VS-ENQ030L120S

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Vishay Semiconductors
EMIPAK-1B PressFit Power Module
Neutral Point Clamp Topology, 30 A
FEATURES
Ultrafast Trench IGBT technology
HEXFRED and silicon carbide diode technology
PressFit pins technology
Exposed Al2O3 substrate with low thermal resistance
Low internal inductances
PressFit pins locking technology. Patent # US.263.820 B2

EMIPAK-1B
UL approved file E78996
(package example) Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

DESCRIPTION
PRODUCT SUMMARY
VS-ENQ030L120S is an integrated solution for a neutral
TRENCH IGBT 1200 V STAGE point clamp topology in a single package. The EMIPAK-1B
VCES 1200 V package is easy to use thanks to the PressFit pins and the
VCE(ON) typical at IC = 30 A 2.12 V exposed substrate provides improved thermal performance.
The optimized layout also helps to minimize stray
IC at TC = 102 C 30 A
parameters, allowing for better EMI performance.
TRENCH IGBT 600 V STAGE
VCES 600 V
VCE(ON) typical at IC = 30 A 1.42 V


IC at TC = 106 C 30 A
Speed 8 kHz to 30 kHz
Package EMIPAK-1B

Circuit 3-levels neutral point clamp topology

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Operating junction temperature TJ 150
C
Storage temperature range TStg -40 to +150
RMS isolation voltage VISOL TJ = 25 C, all terminals shorted, f = 50 Hz, t = 1 s 3500 V
Q1 - Q4 TRENCH IGBT 1200 V
Collector to emitter voltage VCES 1200
V
Gate to emitter voltage VGES 30
Pulsed collector current ICM 120
A
Clamped inductive load current ILM (1) 120
TC = 25 C 61
Continuous drain current IC TC = 80 C 40 A
TSINK = 80 C 21
TC = 25 C 216
Power dissipation PD W
TC = 80 C 121

PATENT(S): www.vishay.com/patents
This Vishay product is protected by one or more United States and International patents.

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ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Q2 - Q3 TRENCH IGBT 600 V
Collector to emitter voltage VCES 600
V
Gate to emitter voltage VGES 20
Pulsed collector current ICM 130
A
Clamped inductive load current ILM (2) 130
TC = 25 C 64
Continuous collector current IC TC = 80 C 42 A
TSINK = 80 C 25
TC = 25 C 174
Power dissipation PD W
TC = 80 C 97
D1 - D4 HEXFRED ANTIPARALLEL DIODE
Single pulse forward current IFSM 10 ms sine or 6 ms rectangular pulse, TJ = 25 C 180 A
TC = 25 C 46
Diode continuous forward current IF TC = 80 C 30 A
TSINK = 80 C 17
TC = 25 C 187
Power dissipation PD W
TC = 80 C 105
D2 - D3 SILICON CARBIDE ANTIPARALLEL DIODE
Single pulse forward current IFSM 10 ms sine or 6 ms rectangular pulse, TJ = 25 C 150 A
TC = 25 C 40
Diode continuous forward current IF TC = 80 C 28 A
TSINK = 80 C 20
TC = 25 C 140
Power dissipation PD W
TC = 80 C 79
Notes
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur.
CC = 600 V, VGE = 15 V, L = 500 H, Rg = 4.7 , TJ = 150 C
(1) V

CC = 300 V, VGE = 15 V, L = 500 H, Rg = 4.7 , TJ = 150 C

(2) V

ELECTRICAL SPECIFICATIONS (TJ = 25 C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Q1 - Q4 TRENCH IGBT 1200 V
Collector to emitter breakdown voltage BVCES VGE = 0 V, IC = 100 A 1200 - -
VGE = 15 V, IC = 30 A - 2.12 2.52
Collector to emitter voltage VCE(ON) V
VGE = 15 V, IC = 30 A, TJ = 125 C - 2.31 -
Gate threshold voltage VGE(th) VCE = VGE, IC = 1.0 mA 2.6 4.6 6.6
Temperature coefficient of threshold
VGE(th)/TJ VCE = VGE, IC = 1 mA (25 C to 125 C) - - 14 - mV/C
voltage
Forward transconductance gfe VCE = 20 V, IC = 30 A - 36 - S
Transfer characteristics VGE VCE = 20 V, IC = 30 A - 7.1 - V
VGE = 0 V, VCE = 1200 V - 0.001 0.23
Zero gate voltage collector current ICES mA
VGE = 0 V, VCE = 1200 V, TJ = 125 C - 0.5 -
Gate to emitter leakage current IGES VGE = 30 V, VCE = 0 V - - 200 nA

