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03/03/2016

TRANSISTOR

Herman Budi Harja S.T.,M.T.


MEKATRONIKA 1
TEKNIK MESIN UNJANI

Materi
Konstruksi
Prinsip Kerja dan Karakteristik
Penerapan

Konstruksi Transisitor
two polarities:
npn and pnp

Base

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Basic Model
npn transistor

Diode

Diode

pnp transistor

Diode

Diode

Pnp Npn

Analogi

force voltage/current
water flow current
- amplification

Understanding of BJT

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View Komponen

Heat sink

Pemeriksaan Transisitor

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Control Device

Currents

Hubungan arus yang terjadi pada Collector dan Base


adalah:
characteristic is
approximately linear
magnitude of collector
current is generally
many times that of the
base current
the device provides
current gain

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Conventional View

Transistor Operation

We will consider npn transistors


pnp devices are similar but with different polarities of voltage
and currents
when using npn transistors
collector is normally more positive than the emitter
VCE might be a few volts
device resembles two back-to-back diodes but has very different
characteristics
with the base open-circuit negligible current flows from the collector
to the emitter

Now consider what happens when a positive voltage


is applied to the base (with respect to the emitter)
this forward biases the base-emitter junction
the base region is light doped and very thin
because it is likely doped, the current produced is
mainly electrons flowing from the emitter to the base
because the base region is thin, most of the electrons entering the
base get swept across the base-collector junction into the
collector
this produces a collector current that is much larger than the
base current this gives current amplification

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Transistor action

Characteristics

Behaviour can be described by the current gain, hfe or


by the transconductance, gm of the device

Transistor configurations
transistors can be used in a
number of configurations
most common is as shown
emitter terminal is common to
input and output circuits
this is a common-emitter
configuration
we will look at the characteristics
of the device in this configuration

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Input characteristics
the input takes the form of
a forward-biased pn
junction
the input characteristics
are therefore similar to
those of a semiconductor
diode

Output characteristics
region near to the
origin is the
saturation region
this is normally
avoided in linear
circuits
slope of lines
represents the
output resistance

Formulasi
can be described by either the current gain or by the
transconductance

DC current gain hFE or is given by IC / IB


AC current gain hfe is given by ic / ib

transconductance gm is given approximately by


gm 40IC 40 IE siemens

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Equivalent circuits for a bipolar transistor

Kesimpulan

Terdapat tiga kaki terminal pada transistor adalah :


collector, base and emitter
The base is the control input
Dua jenis polaritas: npn and pnp
IC = hFEIB
Ber_karakteristik sebagai penguat arus [transconductance]

Penerapan Transistor

transistor amplifier
R B is used to bias the
transistor by injecting an
appropriate base current
C is a coupling capacitor
and is used to couple the
AC signal while preventing
external circuits from
affecting the bias
this is an AC-coupled amplifier

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AC-coupled amplifier
VB is set by the conduction voltage of the base-emitter junction
and so is about 0.7 V
voltage across RB is thus VCC 0.7
IB = V / RB
IC = hFEIB
VRC = IC RC
the quiescent output voltage is therefore
Vo = VCC - IC RC
output is determined by hFE which is very variable

Negative feedback amplifiers

Contoh
Determine the
quiescent output
voltage of this
circuit

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Base current kecilnya , sehingga


R2 10 k
VB VCC 10 2. 7 V
R1 R2 27 k 10 k
Tegangan Emitor
VE = VB VBE = 2.7 0.7 = 2.0 V
Arus Emitor
VE 2.0 V
IE 2 mA
RE 1k
Karena IB bernilai kecil, Arus CollectorIC IE = 2 mA
Output voltage = VCC ICRC = 10 - 2 mA 2.2 k = 5.6 V

A common-collector amplifier
unity gain
high input resistance
low output resistance
a very good
buffer amplifier

Penerapan lainnya

A phase splitter

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Regulator tegangan

Switching

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