Professional Documents
Culture Documents
3, 1976
Translated from Denki Cakkai Ronbunrhi, Vol. %B, No. 5, May 1976, pp. 243-250
S U M 1 0 KOBAYASHI
Tokyo Shibaura Electric Co. ,W.
50
First, let us calculate the turn-off overvoltages
of valve o when the thyristor current is being com-
mutated from valve 3 to valve 3 and valve @ is
conducting. A l l the nonconducting valves are
represented by CG' (= CG/n), RG' (= n*RG), C D
and RD and the anode reactors connected to non-
conducting valves are neglected. The commutat-
ing reactance, the capacitance to ground of trans-
former per phase and the capacitance to ground
of dc reactor DCL are denoted by Lt, C t and COO,
Fig. 1. Recovery current of thyristor. respectively. The equivalent circuit used for the
analysis is shown in Fig. 5, where E, 0 , U and
w denote the peak value of line voltage on the sec-
ondary side of transformer T r , control angle,
commutation overlap angle and angular frequency,
respectively. The equivalent circuit of valve 9 is
enclosed with a dot-dashed line and (Rl, 111, (R2,
121,... , (Rn, In) represent the series-connected
(a) (b) thyristors. Denoting the decay time constants of
recovery currents of thyristors 1to n by l / n ,
Fig. 2. Equivalent circuit for thyristor turn-off. 1/72, ... , 1/7n, we obtain the following circuit
equations :
I I
I 1
I
Recovery current
of thyristor
O$t<tI I R=RoN I I=O I i.
td,
51
the initial conditions such that
lC0
Fig. 3. Circuit diagram of typical thyristor valve.
To integrate current il, for instance, we set R1
=~
tively.
F = rFand 11 = il(exp (ti-t) 7-1) when the
integral of il has reached QSl at t = ti. A simi-
lar procedure is applied to currents 12 to in and
we continue this process until all the thyristors
turn off. The terminal voltages of thyristors 1t o
...,
n a r e g i v e n b y r - i r , roi2, r * i n , respec-
52
L
- ..
s
Fig. 6 . Test circuit for commutation.
-30
Meamred EIPV~
Calculated awe
QS1'=QS1 + Q
i r l e x p [ ( t l - t ) . ~d ]t
(16)
When the two thyristors are connected in
=QSl+'"
TI series, the storage charge of thyristor 1 reaches
QSl at t = ti and immediately its recovery cur-
Sirnilarb, for thyristor 2, we have rent begim to decay. Thus it operates as a
series impedance for thyristor 2 and therefore
the recovery current of thyristor 2 is limited aa
QSZ'=QSZ+'r (17)
rZ shown by the dotted curve in Fig. 16. The
53
Valve capacity: 2000 k W (2000-1000 A), con&
nection: three-phase bridge, frequency: 50 Hz,
secondary line voltage of transformer: 2000 V
transformer impedance: 15%, number of series-
connected thyristors of each valve: 3 (QS1 = 250
pC, QS) = 500 pC, QS3 = 750 pC, 1/71 = 1/72
= 1/13 = 30 pa).
storage charge of thyristor 2 reaches QS2 and The model valve satisfies this condition. The cal-
the recovery current reaches id1at t = t2'. The culated voltage distribution for t = tm is com-
storage charge of series-connected thyristor 2 pared with the measured one in Fig. 14. Curves
becomes equal to in this figure indicate that the voltage distribution
of series-connected thyristors becomes very uni-
form due to the balancing effect of storage charge.
Effects of CG and RG on Avn(t) and Avn' are
which is smaller than that of thyristor 2 itself by illustrated in Fig. 15. The initial jump of AVn(t)
increases as RG increases. While Avn' satisfies
Eq. (20) and is inversely proportional to CG,
A Q S ' decreases as RG increases as shown in
Fig. 12. On the basis of the above discussion,
The storage charge of this quantity vanishes due we can make the following conclusions.
to the recombination inside the junction, The
value of ielvaries with the properties of series- *
(1) If tm 1/71, Eq. (22)holds and, them-
connected thyristors and constants of voltage fore, we should let RG be large in order to utilize
grading circuit. To study these effects, let us the balancing effect of storage charge AQW most
consider the following example: effectively.