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ELECTRICAL SPECIFICATIONS (TJ = 25 C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Q2 - Q3 TRENCH IGBT 600 V
Collector to emitter breakdown voltage BVCES VGE = 0 V, IC = 150 A 600 - -
VGE = 15 V, IC = 30 A - 1.42 1.87
Collector to emitter voltage VCE(ON) V
VGE = 15 V, IC = 30 A, TJ = 125 C - 1.56 -
Gate threshold voltage VGE(th) VCE = VGE, IC = 1.4 mA 3.6 5.6 7.1
Temperature coefficient of threshold
VGE(th)/TJ VCE = VGE, IC = 1 mA (25 C to 125 C) - -17 - mV/C
voltage
Forward transconductance gfe VCE = 20 V, IC = 30 A - 24 - S
Transfer characteristics VGE VCE = 20 V, IC = 30 A - 10 - V
VGE = 0 V, VCE = 600 V - 0.0003 0.23
Zero gate voltage collector current ICES mA
VGE = 0 V, VCE = 600 V, TJ = 125 C - 0.028 -
Gate to emitter leakage current IGES VGE = 20 V, VCE = 0 V - - 200 nA
D1 - D4 ANTIPARALLEL DIODE
IF = 20 A - 2.42 3.18 V
Forward voltage drop VFM
IF = 20 A, TJ = 125 C - 2.32 -
D2 - D3 ANTIPARALLEL DIODE
IF = 20 A - 1.54 1.8
Forward voltage drop VFM V
IF = 20 A TJ = 125 C - 1.86 -

SWITCHING CHARACTERISTICS (TJ = 25 C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Q1 - Q4 TRENCH IGBT (WITH FREEWHEELING D1 - D4 ANTIPARALLEL DIODE)
Total gate charge (turn-on) Qg IC = 30 A - 157 -
Gate to emitter charge (turn-on) Qge VCC = 600 V - 21 - nC
Gate to collector charge (turn-on) Qgc VGE = 15 V - 69 -
Turn-on switching loss EON - 0.52 -
Turn-off switching loss EOFF - 0.9 - mJ
IC = 30 A
Total switching loss ETOT VCC = 600 V - 1.42 -
Turn-on delay time td(on) VGE = 15 V - 93 -
Rise time tr Rg = 4.7 - 39 -
L = 500 H (1) ns
Turn-off delay time td(off) - 133 -
Fall time tf - 156 -
Turn-on switching loss EON - 0.64 -
Turn-off switching loss EOFF IC = 30 A - 1.61 - mJ
Total switching loss ETOT VCC = 600 V 2.24
VGE = 15 V
Turn-on delay time td(on) - 93 -
Rg = 4.7
Rise time tr L = 500 H - 39 -
ns
Turn-off delay time td(off) TJ = 125 C (1) - 136 -
Fall time tf - 193 -
Input capacitance Cies VGE = 0 V - 3338 -
Output capacitance Coes VCC = 30 V - 124 - pF
Reverse transfer capacitance Cres f = 1 MHz - 75 -
TJ = 150 C, IC = 120 A, VCC = 600 V,
Reverse bias safe operating area RBSOA Fullsquare
VP = 1200 V, Rg = 4.7 , VGE = 15 V to 0 V

