SGS-THOMSON DAICROBLECTROMICS STA TXN/TYN 058 (G) ---> TXN/TYN 1008 (G) SCR FEATURES «= HIGH SURGE CAPABILITY « HIGH ON-STATE CURRENT is 4 oh i » HIGH STABILITY AND RELIABILITY a = TXNSerio : INSULATED VOLTAGE = 2500V(ams) (UL RECOGNIZED : £81734) DESCRIPTION ‘The TYN/TXN 058 --> TYN/TXN 1008 Family of ‘c Silicon Controlled Rectifiers uses a high performance Kk glass passivated chips technology. ‘This general purpose Family of Silicon Controlled pecan Rectifiers is designed for power supplies up to (Pasi) 400Hz on resistive or inductive load. ABSOLUTE RATINGS (liriting values) Symbol Parameter Value Unit rr(AMS) | AMS on-state curent THN | Toxt00°6 8 A {(180* conduction angle) TYN | To=t05*C trav) _ | Average on-state current TaN | To=100°C. 5 A (180° conduction angle.single phase circuit) | TYN | To=105*C trsm__ | Non repetitive surge peak on-state current {p83 ms 8 A (7 inital = 25°C ) ‘pet0 ms 80 Bt | ivalve ‘p10 ms 32 ns iit | Critical rate of rise of on-state current 0 Als Gate supply 1g = 100 mA_dightt = 1 Aus Tsig__ | Storage and operating junction temperature range = 40 to. 150 1 = 40 to 125 *c 11 | Maximum Jead temperature for soiering during 10.8 at 45 mm 260 “c from case ‘Symbol Parameter TYNATXN Unit ose | 108 | 206 | 408 | 608 | a6 | 1008 VpRM | Repetitive peak oftstate vottage | 50 | 100 | 200 | 400 | 600 | G00 | 1000] v vam | T= 125°C ‘Aor 1995, 5 mm 7929237 OO7bS0 397 aTXN/TYN 058 (G) > TXN/TYN 1008 (G) ‘THERMAL RESISTANCES ‘Symbol Parameter Value Unit Ath (a)__|Junction to ambient 60 sow th (-¢) DC | Junction to case for DC XN 35 sow TN 25 GATE CHARACTERISTICS (maximum values) PG (ayy=1W PG = 10W (p= 20s) IGM = 4A (ip =20 Hs) VAGM = 5 ¥. ELECTRICAL CHARACTERISTICS ‘Symbol ‘Test Conditions Value Unit suank |G lot | Vo-12V_ 0) AL=s30 qpese | max | 15 25 | ma Vet | Vo12v_ (00) AL=330 Tees | MAK 15 v Veo _| Vo-Vorm AL-39ko Te H10°c | Min 02 v tt | Yo=VonM_ ig = 40m Teese | TYP 2 Hs digit = OSA |i 12167 tease | TP 50 mA 1___[ Fre 100mA gato open teesc | max | 90 «5 | ma vna_| fT 168 p= 3804s ie25°c_| MAX 18 v (DRM VoRM Rated ‘T25°C_ | MAX 001 mA tar | YARM Rated ees 2 dvidt Linear slope up to Vp=67%VDRM_ Ti= 110°C | MIN 200 500 Vins gate open ta | vo-87%VDAM frm= 164 a= 25v | T= t10°c | TYP 70 1s atryiote30 Ais dVplat= S0Vs 25 G7 STON mm 7929237 007bSb) 223Package TxN (Insulated) YN (Uninsuiated) Fig.1 : Maximum average power dissipation versus TXN/TYN 058 (G) ---> TXN/TYN 1008 (G) VE ‘Sensith v BLANK 50 100 400 600 800 50 100 400 600 800 | foe fae ff fo Po foe > fo fox >< fo Fig.2 : Correlation between maximum average power average on-state cutent (TXN). ‘dissipation and maximum allowable temperatures (Tam and Tease) for diferent thormal resistances heatsink + contact (TN) Pw Pm Tease (0) 8 8 — 7 7 100 ‘ ¢ ar 5 5 al 4 410 Pac 3 3 A185 2 2] [ 120 1 1 Jet Tam 4 °% 200608010020 tak Fig3 : Maximum average power dissipation versus average on-state current (TYN) Fig.4 : Correlation between