REVIEW ON BJTs

Transistor Construction
There are two types of transistors:
pnp
npn
pnp

The terminals are labeled:

E - Emitter
B - Base
C - Collector

npn

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 Transistor Operation
With the external sources, VEE and VCC, connected as shown:

The emitter-base junction is forward biased

The base-collector junction is reverse biased

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 Currents in a Transistor

Emitter current is the sum of the collector and

base currents:

IE = IC + IB

The collector current is comprised of two

currents:
IC = IC + I CO
majority minority

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Common-Base Configuration

The base is common to both input (emitterbase) and

output (collectorbase) of the transistor.

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 Common-Base Amplifier

Input Characteristics

This curve shows the relationship

between of input current (IE) to input
voltage (VBE) for three output voltage
(VCB) levels.

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 Common-Base Amplifier

Output Characteristics
This graph demonstrates
the output current (IC) to
an output voltage (VCB) for
various levels of input
current (IE).

I CO = I CBO

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 Operating Regions

Active Operating range of the

amplifier.
Cutoff The amplifier is basically
off. There is voltage, but little
current.
Saturation The amplifier is full on.
There is current, but little voltage.

Regions Base-Emitter Collector-Base

Active Forward-biased Reverse-biased
Cutoff Reverse-biased Reverse-biased
Saturation Forward-biased Forward-biased

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 Approximations

Emitter and collector currents:

I I
C E

Base-emitter voltage:

VBE = 0.7 V (for Silicon)

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 Alpha ()

Alpha () is the ratio of IC to IE :

IC
dc =
IE

Ideally: = 1
I C = I E + I CBO
In reality: is between 0.9 and 0.998

Alpha () in the AC mode:

I C
ac =
I E V = constant
CB

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 Transistor Amplification
Assume Ri and Ro from input & output
characteristic curves

Currents and Voltages: Voltage Gain:

Vi 200mV VL 50V
I E Ii
= = = = 10mA Av = = = 250
Ri 20 Vi 200mV
I I
C E
I I = 10 mA
L i
V = I R = (10 ma )(5 k) = 50 V
L L

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 CommonEmitter Configuration

The emitter is common to both input

(base-emitter) and output (collector-
emitter).

The input is on the base and the

output is on the collector.

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Common-Emitter Characteristics

Collector Characteristics Base Characteristics

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 Common-Emitter Amplifier Currents
Ideal Currents

IE = I C + I B IC = I E

Actual Currents

IC = IE + ICBO where ICBO = minority collector current

ICBO is usually so small that it can be ignored, except in high

power transistors and in high temperature environments.

When IB = 0 A the transistor is in cutoff, but there is some minority

current flowing called ICEO.
ICBO
ICEO = I B =0 A
1

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 Beta ()
represents the amplification factor of a transistor. ( is
sometimes referred to as hfe, a term used in transistor modeling
calculations)

In DC mode:
IC
dc =
IB

In AC mode:
IC
ac = V CE = constant
IB

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 Beta ()
Determining from a Graph

(3.2 mA 2.2 mA)

AC =
(30 A 20 A)
1 mA
= V = 7.5
10 A CE
= 100

2.7 mA
DC = V CE = 7.5
25 A
= 108

Both values are usually reasonably close and are often used interchangeably

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 Beta ()

Relationship between amplification factors and

= =
+1 1

Relationship Between Currents

I C = IB I E = ( + 1)I B

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 CommonCollector Configuration

The input is on the

base and the output is
on the emitter.

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 CommonCollector Configuration

The characteristics are

similar to those of the
common-emitter
configuration, except the
vertical axis is IE.

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Operating Limits for Each Configuration

VCE is at maximum and IC is at

minimum (ICmax= ICEO) in the cutoff
region.

IC is at maximum and VCE is at

minimum (VCE max = VCEsat = VCEO) in
the saturation region.

The transistor operates in the active

region between saturation and cutoff.

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 Power Dissipation
Common-base:
PCmax = VCB I C

Common-emitter:

PCmax = VCE I C

Common-collector:

PCmax = VCE I E

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Transistor Specification Sheet

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Transistor Specification Sheet

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Transistor Terminal Identification

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