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CMOS RF CIRCUIT DESIGN

Subject Code : 12EC020 IA Marks : 50


No. of Lecture Hours /week : 04 Exam Hours : 03
Total no. of Lecture Hours : 52 Exam Marks : 100

Introduction to RF Design and Wireless Technology:


Design and Applications, Complexity and Choice of Technology. Basic concepts in RF design:
Nonlinearly and Time Variance, Intersymbol interference, random processes and noise. Sensitivity and
dynamic range, conversion of gains and distortion.

RF Modulation: Analog and digital modulation of RF circuits, Comparison of various techniques for
power efficiency, Coherent and non-coherent detection, Mobile RF communication and basics of
Multiple Access techniques. Receiver and Transmitter architectures, Direct conversion and two-step
transmitters. RF Testing: RF testing for heterodyne, Homodyne, Image reject, Direct IF and sub
sampled receivers.

BJT and MOSFET Behavior at RF Frequencies: BJT and MOSFET behavior at RF frequencies,
modeling of the transistors and SPICE model, Noise performance and limitations of devices, integrated
parasitic elements at high frequencies and their monolithic implementation.

Circuits Design: Overview of RF Filter design, Active RF components & modeling, Matching and
Biasing Networks. Basic blocks in RF systems and their VLSI implementation, Low noise Amplifier
design in various technologies, Design of Mixers at GHz frequency range, Various mixers working and
implementation. Oscillators- Basic topologies VCO and definition of phase noise, Noise power and
trade off. Resonator VCO designs, Quadrature and single sideband generators. Radio frequency
Synthesizers- PLLS, Various RF synthesizer architectures and frequency dividers, Power Amplifier
design, Liberalization techniques, Design issues in integrated RF filters.

REFERENCE BOOKS:
1.B. Razavi, “RF Microelectronics” PHI 1998
2.R. Jacob Baker, H.W. Li, D.E. Boyce “CMOS Circuit Design, layout and Simulation”, PHI 1998.
3.Thomas H. Lee “Design of CMOS RF Integrated Circuits” Cambridge University press 1998.
4.Y.P. Tsividis, “Mixed Analog and Digital Devices and Technology”, TMH 1996
IMPORTANT QUESTIONS
CMOS RF CIRCUIT DESIGN
M.Tech-VLSI[PT]
ODD SEMESTER 2015-2016 DATE:26/09/2015
1. Explain integer N frequency synthesizer.
2. Discuss the various basic LC oscillator topologies used in LC oscillators
3. Mention the classification of power amplifiers. Explain any two types with necessary diagrams.
4. Derive the phase error transfer function for the linear model of a PLL.
5. What is Q of an oscillator? Derive the expression for the Q of a Collpitts oscillator.
6. Discuss the loop dynamics of PLL in locked state.
7. Discuss the operation of Fractional-N synthesizer.
8. Explain Frequency Division Multiple Access (FDMA) and Time Division Multiple
Access(TDMA) Techniques.
9. What are the two types of architectures of receivers? Indicate the problems associated with
them.
10. With neat block diagram, explain the modulation, constellation, detection and derive suitable
expression for probability of error of BPSK schemes.
11. Briefly explain Class E amplifier.
12. “CDMA is a special case of spread spectrum communication” Justify the statement.
13. Write short notes on:
 Image reject receivers
 MOSFET behavior at RF frequencies
 SPICE model
14. Derive the suitable expression for IRR and with neat sketches. Explain the Hartley architecture.
15. With necessary diagrams and related equations explain the following :
 DS-CDMA
 QPSK
16. Explain the operation of bi-polar mixers. Obtain an expression power conversion gain.
17. Explain the working of a VCO.
18. Explain the operation of bi-polar mixers. Obtain an expression power conversion gain.
19. Explain the linearization techniques used in power amplifiers.
20. What is matched filter detection and integrated RF filters.
UNIT-1
Introduction to RF Design & Wireless Technology Important Questions
1. Explain the critical factor influencing the choice of RF Technologies with different
technologies.
2. With a neat block diagram of a generic analog & Digital RF System explain the
transceiver
3. Discuss the effect of Non-Linearity with respect to
1. Gain Compression
2. Intermodulation
3. Cross Modulation
4. What is ISI? Explain the nyquist inertia for zero ISI?
5. a) Discuss various applications of RF Technology?
b) Justify the statement “Trade-Offs are involved in the design of RF Circuits”
c) What do you mean by memory less – non-linear system?
6. Bring out the difference between Non-Linear time variant and linear time variant
systems.
7. For Cascaded Non-Linear Amplifier, derive an expression for A1p3
8. Obtain an expression to characterize the third order m termodulation non-linearity
9. Define sensitivity of an RF Receiver.
10. Derive the expression for A1p3 for a single stage on non-Linear Amplifier
11. Explain the effects of non-linearity in a system with examples?

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