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SWITCHING CHARACTERISTICS (TJ = 25 C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Q2 - Q3 TRENCH IGBT (WITH FREEWHEELING EXTERNAL TO-247 DIODE DISCRETE 30ETH06)
Total gate charge (turn-on) Qg IC = 48 A - 95 -
Gate to emitter charge (turn-on) Qge VCC = 400 V - 28 - nC
Gate to collector charge (turn-on) Qgc VGE = 15 V - 35 -
Turn-on switching loss EON - 0.23 -
Turn-off switching loss EOFF - 0.26 - mJ
IC = 30 A
Total switching loss ETOT VCC = 300 V - 0.49 -
Turn-on delay time td(on) VGE = 15 V - 70 -
Rise time tr Rg = 4.7 - 31 -
L = 500 H (1) ns
Turn-off delay time td(off) - 91 -
Fall time tf - 87 -
Turn-on switching loss EON - 0.33 -
Turn-off switching loss EOFF IC = 30 A - 0.48 - mJ
Total switching loss ETOT VCC = 300 V - 0.61 -
VGE = 15 V
Turn-on delay time td(on) - 70 -
Rg = 4.7
Rise time tr L = 500 H - 31 -
ns
Turn-off delay time td(off) TJ = 125 C (1) - 96 -
Fall time tf - 117 -
Input capacitance Cies VGE = 0 V - 3025 -
Output capacitance Coes VCC = 30 V - 245 - pF
Reverse transfer capacitance Cres f = 1 MHz - 90 -
TJ = 150 C, IC = 130 A
Reverse bias safe operating area RBSOA VCC = 300 V, VP = 600 V Fullsquare
Rg = 4.7 , VGE = 15 V to 0 V
D1 - D4 ANTIPARALLEL DIODE
Diode reverse recovery time trr VR = 400 V - 103 - ns
Diode peak reverse current Irr IF = 20 A - 16 - A
Diode recovery charge Qrr dl/dt = 500 A/s - 800 - nC
Diode reverse recovery time trr VR = 400 V - 135 - ns
Diode peak reverse current Irr IF = 20 A - 21 - A
Diode recovery charge Qrr dl/dt = 500 A/s, TJ = 125 C - 1412 - nC
D2 - D3 ANTIPARALLEL DIODE
Diode reverse recovery time trr VR = 200 V - 30 - ns
Diode peak reverse current Irr IF = 20 A - 4.8 - A
Diode recovery charge Qrr dl/dt = 500 A/s - 73 - nC
Diode reverse recovery time trr VR = 200 V - 31 - ns
Diode peak reverse current Irr IF = 20 A - 5 - A
Diode recovery charge Qrr dl/dt = 500 A/s, TJ = 125 C - 78 - nC
Note
(1) Energy losses include tail and diode reverse recovery.

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INTERNAL NTC - THERMISTOR SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUE UNITS
R25 TC = 25 C 5000
Resistance
R100 TC = 100 C 493 5 %
B-value B25/50 R2 = R25 exp. [B25/50 (1/T2 - 1/(298.15 K))] 3375 5 % K
Maximum operating temperature 220 C
Dissipation constant 2 mW/C
Thermal time constant 8 s

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL MIN. TYP. MAX. UNITS
Q1 - Q4 TRENCH IGBT 1200 V - Junction to case thermal resistance (per switch) - - 0.58
Q2 - Q3 TRENCH IGBT 600 V- Junction to case thermal resistance (per switch) - - 0.72
RthJC
D1 - D4 AP diode - Junction to case thermal resistance (per diode) - - 0.67
D2 - D3 AP diode - Junction to case thermal resistance (per diode) - - 0.89
Q1 - Q4 TRENCH IGBT 1200 V - Case to sink thermal resistance (per switch) - 0.75 - C/W
Q2 - Q3 TRENCH IGBT 600 V - Case to sink thermal resistance (per switch) - 0.77 -
D1 - D4 AP diode - Case to sink thermal resistance (per diode) RthCS (1) - 0.78 -
D2 - D3 AP diode - Case to sink thermal resistance (per diode) - 0.65 -
Case to sink thermal resistance (per module) - 0.1 -
Mounting torque (M4) 2 - 3 Nm
Weight - 28 - g
Note
(1) Mounting surface flat, smooth, and greased

60 60
55 55
50 50
45 45 VGE = 9 V
TJ = 25 C
40 40 VGE = 12 V
TJ = 125 C
35 TJ = 150 C 35 VGE = 15 V
IC (A)

IC (A)

30 30 VGE = 18 V
25 25
20 20
15 15
10 10
5 5
0 0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

VCE (V) VCE (V)

Fig. 1 - Typical Q1 - Q4 Trench IGBT 1200 V Fig. 2 - Typical Q1 - Q4 Trench IGBT 1200 V
Output Characteristics VGE = 15 V Output Characteristics TJ = 125 C

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160 10
Allowable Case Temperature (C)

140 TJ = 150 C
1
120 TJ = 125 C
DC
100

ICES (mA)
0.1
80

60 0.01

40
0.001 TJ = 25 C
20

0 0.0001
0 10 20 30 40 50 60 70 100 200 300 400 500 600 700 800 900 1000 1100 1200

IC - Continuous Collector Current (A) VCES (V)

