Life Science Journal 2015;12(1) http://www.lifesciencesite.

com

Application of The Moment Method in The Spectral Domain

Mamdoh Gharbi, Adnan Affandi, Sami Ali

Department of Electrical and Computer Engineering, King Abdul Aziz University, P O Box:80204, Jeddah 21589
mamdohgharbi@yahoo.com

Abstract: The Moment Method (MM) is employed in the spectral domain where piece-wise sinusoidal basis
functions are used to expand the current distribution on the dipole. The current distribution and input impedance are
calculated as functions of the layers parameters. The effects of the material anisotropy and superstrate (cover)
parameters are studied. Expressions for the far-zone fields of the dipole in the anisotropic substrate-superstrate
structure are derived, and radiation patterns are computed for different structure parameter. Finally, Improvement of
Single-Element Antenna Design by using anisotropic layer will be demonstraited.
[Affandi A, Gharbi M, Ali S. Application of The Moment Method Spectral Integral Domain. Life Sci J
2015;12(5):1-23]. (ISSN:1097-8135). http://www.lifesciencesite.com. 1

Keywords: Moment method; dyadic Green’s function; current distribution; input impedance

1. Introduction advantages and disadvantages of both topographies.

Extensive amount of work is being carried out in Ultimately the Microstrip Patch array was chosen due
the analysis of various parameters associated with to its ease of impedance-matching with a 50-Ω SMA
antennas on anisotropic substrates (Deschamps, 1953) line input. The ideal outcome of the design is to
(Gutton and Baissinot, 1955). Study has also been produce a highly directive antenna. As such, it is
carried out using hertz vector potentials (Carver and necessary to implement an array of patch antenna
Mink, 1981). A full wave analysis for antenna on a elements to promote greater directivity and gain. 1-
double dielectric anisotropic substrate has also been element antennas were designed, simulated, and
done (Byron, 1970). A recent study includes analyzed. For simplicity and ease of mathematical
anisotropic substrate characterized by permittivity and calculations, patch antenna elements were separated
permeability tensors (Munson, 1974). by a constant distance of λ/2.
In our study the mixed boundary value problem
of a microstrip dipole placed on the top of a uniaxially 2. Spectral Domain Integral Equation
anisotropic substrate with the presence of a superstrate The microstrip dipole considered in Figure 2.1 is
(cover) layer as shown in Figure. 2.1. The cover layer of length L and width W.
can be either isotropic or uniaxially anisotropic
dielectric. The microstrip dipole is assumed to be
excited by an idealized source. This idealized source
provides the incident electric field, which excites
current on the dipole surface. Explicit form of the
spectral domain electric field integral equation (EFIE)
for the surface current induced on the dipole is derived
using the dyadic Green’s function for the layered
uniaxially anisotropic medium. The EFIE is solved
using the MM to find the unknown induced surface
current on the microstrip dipole. Piecewise sinusoidal
(PWS) expansion modes are used to represent the
unknown surface current. Explicit expressions for the
input impedance are obtained for different electrical
Figure 2.1. Geometry of the Problem
and geometrical parameters. Antenna research was
conducted to explore various methods of designing an
It is assumed that the width of the dipole is very
antenna that operates both effectively and efficiently
small compared to the free-space wavelength (W <<
within the previously mentioned design constraints.
o), and therefore the current on the dipole can be
After performing extensive research, the Yagi-Uda assumed to have only one component in the x-
array and Microstrip Patch antenna array were deemed
to be topologies that could effectively operate within direction. That is
J s = xˆ Js.
the design constraints. Multiple designs, simulations, The dielectric layers are characterized by
and analyses were conducted to provide insight on the permittivity and permeability tensors of the form

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 Life Science Journal 2015;12(4) http://www.lifesciencesite.com

 j 0 0 1
 r1TE =
 1  RTE1 RTE1 e 2ik1 z
(h)
h1
j = 0 j 0 (2.8)
0 0  jz  1
 (2.1) r1TM = (e )
TM
1 R 1 RTM1 e 2ik1 z h1 (2.9)
and 1

 j 0 I
k (h)
jz = k  2
j  k 2
s  2

(2.10)
j 2
k (jze ) = ( k 2j ks )
1

where
I
is the unit dyadic.
 2

 jz
The electric field integral equation EFIE on the (2.11)
surface S of the microstrip dipole can be written as: 2 2
k =  0  j
j
( s) (i) (2.12)
E t = E t , 1

where(t) stands for tangential components to the k 0z = k  2

0  k 2
s  2

(2.13)
surface of the printed dipole and
( s) T k 02 =  2  0  0 (2.14)
E t (r ) = i  dr  G 11 (r , r )  J s (r ) where j = 1,2.
S (2.2) The sommerfeld condition at infinity determines
T the branch interpretation of
G 11 ( r , r ) 1
where is the transverse 2x2 dyadic 
k 0 z = k 02  k s2  2

