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This is the Multiple Choice Questions in Field Effect Transistor Amplifiers from the book Electronic
Devices and Circuit Theory 10th Edition by Robert L. Boylestad. If you are looking for a reviewer in
Electronics Engineering this will definitely help. I can assure you that this will be a great help in reviewing
the book in preparation for your Board Exam. Make sure to familiarize each and every questions to
increase the chance of passing the ECE Board Exam.
A) current
B) voltage
C) power
D) resistance
A) current
B) voltage
C) power
D) resistance
A) digital circuitry
B) high-frequency
C) buffering
A) 1 µS to 10 µS
B) 100 µS to 1000 µS
C) 1000 µS to 5000 µS
D) 10000 µS to 100000 µS
A) 0 mA
B) 0.25 IDSS
C) 0.5 IDSS
D) IDSS
7. What is the typical value for the input impedance Zi for JFETs?
A) 100 kΩ
B) 1 MΩ
C) 10 MΩ
D) 1000 MΩ
A) 2 mS
B) 3 mS
C) 4 mS
D) 5 mS
9. Use the following equation to calculate gm for a JFET having IDSS = 10 mA, VP = –5 V, and VGSQ = –2.5
V.
A) 2 mS
B) 3 mS
C) 4 mS
D) 5 mS
A) 2 mS
B) 2.5 mS
C) 2.75 mS
D) 3.25 mS
A) 2.83 mS
B) 3.00 mS
C) 3.25 mS
D) 3.46 mS
12. Referring to the figure below, determine the output impedance for VGS = –3 V at VDS = 5 V.
A) 100 kΩ
B) 80 kΩ
C) 25 kΩ
D) 5 kΩ
B) 4 mS, 15 kΩ
C) 66.7 kΩ, 4 mS
14. The steeper the slope of the ID versus VGS curve, the ________ the level of gm.
A) less
B) same
C) greater
A) one-fourth
B) one-half
C) three-fourths
D) two-thirds
A) 1
B) 0.707
C) 0.5
D) 1.414
17. The more horizontal the characteristic curves on the drain characteristics, the ________ the output
impedance.
A) less
B) same
C) greater
18. What is (are) the function(s) of the coupling capacitors C1 and C2 in an FET circuit?
A) to create an open circuit for dc analysis
B) to isolate the dc biasing arrangement from the applied signal and load
19. Where do you get the level of gm and rd for an FET transistor?
A) 1.85 kΩ
B) 1.92 kΩ
C) 2.05 kΩ
D) 2.15 kΩ
A) –3.48
B) –3.56
C) –3.62
D) –4.02
B) RD || rd
C) RG
23. Which of the following is a required condition to simplify the equations for Zo and Av for the self-bias
configuration?
A) rd ≤ 10RD
B) rd = RD
C) rd ≥ 10RD
A) 2.92 kΩ
B) 3.20 kΩ
C) 3.25 kΩ
D) 3.75 kΩ
25. On which of the following parameters does rd have no or little impact in a source-follower
configuration?
A) Zi
B) Zo
C) Av
B) 340.5 Ω
C) 420.5 Ω
D) 480.9 Ω
27. Referring to this figure, calculate Zi for yos = 20 µS. Assume VGSQ = −2.2V.
A) 300.2 Ω
B) 330.4 Ω
C) 340.5 Ω
D) 350.0 Ω
A) –7.29
B) –7.50
C) –8.05
D) –8.55
A) 2.42 MΩ
B) 2.50 MΩ
C) 2.53 MΩ
C) 2.59 MΩ
A) 1.75 kΩ
B) 1.81 kΩ
C) 1.92 kΩ
D) 2.00 kΩ
A) –2.85
B) –3.26
C) –2.95
D) –3.21
A) 1.51 kΩ
B) 1.65 kΩ
C) 1.85 kΩ
D) 2.08 kΩ
34. Referring to this figure, calculate the value of RD if the ac gain is 10. Assume VGSQ = ¼Vp.
A) 2.2 kΩ
B) 2.42 kΩ
C) 2.62 kΩ
D) 2.82 kΩ
35. For an FET small-signal amplifier, one could go about troubleshooting a circuit by ________.
B) using a dc meter
Fill-in-the-blanks Questions
1. A field-effect transistor amplifier provides excellent voltage gain with the added feature of a _____
input impedance.