54
E l
55
Fig. 19. Relation between valve turn-off overvolt-
age and anode reactance.
QS=k.(S)"
Fig. 18. Relation between valve turn-off over- (2) The unbalance of turn-off overvoltage
voltage and rate of decay of recovery current. among series-connected thyristors is the largest
just after the turn-off and it approaches the
steady-state unbalance value with the same time
3.2 Relation between valve turn-off overvolt- constant as the recovery current.
age, recovery current and circuit con-
Stants (3) The valve turn-off overvoltage is greatly
dependent on the recovery currents of ssries-
As pointed out in the previous section, we can connected thyristors. The effect of recovery cur-
replace the series-connected thyristors by a rent unbalance among series-connected thyristors
single equivalent thyristor in calculating the valve is negligible.
turn-off overvoltage. Therefore, we can use the
analytical results of a valve consisting of a single (4) The valve turn-off overvoltage can be regu-
thyristor [l-51. The relation between valve turn- lated effectively by choosing RD, CD and anode
off overvoltage and storage charge, which is cal-
culated by representing the valve by a single
.
r e actor properly
thyristor, is illustrated in Fig. 17. The effect (5) Both the voltage distribution and the turn-
of recovery current decay constant on the valve off overvoltage are greatly dependent on the re-
turn-off overvoltage is also illustrated in Fig. covery current characteristics of each thyristor.
18. All the curves in Figs. 17 and 18 indicate Therefore, we should test the recovery charac-
that the valve turn-off overvoltage can be sup- teristics of each thyristor before assigning the
pressed very effectively by designing the RD-CD voltage grading circuit constants.
56
Acknowledgement 7. B.J. Cory. HVDC Converter and Systems,
p. 137.
The author thanks Mr. Tsukiji, director, and 8. G. Karady and T. Gilsig. IEEE Tr. paper
Mr. Yamamoto, acting director, both of heavy 71, Tp642-PWR, 1971.
current laboratory of Tokyo Shibaura Electric 9. Imai et al. Toshiba Review, Vol. 28, p.
Co. for their constant guidance. He also thanks 873, Aug. 1973.
Mr. Yamaguchi, Mr. Takahashi, Mr. Tanabe, 10. Kobayashi and Takahashi. 1972 Nat'l Conv.
Mr. 1ma.i and Mr. Matsushita for their valuable Inst. Elec. Engrs., Japan, No. 552.
comments on this work. 11. Yamaguchi et al. 1974 Nat'l Conv. Inst.
.
Elec. E n g r s , Japan, No. 792.
12. Ammo and Koshiba. Jour. I.E. E., Japan,
RE FE RENCES Vol. 84, p. 125, Oct. 1964.
13. Yamaguchi, Kobayashi and Takahashi. 1971
1. K. Samberger. ETZ-A, Vol. 86, No. 24, Tokyo Branch Conv. Inst. Elec. Engrs.,
p. 781, 1965. Japan, No. 275.
2. G. Thile. ETZ-A, Vol. 90, No. 14, p. 347,
1969.
3. GUnter GLllz, Lampertheim. BBC Nachrich-
tenMflrtz, p. 129, 1968.
4. Hano Christoph Skudelny, Mannheim. BBC-
Nachrichten, Januar, p. 21, 1968.
5. William McMurray. IEEE Trans. Paper
TOD-72-21, 1971.
6. Sawada, Matsushita and Fujiwara. Trans.
I.E.E., Japan, Vol. 92-B, p. 119, Feb. Submitted March 10, 1975;
1972. resubmitted November 25, 1975
57