as:
k jz
Green’s function which is written as below with 1

= k 2
 k s2  2
k 0z 0 , k s  k0
( h) k jz
replaced by k 1z for TE waves and replaced by
Re ( k 0 z )  0 , and
k `1(ez) for TM waves, we get:

k s  ( rs  rs)
k 0 z = i k s2  k 02 ,  k s  k0
G 11 (r , r ) =   dk s e g11 ( k s , z)
z  =0  i.e Im( k 0 z )  0 .
TE
g11 (k s , z ) =
i0
8 2
r

k
1
(h)
1z
hˆ(k (h)
1z
(h) ( h) ( h)
)eik1 z z + RTE1 e 2ik1z h1 hˆ(k1(zh ) )e ik1 z z  In the above Re ( k 0 z ) and Im( k 0 z ) stand for
real and imaginary parts respectively.
hˆ(k (h)
1z ) + RTEI hˆ(k1(zh ) )  That is the positive branch of the square root has
TM
+
r
k
1
(e )
vˆ(k ( e)
1z
( e) (e )
)eik1 z z + RTM1 e2ik1 z h1 vˆ(k1(ze ) )eik1 z
(e )
z
 been properly chosen to be consistent with the
radiation condition as z   .
1z

vˆ(k (e )
) + RTM1 vˆ( k1(ze ) )
1z  (2.3) hˆ(k jz ) vˆ(k jz )
The unit vectors and are
where obtained as
k1(zh )  k 0 z 1
RTE1 = R10TE = (xˆky  yˆkx )
k 1(zh) + k 0 z hˆ(k (h )
jz ) hˆ( k (hjz) ) k
(2.4) = = s = ĥ (2.15)
(h) (h) (h)
TE k  ik2z 1z tan k h 2z 2 k (jze)  j ks
R 1 = (h) (h) ( h) (e )  ( xˆk x + yˆ k y ) + zˆ
 k  ik tan k h vˆ( k ) jz k j ks  jz k j
2z 1z 2z 2 (2.5) = =
k (e)
  1 k0z  j ks
uˆ (k (jze ) ) + zˆ
RTM1 = R10TM = 1z
(e)  jz k j
k 1z +  1 k 0z (2.6)
(2.16)
where j = 1, 2.
 2 k 1(ze )  i 1 k 2( ez ) tan k 2( ez ) h2 The expression for the transverse (surface)
RTM1 =
 2 k 1(ze)  i 1 k 2( ez ) tan k 2( ez ) h2 (2.7)
g 11 (k s , z = 0)
components of
Is

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N
i 0  r1TE
g 11T (k s , z = 0) =
8 2 k

TE 2 ik ( h ) h1
 ( h) 1 + R1 e 1 z 1 + R I hˆhˆ
TE
  J s (rs) = xˆ  I n f n ( x , y )
 1z n =1 (A/m) (2.22)
TM

+
r
k
1
( e)
1  R TM
1 e 2ik1( ze ) h1
1  R  TM
1 uˆ (k1(ze) )uˆ (k1(ze) )
where
f n ( x , y ) = n ( x ) n ( y ) (2.23)
1z 
(2.17) For the present work, Piecewise sinusoidal
Since the induced surface current density on the (PWS) expansion modes are selected to represent the
dipole is assumed to be in the x-direction, only the variation of the current in the x-direction.
The form of the nth expansion function centered
(x,x) component of G 11 will be required. Thus, about xn may be expressed mathematically as:
2
i  k y r TE  sin k ( x  xn -1 )
, xn-1  x  xn
(h )
g11( x , x ) ( k s ) = 02  2  1( h) 1 + RTE1 e 2ik1z h1 1 + RTE1
8  k s k 1z
    sin kd
 sin k ( x  x)
 n +1
, xn  x  xn +1 (2.24)
2 ( e)
  ( x ) = 
k k
 (e )
+ x2 1z2 r1TM 1  RTM1 e 2ik1z h1 1  RTM1  xˆ xˆ
k s k1
   sin kd
 (2.18) 
Substituting Eq. 2.3 in Eq. 2.2 with z = 0,  0 , otherwise

E t( s) (rs ) = i  dr    dk
s s e ik s  rs g11( x , x ) ( k s )  e iks  rs J s  rs where xn = nd, and d is the half length of each
S 
expansion mode given by d = L / N.
(2.19)
The wavenumber k for the PWS mode can be
Using the 2-D Fourier Transform, Eq 2.19
chosen arbitrary, however, a judicious choice will
reduces to:

improve the convergence. For single isotropic
substrate, it was found that setting k equal to the
E t( s ) (rs ) = i   dk s e ik s  rs g11( x , x ) ( k s )  J s k s   “effective” wave number for the substrate is a good
 (2.20) choice (Pozar, 1983)
where J s ( k s ) is the Fourier Transform of the k = ke =  e k0 (2.25)
surface current density J s ( rs ) .using electric field The y-variation of the current density may be
integral equation (EFIE) for the unknown surface chosen as
current density J s
1 W W
n ( y ) = ,   y 
E t
( s)
= Et
(i)
, W 2 (2.26)2
and Thus, The Fourier transform of the current
getting

