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W .100 O M.T HGTG40N60A4
W Y .C W
W 00 .T
W W.1 Y.COM W
Data .TW
MSheet
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W .100 O M.T 2003
August File Number
O W . C
0 0 Y.C .T W W 1 0 0 Y .T W
W.1 OM W. OM
WW .100Y.C M.TW WW .100Y.C M.TW
W O W O
600V, .T W
SMPS SeriesWWN-Channel 0 0 Y.C IGBT .T W WW Features. 1 0 0Y.C M.TW
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W
WW 100kHz 0Y .CO .TW
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WW Ordering 0 0 Y
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W.1 NUMBER WWBRAND OM W O
WW PART 0 Y .CO .TPACKAGE W W 0 0 Y.C .T W WW .100Y.C M.TW
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W.1 Y.COMTO-247 .1 M WW 00Y.CO .TW
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HGTG40N60A4 W W
40N60A4WW 00Y.CO .TW W
W .100 M.T .1 M .1 M
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W WW 00Y.CO .TW W WW 00Y.COCOLLECTOR .TW
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WW .100Y.C M.TW
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WW .100Y.C M.TW WW .100Y.C M.TW
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FAIRCHILD CORPORATION
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W U.S. PATENTS W .100 .T
W .100 O M W C O W W .COM
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2003 Fairchild Semiconductor Corporation
W
W .100 O M.T HGTG40N60A4 Rev. B2
W Y .C
W 00
W W.1
W
W
O M.T
Y. C W
HGTG40N60A4 W .100 O M.T
WW .100Y.C M.TW
Absolute Maximum Ratings TC = 25oC,.TUnless W Otherwise WW 00Y.CO .TW
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W .CDissipation W
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W . 1 0 0Y M .T C W . 1 00 M .T W . 10 O M
W Operating O Storage Junction Temperature W Range . . . .O. . . . . . . .W . . . . . . . . . . . . TJW .C o
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.T W . T. . . . . . . . . . . . . W . 1 00Y M .T260 oC
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WW .100Y.C M.TW WW .100Y.C M.TW
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W Specifications
WW .100Y.C M.TW J
Electrical O T = 25oC, Unless
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W W WW 00Y.CO TEST
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.T W CONDITIONS W 0 Y.C TYP.TWMAX UNITS
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WW .100Y.C M.TW 00Y CESM.TWJ .100
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(Figure 20)
W . 10 0
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W O WW .100Y. C
WW .100Y.C .TW WW .100Y.C M.TW M.T
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M W O W J O
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Turn-On Energy (Note 3) EON2 O - 850 -
W
WW .100YE.C M.TW WW .100Y.C M.TW
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WW .100Y.C M.TW WW .100Y.C M.TW
W W . C O
W WW 00Y.CO .TW W WW
W 0 0 Y .T W .1 M
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W 00 .T W .1 M
W W.1 Y.COM W WW 00Y.CO
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2003 Fairchild Semiconductor Corporation
W
W .100 O M.T HGTG40N60A4 Rev. B2
W Y . C
W 00
W W.1
W
W
O M.T
Y. C W
HGTG40N60A4 W .100 O M.T
WW .100Y.C M.TW
W O
Electrical Specifications TJ = 25oC, Unless
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OMSYMBOL W O
PARAMETER
0 0 Y.C .T W WWTEST .CONDITIONS
1 0 0Y.C M.TW MIN TYP MAX UNITS
W .1 O M W .C O
Current Turn-On Delay Time
WW .100Y.C M .TW IIGBT= and
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125 Co
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W - 27 - ns
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WW .100Turn-On
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WW .100Y.C M.TW WW .100Y.C M.TW M.T
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Typical Performance Curves W O W C O
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W Unless Otherwise Specified
WW .100Y.C M.TW WW .100Y.C M.TW M .TW
W O W O
80 W
W .CO .TW WW .100Y.C M.T225 W WW .100Y.C M.TW
00Y
ICE, COLLECTOR TO EMITTER CURRENT (A)