Fig. 3 - Maximum Q1 - Q4 Trench IGBT 1200 V Fig. 6 - Typical Q1 - Q4 Trench IGBT 1200 V
Continuous Collector Current vs. Case Temperature Zero Gate Voltage Collector Current

60 3.5
VCE = 20 V
55
3.0
50
45
2.5
40
Energy (mJ)

35 2.0 Eoff
IC (A)

30 TJ = 125 C
25 1.5
20 TJ = 25 C
1.0
15
10 Eon
0.5
5
0 0
4.0 5.0 6.0 7.0 8.0 9.0 0 10 20 30 40 50 60 70

VGE (V) IC (A)

Fig. 4 - Typical Q1 - Q4 Trench IGBT 1200 V Fig. 7 - Typical Q1 - Q4 Trench IGBT 1200 V
Transfer Characteristics Energy Loss vs. IC (with D1 - D4 Freewheeling Diode),
TJ = 125 C, VCC = 600 V, Rg = 4.7 , VGE = 15 V, L = 500 H

5.5 1000

5.0
TJ = 25 C
Switching Time (ns)

4.5 tf td(off)
VGEth (V)

4.0
100
3.5 TJ = 125 C
td(on)
3.0

2.5 tr

2.0 10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 10 20 30 40 50 60 70

IC (mA) IC (A)
Fig. 5 - Typical Q1 - Q4 Trench IGBT 1200 V Fig. 8 - Typical Q1 - Q4 Trench IGBT 1200 V
Gate Threshold Voltage Switching Time vs. IC (with D1 - D4 Freewheeling Diode)
TJ = 125 C, VCC = 600 V, Rg = 4.7 , VGE = 15 V, L = 500 H

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3.5 160

Allowable Case Temperature (C)

140
3.0
120
Energy (mJ)

2.5
Eon 100

2.0 80

60
1.5
Eoff 40
1.0
20

0.5 0
0 5 10 15 20 25 30 35 40 45 50 55 0 10 20 30 40 50 60

Rg () IF - Continuous Forward Current (A)

Fig. 9 - Typical Q1 - Q4 Trench IGBT 1200 V Fig. 12 - Maximum D1 - D4 Antiparallel Diode
Energy Loss vs. Rg (with D1 - D4 Freewheeling Diode) Forward Current vs. Case Temperature
TJ = 125 C, VCC = 600 V, IC = 30 A, VGE = 15 V, L = 500 H

1000 270
250
td(on)
230
Switching Time (ns)

td(off)
210

190 125 C
trr (ns)

tf
100
170
tr
15
150

130

110 25 C

10 90
0 5 10 15 20 25 30 35 40 45 50 55 100 200 300 400 500

Rg () dIF/dt (A/s)

Fig. 10 - Typical Q1 - Q4 Trench IGBT 1200 V Fig. 13 - Typical D1 - D4 Antiparallel Diode

Switching Time vs. Rg (with D1 - D4 Freewheeling Diode) Reverse Recovery Time vs. dIF/dt
TJ = 125 C, VCC = 600 V, IC = 30 A, VGE = 15 V, L = 500 H Vrr = 400 V, IF = 20 A

60 24
22
50
5
20
18 125 C
40
TJ = 125 C 16
Irr (A)

TJ = 150 C
IF (A)

30 14
12
20
10 25 C
8
10 TJ = 25 C
6
0 4
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 100 200 300 400 500

VFM (V) dIF/dt (A/s)

Fig. 11 - Typical D1 - D4 Antiparallel Diode Forward Characteristics Fig. 14 - Typical D1 - D4 Antiparallel Diode
Reverse Recovery Current vs. dIF/dt
Vrr = 400 V, IF = 20 A

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1700

1500
125 C
1300

Qrr (nC)
1100

900

700
25 C
500

300
100 200 300 400 500

dIF/dt (A/s)

Fig. 15 - Typical D1 - D4 Antiparallel Diode

Reverse Recovery Charge vs. dIF/dt
Vrr = 400 V, IF = 20 A

10
ZthJC - Thermal Impedance
Junction to Case (C/W)

0.
0.1
D = 0.5
D = 0.2
D = 0.1
0.01 D = 0.05
D = 0.02
D = 0.01
DC
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10

t1 - Rectangular Pulse Duration (s)

Fig. 16 - Maximum Thermal Impedance ZthJC Characteristics (Q1 - Q4 Trench IGBT 1200 V)