density
J s ( x, y ) in Eq. 2.26 can be obtained as
 i 
ik  r ( x, x ) (i )
 
 dk s e s s g11 ( k s )  J s k s  E (rs ) , rs  S N
 (2.21a) ~

J s (k s ) = xˆ  I n Fn (k s )
n =1 (2.27)
  dk e s
ik s  rs
 
J s k s  0, rs  S where
 (2.21b) ~ ~ ~
Eqs. 2.21 are the coupled set vector integral
Fn ( k s ) =  n ( k x ) n ( k y )
(2.28)
equations in the spectral domain. Eq. 2.21a is the and
spectral domain electric field integral equation ~ 2 k e (cos k e d  cos k x d ) ik x nd
(SDEFEI).  n (k x ) = e
sin k e d ( k x2  k e2 )
2.1. Application of the Moment Method (2.29)
(MM)Solution W
To apply the MM to solve Eq. 2.21, the surface sin k y
current density on the dipole is expanded in terms of
~ 2
n ( k y ) =
f n ( x , y) W
appropriate expansion modes with ky
unknown coefficients In: 2 (2.30)
Substituting Eq. 2.27 in Eq. 2.21, we get

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N
VmP =  E
( s)
( x , y , z)  J (i ) ( x , y , z) dx dy dz
  I n E n( s ) (rs ) = E (i ) (rs ) , on S m
V (2.37b)
n=1 (2.31) Substituting Eq. 2.32 with n = m in Eq. 2.36 and
where E n ( rs ) is the scattered electric field due performing the integration over Sn, we get:

~ ~
to the n expansion mode f n of the surface current
th Zmn = i   dk x dk y Fm ( k x , k y ) g11( x , x ) ( k x , k y ) Fn ( k x , k y )
- ,
density J s , and is given by m = 1,2,..., N

(s) ~ n = 1,2,..., N
E n (rs ) = xˆi   dk s e ik s rs g11( x , x ) (k s ) Fn (k s ) (2.38)
- The system of equations given in Eq. 2.35 can be
n = 1,2,..,m,...,N (2.32) written in matrix form as
where g
( x ,x)
( k s ) is given by Eq. 2.8. Applying
11
[ Zmn ] [ In ] = m
V P
(2.39)
the Galerkin’s method by choosing the test function to where [ I ] is the generalized current column
be the same as the expansion functions; dot vector whose N components contain the In of Eq. 2.22,
multiplying Eq. 2.27 by f m ( x, y ) and integrating [ Zmn ] is the NxN generalized impedance matrix, and
over the surface of the dipole, we get
N
V  is the generalized voltage column vector. The
m
P

 I n  f m ( x , y )  E n( s ) ( x , y ) dx dy dimensions of the elements Zmn and Vm are volt-

P

n 1 Sm
amperes (VA), while the elements In are
 f m ( x , y )  E (i ) ( x , y ) dx dy dimensionless.
Sm
= , m= 1, 2,.., N 2.2 Calculation of the Generalized Voltage Matrix
(2.33)
where Sm is the surface of the mth test mode and V  m
P

E m( s) ( x, y ) is the scattered field in layer (1) by the mth test mode Iff mtheatdipole is excited by a delta-gap generator,
the position of the nth expansion mode. P
For the case of impressed current source (probe the evaluation of the voltage vector elements Vm
excitation), by using the reciprocity theorem, Eq. 2.33 given by Eqs. 2.37 is simple: only these position in the
can be written as generalized voltage matrix corresponding to segment
N junction that contain the generator will have non zero
( s)
 I n  E ( x , y )  f n ( x , y ) dx dy P
value (Vm =1 for a delta-gap generator of 1V) (Lo et
m
n 1 Sn

( s)
al., 1977).
 E m ( x, y, z)  J (i ) ( x, y, z)  dx dy dz When the dipole is excited by a probe, the
P
= V , evaluation of Vm is rather involved. In this case, we
m = 1, 2,.., N (2.34)
( s) need to find E m ( x , y , z ) which is the electric field in
where, E m ( x , y , z ) is the field in layer(2) of the dielectric layer (2) due to the mth expansion mode
J (i ) f m ( x , y ) of the surface current density on the
the test mode at the position of the probe and is
the impressed (source) current of the probe. dipole.
Thus, Eq. 2.33 or Eq. 2.34 can be written as: If the impressed source is assumed to be an
N idealized current source (probe feed) expressed as:
Z mn I n  VmP J (i ) ( x, y, z) = zˆ  ( x  x p )  ( y  y p )
n 1 , m = 1, 2,...., N (2.35) (2.40)
where where the feed position is at (xp,yp). The voltage
Z mn =   E m( s ) ( x , y )  f n ( x , y ) dx dy vector elements reduce to
Sn
(2.36) V mP =  E m ( x, y , z )  zˆ  ( x  x p )  ( y  y p ) dV
0
VmP =  f m ( x , y)  E (i ) ( x, y) dV
V (2.37a)
=
- h2
E zm ( x p , y p , z ) dz
or (2.41)

