AENG001-4-2 Analogue Electronics

Experiment 2 Voltage Divider Bias for BJTs

Introduction:

Voltage divider bias is one of the best and most commonly used bias methods for stabilizing BJT
circuits. In Section I of this experiment you will set up a voltage divider-biased circuit, predict
circuit values, and make circuit measurements to evaluate the stability of the quiescent circuit
values.

Section II of this experiment deals with troubleshooting. In this section you will simulate three
different faults and make measurements of the circuit for each fault. This will develop your
troubleshooting knowledge by letting you observe the effects of a components failure and by
giving you the measurement data of the fault.

Objectives:

In this experiment you will:

a. Add to your understanding of voltage divider bias

b. Verify the stability of a voltage divider-biased circuit
c. Determine circuit values for different component failures

Equipment and Materials:

DC power supply
Digital multimeter
Circuit protoboard
NPN transistor [2], 2N3904 or equivalent
Resistors: 270 , 1.2 k, 2.7 k,12 k, 2.2 M

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AENG001-4-2 Analogue Electronics

Section 1 Functional Experiment

Figure 2.1

1. Construct the circuit shown in Figure 2.1. Set the DC power supply to 12 V, and connect
the power supply to your circuit.

2. Using the digital multimeter, measure and record the circuit parameters listed below.

IE = VB = VE =

VC = VCE =

3. Turn off the DC power supply and substitute a second 2N3904 transistor. Reapply circuit
power, measure and record the circuit parameters again.

IE = VB = VE =

VC = VCE =

Changing transistors in the circuit gave two measurements with two different (although unknown)
values of beta. To test the circuit stability further, we can use the fact that beta increases with
temperature. The next set of measurements will be made while the transistor is being heated.

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AENG001-4-2 Analogue Electronics

Figure 2.2

4. (Optional) You can use a heat gun or soldering iron to heat the transistor. If you use a
soldering iron, do not actually touch the transistor with the hot tip of the soldering iron
hold the soldering iron close to the transistor. Heat the transistor for about 1 minute, or
until the case is very warm to the touch. Make the following measurements quickly
following the heating of the transistor before it returns to ambient temperature:

IE = VB = VE =

VC = VCE =

An alternative method to heating the transistor is to cool it using component cooler spray. This
will decrease beta.

5. Now you have three sets of data from your circuit. Solve the circuit for the same
parameters as those measured. Calculate the Thevenin values of the voltage divider
RTH and VTH. Enter these values in the blanks provided below and in the beta box model
in the Figure 2.2. Assume a beta of 150, and, using the beta box model, calculate emitter
current, collector voltage, base voltage, and emitter voltage. Also enter these results in
the appropriate blanks provided below.

VTH = RTH = VB =

VE = VC = VCE =

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AENG001-4-2 Analogue Electronics

Section 2 Troubleshooting

Fault 1 RB divider resistor fails

When a resistor fails, it becomes a high resistance, or open circuit. In this procedure, you will
simulate an open-resistor failure by substituting a large resistance value for resistor RB.

1. Modify your circuit of Figure 2.1 by replacing the 2.7 k resistor with the 2.2 M resistor.

2. Apply 12 VDC to the circuit. Using the digital multimeter, measure and record the circuit
values listed below:

VB = VE =

VC = VCE =

3. Compare the circuit values just obtained to those of a normal circuit (Section 1, step 2 or
3). Notice in particular the readings that had the large change.

Fault 2 R1 divider resistor fails

1. Turn off the circuit power and replace RB with the 2.7 k resistor. Exchange the 12 k
value of R1 with the 2.2 M resistor.

2. Reapply 12 VDC to the circuit. Using the multimeter, measure and record the circuit values
listed below.

VB = VE =

VC = VCE =

You should have found that the measured circuit values for this fault are quite different from those
of a normal circuit. Also notice the differences from the values obtained for the RB fault.

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Fault 3 Emitter resistor fails

1. Turn off the DC power to the circuit and replace resistor R1 with the correct value of 12
k. Exchange the 270 emitter resistor for the 2.2 M resistor.

2. Reapply 12 VDC to the circuit. Using the multimeter, measure and record the circuit values
listed below.

VB = VE =

VC = VCE =

Notice that each fault gave a different and unique set of circuit values, and that in each case, the
transistor shifted to either a cut off or a saturation condition.

Discussion

Section 1

1. Discuss, from the standpoint of the stable operating point, the voltage divider portion of a
voltage divider-biased circuit. Consider the effects of large resistances in the divider, both
firm (10% error) and stiff (1% error).

2. Discuss the stability of voltage divider-biased transistor based on the data you have taken.
Consider such factors as the use of two different transistors, as well as the forced beta
changes of heating or cooling the transistor, and the percentage difference in the values
of emitter current and collector voltages.

3. If you used the quick method of your text for solving the firm or stiff divider for the circuit
in Figure 2.1, do you believe this would give a satisfactory value for emitter current?
Explain your answer.

Section 2

1. For each fault, describe the transistor state (cut off or saturation). Describe how you would
use this knowledge in troubleshooting a circuit.

2. Based on your measured data of circuit failures, what circuit measurements would you
need to make in order to identify each fault?

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