NTD4806N

Power MOSFET
30 V, 76 A, Single N-Channel, DPAK/IPAK
Features
•Low RDS(on) to Minimize Conduction Losses
•Low Capacitance to Minimize Driver Losses
•Optimized Gate Charge to Minimize Switching Losses http://onsemi.com
•These are Pb-Free Devices
V(BR)DSS RDS(on) MAX ID MAX
Applications
•CPU Power Delivery 30 V
6.0 mW @ 10 V
76 A
•DC-DC Converters 9.4 mW @ 4.5 V
•Low Side Switching
D
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Symbol Value Unit
N-Channel
Drain-to-Source Voltage VDSS 30 V
G
Gate-to-Source Voltage VGS "20 V
Continuous Drain TA = 25°C ID 14 A S
Current (RqJA) (Note 1)
TA = 85°C 11
Power Dissipation TA = 25°C PD 2.14 W 4 4
(RqJA) (Note 1) 4
Continuous Drain TA = 25°C ID 11 A
Current (RqJA) (Note 2)
Steady TA = 85°C 8.8 1 2
3 1 1
State 2 3
Power Dissipation TA = 25°C PD 1.33 W 2
(RqJA) (Note 2) 3
CASE 369AA CASE 369AD CASE 369D
Continuous Drain TC = 25°C ID 76 A DPAK IPAK IPAK
Current (RqJC) (Bent Lead) (Straight Lead) (Straight Lead
(Note 1) TC = 85°C 59
STYLE 2 DPAK)
Power Dissipation TC = 25°C PD 60 W
(RqJC) (Note 1) MARKING DIAGRAMS
Pulsed Drain Current tp=10ms TA = 25°C IDM 150 A & PIN ASSIGNMENTS
4
Current Limited by Package TA = 25°C IDmaxPkg 45 A Drain
4 4
Operating Junction and Storage Temperature TJ, Tstg -55 to °C Drain Drain
06NG
YWW

175
48
06NG
06NG

YWW
YWW

Source Current (Body Diode) IS 50 A

48
48

Drain to Source dV/dt dV/dt 6.0 V/ns

Single Pulse Drain-to-Source Avalanche EAS 220 mJ
Energy (VDD = 24 V, VGS = 10 V, 2
1 Drain 3 1 2 3
L = 1.0 mH, IL(pk) = 21 A, RG = 25 W)
Gate Source Gate Drain Source 1 2 3
Lead Temperature for Soldering Purposes TL 260 °C Gate Drain Source
(1/8″ from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum Y = Year
Ratings are stress ratings only. Functional operation above the Recommended WW = Work Week
Operating Conditions is not implied. Extended exposure to stresses above the 4806N = Device Code
Recommended Operating Conditions may affect device reliability. G = Pb-Free Package

ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.

© Semiconductor Components Industries, LLC, 2008 1 Publication Order Number:

January, 2008 - Rev. 4 NTD4806N/D
 NTD4806N

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit
Junction-to-Case (Drain) RqJC 2.5 °C/W
Junction-to-Tab (Drain) RqJC-TAB 3.5
Junction-to-Ambient - Steady State (Note 1) RqJA 70
Junction-to-Ambient - Steady State (Note 2) RqJA 113
1. Surface-mounted on FR4 board using 1 in sq pad size, 1 oz Cu.
2. Surface-mounted on FR4 board using the minimum recommended pad size.

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 V
Drain-to-Source Breakdown Voltage V(BR)DSS/TJ 27 mV/°C
Temperature Coefficient
Zero Gate Voltage Drain Current IDSS VGS = 0 V, TJ = 25°C 1.0 mA
VDS = 24 V TJ = 125°C 10
Gate-to-Source Leakage Current IGSS VDS = 0 V, VGS = "20 V "100 nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA 1.5 2.5 V
Negative Threshold Temperature VGS(TH)/TJ 6.0 mV/°C
Coefficient
Drain-to-Source On Resistance RDS(on) VGS = 10 to 11.5 V ID = 30 A 4.9 6.0 mW
ID = 15 A 4.8
VGS = 4.5 V ID = 30 A 7.9 9.4
ID = 15 A 7.5
Forward Transconductance gFS VDS = 15 V, ID = 15 A 14 S
CHARGES AND CAPACITANCES
Input Capacitance Ciss 2142 pF
VGS = 0 V, f = 1.0 MHz,
Output Capacitance Coss 480
VDS = 12 V
Reverse Transfer Capacitance Crss 251
Total Gate Charge QG(TOT) 15 23 nC
Threshold Gate Charge QG(TH) VGS = 4.5 V, VDS = 15 V, 3.0
Gate-to-Source Charge QGS ID = 30 A 7.0
Gate-to-Drain Charge QGD 7.0
Total Gate Charge QG(TOT) VGS = 11.5 V, VDS = 15 V, 37 nC
ID = 30 A
SWITCHING CHARACTERISTICS (Note 4)
Turn-On Delay Time td(on) 13.9 ns
Rise Time tr VGS = 4.5 V, VDS = 15 V, 29.7
Turn-Off Delay Time td(off) ID = 15 A, RG = 3.0 W 18.3
Fall Time tf 7.8
Turn-On Delay Time td(on) 8.5 ns
Rise Time tr VGS = 11.5 V, VDS = 15 V, 23.8
Turn-Off Delay Time td(off) ID = 15 A, RG = 3.0 W 26
Fall Time tf 4.7
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.