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( z ,x)
where Ezm is the z-component of E m . Using Eq. 2.44, Eq. 2.15 and Eq. 2.16 g 21
Using the dyadic Green’s function formulation, can be obtained as
we have ( z ,x)
g 21 ( k s , z) =
E m ( x , y, z) = i  G 21 (r , rs)  f m ( rs) dS  TM
i 0 2 r
Sm
(2.42)
8 2  2 z k1 k 2
1
(e)
X TM2 ,1 k x 1  RTM1 e 2 ik1z h1  
G 21 (r , rs)
where is the dyadic Green’s
function in layer (2) due to a point source in layer (1) e  ik2( ez) z
+ RTM2 e 2ik2 z
(e )
h2
eik2 z
(e )
z
 (2.48)
on the dipole surface. where the TE- components do not contribute.
From Eq. 2.43, Eq. 2.47 and Eq. 2.48, the
G 21 (r , rs)
for the layered uniaxially
expression for
E zm reduces to:
anisotropic medium can be given as:
E zm ( x p , y p , z )
G 21 (r , r ) =
z = 0 
= i ( kx x p  k y y p )
 i  dx  dy    dk s e
  dk s e ik s  ( rs rs) g21 ( k s , z) Sm -
(z,x)
- (2.43) g 21 ( k s , z ) e ik  rs f m ( rs) (2.49)
where Since
g 21 ( k s , z ) = ik s  rs ~
i 0  r1TE TE ˆ  dx dy  e f m (rs) = Fm ( k s )
2  (h)
8  k1z
 (h )
 (h ) ( h)
X 2,1 h  k2( hz ) eik2 z z + RTE2 e 2ik2 z h2 hˆ k 2(hz ) eik2 z z    Sm
(2.50)
thus
hˆ k ( h)
1z + R TE 2ik1(zh ) h1
1 e  
hˆ k1(zh ) Ezm(xp, yp ,z)
=
+ 
i(k x x p  k y y p )
r1TM TM i
k1(ze)
 (e)
 (e) (e)
 
X 2,1 vˆ  k 2( ez ) e ik2 z z + RTM2 e 2 ik2 z h2 vˆ k 2( ez) e ik2 z z    dk
-
x dk y e
~
vˆ k (e)
1z + R TM
1 e 2 ik 2( ez ) h1
 
vˆ k1(ze ) (2.44)
g ( z ,x)
21 ( k , z ) Fm ( k s )
s (2.51)
Substituting Eq. 2.51 in Eq. 2.41, we arrive at
where


X TE
=
1 + R  TE
1 i   dk x dk y e
i(k x x p  k y y p )

2 ,1 VmP
1 + R TE
2
(h)
e 2ik2 z h2  (2.45) ~ ( z ,x )
Fm (k x , k y )  g21(
= -

I ) ( k x , k y ,z)
,
X TM k
= ( e2)
k ( e)
1z
1  R  TM
1
m=1,2,....,N
2 ,1
k2z k1 1  R TM
2
(e)
e 2ik2 z h2  where

(2.46) 0
TE TM ( z, x)
R 2 = 1 R 2 1
g ( z,x)
21( I )
g
- h2
21 ( k x , k y , z) dz
=
Since f m (x,y) is assumed to be x-directed in Eq  2 r1TM k 1(ze )
 
(e )

2.22, and it is required to evaluate only the z-  02

k 12 (e) 2

k x 1  RTM1 1  RTM1 e 2ik1 z h1

=
8  2z k 2z
(2.52)
component of the electric field Ezm. Thus,
P
Ezm ( x p , y p , z) The Zmn and V appearing in Eq. 2.38 and Eq.m
=
2.51, respectively have to be computed using
i  G21( z , x) ( x p , y p , z, rs)  f m (rs)dS  (2.47) numerical integration techniques and properly
Sm accounting for the residue contribution of the surface
where the (z,x) component only of the dyadic wave poles. The unknown complex coefficients In are
( z ,x) determined after solving Eq. 2.39.
Green’s function G 21 is required.
2.3 Calculation of Input Impedance

