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SEMICONDUCTOR TECHNICAL DATA


 
  
   
. . . designed for use in general purpose amplifier and switching applications.  
CollectorEmitter Saturation Voltage 
VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc
CollectorEmitter Sustaining Voltage
 
VCEO(sus) = 60 Vdc (Min) TIP31A, TIP32A
VCEO(sus) = 80 Vdc (Min) TIP31B, TIP32B  
 
VCEO(sus) = 100 Vdc (Min) TIP31C, TIP32C
High Current Gain Bandwidth Product

fT = 3.0 MHz (Min) @ IC = 500 mAdc

Compact TO220 AB Package *Motorola Preferred Device

3 AMPERE

*MAXIMUM RATINGS POWER TRANSISTORS

COMPLEMENTARY

TIP31A TIP318 TIP31C

SILICON
Rating Symbol TIP32A TIP32B TIP32C Unit

60 80 100 VOLTS
CollectorEmitter Voltage VCEO 60 80 100 Vdc 40 WATTS

CollectorBase Voltage VCB 60 80 100 Vdc

EmitterBase Voltage VEB 5.0 Vdc

Collector Current Continuous IC 3.0 Adc

Peak 5.0

Base Current IB 1.0 Adc

Total Power Dissipation PD

@ TC = 25_C 40 Watts
Derate above 25_C W/_C

0.32

Total Power Dissipation PD

@ TA = 25_C 2.0 Watts

Derate above 25_C 0.016 W/_C CASE 221A06

TO220AB
Unclamped Inductive E 32 mJ

Load Energy (1)

Operating and Storage Junction TJ, Tstg 65 to + 150 _C
Temperature Range

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

_C/W

Thermal Resistance, Junction to Ambient RJA 62.5

Thermal Resistance, Junction to Case RJC 3.125 _C/W
(1) IC = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 ..

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

Motorola, Inc. 1995 31

Motorola Bipolar Power Transistor Device Data


 
 
 
 
 
 

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

CollectorEmitter Sustaining Voltage (1) VCEO(sus) Vdc

(IC = 30 mAdc, IB = 0) TIP31A, TIP32A 60

TIP31B, TIP32B 80

TIP31C, TIP32C 100

Collector Cutoff Current (VCE = 30 Vdc, IB = 0) TIP31A, TIP32A ICEO 0.3 mAdc
Collector Cutoff Current (VCE = 60 Vdc, IB = 0) TIP31B, TIP31C 0.3

TIP32B, TIP32C 0.3

Collector Cutoff Current ICES Adc

(VCE = 60 Vdc, VEB = 0) TIP31A, TIP32A 200
(VCE = 80 Vdc, VEB = 0) TIP31B, TIP32B 200

(VCE = 100 Vdc, VEB = 0) TIP31C, TIP32C 200

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO 1.0 mAdc

ON CHARACTERISTICS (1)

DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc) hFE 25
DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc) 10 50

CollectorEmitter Saturation Voltage (IC = 3.0 Adc, IB = 375 mAdc) VCE(sat) 1.2 Vdc

BaseEmitter On Voltage (IC = 3.0 Adc, VCE = 4.0 Vdc) VBE(on) 1.8 Vdc

DYNAMIC CHARACTERISTICS

CurrentGain Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) fT 3.0 MHz
SmallSignal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz) hfe 20
v
(1) Pulse Test: Pulse Width v 300 s, Duty Cycle 2.0%.

TC TA
40 4.0
PD, POWER DISSIPATION (WATTS)

TC
30 3.0

20 2.0

TA
10 1.0

0 0
0 20 40 60 80 100 120 140 160
T, TEMPERATURE (C)
Figure 1. Power Derating
TURNON PULSE VCC
APPROX 2.0
RC
+11 V IC/IB = 10
1.0 TJ = 25C
Vin SCOPE 0.7
Vin 0 tr @ VCC = 30 V
RB 0.5
VEB(off)
t1
t, TIME ( s)

0.3 tr @ VCC = 10 V
t3 Cjd << Ceb
APPROX
+11 V t1 7.0 ns 4.0 V
0.1
100 < t2 < 500 s
Vin t3 < 15 ns 0.07 td @ VEB(off) = 2.0 V
0.05

0.03
t2 DUTY CYCLE 2.0%
0.02
TURNOFF PULSE APPROX 9.0 V 0.03 0.05 0.07 0.1 0.3 0.5 0.7 1.0 3.0
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS. IC, COLLECTOR CURRENT (AMP)
Figure 2. Switching Time Equivalent Circuit Figure 3. TurnOn Time

32 Motorola Bipolar Power Transistor Device Data


 
 
 
 
 
 

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

1.0
0.7
D = 0.5
0.5

0.3
0.2
0.2
0.1
0.1 P(pk)
0.05 ZJC(t) = r(t) RJC
0.07
RJC(t) = 3.125C/W MAX
0.05 D CURVES APPLY FOR POWER
0.02
0.03 PULSE TRAIN SHOWN t1
READ TIME AT t1 t2
0.02
0.01 TJ(pk) TC = P(pk) ZJC(t)
SINGLE PULSE DUTY CYCLE, D = t1/t2
0.01
0.01 0.02 0.05 1.0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k
t, TIME (ms)