W . 1 M oC, R = 2.2,
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WWPACKAGE W M.T
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WW .100Y.C M.TW
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WW .100Y.C M.TW WW .100Y.C M.TW
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FIGURE 1. DC COLLECTOR
W W CURRENT Y . C Ovs CASE
W W WW FIGURE 0 Y .C2.OMINIMUM .T W SWITCHING SAFE
W 0 0 Y.C AREA.TW
TEMPERATUREW 00 .T .10 M .1 M
W W.1 Y.COM W WW 00Y.CO .TW W WW 00Y.CO .TW
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WW .100Y W W .100 .T W 00 .T
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2003 Fairchild Semiconductor Corporation
W W .C O HGTG40N60A4 Rev. B2

W 00 Y
W W.1
W
W
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Y. C W
HGTG40N60A4 W .100 O M.T
WW .100Y.C M.TW
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WW (Continued) .CO .TW
Typical Performance CurvesMUnless .TWOtherwise Specified . 1 00Y M
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W W WW 00Y.CO .TW
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tSC , SHORT CIRCUIT WITHSTAND TIME (s)


W

ISC, PEAK SHORT CIRCUIT CURRENT (A)


390V, RW o
W W 0 .T G = 2.2, TJ = 125 C
fMAX, OPERATING FREQUENCY (kHz)

W .10 0 .T T
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200
W W WW 00Y.CO .75 T W W 1000
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W. 1 OMfMAX1 = (P - P d(OFF)I
f + t
W ) O W O
WW6 .100Y.C M.TW
d(ON)I

WW .100Y.C M MAX2
.T W D C) / (EON2 WW + EOFF)
. 1 0 0Y.C M.TW
WW 00Y.CO .TW
600
W W Y .C O PC = CONDUCTION DISSIPATION
W W WW 00Y.CO .TW W
W 00 .T o
(DUTY FACTOR = 50%)
.1 OM .1 M
W.1 Y.CORM WW 00Y.CO .TW
tSC
JC = 0.2 C/W, SEE NOTESWW . C
W W Y W W
W .100 M.T
4 400
W .100 M.T W O W .1 OM
W O Y. C W Y .C W
WW .10010Y.C MR.GT=W 2.2, L = 200H, WVW CE = 390V
. 100 M .TW W .100 M.T
W O W O 2
W W .C O 200
W Y
3 .C W 10 W W 0 Y40.C T
70
. W W10 11 00Y 12 13 .TW14 15 16
W 00 T
M, .COLLECTOR .10 (A) OM . 1 M
W W.1 Y.COICE TO EMITTER W
WCURRENT Y .C W W WW VGE0, GATE 0 Y .CTOOEMITTER .TW
VOLTAGE (V)
W 0 0 .T W W 1 0 0 .T . 1 M
.1 OM W. OM WW4. SHORT O
WFIGURE
WW .100Y.CEMITTER
3. OPERATING
.T W FREQUENCY vs
W WCOLLECTOR 0 0Y.CTO .T W FIGURE
W . 1 0 0Y.CCIRCUIT M
W
.TWITHSTAND TIME
M CURRENT
W . 1 O M W O
W
WW .100Y.C M.TW
O
WW .100Y.C M.TW WW .100Y.C M.TW
W O W O
W
WW 80 .100Y.C M.TW
O
WW .100Y.C M.TW 80 WW .100Y.C M.TW
.C=O
ICE, COLLECTOR TO EMITTER CURRENT (A)
WW< 0.5%,
ICE, COLLECTOR TO EMITTER CURRENT (A)