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For the case when the dipole is excited by delta- The integrals in Eq. 2.57 and Eq. 2.58 are to be
gap generator, the input impedance may be found evaluated numerically. Thus, the expressions for Zmn
Vin and Vm constitute the bulk of the computational effort
Zin  for the microstrip dipole solution, and so it is critical
from
I in . So, if
Vin  1 , the input that these terms be calculated as efficiently as
1 possible. The singularities of the integrand correspond
Z in  to TM and TE surface waves. If the dielectric layers
impedance is simply I in .
are lossless, then the surface wave poles are on the
For a dipole excited by a probe, the input
impedance can be calculated as:  j
N
Re{k} axis between k0 and kj, where kj= k0 is
  I n VnP the wave number in the dielectric layer with higher
Zin = n=1 (2.53) dielectric constant. As illustrated in Figure 2.2, if the
where In are the expansion mode current dielectrics are lossy, then the poles move in the third
amplitudes and I is the probe current. quadrant. However, for low-loss dielectrics, the poles
2.4 Computational Efficiency are very close to the Re{k} axis. These poles must be
Because of the computational complexity of Eq. avoided in performing the numerical integration from
instead of performing the doubly infinite integrals in k=0 to. The conventional method of avoiding the poles
the (kx,ky) space, it is common to change to polar is to deform the contour from the Re{k} axis to the
coordinates (k) in the spectral domain, where contour C1 which makes a small half-circle around
kx = k cos  (2.54) each pole.
ky = k sin  (2.55) The integrals around the half-circle can be done
In this case, the integrations in Eq. 2.38 and Eq. in closed form by computing the residues at the poles.
2.52 undergo a transformation which can be This method works well for one layer structure and
symbolically shown as when the substrate is electrically thin, there is only
 one surface wave pole (TM surface wave pole).
However, for multilayered structure (or if the substrate
  U (k
-
x , k y ) dk x dk y
is not electrically thin), there can be several surface
=
2p 
wave poles. Also, analytically performing the
integrations around the half-circles will be
 d  dk  k U ( k ,  ) complicated if two or more poles are extremely close
0 0 (2.56) to each other. These problems can be entirely avoided
Thus, the doubly infinite integrals are reduced to by deforming the contour C1 into the contour C2.
a finite integration and a semi-infinite integration. The contour C2 goes down from the origin at 45
Also, the even and odd properties of the integrands angle until it is at height -jH below the Re{k} axis. It
can be used to reduce the  = 0  2  integration is then proceeded parallel to the Re{k} axis until it is
 past kj. Finally, it moves back up to the Re{k} axis
 =0 and then out to . The advantage of the contour C2 is
range to 2 . Eq 2.38 and Eq. 2.52 can then that numerical integration near the poles is avoided.
be written as Further, no knowledge of the pole locations or their
 /2  number is required. This method works well for H on
Z mn =  4i   d  dk  k  g
( x ,x )
11 k  ,  the order of 0.1k0 (Derneryd, 1977, Carver, 1979). If
the dipole is divided into equal-length segments, all
0 0
~ ~ ~ ~ the values of the N2 matrix elements are contained in

 Re n m  Re n m    any one row of [ Zmn], say the first one.

m = 1,2,..., N
n = 1,2,..., N (2.57)
and
 /2 

Vm =  4   d  dk  k 
( z ,x )
g 21 
k  , 
0 0

~ ik x ~ ik y
Im{ m e x p }  Re{n e y p } ,
Figure 2.2. Two paths of integration in the complex
k-plane
m=1,2,..., N (2.58)

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All other rows are morally a rearranged version Thus, to calculate the far-field expressions we
of the first. The remaining elements can be obtained need to calculate E0z and H0z in the upper half space
by the rearrangement algorithm (Lo et al., 1977)
Zmn = Z1,m-n+1, m 2, n 1, (2.59) (layer(0)) due to the current distribution J s ( r ) =
Such a matrix is said to be a toeplitz matrix. In xˆ J x ( x , y ) on the microstrip dipole in layer (1).
this case execution time is considerably reduced from: The electric field E0z can be obtained as
t  A N2 + BN3 (2.60)
zˆ  E 0 ẑ 
to E0z= = i
t  A N + BN5/3 (2.61)
where A is the time required to compute a typical  dr  G 01 ( r , r )  J s ( r )
impedance matrix element, B N3 is the time required S'
to solve [ Zmn] [ In] = [ Vm] for [ In] by matrix inversion ( z , x)
for a system of order N, where [ Zmn] is a non-teoplitz  dx dy G 01 (r , r ) J x ( x, y)
matrix. This time is reduced to BN5/3 by using a =i S' (2.67)
computer program for solving the teoplitz matrix. where
2.5 Radiation Field Evaluation G01(z , x ) ( r , r  ) = zˆ  G01 (r , r )  xˆ
The current distribution is radiating in the (2.68)
presence of the layered anisotropic medium. To find G01 (r , r ) can be obtained as (See Figure. 2.3).
the field patterns, the expression for electric and
magnetic field is obtained in the upper half-space. and r  in region (1) where z   h1
Using the dyadic Green's function in the upper half-
space due to the current distribution on the dipole. G01(z , x ) ( r , r  ) =
These fields are represented in terms of Sommerfeld- 
Weyl-type integrals. These integrals are calculated in
  dk x dk y eik s  ( rs  rs) g01
( z,x )
( k s , z, z )
the radiation zone or far-field region. Such integrals - (2.69)
can be evaluated with numerical integration routines,
but it becomes very tedious when observation point is
in the far field of the source, because the integrand is
rapidly oscillating. However, in the far-field region,
we can use the stationery phase method or the saddle
point method to evaluate the integral to obtain far-
field expressions. Here a method that captures the
essence of the stationary phase method is presented
and the far field approximations of the Sommerfeld-
weyl type integrals are derived. The result of this
calculation is correct asymptotically to the leading-
order which we are interested in.
2.6 The Electric and Magnetic Fields in the Upper-
Half-space Figure 2.3, Geometry of problem with sources in
In the upper-half space (region 0), the far-field region(1) and observation point in region (0).
satisfies the following relations:
E0 z For the case of uniaxially anisotropic medium,
E 0 =  G01(z , x ) ( r , r  )
sin  (2.62) =

