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July 2013
FGH40T120SMD / FGH40T120SMD_F155
1200 V, 40 A FS Trench IGBT
Features General Description
FS Trench Technology, Positive Temperature Coefficient Using innovative field stop trench IGBT technology, Fairchilds
High Speed Switching new series of field stop trench IGBTs offer the optimum
Low Saturation Voltage: VCE(sat) =1.8 V @ IC = 40 A performance for hard switching application such as solar
100% of the Parts tested for ILM(1) inverter, UPS, welder and PFC applications.
High Input Impedance
RoHS Compliant
Applications
Solar Inverter, Welder, UPS & PFC applications.
E C
C
G
G
COLLECTOR
(FLANGE)
E
Thermal Characteristics
Symbol Parameter Typ. Max. Unit
o
RJC(IGBT) Thermal Resistance, Junction to Case -- 0.27 C/W
o
RJC(Diode) Thermal Resistance, Junction to Case -- 0.89 C/W
o
RJA Thermal Resistance, Junction to Ambient -- 40 C/W
Notes:
1. Vcc = 600 V,VGE = 15 V, IC = 160 A, RG = 10 , Inductive Load
2. Limited by Tjmax
Off Characteristics
BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 uA 1200 - - V
ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 uA
IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - 400 nA
On Characteristics
VGE(th) G-E Threshold Voltage IC = 40 mA, VCE = VGE 4.9 6.2 7.5 V
IC = 40 A, VGE = 15 V
- 1.8 2.4 V
TC = 25oC
VCE(sat) Collector to Emitter Saturation Voltage
IC = 40 A, VGE = 15 V,
TC = 175oC - 2.0 - V
Dynamic Characteristics
Cies Input Capacitance - 4300 - pF
VCE = 30 V, VGE = 0 V,
Coes Output Capacitance - 180 - pF
f = 1MHz
Cres Reverse Transfer Capacitance - 100 - pF
Switching Characcteristics
td(on) Turn-On Delay Time - 40 - ns
tr Rise Time - 47 - ns
td(off) Turn-Off Delay Time VCC = 600 V, IC = 40 A, - 475 - ns
tf Fall Time RG = 10 , VGE = 15 V, - 10 - ns
Inductive Load, TC = 25oC
Eon Turn-On Switching Loss - 2.7 - mJ
Eoff Turn-Off Switching Loss - 1.1 - mJ
Ets Total Switching Loss - 3.8 - mJ
td(on) Turn-On Delay Time - 40 - ns
tr Rise Time - 55 - ns
td(off) Turn-Off Delay Time VCC = 600 V, IC = 40 A, - 520 - ns
tf Fall Time RG = 10 , VGE = 15 V, - 50 - ns
Inductive Load, TC = 175oC
Eon Turn-On Switching Loss - 3.4 - mJ
Eoff Turn-Off Switching Loss - 2.5 - mJ
Ets Total Switching Loss - 5.9 - mJ
Qg Total Gate Charge - 370 - nC
VCE = 600 V, IC = 40 A,
Qge Gate to Emitter Charge - 23 - nC
VGE = 15 V
Qgc Gate to Collector Charge - 210 - nC
200 200
12V
150 150
12V
100 100
VGE=10V VGE=10V
50 50
0 0
0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10
Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V]
120 o
TC = 175 C ---
3
80A
80
40A
2
40
IC=20A
0 1
0 1 2 3 4 5 25 50 75 100 125 150 175
o
Collector-Emitter Voltage, VCE [V] Case Temperature TC [ C]
Figure 5. Saturation Voltage vs. VGE Figure 6. Saturation Voltage vs. VGE
20 20
Common Emitter Common Emitter
o o
Collector Emitter Voltage, VCE [V]
TC = 25 C TC = 175 C
16 16
80A
80A
12 12
40A
40A
8 8
IC=20A
IC=20A
4 4
0 0
0 4 8 12 16 20 0 4 8 12 16 20
Gate-Emitter Voltage, VGE [V] Gate-Emitter Voltage, VGE [V]
4000
120 o
TC = 100 C
3000
80
2000
Coss
40 Duty cycle : 50%
1000 Crss T = 100 C
o
C
Powe Dissipation = 277 W
0
1 10 1k 10k 100k 1M
Collector-Emitter Voltage, VCE [V] Switching Frequency, f [Hz]
1000
tr
Switching Time [ns]
td(off)
100
Switching Time [ns]
100
td(on)
tf
Common Emitter
10
VCC = 600V, VGE = 15V
10
IC = 40A
Common Emitter
o
TC = 25 C VCC = 600V, VGE = 15V, IC = 40A
o o o
TC = 175 C TC = 25 C , TC = 175 C
1 1
0 10 20 30 40 50 0 10 20 30 40 50 60 70
Gate Resistance, RG []
Gate Resistance, RG []
Figure 11. Swithcing Loss vs. Figure 12. Turn-on Characteristics vs.
Gate Resistance Collector Current
tr
10
Eon
100
Switching Loss [mJ]
Eoff
td(on)
1
Common Emitter
VCC = 600V, VGE = 15V
Common Emitter
IC = 40A VGE = 15V, RG = 10
o o
TC = 25 C TC = 25 C
0.1 10
o o
TC = 175 C TC = 175 C
0 10 20 30 40 50 60 70 10 20 30 40 50 60 70 80
Gate Resistance, RG [] Collector Current, IC [A]
Figure 13. Turn-off Characteristics vs. Figure 14. Swithcing Loss vs.
Collector Current Collector Current
1000 30
td(off) 10 Eon
Switching Time [ns]
1
tf
10 Common Emitter
VGE = 15V, RG = 10
Common Emitter o
TC = 25 C
VGE = 15V, RG = 10 o
o o TC = 175 C
TC = 25 C , TC = 175 C
1 0.1
20 40 60 80 10 20 30 40 50 60 70 80
Collector Current, IC [A] Collector Current, IC [A]
15
IcMAX (Pulsed)
100
10s
12
Gate Emitter Voltage, VGE [V]
1
6
Single Nonrepetitive
o
0.1 Pulse Tc = 25 C
3 Curves must be derated
Common Emitter
o
linearly with increase
TC = 25 C in temperature
0 0.01
0 50 100 150 200 250 300 350 400 0.1 1 10 100 1000
Gate Charge, Qg [nC] Collector-Emitter Voltage, VCE [V]
10
Reverse Recovery Currnet, Irr [A]
10
4
o
TC = 25 C VR = 600 V, IF = 40 A
2 o
o
TC = 175 C --- TC = 25 C
1
0 1 2 3 4 5 0 10 20 30 40 50 60 70 80
Forward Voltage, VF [V] Foward Current, IF [A]
100 400
VR = 600 V, IF = 40 A
o
TC = 25 C
90
300
diF/dt = 200 A/s
80
200
diF/dt = 100 A/s
diF/dt = 100 A/s
70
100
60 diF/dt = 200 A/s
VR = 600 V, IF = 40 A
o
TC = 25 C
50 0
0 10 20 30 40 50 60 70 80 0 10 20 30 40 50 60 70 80
Forward Current, IF [A] Forwad Current, IF [A]
1
Thermal Response [Zthjc]
0.5
0.1
0.3
0.1
PDM
0.01 0.05
t1
t2
0.02
Duty Factor, D = t1/t2
0.01 single pulse Peak Tj = Pdm x Zthjc + TC
1E-3
1E-6 1E-5 1E-4 1E-3 0.01 0.1 1
Rectangular Pulse Duration [sec]
TO - 247A03
TO-247G03
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