WDUTY CYCLE .C O< 0.5%, VGE = 12V WW 00Y.CO .TW DUTY CYCLE
W 0VY 15V W
W W .1 = 250s OM.T
0 GE
W 70 PULSE Y
00 DURATIONM= .250s T W . 1 M
. 1 W O 70 PULSE DURATION W C
W60 WW 00Y.CO .TW WW .100Y.C M.TW WW .100Y. M .TW
. 1 M W O W O
WW .100Y.C M.TW
60
W WW 00Y.CO .TW WW .100Y.C M.TW
. 1 M W O W O
WW .100Y.C M.TW
50 50
W WW 00Y.CO TJ =.T125 WoC WW .100Y.C M.TW
W.1 Y.COM W WW TJ = 125oCY.CO
40
WW 00Y.CO .T 40
W W
W W
. 1 00 M .T W
W . 1 O M
W
W .100 O M.T
W O 30
WW .100Y. C
0Y.C M.TW
30
WW .100Y.C M.TW W W
TJ = 25oC .10 M .TW
O oC W O W O
.C J = .25ToW
W WTW
20
WW .100Y.C M.TW
20 T C
WW .100Y.CTJ = 150 .T W J = 150 C
o
. 1 00Y M
OM W O 10 W O
10 W
WW .100Y.C M.TW WW .100Y.C M.TW WW .100Y.C M.TW
W1.0W 1.2 001.4 O
0
0 0.2 W W 0.6 0.8
0.4 Y . C O
W 1.6 W
1.8 W2.0W 00Y.CO0 0 .T 0.2W 0.4 0.6 0.8 W 1
Y.C1.6 1.8.T2.0 W 2.2
W . 1
1.0
00 TO EMITTER M
1.2
.T 1.4
W . 1 O M W .
C O M
W
VCE, COLLECTOR
WW .100Y.C M.TW
O VOLTAGE (V)
WW .100Y.C M.TW CE
V , COLLECTOR
WW .100Y.
TO EMITTER VOLTAGE (V)
M.T
W
W O W O W W .C O
Y.C ON-STATE WW .100YFIGURE .C 6. .COLLECTOR
TW TOW 00Y VOLTAGE .TW
FIGURE 5. COLLECTOR WW .1TO 00EMITTER M .TW VOLTAGE M
EMITTER 1
W . ON-STATE
O M
W O
W
WW .100Y.C M.TW
O
WW .100Y.C M.TW WW .100Y.C M.TW
W W . CO W WW 00Y.CO .TW W WW 00Y.CO .TW
Y W
5500 W
RG = 2.2, L = 200H, V.CE
W
0
10= 390V OM. T
W.1 Y.RCGO
1800 M
200H, VCE = 390VW
W.1 Y.COM W
.C W = 2.2, L =W
W 00 .T
WW .100Y
EON2 , TURN-ON ENERGY LOSS (J)

W W 00 .T
EOFF, TURN-OFF ENERGY LOSS (J)

5000
W O M.T W .11600
.C OM W W.1 Y.COM W
4500
W .C W Y W W 00 .T
4000 TJ = W 125oC, VGE .=112V,00YVGE = 15VM.TW W
W .100
1400
O M.T W.1 Y.COM W
W O .C W
WW .100Y.C M.TW WW 1200 .100
Y
MJ .T
T = 125 W C, VGE = 12VWOR 15V .100
o
.T
3500
W O W C O W W .C OM
WW 1000.100Y. Y W
3000
WW .100Y.C M.TW M .TW W
W .100 O M.T
O W O .C
2500 W
WW .100Y.C M.TW WW 800 .100Y.C M.TW WW .100Y M.T
W
2000 W O W C O
1500
W
WW .100Y.C M.TW
O
WW .100Y.C M.TW
600
WW .100Y. M.T
W
W O W O W W .C O
WW .100Y.C M.TW T = 25oC, VW = 12V OR
400
1000
WW .100Y.C M.TW . 00Y
115V M .TW
200 W O W O
W .CVOGE = 15V WW .100Y.C M.TW WW .100Y.C
500 J GE
TJ W oC, V
W = 25 GE = Y
0 0 12V,
.T W
0 1
. 60 O M 80 0 W 10 Y20.CO 30 W W
0 10 20 30 40 WW 50 .C 70 W
0 40 50 W60 W 70 80
W 0 Y
0 (A) M.T W W . 0 0
1ICE , COLLECTOR M .T
ICE , COLLECTOR TO EMITTER CURRENT
W . 1 O W O TO EMITTER CURRENT (A)
WW .100Y.C M.TW WW .100Y.C M.TW
vs W O 8.W
O
FIGURE 7. TURN-ON ENERGY LOSS W
W
COLLECTOR
0 Y .CTO .T W FIGUREW
W TURN-OFF
0 0 Y.C ENERGY LOSS vs COLLECTOR TO
0 W. 1
EMITTER CURRENT
W.1 OM EMITTER CURRENT
WW .100Y.C M.TW WW
W O
WW .100Y.C M.TW
2003 Fairchild Semiconductor Corporation
W W . C O HGTG40N60A4 Rev. B2

