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SEMICONDUCTOR TECHNICAL DATA by MAC97/D


 

  
 
 

. . . designed for use in solid state relays, MPU interface, TTL logic and any other light
industrial or consumer application. Supplied in an inexpensive TO92 package which (Device Date Code
is readily adaptable for use in automatic insertion equipment. 9625 and Up)

OnePiece, InjectionMolded Unibloc Package Motorola preferred devices

Sensitive Gate Triggering in Four Trigger Modes for all possible Combinations of
Trigger Sources, and Especially for Circuits that Source Gate Drives
All Diffused and Glassivated Junctions for Maximum Uniformity of Parameters
and Reliability TRIACs
0.8 AMPERE RMS
MAXIMUM RATINGS (TJ = 25C unless otherwise noted) 200 600 VOLTS
Rating Symbol Value Unit
Peak Repetitive Off-State Voltage VDRM Volts
(Gate Open, TJ = 40 to +110C)(1)
1/2 Sine Wave 50 to 60 Hz, Gate Open
MT1
MAC974, MAC97A4 200
MAC976, MAC97A6 400 MT2
MAC978, MAC97A8 600
G
On-State RMS Current IT(RMS) 0.8 Amp
Full Cycle Sine Wave 50 to 60 Hz (TC = +50C)
Peak Nonrepetitive Surge Current ITSM 8.0 Amps
(One Full Cycle, 60 Hz, TA = 110C)
Circuit Fusing Considerations I2t 0.26 A2s
TJ = 40 to +110C (t = 8.3 ms)
v 2.0 ms)
Peak Gate Voltage (t VGM 5.0 Volts
MT1
Peak Gate Power (t v 2.0 ms) PGM 5.0 Watts G
Average Gate Power (TC = 80C, t v 8.3 ms) PG(AV) 0.1 Watt
MT2

Peak Gate Current (t v 2.0 ms) IGM 1.0 Amp

CASE 2904
Operating Junction Temperature Range TJ 40 to +110 C TO226AA, STYLE 12
Storage Temperature Range Tstg 40 to +150 C (TO92)

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RJC 75 C/W
Thermal Resistance, Junction to Ambient RJA 200 C/W
(1) VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be
tested with a constant current source such that the voltage ratings of the devices are
exceeded.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

Motorola Thyristor Device Data 1

Motorola, Inc. 1996


   

ELECTRICAL CHARACTERISTICS (TC = 25C, and Either Polarity of MT2 to MT1 Voltage unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Peak Blocking Current(1) IRRM 0.1 mA
(VD = Rated VDRM, TJ = 110C, Gate Open)
Peak On-State Voltage (Either Direction) VTM 1.65 Volts
(ITM = 1.1 A Peak; Pulse Width v 2.0 ms, Duty Cycle v 2.0%)
Gate Trigger Current (Continuous dc) IGT mA
(VD = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+) 10
MT2(+), G() 10
MT2(), G() 10
MT2(), G(+) MAC97 10

MT2(+), G(+) 5.0

MT2(+), G() 5.0
MT2(), G() 5.0
MT2(), G(+) MAC97A 7.0
Gate Trigger Voltage, (Continuous dc) VGT Volts
(VD = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+) All Types 2.0
MT2(+), G() All Types 2.0
MT2(), G() All Types 2.0
MT2(), G(+) All Types 2.5
(VD = Rated VDRM, RL = 10 k Ohms, TJ = 110C)
MT2(+), G(+); MT2(), G(); MT2(+), G() All Types 0.1
MT2(), G(+) All Types 0.1
Holding Current IH 5.0 mA
(VD = 12 Vdc, ITM = 200 mA, Gate Open)
Gate Controlled TurnOn Time tgt 2.0 m s
(VD = Rated VDRM, ITM = 1.0 A pk, IG = 25 mA)
Critical RateofRise of Commutation Voltage dv/dtc 1.5 V/ms
(f = 250 Hz, ITM = 1.0 A, Commutating di/dt = 1.5 A/mS,
OnState Current Duration = 2.0 mS, VDRM = 200 V,
Gate Unenergized, TC = 110C,
Gate Source Resistance = 150 W, See Figure 13)
Critical RateofRise of Off State Voltage dv/dt 10 V/ms
(Vpk = Rated VDRM, TC = 110C, Gate Open, Exponential Method)

2 Motorola Thyristor Device Data



   

TC, MAXIMUM ALLOWABLE CASE TEMPERATURE ( C)

110 110
T = 30
100 T = 30 100

I T(RMS) , MAXIMUM ALLOWABLE

AMBIENT TEMPERATURE ( C)
90 60
90 60
DC DC 90
90 80
80
180 70 180
70 120 120
60
60
50
50
40
40 30
= CONDUCTION ANGLE = CONDUCTION ANGLE
30 20
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4
IT(RMS), RMS ONSTATE CURRENT (AMPS) IT(RMS), RMS ONSTATE CURRENT (AMPS)

Figure 1. RMS Current Derating Figure 2. RMS Current Derating

P(AV), MAXIMUM AVERAGE POWER DISSIPATION (WATTS)