1
E 0   dk x dk y e iks  ( rs rs) g01
( z ,x )
( k s , z, z )
H 0  0 -
= (2.63)
for TM waves, and where
H0z i 0 r1TM TM

H0 = sin ( z ,x )  (e)
X 0,1 zˆ 
g 01 ( k s , z, z ) 2 k
(2.64) = 8 1 z
E 0  0 H0
= (2.65) vˆ(k )e 0z
ik 0 z z

for TE waves, and

0 vˆk e( e)
1z
 k1( ze ) z  (e )
 
+ RTM1 e 2ik1 z h1 vˆ  k1(ze ) e ik1 z
(e )
z
 xˆ
0 = 0
(2.66)
(2.70)

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h The magnetic field in the upper half-space can be

where in our case z  = 1 since the dipole is
obtained from Maxwell's equations
on the boundary between layers (1) and (2), and
1
1   E0
TM TM 2 ik1( ze ) h1
H 0 = i 0 (2.79)
r1TM = 1  R 1 R 1 e (2.71) That is
TM
R1 TM 1
= R10 (2.72)
k 0 k 1(ze) H0 r  =
0
TM
X 0 k k1
1  RTM1  
,1
= 0z (2.73)  dx  dy    G 01 (r , r  )  J s ( x  , y  )
performing the dot product in Eq. 2.70, we get S (2.80)
TM where
 i 0 r 1
X TM0,1 
g ( z ,x)
( k s , z) 8 2 k0 i 0 e iks  ( rs  rs) e ik0 z z
01 =
G 01 (r , r ) = 8 2
  dk s
kx -
e ik0 z z e ik1 z
(e)
h1
 (e)
1  RTM1 e ik1 z h1  TE
k1 (2.74) {r 1
( h)
(h)
X TE0,1 eik1 z h1 hˆ(k0 z )
h k 1z
where z  is substituted by ( 1 ).
Thus, the z-component of the electric field in   ( h)
h k1 z + RTE1 e ik1 z h1 hˆ  k1(zh )
ˆ (h)
 } +
region (0) is given by TM
r ik1( ze ) h1
 0 1
X TM0,1 e vˆ(k 0 z )
 dx dy  J x ( x, y ) k (e )
1z
E0z( r ) = 8 2


S'
vˆk (e )
1z + R TM ik1(ze )h1
1 e 
vˆ  k1(zh )  (2.81)
(  i )   dk s Performing the curl operation, so:
x -  i 0
e
i k ( x  x  ) + k ( y  y  )  ik
x y
e 0zz
g E ( k s ) (2.75)   G01 (r , r ) = 8 2
where 

r1TM   dk s e iks  ( rs  rs) e ik0 z z 

X TM0,1 -
gE (ks ) =
k 0 k1 TE
{r 1
X TE0,1 e
ik1( zh ) h1
(ik 0 )vˆ(k 0 z )
e ik1(ze ) h1
1  R TM
1 e ik1( ze ) h1
 (2.76) k(h)
1z

(i)
  
hˆ k1(zh ) + RTE1 e ik1 z h1 hˆ  k1(zh) }
(h)
 
and kx is taken outside the integral as x . r1TM TM ik1(ze ) h1
(e)
X 0,1 e (ik 0 )hˆ(k 0 z )
Thus, E0z is obtained and expressed in Eq. 2.75 in k1z
terms of Weyl-type integral. E0z can also be expressed +
in terms of a Sommerfeld-type integral as

vˆk (e)
1z + R TM
1
(e)
e ik1 z h1 vˆ  k1(ze ) } (2.82)
(i) 0   dx  dy  J x ( x , y ) Hence, the magnetic field
H0z can be obtained
E0z = 4 S 

as
cos    dk  k 2 g E ( k  ) e ik0 z z J 1 k        1
0 (2.77) H0z= 0 zˆ  H
=
0
where we used the relation


 d x  d y  zˆ    G 01  xˆ J x ( x , y ) 
J 0 k        S (5.22)
x i
cos  k J1 k  -    (2.78) 2
 dx  dy  J x ( x , y  )
H0z = 8 S'

