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LND150

N-Channel Depletion-Mode
MOSFET
Ordering Information
Order Number / Package Product marking for TO-243AA:
BVDSX / RDS(ON) IDSS
BVDGX (max) (min) TO-92 TO-243AA* Die
LN1E
500V 1.0K 1.0mA LND150N3 LND150N8 LND150ND
Where = 2-week alpha date code
* Same as SOT-89. Product shipped on 2000 piece carrier tape reels.

Features Advanced DMOS Technology


ESD gate protection The LND1 is a high voltage N-channel depletion mode (normally-
on) transistor utilizing Supertexs lateral DMOS technology. The
Free from secondary breakdown
gate is ESD protected.
Low power drive requirement
The LND1 is ideal for high voltage applications in the areas of
Ease of paralleling normally-on switches, precision constant current sources, volt-
Excellent thermal stability age ramp generation and amplification.

Integral source-drain diode


High input impedance and low CISS

Package Options
Applications
Solid state relays
Normally-on switches
Converters
Power supply circuits
Constant current sources
S
Input protection circuits G
S
D

TO-243AA SGD

Absolute Maximum Ratings (SOT-89) TO-92


Drain-to-Source Voltage BVDSX
Drain-to-Gate Voltage BVDGX
Gate-to-Source Voltage 20V
Operating and Storage Temperature -55C to +150C
Soldering Temperature* 300C
Note: See Package Outline section for dimensions.
* Distance of 1.6 mm from case for 10 seconds.

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
1 refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products,
LND150

Thermal Characteristics
Package ID (continuous)* ID (pulsed) Power Dissipation jc ja IDR IDRM*
@TA = 25C C/W C/W
TO-92 30mA 30mA 0.74W 125 170 30mA 30mA
TO-243AA 30mA 30mA 1.2W 15 78
30mA 30mA
* ID (continuous) is limited by max rated Tf.
Mounted on FR4 Board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate.

Electrical Characteristics (@ 25C unless otherwise specified)


Symbol Parameter Min Typ Max Unit Conditions
BVDSX Drain-to-Source Breakdown Voltage 500 V VGS = -10V, ID = 1.0mA
VGS(OFF) Gate-to-Source OFF Voltage -1.0 -3.0 V VDS = 25V, ID = 100nA
VGS(OFF) Change in VGS(OFF) with Temperature 5.0 mV/C VDS = 25V, ID = 100nA
IGSS Gate Body Leakage Current 100 nA VGS = 20V, VDS = 0V
ID(OFF) Drain-to-Source Leakage Current 100 nA VGS = -10V, VDS = 450V
100 A VGS = -10V, VDS = 0.8V max rating
TA =125C
IDSS Saturated Drain-to-Source Current 1.0 3.0 mA VGS = 0V, VDS = 25V
RDS(ON) Static Drain-to-Source ON-State Resistance 850 1000 VGS = 0V, ID = 0.5mA
RDS(ON) Change in RDS(ON) with Temperature 1.2 %/C VGS = 0V, ID = 0.5mA

GFS Forward Transconductance 1.0 2.0 m VGS = 0V, ID = 1.0mA
CISS Input Capacitance 7.5 10
COSS Output Capacitance 2.0 3.5 pF VGS = -10V, VDS = 25V
f = 1 MHz
CRSS Reverse Transfer Capacitance 0.5 1.0
td(ON) Turn-ON Delay Time 0.09
tr Rise Time 0.45 VDD = 25V, ID = 1.0mA,
s RGEN = 25
td(OFF) Turn-OFF Delay Time 0.1
tf Fall Time 1.3
VSD Diode Forward Voltage Drop 0.9 V VGS = -10V, ISD = 1.0mA
trr Reverse Recovery Time 200 ns VGS = -10V, ISD = 1.0mA
Notes:
1. All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.

Switching Waveforms and Test Circuit VDD

0V RL
90% PULSE
INPUT GENERATOR
OUTPUT
-10V 10%
Rgen
t(ON) t(OFF)

td(ON) tr td(OFF) tF
D.U.T.
VDD INPUT
10% 10%
OUTPUT
0V 90% 90%

2
LND150

Typical Performance Curves


Output Characteristics Saturation Characteristics
6 6

VGS = 1.0V
5 VGS =1.0V 5

4 4
ID (milliamps)

ID (milliamps)
3 0.5V 3 0.5V

2 0V 2 0V

1 1
-0.5V -0.5V
-1.0V -1.0V
0 0
0 250 500 0 1 2 3 4 5
VDS (volts) VDS (volts)

Transconductance vs. Drain Current Power Dissipation vs. Ambient Temperature


10 2

VDS = 400V

8
TA = -55C
GFS (millisiemens)

TO-243AA
6
PD (watts)

TA = 25C 1

4 TO-92
TA = 125C

0 0
0 2 4 6 8 10 0 25 50 75 100 125 150
ID (milliamps) TA (C)

Maximum Rated Safe Operating Area Thermal Response Characteristics


100 1.0

TO-243AA (DC)
Thermal Resistance (normalized)

TO-243AA (DC)
0.8

TO-243AA
10 TO-92 (DC)
TA = 25C
ID (milliamps)

TA = 25C 0.6
PD = 1.2W

0.4
1

0.2 TO-92
P D = 1W
T C = 25C
0.1 0
1 10 100 1000 0.001 0.01 0.1 1.0 10
VDS (volts) tP (seconds)

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LND150

Typical Performance Curves


BVDSS Variation with Temperature ID vs. RSOURCE
1.4
VGS = -5V
1.1 ID
1.2
25C LND1
1.0 125C
BVDSS (normalized)

ID (milliamps)
RSOURCE
0.8
1.0
0.6

0.4

0.2
0.9

0.0
-50 0 50 100 150 10 100 1K 10K 100K
Tj (C) RSOURCE (ohms)

Transfer Characteristics VGS(OFF) and RDS Variation with Temperature


10 1.8

2.0
VDS = 400V
1.6
TA = -55C RDS(ON) @ ID = 1mA
VGS(OFF) (normalized)

RDS(ON) (normalized)
1.6
TA = 25C
ID (milliamps)

1.4
TA = 125C
5 1.2

1.2

0.8

1.0 VGS(OFF) @ 100nA


0.4

0 0.8
-1 0 1 2 3 -50 0 50 100 150
VGS (volts) Tj (C)

Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics


10 10
VGS = -10V

CISS 8.7pF
5
C (picofarads)

VGS (volts)

VDS = 20V 40V 60V


5

0
COSS

CRSS
0 -5
0 10 20 30 40 0 0.1 0.2 0.3
VDS (volts) QC (nanocoulombs)

08/16/06

1235 Bordeaux Drive, Sunnyvale, CA 94089


TEL: (408) 744-0100 FAX: (408) 222-4895
2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
4 www.supertex.com