MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MAC15
Triacs Series
Silicon Bidirectional Triode Thyristors
MAC15A
. . . designed primarily for full-wave ac control applications, such as solid-state relays,
motor controls, heating controls and power supplies; or wherever full-wave silicon
Series
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering. TRIACs
15 AMPERES RMS
• Blocking Voltage to 800 Volts
200 thru 800 VOLTS
• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
• Gate Triggering Guaranteed in Three Modes (MAC15 Series) or Four Modes MT2 MT1
(MAC15A Series)
G

CASE 221A-04
(TO-220AB)
STYLE 4

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)

Rating Symbol Value Unit
Peak Repetitive Off-State Voltage(1) VDRM Volts
(Gate Open, TJ = –40 to +125°C) MAC15-4, MAC15A4 200
MAC15-6, MAC15A6 400
MAC15-8, MAC15A8 600
MAC15-10, MAC15A10 800
Peak Gate Voltage VGM 10 Volts
On-State Current RMS IT(RMS) 15 Amps
Full Cycle Sine Wave 50 to 60 Hz (TC = +90°C)
Circuit Fusing (t = 8.3 ms) I2t 93 A2s
Peak Surge Current ITSM 150 Amps
(One Full Cycle, 60 Hz, TC = +80°C)
Preceded and followed by rated current
Peak Gate Power (TC = +80°C, Pulse Width = 2 µs) PGM 20 Watts
Average Gate Power (TC = +80°C, t = 8.3 ms) PG(AV) 0.5 Watt
Peak Gate Current IGM 2 Amps
Operating Junction Temperature Range TJ –40 to +125 °C
Storage Temperature Range Tstg –40 to +150 °C

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 2 °C/W
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.

REV 1

Motorola Thyristor Device Data 3–59

  
  

ELECTRICAL CHARACTERISTICS (TC = 25°C, and either polarity of MT2 to MT1 Voltage, unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
Peak Blocking Current IDRM
(VD = Rated VDRM, Gate Open) TJ = 25°C — — 10 µA
TJ = 125°C — — 2 mA
Peak On-State Voltage VTM — 1.3 1.6 Volts
(ITM = 21 A Peak; Pulse Width = 1 or 2 ms, Duty Cycle p 2%)
Gate Trigger Current (Continuous dc) IGT mA
(VD = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+) — — 50
MT2(+), G(–) — — 50
MT2(–), G(–) — — 50
MT2(–), G(+) “A” SUFFIX ONLY — — 75
Gate Trigger Voltage (Continuous dc) VGT Volts
(VD = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+) — 0.9 2
MT2(+), G(–) — 0.9 2
MT2(–), G(–) — 1.1 2
MT2(–), G(+) “A” SUFFIX ONLY — 1.4 2.5
(VD = Rated VDRM, RL = 10 k Ohms, TJ = 110°C)
MT2(+), G(+); MT2(–), G(–); MT2(+), G(–) 0.2 — —
MT2(–), G(+) “A” SUFFIX ONLY 0.2 — —
Holding Current (Either Direction) IH — 6 40 mA
(VD = 12 Vdc, Gate Open)
(IT = 200 mA)
Turn-On Time tgt — 1.5 — µs
(VD = Rated VDRM, ITM = 17 A)
(IGT = 120 mA, Rise Time = 0.1 µs, Pulse Width = 2 µs)
Critical Rate of Rise of Commutation Voltage dv/dt(c) — 5 — V/µs
(VD = Rated VDRM, ITM = 21 A, Commutating di/dt = 7.6 A/ms,
Gate Unenergized, TC = 80°C)

FIGURE 1 – RMS CURRENT DERATING FIGURE 2 – ON-STATE POWER DISSIPATION

130 20 α = 180°
α = 30°
PAV , AVERAGE POWER (WATTS)

TJ ≈ 125°C 120°
TC, CASE TEMPERATURE ( °C)

120 16
α = 60° dc 90°
α = 90° α
110 12 60°

α 30°
α = 180°
100 8 α = CONDUCTION ANGLE
dc
α
90 4
α TJ ≈ 125°
α = CONDUCTION ANGLE
80 0
0 2 4 6 8 10 12 14 16 0 2 4 6 8 10 12 14 16
IT(RMS), RMS ON-STATE CURRENT (AMP) IT(RMS), ON-STATE CURRENT (AMP)

3–60 Motorola Thyristor Device Data

  
  


FIGURE 3 – TYPICAL GATE TRIGGER VOLTAGE FIGURE 4 – TYPICAL GATE TRIGGER CURRENT
1.8 50
Vgt, GATE TRIGGER VOLTAGE (VOLTS)

OFF-STATE VOLTAGE = 12 V OFF-STATE VOLTAGE = 12 V

IGT , GATE TRIGGER CURRENT (mA)

1.6
30
1.4
QUADRANT 4 20
1.2

1.0

0.8 1 10 1
2
QUADRANTS 2 QUADRANT
0.6 7.0 3
3 4
0.4 5.0
–60 –40 0 20 40 60 80 100 120 140 –60 –40 –20 0 20 40 60 80 100 120 140
–20
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

FIGURE 5 – ON-STATE CHARACTERISTICS FIGURE 6 – TYPICAL HOLDING CURRENT

100 20
GATE OPEN
70
IH , HOLDING CURRENT (mA) MAIN TERMINAL #1
50 POSITIVE
TJ = 25°C 10
125°C
30 7.0

20
5.0
i TM , INSTANTANEOUS FORWARD CURRENT (AMP)

MAIN TERMINAL #2
POSITIVE
10 3.0

7 2.0
–60 –40 –20 0 20 40 60 80 100 120 140
5
TJ, JUNCTION TEMPERATURE (°C)

2 FIGURE 7 – MAXIMUM NON-REPETITIVE SURGE CURRENT

300
TSM , PEAK SURGE CURRENT (AMP)

1 200

0.7

0.5
100

0.3
70

0.2 50
TC = 80°C
f = 60 Hz
Surge is preceded and followed by rated current
0.1 30
0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4 4.4 1 2 3 5 7 10
vTM, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) NUMBER OF CYCLES

Motorola Thyristor Device Data 3–61

  
  


FIGURE 8 – THERMAL RESPONSE

1
r(t), TRANSIENT THERMAL RESISTANCE

0.5

0.2
(NORMALIZED)

ZθJC(t) = r(t) • RθJC

0.1

0.05

0.02

0.01
0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1k 2k 5k 10 k
t, TIME (ms)

3–62 Motorola Thyristor Device Data

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