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 

( i )   dk s
y -   d
I= f() h(,)
 (2.91)
e
i k ( x  x  )+ k ( y  y  )  where f() is the slowly varying part, while
z z
e ik 0zz
g H (ks ) (2.83) h(,) is the rapidly varying part when  .
where Assuming here that h(,) is of the form
r1TE h(,) = eis( (2.92)
X TE0,1 Next, finding the stationary phase point of
g H (k s ) =
k1(zh ) h(,) which is given by the value of  where
e ik1( zh ) h1
1 + R TE
1 e ik1( zh ) h1
  S( )
 ( )
(2.84)   0
=0 (2.93)
where Most of the contributions to the integral in Eq.
1 5.31 will be from the vicinity of the stationary phase
(h) point. Hence, replacing the slowly varying part of the
r1TE =
1  RTE1 RTE1 e 2ik1 z h1 (2.85) integrand f() by its value at the stationary phase
point. By so doing, Eq. 2.91 becomes
R TE1 R10TE 
= (2.86)

=
X TE
1
0,1 1 + R  TE
(2.87)
 d
I ~ f() h(,),  
 (2.94)
Thus, H0z is obtained and expressed in terms of If the integral has a closed-form expression, Eq.
Weyl-type integral. In a similar way, H0z can be 2.94 is an analytic expression for the leading-order
expressed in terms of a Sommerfeld type integral as approximation of Eq.2.90. An illustration of how the
1 foregoing method is applied to find the far-field
 dx  dy  J x ( x , y )
approximations of Sommerfeld-Weyl-type integrals.
H0z = 4 S
The following two identities are used in this

approximation:
sin    dk  k 2 g H ( k  ) e ik0 Z z  J 1 k        1) The Weyl Identity (Richards and Lom 1981):
0 so
(2.88)
e 
 i kz x+k y y+kz z
where the relation e ikr i
  dk x dk y

J 0 k       r = 2 - (2.95)
kz
y = 2) The Sommerfeld Identity (Richards and Lom
1981): thus
sin  J 1 k       
i k  (1)
(2.89) e ikr dk  H 0 k   e ik z z  
Can be written. 2  k
r = - z
(2.96)
2.7 Leading-Order Approximations to 2 2 2
kz k  k x  k y
Sommerfeld-Weyl-Type Integrals In Eq.2.95, = , and in
Let us consider an integral of the type 2 2
 k  k  k
Eq. 2.96 z =
I

 d g ( ,  ) Let as consider first a Weyl-type integral in the
form we encountered for the fields in the upper half-
(2.90)
where  is a large parameter. If the integrand space as

becomes rapidly oscillating when  is large, and it
there exists a simple stationary phase point in the   dk x dk y g k x , k y  
e 
i kz x + k y y + k z z
integrand, we can evaluate a leading order I1 = - (2.97)
approximation of Eq. 5.30 using the method of where kz is defined in Eq. 2.95. When x, y, or z
stationary phase (Lo et al., 1979). are large, the integrand in Eq. 2.97 is rapidly
The first step in the procedure is to factorize the oscillating, and the integral is amenable to the
integrand g(,) into two parts, a slowly varying stationary phase approximation. With the Weyl
part and a rapidly varying part. So, we let identity in mind, factorizing the integrand into slowly

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varying part and a rapidly varying part which can be Let us next consider a Sommerfeld-type integral
integrated in closed form; that is, writing of the form
 

  dk
-
x 
dk y g k x , k y k z    dk  k  g  k   J
n
n ( k   ) eikz z
I1 = I2 =  (2.103)
 e i  k z x + k y y + k z z  
Where kz is defined following Eq. 2.96. When
   , using the large argument approximation for
 kz 
(2.98) the Bessel function, notice that the integrand does not
By virtue of the stationary phase method have a well-defined stationary phase point. To obtain
argument, contributions to the integral will come from an integrand with the form of Eq. 2.96, it is most
around the point where the phase of the exponential appropriate to convert the above integral from a semi-
function is stationary. Hence, looking for the infinite integral to an infinite integral and replace the
stationary phase point in the two-dimensional kx-ky Bessel function with a Hankel function. This will lead
space which is given by to the use of the Sommerfeld identity given in Eq.
 2.96.
Before proceeding any further, notice that Eq.
 k x i  k x x + k y y + k z z  =0, 2.103 is also obtained when writing Eq. 2.97 in terms
of cylindrical coordinates by letting

kx = k cos, ky = k sin, x = cos, y = sin (2.104)
k y i  k x x + k y y + k z z  Then Eq. 2.97 becomes
=0 (2.99)  2
This is easily solvable to give the stationary
phase point at  dk  k   d gˆ k  , 
0 0
x y I1=
ik   cos(   )  ik z z
kx0 = k r , ky0 = k r (2.100)
e (2.105)
g (k
x2 + y2 + z2 where  ) = g(k cos k sin).
where r = . Eq. 2.97 or Eq.
2.98 can be physically interpreted as expansions in a Next,
g (k) can be expanded in Fourier series in
spectrum of plane waves. The physical interpretation the -variable as:
of the stationary phase point, as expressed by Eq. 

