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Facultad de Ingeniería
Grupo: 05
Análisis
En d.c.
30V
De Q1
𝑅1 𝑅2 𝑅1 𝑉𝑇𝐻
𝑅𝑇𝐻 = 𝑉𝑇𝐻 = 𝑅𝐸 = 33𝐾Ω + 1𝐾Ω
𝑅1 +𝑅2 𝑅1 +𝑅2
330(30)
𝑅 𝑇𝐻=(330)(330) 𝑉𝑇𝐻 = 𝑅𝐸 = 34𝐾Ω
330+330
330+330
𝑉𝑇𝐻 −𝑉𝐵𝐸
𝐼𝐵 = 𝐼𝐶 = 𝛽𝐼𝐵
𝑅𝑇𝐻 +𝑅𝐸 (1+𝛽)
15−0.7
𝐼𝐵 = 𝑰𝑪 = 𝟎. 𝟓𝟗𝟗𝒎𝑨
165+34(1+𝛽)
𝐼𝐵 = 5.99𝜇𝐴
𝐼𝐶 𝛽 𝑉𝐴
𝑔𝑚1 = 𝑟𝜋1 = 𝑟𝑜1 =
𝑉𝑇 𝑔𝑚1 𝐼𝐶
0.599𝑚𝐴 100 100
𝑔𝑚1 = 𝑟𝜋1 = 𝑟𝑜1 =
26𝑚𝑉 23.03𝑥10−3 0.599𝑥10−3
𝐴
𝑔𝑚1 = 23.03 𝑚 𝑟𝜋1 = 4.34𝐾Ω 𝑟𝑜1 = 166.94𝑘Ω
𝑉
De Q2
𝐼𝐸 = 1.72𝑚𝐴
𝐼𝐶 𝛽 𝑉𝐴
𝑔𝑚2 = 𝑟𝜋2 = 𝑟𝑜2 =
𝑉𝑇 𝑔𝑚1 𝐼𝐶
1.72𝑚𝐴 100 100
𝑔𝑚2 = 𝑟𝜋2 = 𝑟𝑜2 =
26𝑚𝑉 66.15𝑥10−3 1.72𝑥10−3
𝐴
𝑔𝑚2 = 66.15 𝑚 𝑟𝜋2 = 1.5𝐾Ω 𝑟𝑜2 = 58.14𝑘Ω
𝑉
Análisis en a.c.
(𝑟𝑜1 ‖1𝐾Ω‖14.98𝐾Ω‖𝑟𝜋2 ‖)
𝐴𝑣1 = −
𝑅𝐸
𝐴𝑣1 = −1.27
𝜇 = 𝑔𝑚𝑟𝑜2 𝑍𝑜 = 𝑟𝑠𝑎𝑙. ||6.8𝑘Ω
𝜇 = 3.84𝑥10−3 𝒁𝒐 = 𝟔. 𝟕𝟓𝒌𝛀
𝑟𝑠𝑎𝑙. = 𝑟𝑜2 + 𝑅𝐸 (1 + 𝜇)
𝑟𝑠𝑎𝑙. = 557.34𝐾Ω
𝑅𝐿𝐴𝐶
𝐴𝑣1 = − 𝐴𝑣 = 𝐴𝑣1 𝐴𝑣2
𝑅𝐸
𝑟𝑠𝑎𝑙. ||6.8𝑘Ω
𝐴𝑣1 = − 𝑨𝒗 = 𝟔𝟓. 𝟔𝟐
𝑅𝐸
𝐴𝑣1 = −51.67
𝑉𝑜
𝐴𝑣 =
𝑉𝑖
𝑉𝑜 = 𝐴𝑣𝑉𝑖
𝑽𝒐 = 𝟗. 𝟖𝟒𝟑𝑽
Simulación en d.c
𝐼𝐶1 = 0.412𝑚𝐴
𝐼𝐶2 = 1.69𝑚𝐴
Simulación en a.c
𝑉𝑂 = 9.07𝑉
Circuito 2