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n3 VDD
LED 3
n2 LED 2
n1 LED 1
Fig. 1a
VD D
n3 n2 n1
M3 M2 M1 D
G B
Ve
Si n Fig. 1b
Diffusion
Polysilicon
Metal 1 µ
Contact
1µ
R=?
LENGTH L S L/S
WIDTH W S W/S
THIN OXIDE tox S tox/S
DIFFUSION DOPING ND 1/S ND . S
SUBSTRATE DOPING NA 1/S NA . S
SUPPLY VOLTAGE VDD S VDD/S
Table 1
Area, A A= A’ =
Current,I I= I’D =
Power , P P= P’ =
Table 2
2
Pd C LVDD f p
2
(2) Dynamic: (a) switching:
Vt n, p Vton, p VSB 2 f
f
tr , f
(b) Short circuit: Psc VDD 2Vt
3
12 tp
VTo’ = VTo + (q. DI/Cox), DI= Dose of dopant in the channel (atoms/cm2),
Cox= gate oxide capacitane per unit area, Cox = 1.5fF/m2 , μn= 500cm2/V-sec
q 1.6 *1019 Col / atom