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Question 1: Define the following terms: (6 marks)

a) Three phase rectification: Is a rectification process of 3phase waveforms where an


electrical device is used to converts 3 phase alternating current (AC), which
periodically reverses direction, to direct current (DC), which flows in only one
direction.
b) Thyristors: Is a four-layered semiconductor rectifier in which the flow of current
between two electrodes is triggered by a signal at a third electrode.
c) SMPS: Switch-mode power supply is an electronic power supply that incorporates a
switching regulator to convert electrical power efficiently.

Question 2: Distinguish between delta supply and star supply in relation to three-
phase systems. Include diagrams in your distinction. (8 marks)

Question 3: Three inductive loads each of resistance 75 Ω and inductance 230 mH


are connected in delta to a 415V, 50 Hz, 3-phase supply. Determine (9 marks)
a) the phase voltage : phase voltage, = 415 V
b) the phase current

Phase impedance𝑍𝑃 = √𝑅 2 + 𝑋𝐿 2

= √(75)2 + (2𝜋 × 50 × 230 × 10−3 )2

= √(75)2 + (72.25)2
= 104.13 𝑂ℎ𝑚𝑠
𝑽𝒑 𝟒𝟏𝟓
Phase current: 𝒁 = 𝟏𝟎𝟒.𝟏𝟑 = 𝟑. 𝟗𝟖 𝑨
𝒑

c) the line current


𝐼𝐿= √3 × 𝐼𝐿 𝐼𝐿= √3 × 3.98 𝐼𝐿= 6.89 A
Question 4: Explain the principle of operation, with the aid of diagrams: (25 marks)
a) MOSFET: The working principle of MOSFET depends up on the MOS
capacitor. The MOS capacitor is the main part. The semiconductor surface
below the oxide layer and between the drain and source terminal can be
inverted from p-type to n-type by applying a positive or negative gate
voltages respectively. When a positive voltage is applied to the gate, the
holes present beneath the oxide layer experience repulsive force and the
holes are pushed downward with the substrate. The depletion region is
populated by the bound negative charges, which are associated with the
acceptor atoms. The positive voltage also attracts electrons from the n+
source and drain regions in to the channel. The electron reach channel is
formed. Now, if a voltage is applied between the source and the drain,
current flows freely between the source and drain gate voltage controls the
electrons concentration the channel. Instead of positive if apply negative
voltage a hole channel will be formed beneath the oxide layer. Now, the
controlling of source to gate voltage is responsible for the conduction of
current between source and the drain. If the gate voltage exceeds a given
value, called the three voltage only then the conduction begins.

a) TRIAC: is a three terminal, four layer, bi-directional semiconductor device that


controls AC power. The triac can be turned on by applying the gate voltage
higher than break over voltage. When the voltage applied is less than the break
over voltage, we use gate triggering method to turn it on.

There are four different modes of operations:


When MT2 and Gate being Positive with Respect to MT1 When this happens,
current flows through the path P1-N1-P2-N2. Here, P1-N1 and P2-N2 are
forward biased but N1-P2 is reverse biased. The triac is said to be operated in
positively biased region. Positive gate with respect to MT1 forward biases P2-
N2 and breakdown occurs.
When MT2 is Positive but Gate is Negative with Respect to MT1 The current
flows through the path P1-N1-P2-N2. But P2-N3 is forward biased and current
carriers injected into P2 on the triac.
When MT2 and Gate are Negative with Respect to MT1 Current flows through
the path P2-N1-P1-N4. Two junctions P2-N1 and P1-N4 are forward biased but
the junction N1-P1 is reverse biased. The triac is said to be in the negatively
biased region.
When MT2 is Negative but Gate is Positive with Respect to MT1 P2-N2 is
forward biased at that condition. Current carriers are injected so the triac turns
on.
Sensitivity of triggering in mode 2 and 3 is high and if marginal triggering
capability is required, negative gate pulses should be used. Triggering in mode
1 is more sensitive than mode 2 and mode 3.

