

VDS v - 5 V, VGS = - 4.5 V -6

On State Drain Currenta
On-State ID(on)
D( ) A
VDS v - 5 V, VGS = - 2.5 V -3

VGS = - 4.5 V, ID = - 2.8 A 0.105 0.130

On Resistancea
Drain Source On-Resistance
Drain-Source rDS(on)
DS( ) W
VGS = - 2.5 V, ID = - 2.0 A 0.145 0.190

Forward Transconductancea gfs VDS = - 5 V, ID = - 2.8 A 6.5 S

Diode Forward Voltage VSD IS = - 1.6 A, VGS = 0 V - 0.80 - 1.2 V

Dynamicb
Total Gate Charge Qg 5.8 10

Gate-Source Charge Qgs VDS = - 6 V, VGS = - 4.5 V 0.85 nC

ID ^ - 2.8 A
Gate-Drain Charge Qgd 1.70

Input Capacitance Ciss 415

Output Capacitance Coss VDS = - 6 V, VGS = 0, f = 1 MHz 223 pF

Reverse Transfer Capacitance Crss 87

Switchingc
td(on) 13.0 25
Turn On Time
Turn-On
tr VDD = - 6 V, RL = 6 W 36.0 60
ID ^ - 1.0
10A A, VGEN = - 4.5
45V ns
td(off) RG = 6 W 42 70
Turn-Off Time
tf 34 60

Notes
a. Pulse test: PW v300 ms duty cycle v2%.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.

www.vishay.com Document Number: 70627

2 S-31990Rev. E, 13-Oct-03
 Si2301DS
Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Output Characteristics Transfer Characteristics
10 10
VGS = 5, 4.5, 4, 3.5, 3 V
2.5 V TC = - 55_C
8 8
I D - Drain Current (A)

I D - Drain Current (A)

25_C
6 6
125_C

2V
4 4

2 0, 0.5, 1 V 2
1.5 V

0 0
0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0

VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current Capacitance

0.6 1000

0.5
800
r DS(on)- On-Resistance ( W )

C - Capacitance (pF)

0.4
600

0.3 Ciss
VGS = 2.5 V
400
0.2 Coss
VGS = 4.5 V Crss
200
0.1

0.0 0
0 2 4 6 8 10 0 3 6 9 12

ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)

Gate Charge On-Resistance vs. Junction Temperature

5 1.8
VDS = 6 V VGS = 4.5 V
ID = 2.8 A ID = 2.8 A
1.6
4
V GS - Gate-to-Source Voltage (V)

r DS(on)- On-Resistance ( W )

1.4
3
(Normalized)

1.2

2
1.0

1
0.8

0 0.6
0 2 4 6 8 - 50 0 50 100 150

Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C)

Document Number: 70627 www.vishay.com

S-31990Rev. E, 13-Oct-03 3
Si2301DS
Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
10 0.6

0.5

r DS(on)- On-Resistance ( W )
I S - Source Current (A)

0.4
TJ = 150_C

0.3 ID = 2.8 A

TJ = 25_C
0.2

0.1

1 0.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 2 4 6 8

VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)

Threshold Voltage Single Pulse Power

0.4 14

0.3 12

10
0.2
VGS(th) Variance (V)

ID = 250 mA
Power (W)

8
0.1 TC = 25_C
Single Pulse
6

0.0
4

- 0.1
2

- 0.2 0
- 50 0 50 100 150 0.01 0.10 1.00 10.00

TJ - Temperature (_C) Time (sec)

Normalized Thermal Transient Impedance, Junction-to-Ambient

2

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2

0.1
0.1

0.05

0.02

Single Pulse
0.01
10 -4 10 -3 10 -2 10 -1 1 10 30

Square Wave Pulse Duration (sec)

www.vishay.com Document Number: 70627

4 S-31990Rev. E, 13-Oct-03
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Revision: 18-Jul-08 1