W 00 Y
W W.1
W
W
O M.T
Y. C W
HGTG40N60A4 W .100 O M.T
WW .100Y.C M.TW
W
WW (Continued) .CO .TW
Typical Performance CurvesMUnless .TWOtherwise Specified . 1 00Y M
Y .C O
W W WW 00Y.CO .TW
0 .T
42
RG = 2.2, L = 200H, W VCE.1=0390V
.C OM W W.1120 YR.GC=O M L = 200H, VCE = 390V
2.2,
W
W Y W W 0 M.T
td(ON)I, TURN-ON DELAY TIME (ns)

40 W 0 0 .T 1
.1000
TJ = 25oC, TJ = 125oC, VGE W =.115V O M W C O
38
.TW WW .100Y.C M.TW WW .100Y. TJ =.T
M
WoC, TJ = 25oC, VGE = 12V
125
M W O W O
.CO36 WW .100Y.C M.TW WW 80.100Y.C M.TW

trI , RISE TIME (ns)


00Y 34M.TW
.1
WW 00Y.CO W WW 00Y.CO .TW W WW 00Y.CO .TW
W
W .1 32
O M. T
W.1 Y.COM W W W.1 Y.COM W
60
.C W W 00 .T
WW .100Y 30 M.TW W .100 .T W.1 Y.COM W
W C O W W .C OM W40
WW .100Y28 . W Y W W 00 .T
W O M.T
W
W .100 O M.T W W.1 Y.COM W
WW .100Y . C
WW .100Y.C M.TW W W20 .100 .T
26

W 24 O W oC,C O M.T W W .C OM
J W
oC,
Y. GE .TW Y W
WW .10022Y.C M.TW W .100 M.T
T = 25 T = 125 V = 15V
W 100
J
TJ = 25oC, TJ = 125oC, VGE = 15V
W O W . O M 0
W W .C O
WW .100Y.C ICE
0 10
TW
20 30
WW CURRENT
40 50 60
Y.C 70 80
W W0 10 0020 Y 30 .T40W 50 60 70 80
M , .COLLECTOR TO EMITTER W . 100 (A) OM.T W .1 , COLLECTOR
ICE C O MTO EMITTER CURRENT (A)
W
WW .100Y.C M.TW
O
WW .100Y.C M.TW WW .100Y. W
M.Tvs COLLECTOR TO
W O W O
W FIGURE 9. O
TURN-ON DELAY TIME vs COLLECTOR
WW .100Y.C M.TW
TO FIGURE
WW EMITTER
10. TURN-ON
Y.C
RISE TIME
.TW
WW .100Y.CEMITTER M
W
.TCURRENT W . 100 CURRENT O M
W O
W
WW .100Y.C M.TW
O
WW .100Y.C M.TW WW .100Y.C M.TW
W O W O
W
WW190 .100Y.C M.TW
O
WW .100Y.C M.TW 70 WW .100Y.C M.TW
W RG = 2.2, .C LO = 200H, VCE = 390V WW 00Y.CO .TW RG = 2.2,
W WLW = 200H, VY
0 CO
CE. = 390V W
W Y W W 0 M.T
td(OFF)I , TURN-OFF DELAY TIME (ns)