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 NTD4806N

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Parameter Symbol Test Condition Min Typ Max Unit
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V, TJ = 25°C 0.9 1.2 V
IS = 30 A TJ = 125°C 0.8
Reverse Recovery Time tRR 26 ns
Charge Time ta VGS = 0 V, dIs/dt= 100 A/ms, 13
Discharge Time tb IS = 30 A 13
Reverse Recovery Time QRR 16 nC
PACKAGE PARASITIC VALUES
Source Inductance LS 2.49 nH
Drain Inductance, DPAK LD 0.0164
Drain Inductance, IPAK LD TA = 25°C 1.88
Gate Inductance LG 3.46
Gate Resistance RG 1.0 W

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 NTD4806N

TYPICAL PERFORMANCE CURVES

100 160
10 V 150 VDS ≥ 10 V
90 6V 140
ID, DRAIN CURRENT (AMPS)

ID, DRAIN CURRENT (AMPS)

80 5V 130
4.2 V 120
4.5 V
70 110
60 4V 100
90
50 80
3.8 V 70
40 60
30 3.6 V 50 TJ = 125°C
40
20 30
3.4 V TJ = 25°C
10 20
3.2 V 10 TJ = -55°C
0 0
0 1 2 3 4 5 0 1 2 3 4 5 6
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

RDS(on), DRAIN-TO-SOURCE RESISTANCE (W)

RDS(on), DRAIN-TO-SOURCE RESISTANCE (W)

0.048 0.015
ID = 30 A TJ = 25°C
0.043
TJ = 25°C
0.038
VGS = 4.5 V
0.033 0.010
0.028

0.023
VGS = 11.5 V
0.018 0.005

0.013
0.008
0.003 0
3 4 5 6 7 8 9 10 50 55 60 65 70 75 80 85 90
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPS)
Figure 3. On-Resistance vs. Gate-to-Source Figure 4. On-Resistance vs. Drain Current and
Voltage Gate Voltage
RDS(on), DRAIN-TO-SOURCE RESISTANCE

2.0 100,000
VGS = 0 V
ID = 30 A
VGS = 10 V TJ = 175°C
1.5 10,000
IDSS, LEAKAGE (nA)
(NORMALIZED)

1.0 1000
TJ = 125°C

0.5 100

0 10
-50 -25 0 25 50 75 100 125 150 175 5 10 15 20 25
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 5. On-Resistance Variation with Figure 6. Drain-to-Source Leakage Current

Temperature vs. Drain Voltage

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 NTD4806N

TYPICAL PERFORMANCE CURVES

4000 8

VGS , GATE-TO-SOURCE VOLTAGE (VOLTS)

VDS = 0 V VGS = 0 V TJ = 25°C
C, CAPACITANCE (pF)

3000 Ciss 6

QT VGS
Ciss Q1 Q2
2000 4

Crss

1000 2
ID = 30 A
Coss
VGS = 4.5 V
Crss TJ = 25°C
0 0
10 5 0 5 10 15 20 25 0 5 10 15 20
VGS VDS QG, TOTAL GATE CHARGE (nC)
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 8. Gate-To-Source and Drain-To-Source
Figure 7. Capacitance Variation Voltage vs. Total Charge

1000 30
VDD = 15 V IS, SOURCE CURRENT (AMPS) VGS = 0 V
ID = 30 A TJ = 25°C
25
VGS = 11.5 V

100 tr 20
t, TIME (ns)

td(off) 15

10 td(on) 10
tf
5

1 0
1 10 100 0.5 0.6 0.7 0.8 0.9 1.0
RG, GATE RESISTANCE (OHMS) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

Figure 9. Resistive Switching Time Figure 10. Diode Forward Voltage vs. Current
Variation vs. Gate Resistance

1000 250
EAS, SINGLE PULSE DRAIN-TO-SOURCE
I D, DRAIN CURRENT (AMPS)

ID = 21 A
10 ms 200
AVALANCHE ENERGY (mJ)