Figure 4. Thermal Response

10
There are two limitations on the power handling ability of a
5.0 transistor: average junction temperature and second break-
IC, COLLECTOR CURRENT (AMP)

100 s down. Safe operating area curves indicate IC VCE limits of

5.0 ms the transistor that must be observed for reliable operation;
2.0 i.e., the transistor must not be subjected to greater dissipa-
1.0 ms tion than the curves indicate.
1.0 SECONDARY BREAKDOWN
LIMITED @ TJ 150C The data of Figure 5 is based on T J(pk) = 150_C; TC is
THERMAL LIMIT @ TC = 25C variable depending on conditions. Second breakdown pulse
0.5
limits are valid for duty cycles to 10% provided T J(pk)
v
(SINGLE PULSE)
BONDING WIRE LIMIT 150_C. T J(pk) may be calculated from the data in Fig-
0.2 CURVES APPLY TIP31A, TIP32A ure 4. At high case temperatures, thermal limitations will re-
BELOW RATED VCEO TIP31B, TIP32B duce the power that can be handled to values less than the
TIP31C, TIP32C limitations imposed by second breakdown.
0.1
5.0 10 20 50 100
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)

Figure 5. Active Region Safe Operating Area

3.0 300
2.0 IB1 = IB2
TJ = + 25C
ts IC/IB = 10
ts = ts 1/8 tf 200
1.0 tf @ VCC = 30 V TJ = 25C
CAPACITANCE (pF)

0.7
0.5
t, TIME ( s)

0.3 tf @ VCC = 10 V 100

Ceb
0.2
70
0.1
0.07 50 Ccb
0.05
0.03 30
0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 40
IC, COLLECTOR CURRENT (AMP) VR, REVERSE VOLTAGE (VOLTS)

Figure 6. TurnOff Time Figure 7. Capacitance

Motorola Bipolar Power Transistor Device Data 33


 
 
 
 
 
 
500 2.0

VCE , COLLECTOREMITTER VOLTAGE (VOLTS)

300 TJ = 150C VCE = 2.0 V TJ = 25C
1.6
hFE, DC CURRENT GAIN

25C
100
1.2 IC = 0.3 A 1.0 A 3.0 A
70 55C
50

30 0.8

0.4
10
7.0
5.0 0
0.03 0.05 0.07 0.1 0.3 0.5 0.7 1.0 3.0 1.0 2.0 5.0 10 20 50 100 200 500 1000
IC, COLLECTOR CURRENT (AMP) IB, BASE CURRENT (mA)

Figure 8. DC Current Gain Figure 9. Collector Saturation Region

1.4 + 2.5

V, TEMPERATURE COEFFICIENTS (mV/C)

TJ = 25C + 2.0 *APPLIES FOR IC/IB hFE/2
1.2
+ 1.5 TJ = 65C TO + 150C
1.0
V, VOLTAGE (VOLTS)

+ 1.0

0.8 + 0.5 *VC FOR VCE(sat)

VBE(sat) @ IC/IB = 10 0
0.6 0.5
VBE @ VCE = 2.0 V
0.4 1.0
1.5 VB FOR VBE
0.2 VCE(sat) @ IC/IB = 10
2.0
0 2.5
0.003 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 0.003 0.005 0.01 0.02 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMP)

Figure 10. On Voltages Figure 11. Temperature Coefficients

R BE , EXTERNAL BASEEMITTER RESISTANCE (OHMS)

103 107
VCE = 30 V VCE = 30 V
102 IC = 10 x ICES
IC, COLLECTOR CURRENT ( A)

106
TJ = 150C
101
IC ICES
105
100 100C

104 IC = 2 x ICES
101 REVERSE FORWARD

102 25C 103 (TYPICAL ICES VALUES

OBTAINED FROM FIGURE 12)
ICES
103 102
0.4 0.3 0.2 0.1 0 + 0.1 + 0.2 + 0.3 + 0.4 + 0.5 + 0.6 20 40 60 80 100 120 140 160
VBE, BASEEMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (C)

Figure 12. Collector CutOff Region Figure 13. Effects of BaseEmitter Resistance

34 Motorola Bipolar Power Transistor Device Data


 
 
 
 
 
 
PACKAGE DIMENSIONS

NOTES:
SEATING 1. DIMENSIONING AND TOLERANCING PER ANSI
T PLANE
Y14.5M, 1982.
B F C 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
T S BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
4
INCHES MILLIMETERS
A DIM MIN MAX MIN MAX
Q A 0.570 0.620 14.48 15.75
1 2 3 B 0.380 0.405 9.66 10.28
U C 0.160 0.190 4.07 4.82
H D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
K G 0.095 0.105 2.42 2.66
Z H 0.110 0.155 2.80 3.93
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
L R N 0.190 0.210 4.83 5.33
V Q 0.100 0.120 2.54 3.04
J R 0.080 0.110 2.04 2.79
G S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
D U 0.000 0.050 0.00 1.27
N V 0.045 1.15
Z 0.080 2.04
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR

CASE 221A06
TO220AB
ISSUE Y

Motorola Bipolar Power Transistor Device Data 35


 
 
 
 
 
 

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
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36 Motorola Bipolar Power Transistor Device Data

*TIP31A/D*
TIP31A/D