W . 1 00 M .T W . 1 O M 65 W .1 O
180 W O WW TJ =.1125 C
Y.V = 12V .OR
WW .100Y.C M.TW WW .100Y.C M.TW 60 00oC, GE OM
TW 15V
W O W .C O W W Y .C W
C W
tfI , FALL TIME (ns)

W . W 00 Y W W 10 0 .T
W 170
. 1 00Y M .T W
WoC . 1 O M .T 55 W . O M
W WW 00Y.CO VGE.T= W 12V, VGE = 15V, W TJ =W125 0 0Y.C M.TW WW .100Y.C M.TW
. 1
160
W W. 1
.C OM
W WW 00Y.CO .TW
50
W WW 00Y.CO .TW
W 00 Y .T W .1 M 45 .1 M
W W.1 Y.COM W WW 00Y.CO .TW W WW 00Y.CO .TW
150 W
W 00
W.1 Y.COVM
.T oC W.
1
C OM40 W WV.1 = 12VYOR .CO
M
. .TW
oC,
W GE = 12V OR 15V, TJ = 25 W Y W TJW = 25 0 15V
140 W 00 .T W W . 1 00 M .T GE
. 1 0 M
. 1 M W O W O
O WW .100Y.C M.TW
35
W
WW .100Y.C M.TW WW .100Y.C M.TW
W O
130
0 10W 20
W Y
30 .C O40 50 60
W 70WW80
W
0 Y .CO30 0 .TW 10 20 W30W 40 0050 Y.C 60 .T70W 80
W 00 .T .1 0 M . 1 OM
W W.1 YTO
ICE , COLLECTOR
.C OM CURRENT (A)
EMITTER
W WW 00Y.CO .TW ICE , COLLECTOR W
W TO W Y.C (A).TW
EMITTER CURRENT
0 0
W 00 .T W .1 M .1 M
W W.1DELAYYTIME . C OM WW 00Y .CO 12..T W W WW 0TO0Y .CO .TW
FIGURE 11. TURN-OFF vs W
COLLECTOR TO W FIGURE FALL TIME vs COLLECTOR EMITTER
W
EMITTERW .100
CURRENT OM
.T W.1 Y.COM CURRENT W W.1 Y.COM W
.C W W
W W
.100
Y
M.T
W W
W .100 O M.T
W
W .100 OM
.T
W O C W .C W
WW .100Y.C M.TW WW .100Y. M .TW W .100
Y
M.T
O W O W .C O
WW 010V 0Y.C M.TW WW .11600YIG(REF) .C WoW .100Y W
ICE, COLLECTOR TO EMITTER CURRENT (A)

400
DUTY CYCLE W < 0.5%, VCE = 1 =M .TRW
1mA, L = 7.5, TC = 25 C
W O M.T
.
VGE, GATE TO EMITTER VOLTAGE (V)

W O C
350 PULSE DURATION = 250s W
WW .100Y.C M.TW
O
WW .14100Y.C M.TW WW .100Y. M .TW
W O W O
300 W
WW .100Y.C M.TW
O
WW 12.100VY .C
CE = 600V .TW WW .100Y.C M.TW
W O M W O
W O
WW 10 .100Y.C M.TW WW .100Y.C M.TW
VCE = 400V
250
WW .100Y.C M.TW
W W .C O
W WW Y .CO .TW W WW 00Y.CO .TW
200
TJ = -55 C .100
W o Y o .T
W 8
.10 0 M .1 M
W W .C OMC
TJ = 125
W W6 W 00Y.VCCEO= 200V.TW W WW 00Y.CO .TW
150
W 00 Y .T W .1 M
TJ = 25oC
W.1 Y.COM W W W.1 Y.COM W WW 00Y.CO .TW
100 W W 4 0 .T W
W 00
W.1 Y.COM W
.T 0
W.1 Y.COM W W W.1 Y.COM
W
50 W W
.100 M.T
W2
W .100 O M.T
W
W .100
W O Y.C W
0 WW 9 .100Y10.C M.11 TW W0 W 50 .100100
0
M .T200W W
6 7 8
W C O W W .C O
150 250 300 350 400
W Y . W W 0 Y .T W
VGE, GATE TO EMITTER W VOLTAGE
00
W.1 Y.COM W
(V) .T .10 Q G , GATE
M CHARGE (nC)