100

100 ms
150
10 1 ms
VGS = 20 V
SINGLE PULSE 10 ms 100
TC = 25°C dc
1
RDS(on) LIMIT 50
THERMAL LIMIT
PACKAGE LIMIT
0.1 0
0.1 1 10 100 25 50 75 100 125 150 175
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C)

Figure 11. Maximum Rated Forward Biased Figure 12. Maximum Avalanche Energy vs.
Safe Operating Area Starting Junction Temperature

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 NTD4806N

TYPICAL PERFORMANCE CURVES

100

I D, DRAIN CURRENT (AMPS)

25°C
100°C
125°C

10

1
1 10 100 1000
PULSE WIDTH (ms)

Figure 13. Avalanche Characteristics

r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE

1.0
D = 0.5

0.2
(NORMALIZED)

0.1

0.1 0.05 P(pk)

RqJC(t) = r(t) RqJC
0.02
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
0.01
t1 READ TIME AT t1
SINGLE PULSE t2 TJ(pk) - TC = P(pk) RqJC(t)
DUTY CYCLE, D = t1/t2
0.01
1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01
t, TIME (ms)

Figure 14. Thermal Response

ORDERING INFORMATION
Order Number Package Shipping†
NTD4806NT4G DPAK
2500 Tape & Reel
(Pb-Free)

NTD4806N-1G IPAK
75 Units/Rail
(Pb-Free)

NTD4806N-35G IPAK Trimmed Lead

(3.5 " 0.15 mm) 75 Units/Rail
(Pb-Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.

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 NTD4806N

PACKAGE DIMENSIONS

DPAK
CASE 369AA-01
ISSUE A

NOTES:
-T- SEATING 1. DIMENSIONING AND TOLERANCING
PLANE PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
B C
INCHES MILLIMETERS
V R E DIM MIN MAX MIN MAX
A 0.235 0.245 5.97 6.22
B 0.250 0.265 6.35 6.73
4 C 0.086 0.094 2.19 2.38
Z D 0.025 0.035 0.63 0.89
A E 0.018 0.024 0.46 0.61
S H F 0.030 0.045 0.77 1.14
1 2 3 H 0.386 0.410 9.80 10.40
U J 0.018 0.023 0.46 0.58
L 0.090 BSC 2.29 BSC
R 0.180 0.215 4.57 5.45
S 0.024 0.040 0.60 1.01
F J U 0.020 --- 0.51 ---
L V 0.035 0.050 0.89 1.27
Z 0.155 --- 3.93 ---

D 2 PL

0.13 (0.005) M T

SOLDERING FOOTPRINT*
6.20 3.0
0.244 0.118
2.58
0.101

5.80 1.6 6.172

0.228 0.063 0.243

SCALE 3:1 ǒinches

mm Ǔ

*For additional information on our Pb-Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

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 NTD4806N

PACKAGE DIMENSIONS

IPAK (STRAIGHT LEAD DPAK)

CASE 369D-01
NOTES:
ISSUE B 1. DIMENSIONING AND TOLERANCING PER
B C ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
V R E
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.235 0.245 5.97 6.35
4
Z B 0.250 0.265 6.35 6.73
C 0.086 0.094 2.19 2.38
A D 0.027 0.035 0.69 0.88
S
1 2 3 E 0.018 0.023 0.46 0.58
F 0.037 0.045 0.94 1.14
G 0.090 BSC 2.29 BSC
-T- H 0.034 0.040 0.87 1.01
SEATING J 0.018 0.023 0.46 0.58
PLANE K K 0.350 0.380 8.89 9.65
R 0.180 0.215 4.45 5.45
S 0.025 0.040 0.63 1.01
V 0.035 0.050 0.89 1.27
J Z 0.155 --- 3.93 ---
F
H
STYLE 2:
D 3 PL PIN 1. GATE
2. DRAIN
G 0.13 (0.005) M T 3. SOURCE
4. DRAIN

3.5 MM IPAK, STRAIGHT LEAD

CASE 369AD-01
ISSUE O
NOTES:
E A 1.. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
L2 E3 A1 E2 2.. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND
0.30mm FROM TERMINAL TIP.
D2 4. DIMENSIONS D AND E DO NOT INCLUDE
MOLD GATE OR MOLD FLASH.
D
L1 MILLIMETERS
DIM MIN MAX
A 2.19 2.38
L A1 0.46 0.60
T A2 0.87 1.10
SEATING b 0.69 0.89
PLANE b1 A1 b1 0.77 1.10
D 5.97 6.22
2X e A2 D2 4.80 ---
E2 E 6.35 6.73
3X b E2 4.70 ---
0.13 M T E3 4.45 5.46
e 2.28 BSC
D2 L 3.40 3.60
L1 --- 2.10
L2 0.89 1.27

OPTIONAL
CONSTRUCTION

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8