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LTPJC :20244
Course
Pre-requisites : EEE 1001
VIT University, Chennai Campus, Chennai. 2
Objectives
To apply the knowledge of solid state devices
principles to analyze electronic circuits.
To design amplifiers under different
configurations and study their responses
To understand the concepts underlying the
reliability, stability, thermal and noise analysis
of the semiconductor devices.
To have a hands on learning experience and
software knowledge by doing practical and
projects.
(a) Resistivity versus temperature for a typical conductor. Notice the linear rise in
resistivity with increasing temperature at all but very low temperatures.
(b) Resistivity versus temperature for a typical conductor at very low
temperatures. Notice that the curve flattens and approaches a nonzero
resistance as T → 0.
(c) Resistivity versus temperature for a typical semiconductor. The resistivity
increases dramatically as T → 0.
Uncontrolled Uncontrolled
Dc Dc
Ac Ac
Controlled Controlled
Dc Dc
Ac Ac
Ohm‟s law
Equations – different forms
Kirchoff‟s laws
Kirchoff‟s current law
Illustration
Materials
Conductors Low resistivity => “conductor”
Non-conductors High resistivity => “insulator”
Intermediate resistivity =>
Semi-conductors
“semiconductor”
conductivity lies between that of
conductors and insulators
Charge carriers
generally crystalline in structure
Electrons for IC devices
Holes In recent years, however, non-
crystalline semiconductors have
become commercially very
important
Impurities
Pentavalent
Trivalent
For example, if Si is
doped with P
(phosphorous), then it
has more electrons, or
becomes type N
(electron).
If Si is doped with
B (boron), then it
has more holes, or
becomes type P.
minority carriers
Majority Carriers : p NA
2
n
Minority Carriers : n i
NA
Majority Carriers : n ND
2
n
Minority Carriers : p i
ND
intrinsic semiconductor: n = p = ni
extrinsic semiconductor: doped semiconductor
VIT University, Chennai Campus, Chennai. 52
Summary
The band gap energy is the energy required to free
an electron from a covalent bond.
Eg for Si at 300K = 1.12 eV
In a pure Si crystal, conduction electrons and holes
are formed in pairs.
Holes can be considered as positively charged mobile
particles which exist inside a semiconductor.
Both holes and electrons can conduct current.
Substitutional dopants in Si:
Group-V elements (donors) contribute conduction electrons
Group-III elements (acceptors) contribute holes
Very low ionization energies (< 50 meV)
μe - electron mobility
Mean free path: The average
distance that the electron travels
between collisions with the
bound ions
Conductivity, σ ( Ω−1m−1)
Ability of a conductor to conduct
Answer: d = 0.148 mm
6.02 1023
2.3 4.93 1022 atoms
28.1
Conductivity
conduction current density
Hence, conductivity
e-
Vd
Electric field
Electron movement
Current flow
𝑲
Open circuited PN junction, CD = 𝑽𝑩 𝒏
𝜺𝒒 𝑵𝑨𝑵𝑫
K=A𝟐 is a constant depending on the nature of the
𝑵𝑨+𝑵𝑫
semiconductor material
VB – barrier voltage
n – constant based on the grading of the PN junction (1/2 for an
abrupt junction, 1/3 for a linearly graded junction)
𝑲
Reverse biased PN junction, CD = 𝑽𝑩 − 𝑽 𝒏
Effect of Temperature on
diode characteristics
T
dc
0
L f
T
2 f
T
1
V V sin tdt
2
dc m
T 0
T V
V
V
1) V m
0.318V
(cos
m
dc m
T
dc
2
V 0.318V
I dc
dc m
R R
VIT University, Chennai Campus, Chennai. 93
Contd…
RMS output voltage, Vrms and
RMS output current = RMS input current, Irms
1
1 T
2
T
V v (t )dt 2
rms
0
L
1
V (V sin t ) dt
T
1 2
2
2
T
rms m
0
V
V rms
0.5V m
m
2
V 0.5V
I rms
rms m
R R
VIT University, Chennai Campus, Chennai. 94
Contd…
Average power output, Pdc
AC power output, Pac
Rectification efficiency, ηrec
(0.318V ) 2
P
dc
m
R
(0.5V ) 2
P
ac
m
R
(0.318V ) 2
40.5% m
(0.5V ) m
2
V 0.5V
FF
rms m
V dc
0.318V m
FF 1.57 157%
R F FF 1 2
V 1
(V sin t ) dt
T V
0.707V 2
2
m
s
T 0 m
2
m
0.5V
I I
s load
m
R
(0.318V ) m
2
P R
T UF dc
VI 0.5V
(0.707V )(
s s ) m
m
R
T UF 0.286
VIT University, Chennai Campus, Chennai. 97
Contd…
Peak inverse voltage, PIV
PIV is the maximum (peak) voltage that appears across the
diode when reverse biased. Here, PIV = Vm.``
- - PIV +
T
2
2
Vdc Vm sin t
T 0
2Vm
Vdc
Vdc 0.636Vm
VIT University, Chennai Campus, Chennai. 105
Lecture 8
04.02.2016
Dream, Dream, Dream. Dream transforms into
thoughts, and thoughts result in action" &
“we should not give up and we should not allow
the problem to defeat us.
- Dr. A.P.J. Abdul Kalam
-6 -3
+VF
1 2 3
+V
Constant
breakdown
voltage
R
Here, Vr will be equal to the reverse breakdown voltage of
the zener diode and should be constant. What is the purpose
Vr
of the resistor in this circuit? Its job is to limit the current
flowing through the zener diode:
D V Vr
I
R
VIT University, Chennai Campus, Chennai. 112
Bipolar Junction Transistor
The transistor is a versatile device usually configured to perform as a
switch or as an amplifier. The bipolar junction transistor (BJT) is the
most common type and has three leads:
3 3
Collector Collector
2 2
Base Base
1 Emitter 1 Emitter
In a transistor, the flow of current from the collector to the emitter is controlled
by the amount of current flowing into the base of the transistor. If no current
flows into the base, no current will flow from the collector to the emitter (it acts
like an open switch). If current flows into the base, then a proportional amount
of current flows from the collector to the emitter (somewhat like a closed switch).
No current flows from base to emitter, Current now flows through the transistor
so the transistor acts like an open from base to emitter. This causes the
switch and no current flows from transistor to allow current to flow from the
collector to emitter. collector to the emitter. The size of the
collector current depends on the size of
(Note: current never flows from base to the base current and the beta b of the
b IC I B
collector or vice versa, regardless of transistor:
the base current.)
E
E I B ( RB (1 b ) RE ) 0.7V
e
-
E 0.7V 0.7 volts is lost at the IB RE
IB junction of the base
RB (1 b ) RE and emitter
IC b I B E
IC
RE
R c
b -
b Ic
I e
+
b
Re
The PNP transistor behaves identically to the NPN transistor, except that all
polarities are reversed. The voltages are applied with opposite polarity, and
the currents run opposite to those in the NPN transistor, but all other behaviors
are the same.