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High voltage pulser with a fast fall-time for plasma immersion ion
implantation
Zongtao Zhu,1 Chunzhi Gong,1 Xiubo Tian,1,a) Shiqin Yang,1 Ricky K. Y. Fu,2 and
Paul K. Chu2
1
State Key Laboratory of Advanced Welding Production and Technology, School of Materials Science
and Engineering, Harbin Institute of Technology, Harbin 150001, China
2
Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue,
Kowloon, Hong Kong
(Received 22 February 2011; accepted 17 March 2011; published online 6 April 2011)
A novel high voltage (HV) modulator that offers a short fall time to minimize sputtering effects
and allow more precise control of the incident ion fluence in plasma immersion ion implantation is
described. The use of 36 insulated-gate bipolar transistors in the 30 kV hard-tube pulser reduces the
HV fall time to 3.5 s, compared to a fall time of 80 s if a pull-down resister is used. The voltage
balance is achieved by a voltage-balancing resistor, clamped capacitance, and the synchronization of
drive signals. Compared to the traditional method employing a pull-down resister or an additional
hard tube, our design consumes less power and is more economical and reliable. 2011 American
Institute of Physics. [doi:10.1063/1.3575320]
I. INTRODUCTION increases the cost of the pulse generator and requires more
complex control circuits.
In plasma immersion ion implantation (PIII),1, 2 ions gen-
In this paper, we describe a novel circuitry to shorten the
erated by external gas or metal plasma sources3 are implanted
fall time using insulated-gate bipolar transistors (IGBT) in
into the samples immersed in the plasma when negative high
series as a tail reducing switch inspired by IGBT-based PIII
voltage pulses are applied to the sample stage. The process
modulator.14 The design combines hard tubes with IGBTs to
circumvents the line-of-sight restriction that plagues conven-
pare costs and to reduce technical difficulty while increasing
tional beam-line ion implantation and is often utilized to treat
flexibility and reliability. A tetrode is utilized to switch the
specimens with a complex shape.4, 5 The high voltage mod-
high voltage, and after the tetrode is turned off, the IGBTs
ulator is thus an important piece of hardware in PIII.6, 7 A
connected in series are turned on synchronously to rapidly
modulator that can produce high voltage pulses with a rectan-
discharge the equivalent capacitance. This leads to a short fall
gular shape is preferred for conformal ion implantation into a
time and low energy consumption compared to the use of a
three-dimensional sample around which a transient ion sheath
pull-down resistor. This proposed tail reducing switch which
is generated. Nevertheless, the practical output voltage wave-
is cheaper than a hard tube switch can be retrofitted to upgrade
form usually contains a short rise time of about 0.52 s and
an existing high voltage pulser.
a long fall time of several tens of microseconds due to the
capacitance effect of the cables, circuit elements, and plasma
load. This leads to detrimental sputtering effect due to lower II. HIGH VOLTAGE MODULATOR
implantation energy at the end of the voltage pulse. It has A. Main power circuit
been reported that 96% of the low-energy ions are introduced
during the rise-time and fall-time periods.8 The rise time de- The high voltage is modulated by a tetrode using a
pends mainly on the circuit design but the fall time is affected typical circuit as shown in Fig. 1(a).7, 15 A variable dc high
by multiple variables such as the external plasma load, ca- voltage power supply charges energy storage capacitor C1
ble length, and so on.9, 10 It is generally difficult to change through resistor R1 and diode D1 . The tetrode SW1 is utilized
the plasma load which is dictated by the processing param- as the main switch to discharge capacitor C1 through resistor
eters. The fall time may be shortened by using a pull-down R2 , inductor L1 , and the load. This is equivalent to a parallel
resistor parallel to the plasma load. However, the large energy connection of capacitor CL and resistor RL . CC is the sum
consumption by the pull-down resistor cannot be ignored, es- of the internal and the cable capacitances. To obtain a short
pecially for high bias voltages and long duty cycles.11 An- fall time, IGBTs connected in series, SW2 , are used as a tail
other technique is to add a high voltage switch such as a tri- reducing switch. When the switch SW1 is turned off, switch
ode or tetrode. This may effectively discharge the plasma-load SW2 will be triggered on to discharge the capacitors CC and
capacitance to ground after the high voltage pulse is turned CR through resistor Rp and inductor L2 used to limit the peak
off.12, 13 However, addition of the second high voltage switch discharge current.
IV. CONCLUSION
A high voltage PIII pulser combining hard tubes and
IGBTs is described. A small fall time can be achieved from
the HV pulses using 36 IGBTs connected in series to dis-
charge the equivalent capacitance arising from the cable and
plasma load. The PSPICE simulation demonstrates that volt-
age balancing can be accomplished via resistors and snubber
circuits in spite of asynchronous 200 ns drive signals. Using
36 IGBTs with relatively low ratings, the long tail of the HV
pulse (30 kV) can be effectively clipped. The rise time of the
HV pulse is not affected by the IGBT setup whereas the fall
FIG. 7. Output waveforms of the HV pulser with different pulse widths on
plasma load: (a) with pull-down resistor of 24 k; (b) with tail reducing time can be reduced to 45 s irrespective of the plasma load
circuit. and it may be further shortened. The novel modulator enables
precise control of the ion fluence, while sputtering can be sig-
nificantly mitigated. Compared to the traditional use of a pull-
voltage Vm applied to the probe is +5 V and the mea-
down resistor or an additional hard tube, our design is less
surement resistor Rm is 100 . The initial current flow-
energy consuming and more economical and reliable.
ing through the probe is about 3040 mA without turn-
ing on the negative high voltage. As soon as the HV pulse
(10 kV with pulse width of 20 s) is applied to the sub- ACKNOWLEDGMENTS
strate holder, the plasma sheath forms and propagates quickly. This work was financially supported by Natural Science
The current diminishes rapidly to zero because there are no Foundation of China (Nos. 50773015 and 10775036), Pro-
electrons in the sheath. If the IGBT tail reducing circuit is gram for New Century Excellent Talents in University in
not used, the plasma sheath does not recover fully until after China, and Hong Kong Research Grants Council (RGC) Cen-
200 s even though the HV pulse (10 s) has ended much tral Allocation Equipment (Grant No. CityU 1/06C).
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