W W WW 00Y.CO
W 00 .T W.114. GATE CHARGE WAVEFORMS
FIGURE 13. TRANSFER CHARACTERISTIC
W W.1 Y.COM W FIGURE
W
W 00 .T W
W W.1 Y.COM W
2003 Fairchild Semiconductor Corporation
W
W .100 O M.T HGTG40N60A4 Rev. B2
W Y .C
W 00
W W.1
W
W
O M.T
Y. C W
HGTG40N60A4
W .100 O M.T
WW .100Y.C M.TW
W
WW (Continued) .CO .TW
Typical Performance CurvesMUnless .TWOtherwise Specified . 1 00Y M
Y .C O
W W WW 00Y.CO .TW
.100 .T W.1 100 YT.C

ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ)


OMo = 200H
ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ)

6
TJ = 125oC, L = 200H, W W .C O=M W J = 125 C, L W
W VCE = 390V,
0 Y V GE 15V
.T W W 0 0
.1 VCE =O390V, M.T
ETOTAL = EON2 + EOFF W.10 O M W VGE = 15V
WW .100EYTOTAL C
. = EON2
5
.TW WW .100Y.C M.TW M .T+W EOFF
M W O W O
.CO 4 .TW WW 10.100Y.CI = 80A
I = 80A
WW .100Y.C M.TW .TW
CE

.1 00Y M W O W CE OM
WW 00Y.CO .TW WW .100Y.C M.TW WW .100Y.C M.TW
W. 1
.C 3OM
WW 00Y.CO .TW W WW 00Y ICE.C= O40A
W
WW
. 10 0 Y
M .T W W
W . 1 O M W . 1 O M.T
W O .C WW1 .100Y. C
WW .100Y.2C M.TW W=W
ICE 40A
1 00Y M .TW M .TW
W . O W O
O WW .10CE 0Y.C M.TW
W I = 20A
WW .100Y1.C M.TW WW .100Y.C M.TW
W O W O
W
WW .100Y.C M.TW
O ICE = 20A
WW .100Y.C M.TW WW .100Y.C M.TW
0.1 WW
O
W W 0 Y.CO W W W W
0 Y .CO 150.TW W 0 0 Y.C 10 .TW
W .100
25
M.TTC , CASE TEMPERATURE
50 75 100
.10 125 1
W. 1 OM 100 500
W C O W W (oC) .C OM W YRG.C, GATE RESISTANCEW ()
WW .100Y. W Y W W 00 .T
W O M.TSWITCHING LOSS vs
W
W .100 O M.T W W.1 SWITCHING .C OMLOSS vs GATE RESISTANCE
W .C Y .TW
WW .100Y.CTEMPERATURE
FIGURE 15. TOTAL CASE FIGURE 16. TOTAL
M .TW W . 1 00Y M .TW W
W . 100 O M
W O
W
WW .100Y.C M.TW
O
WW .100Y.C M.TW WW .100Y.C M.TW
W O W O
W
WW .100Y.C M.TW
O
WW .100Y.C M.TW WW .100Y.C M.TW
WW 00DUTY O
14 W O= 1MHz WW 00Y.CO .TW 2.4 Y.C CYCLE .<T0.5%, W VGE = 15V
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
W Y .C W W W
W . 1 00
FREQUENCY
M .T W . 1 O M W .1 PULSE DURATIONO M
12 W O WW .100Y. C = 250s, TJ = 25oC
WW .100Y.C M.TW WW .100Y.C M.TW 2.3 M .TW
W O
WW 00Y.CO .TW WW .100Y.C M.TW
C, CAPACITANCE (nF)

