SS9012

SS9012

1W Output Amplifier of Potable Radios in

Class B Push-pull Operation.
High total power dissipation. (PT=625mW)
High Collector Current. (IC= -500mA)
Complementary to SS9013
Excellent hFE linearity.
1 TO-92
1. Emitter 2. Base 3. Collector

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25C unless otherwise noted
Symbol Parameter Ratings Units
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -20 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -500 mA
PC Collector Power Dissipation 625 mW
TJ Junction Temperature 150 C
TSTG Storage Temperature -55 ~ 150 C

Electrical Characteristics Ta=25C unless otherwise noted

Symbol Parameter Test Condition Min. Typ. Max. Units
BVCBO Collector-Base Breakdown Voltage IC = -100A, IE =0 -40 V
BVCEO Collector-Emitter Breakdown Voltage IC = -1mA, IB =0 -20 V
BVEBO Emitter-Base Breakdown Voltage IE = -100A, IC =0 -5 V
ICBO Collector Cut-off Current VCB = -25V, IE =0 -100 nA
IEBO Emitter Cut-off Current VEB = -3V, IC =0 -100 nA
hFE1 DC Current Gain VCE = -1V, IC = -50mA 64 120 202
hFE2 VCE = -1V, IC = -500mA 40 90
VCE (sat) Collector-Emitter Saturation Voltage IC = -500mA, IB = -50mA -0.18 -0.6 V
VBE (sat) Base-Emitter Saturation Voltage IC = -500mA, IB = -50mA -0.95 -1.2 V
VBE (on) Base-Emitter On Voltage VCE = -1V, IC = -10mA -0.6 -0.67 -0.7 V

hFE Classification
Classification D E F G H
hFE1 64 ~ 91 78 ~ 112 96 ~ 135 112 ~ 166 144 ~ 202

2002 Fairchild Semiconductor Corporation Rev. A4, November 2002

 SS9012
Typical Characteristics

-50 1000
IB=-300A
VCE = -1V
IB=-250A
IC[mA], COLLECTOR CURRENT

-40

hFE, DC CURRENT GAIN

IB=-200A

-30
IB=-150A
100

IB=-100A
-20

IB=-50A
-10

10
-0 -10 -100 -1000
-0 -10 -20 -30 -40 -50

VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT

Figure 1. Static Characteristic Figure 2. DC current Gain

fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT 1000

-1000
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

VCE=-6V
VBE(sat)

100

-100
VCE(sat)

10

IC=10IB
-10 1
-10 -100 -1000 -1 -10 -100 -1000 -10000

IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT

Figure 3. Base-Emitter Saturation Voltage Figure 4. Current Gain Bandwidth Product

Collector-Emitter Saturation Voltage

2002 Fairchild Semiconductor Corporation Rev. A4, November 2002

 SS9012
Package Dimensions

TO-92
+0.25
4.58 0.15

4.58 0.20

0.46 0.10
14.47 0.40

+0.10
1.27TYP 1.27TYP 0.38 0.05
[1.27 0.20] [1.27 0.20]

3.60 0.20
3.86MAX

(0.25)
+0.10
0.38 0.05
1.02 0.10

(R2.29)

Dimensions in Millimeters

2002 Fairchild Semiconductor Corporation Rev. A4, November 2002

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As used herein:
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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

2002 Fairchild Semiconductor Corporation Rev. I1

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