maximum average power dissipation and maximum allowable temperatures (Tam and Tease) for diferent thermal resistances heatsink + contact (TYN). Pom pm Team 0) 7 AS ] ° mente af, 2105 | ve vem 6 i: . }-—|110 4 ‘ 15 | Q- 18 2 2 120 rus) ano cor |_| tos Ft 2 34 5 6 7 6B 0 20 40 60 60 100 120 140 O57 SEBTHONSON wm 7929237 0 O7bSb2 1bT aTXN/TYN 058 (G) ---> TXN/TYN 1008 (G) Figs 1 Average onsiae cuen vorsus case Figé : Average onstale ourent versus case tempera (XN) temperature (TN) ayy) Tan) 1 , » a Bi || | q ‘ | A Tee ore ’ rt T eam (6 tease o! L o. —L 8a 36 a0 Ba TOO TOTO TO a0 10-20 30 a0 60 60 70 80 G0 100 110 120790 Fig.7 : Relative variation of thermal impedance versus pulse duration, zoe | ‘t0) oot 1 ui NES 162 1644600 SEot 102 BE? Fig.9 : Non repetiive surge peak on-state current versus number of cycles. Fig.8 : Relative variation of gate tigger curent versus junction temperature, ts 25 1s} neo | fl 40-20-10 © 10 20 86 40 50 86 70 00 BO TOOITO Fig.10 : Non repetiive surge peak on-state current for sinusoidal pulse with widh : t < 10 ms, and ‘corresponding value of Pt. yom) Aro (AD ASD 100; Tinie «26° u 80 t 1 t 0} fH : "130. 40) t 20- t Number of cycies | ||| ob uu 7 10 300 1000 Gyr S68:THOMSON. YF. (heme res we 7929237 0076563 OTbTXN/TYN 058 (G) --> TXN/TYN 1008 (G) Fig.t1 : On-state characteristics (maximum values). Law aD =n nit eo) oo « 2 Ss « 68 PACKAGE MECHANICAL DATA TO220B Plastic REF. DIMENSIONS Millimeters | _ inches A Min. | Max. | Min. | Max. i |e ‘A_| 10.00 | 10.40 | 0.398 | 0.409 | B_ | 15.20 | 15.90 | 0.598 | 0.625 te fo 113.00 | 14.00 | 0.511 | 0.551 D_[-620 [660 | 0.244 | 0.259 F_| 350 | 420 | 0.137 | 0.165 G_| 265 | 2.95 | 0.104 [0.116 F H_ [440 [460 | 0.173 | 0.181 . = 1_[375 [385 | 0.147 | 0.151 J [123 [1.32 [0.048 | 0.051 L_| 0.49 [0.70 [o.oi9 { 0.027 ' M_| 2.40 | 2.72 | 0.094 | 0.107 4 N_ [480 [5.40 [0.188 [0.212 (0 | 4.14 [1.70 | 0.044 | 0.066 P [oer | 0.88 | 0.024 | 0.034 ang ra acornondos rg Va TORT Warkng: ype number Maximum torque va 1m. Wegnt! 223 Information tunished is beloved tobe accurate and rlabe. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such Information nor for any iniingement of palents or other rights of third patie. which may ‘eult om Is Use. No lceneo Ie granted by impication or otheewise under any patent or patent rights of SGS-THOMSON Mico ‘lecronics. Spectications mentioned in this pubicaton are subject to change witout notes, This publeation supersedes and replaces al information previously supped. 'SGS.THOMSON Mictoslecronies prodicts are not auhorzed for use as ctical components in ile support devioes or systems witout express writen approval of SGS-THOMSON Wicrosecrencs. © 1995 SGS-THOMSON Microelectronics - Printed in Italy - All ights reserved, 'SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Matta - Morooco - The Nether lands Singapore - Spain - Sweden - Switzerland - Taiwan - Thaiand - United Kingdom - USA. mm 7529237 OO7bSb4 732 mm