10 W
W
W
0 Y .CO .TW W
0
W.1 Y.COM W .1 M WW 00Y.CO .TW
8WW W WW 00Y.CO .T2.2 W W
W
0
.10CIES OM. T
W.1 Y.COM W W W.1 Y.COMICE = 80A W
.C W
6 W
W
. 1 00Y M .TW W
W . 100 O M .T W
W .100 O M.T
W O 2.1
WW .100Y. C
WW .100Y.C M.TW WW .100Y.C M.TW ICE =.T
M
40AW
W O W O
.CO .TW WW .100Y.C M.TW
4 W
WCW 00Y WW .100Y.C M 2.0.TW
OES
. 1 M WW 00Y.CICE O = 20A
2 W .CO .TW WW 00Y.CO .TW W W
CRES W W
.10 0 Y
M
W
W .1 O M W . 1 O M.T
W O W . C
WW100 .100Y.C M Y 14 .T15W 16
1.9
0
0 10W 20
W 30 0040Y.C 50 60.TW70 80 90 8 .TW 9 10 W11 12 10013
. M
VW W . 1
CE, COLLECTOR .CTO
M
OEMITTER VOLTAGE (V) W W Y .C O
W VGE, GATEW TOW
W
EMITTER VOLTAGE 0 Y .CO(V) .TW
W 00 Y .T W W 0 0 .T .1 0 M
W.1 Y.COM W W W.1 Y.COM W WW 00Y.CO .TW
W
FIGURE 17. CAPACITANCE W 0 COLLECTOR .T TO EMITTER W 0 T
0 FIGURE 18.. COLLECTOR TO EMITTER W 1
.ON-STATE M vs
0vs W.1 Y.COM GATE
VOLTAGE
VOLTAGE W W.1 Y.COM W W W TO EMITTER W WW 00Y.CO .TW
VOLTAGE
W 00 .T W 00 .T .1 M
W.1 Y.COM W W W.1 Y.COM W WW 00Y.CO .TW
W W 00 .T W
W
W .100 O M.T W.1 Y.COM W W W.1 Y.COM W
.C W W 00 .T
WW .100Y
ZJC , NORMALIZED THERMAL RESPONSE

W W .100 .T
W O M.T W .C OM W W.1 Y.COM W
C W W
100 WW .100Y. M.T
W W .100
Y
M.T
W 00
W.1 Y.COM W
.T
W O W . C O W
WW .100Y
0.50
WW .100Y.C M.TW M.T
W W
W .100 OM
.T
W O W C O W .C W
0.20 WW .100Y.C M.TW WW .100Y. M .TW t1 W .100
Y
M.T
O W O W .C O
0.10
W
WW .100Y.C M.TW WW .100Y.C MP.DTW WW .100Y M.T
W
10-1 W O W CO
0.05 W
WW .100Y.C M.TW
O
WW .100Y.C M.TW t2 WW .100Y. M.T
W
W O W O
W O
WW .100PEAK Y.C TJ = (PD.TX W
DUTY FACTOR, D = t / t W Y.C .TW
WW .100Y.C M.TW
1 2
0.02
M ZJC X RJC) + W TC
W .100 OM
W O
O WW .100Y.C
0.01
W
WW .100Y.C M.TW WW .100Y.C M.TW
SINGLE PULSE
W W .C O
W WW 00Y.CO .TW W WW
10-2 -5
10-4W 0 Y .T W
0 -3
W.1 10Y.COM W 10 W.110 Y.COM 10W
10 -2 -1 0 101
W W W 0 .T
W 00 1
W.1 Y.COM W
t , .T
RECTANGULAR PULSE DURATION (s)
.10 M
W W WW 00Y.CO
FIGURE 19.W 00 .T .1
W W.1 TRANSIENT
NORMALIZED
Y .C OM THERMAL RESPONSE,
W W WJUNCTION TO CASE
W 0 .T W
.10 M
W WW 00Y.CO .TW
2003 Fairchild Semiconductor Corporation
W W.1 Y.COM HGTG40N60A4 Rev. B2