A) low
B) medium
C) high
2. The depletion MOSFET circuit has a _____ input impedance than a similar JFET configuration.
A) much higher
B) much lower
C) lower
D) higher
3. The _____ is quite popular in digital circuits, especially in CMOS circuits that require very low power
consumption.
A) JFET
B) BJT
C) D-type MOSFET
D) E-type MOSFET
A) Zi
B) gm
C) ID
D) IG
A) Ai
B) Av
C) Zi
D) Zo
A) ID’, VGS
B) VGS’, ID
C) IG’, VDS
D) IG’, ID
B) ID to VDS
C) VGS to IG
D) VGS to VDS
A) decreases
C) increases
A) Vp
B) 0.5 Vp
C) 0.3 Vp
D) IDSS
10. The value of gm is at its maximum gm0 at VGS equal to _____ and zero at VGS equal to _____.
A) 0 V, Vp
B) Vp, 0 V
C) 0.5Vp, 0.3Vp
D) 0.3Vp , 0.5Vp
A) 1 kΩ –10 kΩ
B) 100 kΩ –1 MΩ
C) 10 MΩ –100 MΩ
D) 1012 Ω to 1015 Ω
A) 5 µS –10 µS
B) 10 µS –50 µS
C) 50 µS –100 µS
D) 200 µS –500 µS
13. The _____ configuration has the distinct disadvantage of requiring two dc voltage sources.
A) self-bias
B) voltage-divider
C) fixed-bias
A) RG
B) RD
C) Zero
A) Fixed-bias
B) Self-bias
C) Voltage-divider
17. _____ is the only parameter that is different between voltage-divider and fixed-bias configurations.
A) Zi
B) Av
C) Zo
18. The input and output signals are in phase in a _____ configuration.
A) fixed-bias
B) source-follower
C) voltage-divider
D) self-bias
A) fixed-bias
B) self-bias
C) source-follower
D) voltage-divider
20. The input and output signals are 180º out of phase in a _____ configuration.
A) source-follower
B) common-gate
C) common-drain
D) voltage-divider
21. The isolation between input and output circuits in the ac equivalent circuit is lost in a _____
configuration.
A) common-gate
B) common-source
C) common-drain
22. The _____ configuration has an input impedance, which is other than RG.
A) common-source
B) common-gate
C) common-drain
23. The gate-to-source voltage VGS of a(n) _____ must be larger than the threshold VGS(Th) for the
transistor to conduct.
A) JFET
B) D-type MOSFET
C) E-type MOSFET
24. rd changes from one operation region to another with _____ values typically occurring at _____
levels of VGS (closer to zero).
A) lower, lower
B) lower, higher
C) higher, lower
B) D-type MOSFET
C) E-type MOSFET
2. current
3. voltage
5. 1000 µS to 5000 µS
6. 0.25 IDSS
7. 1000 MΩ
8. 3 mS
9. 2 mS
10. 2.75 mS
11. 3.46 mS
12. 100 kΩ
14. greater
15. one-half
16. 0.707
17. greater
20. 1.92 kΩ
21. –3.62
22. RD || rd
23. rd ≥ 10RD
24. 2.92 kΩ
26. 480.9 Ω
27. 330.4 Ω
29. –7.29
30. 2.53 MΩ
31. 1.81 kΩ
32. –2.95
33. 1.65 kΩ
34. 2.82 kΩ
Fill-in-the-blanks-answers
1. high
2. much higher
3. E-type MOSFET
4. gm
5. Ai
6. VGS’, ID
7. ID to VGS
8. increases
9. IDSS
10. 0 V, Vp
12. 10 µS –50 µS
13. fixed-bias
14. RG
17. Zi
18. source-follower
19. source-follower
20. voltage-divider
21. common-gate
22. common-gate