10
ZthJC - Thermal Impedance
Junction to Case (C/W)

0.
0.1
D = 0.5
D = 0.2
D = 0.1
0.01
D = 0.05
D = 0.02
D = 0.01
DC
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10

t1 - Rectangular Pulse Duration (s)

Fig. 17 - Maximum Thermal Impedance ZthJC Characteristics (D1 - D4 Antiparallel Diode)

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60 60
55 55 VCE = 20 V
50 50
45 45
40 TJ = 25 C 40 TJ = 125 C
35 TJ = 125 C 35

ICE (A)
IC (A)

30 TJ = 150 C 30
25 25
20
2 20 TJ = 25 C
15 15
10 10
5 5
0 0
0 0.5 1 1.5 2 2.5 3 5 6 7 8 9 10 11 12 13

VCE (V) VGE (V)

Fig. 18 - Typical Q2 - Q3 Trench IGBT 600 V Output Characteristics Fig. 21 - Typical Q2 - Q3 Trench IGBT 600 V
VGE = 15 V Transfer Characteristics

60 6.5
55
6.0
50 TJ = 25 C
45 VGE = 18 V 5.5
40 VGE = 15 V
5.0
VGEth (V)

35 VGE = 12 V
IC (A)

30 VGE = 9 V 4.5
25 TJ = 125 C
4.0
20
15 3.5
10
3.0
5
0 2.5
0 0.5 1.0 1.5 2.0 2.5 3.0 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9

VCE (V) IC (mA)

Fig. 19 - Typical Q2 - Q3 Trench IGBT 600 V Output Characteristics Fig. 22 - Typical Q2 - Q3 Trench IGBT 600 V
TJ = 125 C Gate Threshold Voltage

160 1
Allowable Case Temperature (C)

TJ = 150 C
140
0.1
120 TJ = 125 C

100 DC 0.01
ICES (mA)

80
0.001
60
TJ = 25 C
40
0.0001
20

0 0.00001
100 200 300 400 500 600
0 10 20 30 40 50 60 70 80

IC - Continuous Collector Current (A) VCES (V)

Fig. 23 - Typical Q2 - Q3 Trench IGBT 600 V
Fig. 20 - Maximum Q2 - Q3 Trench IGBT 600 V Zero Gate Voltage Collector Current
Continuous Collector Current vs. Case Temperature

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60 1000
55
50 TJ = 25 C
45 TJ = 150 C

Switching Time (ns)

40 tf
35
TJ = 125 C td(off)
IF (A)

30 100
25
td(on)
20
15 tr
10
5
0 10
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 10 20 30 40 50 60 70

VFM (V) IC (A)

Fig. 24 - Typical D2 - D3 Antiparallel Diode Fig. 27 - Typical Q2 - Q3 Trench IGBT 600 V Switching Time vs. IC
Forward Characteristics (with Freewheeling External TO-247 Diode Discrete 30ETH06)
TJ = 125 C, VCC = 300 V, Rg = 4.7 , VGE = 15 V, L = 500 H

160 0.80
Allowable Case Temperature (C)

0.75
140
0.70
120 0.65
0.60
100
Energy (mJ)

0.55
Eoff
80 0.50
0.45
60
0.40
40 0.35
0.30
20 Eon
0.25
0 0.20
0 5 10 15 20 25 30 35 40 45 50 0 5 10 15 20 25 30 35 40 45 50 55

IF - Continuous Forward Current (A) Rg ()

Fig. 25 - Maximum D2 - D3 Antiparallel Diode Fig. 28 - Typical Q2 - Q3 Trench IGBT 600 V Energy Loss vs. Rg
Forward Current vs. Case Temperature (with Freewheeling External TO-247 Diode Discrete 30ETH06)
TJ = 125 C, VCC = 300 V, IC =30 A, VGE = 15 V, L = 500 H

1.2 1000
1.1
1.0
Switching Time (ns)

0.9 Eoff td(on)

0.8 td(off)
Energy (mJ)

0.7
0.6 100 tf
0.5 Eon
0.4 tr
0.3
0.2
0.1
0 10
0 10 20 30 40 50 60 70 0 5 10 15 20 25 30 35 40 45 50 55