IT, INSTANTANEOUS ONSTATE CURRENT (AMPS)

1.2 10
TYPICAL @ TJ = 25C
1.0
MAXIMUM @ TJ = 110C

0.8 1.0
= CONDUCTION ANGLE
0.6
MAXIMUM @ TJ = 25C
0.4 0.1

0.2
MAXIMUM @ TJ = 110C
0 0.01
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
IT(RMS), RMS ONSTATE CURRENT (AMPS) VT, INSTANTANEOUS ONSTATE VOLTAGE (VOLTS)

Figure 3. Power Dissipation Figure 4. OnState Characteristics

R(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

1.0 10
I TSM , PEAK SURGE CURRENT (AMPS)

5.0
Q Q
Z JC(t) = R JC(t) @ r(t)

0.1 3.0

TJ = 110C
2.0 f = 60 Hz
CYCLE

Surge is preceded and followed by rated current.

0.01 1.0
0.1 1.0 10 100 1S103 1S104 1.0 2.0 3.0 5.0 10 30 50 100
t, TIME (ms) NUMBER OF CYCLES

Figure 5. Transient Thermal Response Figure 6. Maximum Allowable Surge Current

Motorola Thyristor Device Data 3



   

6.0 10
Q3

I GT, GATE TRIGGER CURRENT (mA)

5.0
I H, HOLDING CURRENT (mA)

Q2
4.0 MAIN TERMINAL Q4
#2 POSITIVE Q1
3.0 1.0

2.0 MAIN TERMINAL

#2 NEGATIVE

1.0

0 0.1
40 20 0 20 40 60 80 100 110 40 20 0 20 40 60 80 100 110
TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)

Figure 7. Typical Holding Current Variation Figure 8. Typical Gate Trigger Current
Variation

1.1 60
VGT, GATE TRIGGER VOLTAGE (VOLTS)

600 Vpk
TJ = 110C
0.9 Q3 50 MAIN TERMINAL

STATIC dv/dt (V/mS)

Q4 #2 POSITIVE
Q2
Q1 MAIN TERMINAL
0.7 40
#2 NEGATIVE

0.5 30

0.3 20
40 20 0 20 40 60 80 100 10 100 1000 10,000
TJ, JUNCTION TEMPERATURE (C) RGK, GATE MT1 RESISTANCE (OHMS)

Figure 9. Gate Trigger Voltage Variation Figure 10. Exponential Static dv/dt versus
Gate MT1 Resistance

10 10
60 Hz

180 Hz
60C
COMMUTATING dv/dt

COMMUTATING dv/dt

ITM 80C 300 Hz

dv/dtc , (V/mS)

dv/dtc , (V/mS)

100C 400 Hz
110C
tw

f + 2t1
+ 6f1000I
w VDRM = 200 V
TM
VDRM (di dt) c
1.0 1.0
1.0 10 60 70 80 90 100 110
di/dtc, RATE OF CHANGE OF COMMUTATING CURRENT (A/mS) TJ, JUNCTION TEMPERATURE (C)

Figure 11. Typical Commutating dv/dt versus Figure 12. Typical Commutating dv/dt versus
Current Crossing Rate and Junction Temperature Junction Temperature at 0.8 Amps RMS

4 Motorola Thyristor Device Data



   

80 mHY 1N4007
LL

75 VRMS
MEASURE
ADJUST FOR RS 56
I
ITM, 60 Hz VAC

TRIGGER CONTROL
TRIGGER
CHARGE
CS 0.047 CS 200 V
CHARGE CONTROL 2 +
ADJUST FOR
dv/dt(c)
1N914 1
51
5 mF
NONPOLAR G
CL

NOTE: Component values are for verification of rated (dv/dt)c. See AN1048 for additional information.

Figure 13. Simplified Q1 (dv/dt)c Test Circuit

Motorola Thyristor Device Data 5



   

PACKAGE DIMENSIONS

NOTES:
A B 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
STYLE 12: 2. CONTROLLING DIMENSION: INCH.
PIN 1. MAIN TERMINAL 1 3. CONTOUR OF PACKAGE BEYOND DIMENSION R
R 2. GATE IS UNCONTROLLED.
3. MAIN TERMINAL 2 4. DIMENSION F APPLIES BETWEEN P AND L.
P DIMENSION D AND J APPLY BETWEEN L AND K
L MINIMUM. LEAD DIMENSION IS UNCONTROLLED
F IN P AND BEYOND DIMENSION K MINIMUM.
SEATING
PLANE K INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
X X D D 0.016 0.022 0.41 0.55
G F 0.016 0.019 0.41 0.48
G 0.045 0.055 1.15 1.39
H J H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
V C K 0.500 12.70
L 0.250 6.35
SECTION XX N 0.080 0.105 2.04 2.66
1 N P 0.100 2.54
R 0.115 2.93
N V 0.135 3.43

CASE 2904
(TO226AA)
(TO92)

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals
must be validated for each customer application by customers technical experts. Motorola does not convey any license under its patent rights nor the rights of
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6 Motorola Thyristor Device Data

*MAC97/D*
MAC97/D
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