W 00
W W.1
W
W
O M.T
Y. C W
HGTG40N60A4 W .100 O M.T
WW .100Y.C M.TW
W O
Test Circuit and Waveforms M.TW WW .100Y.C M.TW
O W O
0 0 Y.C .T W WW .100Y.C M.TW
W.1 OM W O
WW .100Y.C HGT1Y40N60A4D .T W WW .100Y.C M.TW
M W O
W W WW 00Y.CO .TW WW .100Y.C M.TW
M . T . 1 M W O
Y.CO .TW W WW 00Y.CO .TW WW .100Y.C M.TW 90%
0
.10 M W.1 OM W Y.C
O
WW 00Y.CO .TW WW .100Y.C M.TW WW VGE
. 1 0 0 M.T
W 10%
. 1 O M W O W . C O
W WW .100Y
E
WW .100Y.C M.TW WW L = 200H Y.C .TW M.T EOFF
W ON2

W . 100 O M W C O
W O
WW .100Y.C M.TW
W Y. .TW
WW .100Y.C M.TW W 100
VCE
W O W . O M
W O G WW .100Y .C
WW .100Y.C M.TW
R = 2.2
WW .100Y.C M.TW 90%
M .TW
W O W O
W O
WW .+100Y.C M.TW
W Y.C W
WW .100Y.C M.TW ICEW
W . 100 10% OM.T
W O W O W .C
Y.C
t trI
WW - .100DD 00Y tfI M.TW
V = 390V
WW .100Y.C M.TW
d(OFF)I
M .TW W
W . 1 O
W O
O WW .100Y.C M.TW
td(ON)I
W
WW .100Y.C M.TW WW .100Y.C M.TW
W CIRCUIT O WW 21.0SWITCHING O
W FIGURE 20.
WW .100Y.C M.TW
O INDUCTIVE SWITCHING
WW .100Y.C M.TW
TEST
WFIGURE
. 1 0Y.C MTEST .TWWAVEFORMS
W O W O
W
WW .100Y.C M.TW
O
WW .100Y.C M.TW WW .100Y.C M.TW
W O W O
Handling
W O
Precautions for IGBTs WW .100Y.C M.TWOperating WWFrequency Y.C Information W
WW .100Y.C M.TW W . 1 0 0
O M.T
W O .C
W WW 00Y.CO .TW
Insulated Gate Bipolar Transistors are susceptible
WW of.1energy
to gate-
0 0Y.C M.TW
Operating
WW .100Y
frequency information for
M
a typical
.TW
device
insulation.1 damage by the M electrostatic discharge (Figure 3) is presented W as a guide Ofor estimating device
W
through
Wthe devices. Y .C OWhen W
handling these W WW care
devices, 0 Y .CO .Tperformance W W
for
Wspecific
a 0 0 Y.C
application. .T
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W.1 Y.COM W W W.1
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TRADEMARKS OM WW 00Y.CO .TW
0 Y.C .T W trademarks WFairchild
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W W 0 .T
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W .100 QuietOSeries
WFACT M.T LittleFET WW.10 Power247 .C OM SuperSOT-6
WActiveArray W W 0Y .C T WMICROCOUPLER W 0 0 Y .
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W 00 DISCLAIMER .T W 0 0 .1 M
W.1 YFAIRCHILD OM SEMICONDUCTORWRESERVES W.1 YTHE M
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W .C W W 0 W MAKE CHANGES W WITHOUT
1 0 0 YFURTHER TW TO ANY
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FAIRCHILD DOES O M
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PRODUCT Y.C DEFINITIONS W W W
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WW .100Y.C M.TW
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