IC (A) Rg ()
Fig. 26 - Typical Q2 - Q3 Trench IGBT 600 V Energy Loss vs. IC Fig. 29 - Typical Q2 - Q3 Trench IGBT 600 V Switching Time vs. Rg
(with Freewheeling External TO-247 Diode Discrete 30ETH06 ) (with Freewheeling External TO-247 Diode Discrete 30ETH06)
TJ = 125 C, VCC = 300 V, Rg = 4.7 , VGE = 15 V, L = 500 H TJ = 125 C, VCC = 300 V, IC = 30 A, VGE = 15 V, L = 500 H

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80 6.0
75 5.5
70
5.0
65
4.5
60
4.0 125 C
55
trr (ns)

Irr (A)
50 3.5
45 3.0
40 125 C 25 C
2.5
35
25 C 2.0
30
25 1.5

20 1.0
100 200 300 400 500 100 200 300 400 500

dIF/dt (A/s) dIF/dt (A/s)

Fig. 30 - Typical D2 - D3 Antiparallel Diode Fig. 31 - Typical D2 - D3 Antiparallel Diode
Reverse Recovery Time vs. dIF/dt Reverse Recovery Current vs. dIF/dt
Vrr = 200 V, IF = 20 A Vrr = 200 V, IF = 20 A

90

85

80
125 C
Qrr (nC)

75

25 C
70

65

60
100 200 300 400 500

dIF/dt (A/s)

Fig. 32 - Typical D2 - D3 Antiparallel Diode

Reverse Recovery Charge vs. dIF/dt
Vrr = 200 V, IF = 20 A

10
ZthJC - Thermal Impedance
Junction to Case (C/W)

0.
0.1
D = 0.5
D = 0.2
D = 0.1
0.01 D = 0.05
D = 0.02
D = 0.01
DC
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10

t1 - Rectangular Pulse Duration (s)

Fig. 33 - Maximum Thermal Impedance ZthJC Characteristics (Q2 - Q3 Trench IGBT 600 V)

Revision: 16-Jun-16 11 Document Number: 94684

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 VS-ENQ030L120S
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Vishay Semiconductors
10

ZthJC - Thermal Impedance

Junction to Case (C/W)
1

D = 0.5
D = 0.2
0.1 D = 0.1
D = 0.05
D = 0.02
D = 0.01
DC
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10

t1 - Rectangular Pulse Duration (s)

Fig. 34 - Maximum Thermal Impedance ZthJC Characteristics (D2 - D3 Antiparallel Diode)

ORDERING INFORMATION TABLE

Device code VS- EN Q 030 L 120 S

1 2 3 4 5 6 7

1 - Vishay Semiconductors product

2 - Package indicator (EN = EMIPAK-1B)
3 - Circuit configuration (Q = neutral point clamp topology)
4 - Current rating (030 = 30 A)
5 - Switch die technology (L = ultrafast Trench IGBT 1200 V and Trench IGBT 600 V)
6 - Voltage rating (120 = 1200 V)
7 - Diode die technology (S = SiC diode)

Revision: 16-Jun-16 12 Document Number: 94684

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 VS-ENQ030L120S
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Vishay Semiconductors
CIRCUIT CONFIGURATION

DC+
DC+ T1

E3 G3
Q1
T2
D1
Q3
D2 G1
E1
M BR
BR
M
BR
D3 Q4
Q2
D4

G4
E4

DC-
DC-

PACKAGE
16 16

12.8 12.8
9.6
3.2
3.2
3.2

T1 T2 BR BR BR G4 E4
12.8

E1

G3 E3 E2 G2
G1
9.6
12.8

DC-
DC+ DC+ M M DC-
3.2

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95558

Revision: 16-Jun-16 13 Document Number: 94684

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 Outline Dimensions
www.vishay.com
Vishay Semiconductors
EMIPAK-1B PressFit
DIMENSIONS in millimeters

3 0.2
12 0.35

4.1 0.3

62.8 0.5

53 0.15

48 0.5

42.5 0.3

37 0.5
.5
x8
2.1

3.2

12.8
9.6
6.4
20.4 0.3
30.9 0.5

28.1 0.3
33.8 0.5

16.4 0.3

6.4

9.6

12.8
3.2

3.2
.1
0

3.2
4.3

6.4 6.4

9.6 9.6
Typical pin position 0.4
12.8 12.8

16 16

Revision: 18-May-17 1 Document Number: 95558

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 Legal Disclaimer Notice
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Disclaimer

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Revision: 08-Feb-17 1 Document Number: 91000