b) SCR: When the anode voltage voltage is made positive with respect to the
cathode, the junctions J1 and J3 are forward biased but the middle junction J2
is reverse biased and only a small leakage current flows from anode to cathode
due to the mobile charges. The junction J2, because of the presence of
depletion layer does not allow any current to flow through the device. The
leakage current is insufficient to make the device conduct. The depletion layer
mostly of immovable charges does not constitute any flow of current. The SCR
is then said to be in the forward blocking or OFF sate condition and the
leakage current is known as OFF state current ID.
When the cathode voltage is positive with respect to the anode, the middle
junction J2 becomes forward biased but the two outer junctions J1 and J3
becomes reverse biased. This is like two series connected diodes with reverse
voltage across them. The junction J1 and J3 do not allow any current to flow
through the device. Only a very small leakage current may flow because of the
drift the charges. This leakage current is again insufficient to make the device
conduct. The SCR is in the reverse blocking state or OFF state and a reverse
leakage current known as reverse current IR flows through the device. The
width of the depletion layer at the junction J2 decreases with increase in anode
to cathode voltage (since the width is inversely proportional to the voltage). If
the anode to cathode voltage VAK is kept on increasing sufficiently to a large
value, a stage comes when the depletion layer at J2 vanishes. The reverse
biased junction J2 will breakdown due to the large voltage gradient across its
depletion layer. This is known as avalanche breakdown and the corresponding
voltage is called forward breakdown voltage VBO.
Because the other junctions J1 and J3 are already forward biased, there will be
a free carrier movement across all three junctions resulting in a large forward
anode to cathode current through the device. Due to the flow of this anode to
cathode forward current, the device is said to be in conducting state or ON
state. The voltage drop would be due to the ohmic drop in the four layers and is
small typically, 1V.
The anode to cathode forward current must be more than latching current IL to
maintain the required amount of carrier flow across the junction; otherwise, the
device reverts to blocking state as the anode to cathode voltage is reduced.
Latching Current (IL):-

It is the minimum anode to cathode current that must flow through SCR to
maintain the device in the ON state immediately after it has been turned ON
and the gate signal has been removed.
Once an SCR conducts, it behaves like a conducting diode and there is no
control over the device. The device continues to conduct because there is no
depletion layer on the junction J2 due to free movements of carriers. However,
if the forward anode current is reduced below a level known as holding current
IH, a depletion region develops around junction J2 due to the reduced number
of carriers and SCR is in the blocking state.
Holding Current (IH):-

It represents the minimum current that can flow through SCR and still "hold" it
in the ON state. The accompanying voltage is termed as VH. If the forward
anode current is reduced below holding current, SCR will be turned OFF. The
holding current is defined for zero gate current (IG = 0).

c) On-line double conversion UPS:


The input is first rectified and then re-converted into alternating current with an
inverter. The output voltage waveform is totally independent from the input.
All potential mains disturbances are eliminated and there is no transient time
switching from the mains to the battery, as the output is always powered by the
inverter.
If overloads or other eventual problems occurs, this type of UPS has an
automatic Bypass that ensures the load is powered by switching it directly at
the input.
d) Off line UPS: When the mains supply is on, the output is identical to the input.
The UPS attends only when there is no input voltage and powers the load
using the inverter, which in turn is powered by the batteries.

Question 5: For the following terms, mention two: (12 marks)


a) advantages of FACTs:
 To supply the network as quick as possible with inductive or capacitive
reactive power that is adopted for a particular requirement
 improving transmission quality
 Improve efficiency of the AC grid
b) advantages of using UPS:
 To avoid unexpected data lose once the main power supplier gets off
 To protect connected equipment.
c) Types of FETs : JFETs and MOSFET
d) Types of FACTs controller :
Static var compensator (SVC), Fixed and thyristor-controlled series capacitor
(TCSC), Phase-shifting transformer (PST) , Synchronous static compensator
(STATCOM), Synchronous static series compensator (SSSC), Universal power
flow controller (UPFC
e) Use of bipolar junction transistors: As amplifiers or as a switching element
f) Using SMPS over linear regulators: More efficient, light and small.
Total marks: 60

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