2SK168

Silicon N-Channel Junction FET

Application

VHF Amplifier, Mixer, Local oscillator

Outline

TO-92 (2)

1. Gate
2. Source
3. Drain

3
2
1
2SK168

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit
Gate to drain voltage VGDO –30 V
Gate to source voltage VGSS –1 V
Gate current IG 10 mA
Drain current ID 20 mA
Channel power dissipation Pch 200 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions
Gate to drain breakdown V(BR)GDO –30 — — V I G = –100 µA, IS = 0
voltage
Gate cutoff current I GSS — — –10 nA VGS = –0.5 V, VDS = 0
1
Drain current I DSS* 4 — 20 mA VDS = 5 V, VGS = 0
Gate to source cutoff voltage VGS(off) — — –3.0 V VDS = 5 V, ID = 10 µA
Forward transfer admittance |yfs| 8 10 — mS VDS = 5 V, VGS = 0, f = 1 kHz
Input capacitance Ciss — 6.8 — pF VDS = 5 V, VGS = 0, f = 1 MHz
Reverse transfer capacitance Crss — 0.1 — pF VDS = 5 V, VGS = 0, f = 1 MHz
Power gain PG — 27 — dB VDS = 5 V, VGS = 0,
f = 100 MHz
Noise figure NF — 1.7 — dB VDS = 5 V, VGS = 0,
f = 100 MHz
Note: 1. The 2SK168 is grouped by I DSS as follows.
D E F
4 to 8 6 to 12 10 to 20

2
 2SK168

Maximum Channel Power

Dissipation Curve Typical Output Characteristics (1)
300 10
Channel Power Dissipation Pch (mW)

VGS = 0
8

Drain Current ID (mA)

Pc
h
–0.2 V =
200 20
6 0
m
W
–0.4
4
100 –0.6

2 –0.8
–1.0

0 50 100 150 0 10 20 30 40 50
Ambient Temperature Ta (°C) Drain to Source Voltage VDS (V)

Typical Output Characteristics (2) Typical Transfer Characteristics

10 15

VGS = 0 VDS = 5 V
8
Drain Current ID (mA)

Drain Current ID (mA)

–0.2 V 10
6

–0.4 F
4
–0.6 5 E

2 –0.8 D
–1.0

0
0 1 2 3 4 5 –3.0 –2.0 –1.0 0
Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V)

3
2SK168

Forward Transfer Admittance vs.

Forward Transfer Admittance vs.
Drain to Source Voltage
Drain Current
Forward Transfer Admittance yfs (mS)

Forward Transfer Admittance yfs (mS)

15
Ta = –25°C 50

25°C
20
10 75°C
10

5 VGS = 0
2 VDS = 5 V
f = 1 kHz
f = 1 kHz
1.0

0.5
0 5 10 15 0.2 0.5 1.0 2 5 10 20
Drain to Source Voltage VDS (V) Drain Current ID (mA)

Reverse Transfer Capacitance vs.

Input Capacitance vs. Drain to Source Voltage
Drain to Source Voltage 5
Reverse Transfer Capacitance Crss (pF)

20
VGS = 0 VGS = 0
Input Capacitance Ciss (pF)

f = 1 MHz 2 f = 1 MHz

10 1.0

0.5

5
0.2

0.1

2 0.05
0.1 0.2 0.5 1.0 2 5 10 0.1 0.2 0.5 1.0 2 5 10
Drain to Source Voltage VDS (V) Drain to Source Voltage VDS (V)

4
 2SK168

Output Capacitance vs. Power Gain vs.

Drain to Source Voltage Drain to Source Voltage
200 30

VGS = 0
Output Capacitance Coss (pF)

100
f = 1 MHz

Power Gain PG (dB)

50
20
VGS = 0
20 f = 100 MHz

10 10

2
0.1 0.2 0.5 1.0 2 5 10 0 5 10 15
Drain to Source Voltage VDS (V) Drain to Source Voltage VDS (V)

Noise Figure vs.

Power Gain vs. Drain Current Drain to Source Voltage
30 8

E F VGS = 0
f = 100 MHz
Noise Figure NF (dB)
Power Gain PG (dB)

6
D
20

10 VDS = 5 V
f = 100 MHz
2
VGS Variable

0
2 4 6 8 10 12 14 16 0 4 8 12 16
Drain Current ID (mA) Drain to Source Voltage VDS (V)

5
2SK168
Input and Output Admittance Transfer Admittance vs.
vs. Frequency Frequency
5 50

Reverse Transfer Admittance yrs (mS)

Forward Transfer Admittance yfs (mS)
gis
yis = gis+jbis VDS = 5 V
ID = 10 mA
Output Admittance yos (mS)

yos = gos+jbos
Input Admittance yis (mS)

2 20
VDS = 5 V bis×10 gfs
ID = 10 mA
1.0 10
bos×10
gos –bfs
0.5 5 –10 brs

0.2 2 yfs = gfs+jbfs 10 grs

yrs = grs+jbfs
0.1 1.0

0.05 0.5
50 100 200 500 50 100 200 500
Frequency f (MHz) Frequency f (MHz)

Input and Output Admittance Transfer Admittance vs.

vs. Drain Current Drain Current
5 50
Reverse Transfer Admittance yrs (mS)
Forward Transfer Admittance yfs (mS)

bos VDS = 5 V
Output Admittance yos (mS)

f = 100 MHz
Input Admittance yis (mS)

2 20
gis
gfs
1.0 10
bis×10
–bfs
0.5 5
–100 brs

0.2 VDS = 5 V yis = gis+jbis 2

f = 100 MHz yos = gos+jbos
100 grs
0.1 gos is Negligible 1.0 yfs = gfs+jbfs
Small at This Frequency yrs = grs+jbrs
0.05 0.5
0.5 1.0 2 5 10 20 50 0.5 1.0 2 5 10 20 50
Drain Current ID (mA) Drain Current ID (mA)

6
 2SK168
Power Gain and Noise Figure
Test Circuit

Shield
5.4 3.0
D.U.T.
50 L2 4,700
C1 L1 C2 V.V
SG Output 1,000 50
Impedance S.G.

Unit R : Ω
C : pF
VDD
C1, C2 : 0 to 30 pF Variable Air
L1 : 3.5 T 1 mmφ Copper Ribbon, Tin plated 10 mm Inside dia.
L2 : 4.5 T 1 mmφ Copper Ribbon, Tin plated 10 mm Inside dia.

7
 Unit: mm

4.8 ± 0.3 3.8 ± 0.3

5.0 ± 0.2
2.3 Max
12.7 Min
0.60 Max
0.7

0.45 ± 0.1 0.5

1.27
2.54

Hitachi Code TO-92 (2)

JEDEC Conforms
EIAJ Conforms
Weight (reference value) 0.25 g
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