k -vector e in 
gˆ n k  
2.100, is that only the plane wave whose g (k
 )=
n =- (2.106)
k = xˆk x + yˆk y + zˆk z 
points from the source Substituting back Eq. 2.106 into Eq. 2.105 and
point to the observation point is important in making use of the following integral identity for the
evaluating the field at the observation point. By Bessel function
2
replacing the slowly varying part of the integrand in 1
Eq. 2.98 with its value at the stationary phase point,  d ik   cos  in in /2
getting: Jn(k)= 2 0 e (2.107)
 i ( k xx +k y y+kz z ) Obtaining
  dk x dk y e  

I1 ~ g(kx0,ky0) kz0  , r
kz
 2 e in +in /2
 dk  k  gˆ k  
n
(2.101) I1 = n =-  0 Jn(k)
Using Weyl identity, Eq. 2.101 can be evaluated ikz z
in closed form to obtain the leading-order e (2.108)
approximation to the integral as Now identity each term in the series to be similar
e ikr to Eq. 2.103. From Eq. 2.106, if we denote (kx,ky) by
(k) in cylindrical coordinates, then the point (
I1 ~ 2 i g(kx0, ky0) kz0 r ,r  (2.102)  k x , k y k 
where ) can be denoted by (k) or ( ). Because
of this, deduce that
k 0z  k 2  k x20  k y20  k z / r ĝ ( k  )= ein ĝ
. n n(k) (2.109)

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Hence the function gn(k) in Eq. 2.103 which is k 0

=k sin, kz0 = k cos (2.115)
ĝ
similar to n(k) in general has the above property. With = sin-1(r, as the angle of the
Next, by using the identity for Bessel functions in observation point with respect to source point. Now
terms of Hankel functions, evaluating the slowly varying part of the integrand at

i.e. Jn(x) = 2 n n
1
H ( 1)
( x)  H (2) ( x )  the stationary point and use Sommerfeld identity to
evaluate the rapidly varying part in closed form.
(Abramowitz and Stegun, 1986), writing Eq. 2.103 as As a result

H n(1) ( k  0  )
1
2  dk  k  g  k  
n
H (1)
k  e

ikz z
 H
i g n k  0 (1)
(k 0 )
k z0 e ikr
I2 = 0 n
I2~ 0 r ,
 r
1
2  dk  k  g  k   n

H n( 2 ) k   eikz z 
(2.116)
+ 0 (2.110) When r   , using the large argument
k  approximation of the Hankel function to simplify
With the change of variables from k to for
the second integral, the use of the property of the
H n(1) k   
Hankel function that H 0(1) k    in /2 k 
~e ,  (2.117)
H (2)
n
 x e  = e
 i  in 
H ( 1)
n ( x ) [13], and the Hence Eq. 2.116 is simplified to
property for gn(k) given by Eq. 2.109, combining the e ikr
two integrals in Eq. 2.110 into one integral as
 I2 ~
( i ) n 1
 
gn k 0 k z0 r , r

 dk  k  g  k  
1 (2.118)

I2 = 
2
n 
n
e H (1) k    ikz z
2.8 Far-Field Expressions
(2.111) The results obtained in section Eq.2.63 are
The integrand in Eq. 2.111 is rapidly oscillating applied to find the far-field expressions.
when  or z tends to  because The z- component of the electric field in the
2 upper half-space given by Eq. 2.77, can be written as
H (1)
n  x ~ x ei  xn /2- /4 i 0
(2.112)
when x  (Newman and Tulyathan, 1981). E0z( r ) = 4
Next factorizing the integrand in Eq. 2.111 into two
parts so that Sommerfeld identity can be used in Eq.  dx  dy  J x ( x , y ) cos I E
2.96. Consequently, S

 H ( k   )  (1) (2.119)
1
 
dk   gn k  H0(1) ( k   ) k z 
2
n
where

I2 =  
 k (1) ik z z 
 dk  k 
2
 
gE k
ik 0 z z 
J1 k      
 k H0 k   k z e 
 z
  
IE =
(2.120)
0 e
(2.113)
In view of Eq. 2.112, the first factor in Eq. 2.113 which can be put in the form

is slowly varying while the second factor is rapidly
varying when r  (i.e. when the observation point
1
2  dk  k 
2
 
gE k
is far from the field point). Since the rapidly varying IE=  e ik0 z z
part of the integrand is asymptotic to the phase factor
ik  ik z z

H1(1) k      
(2.121)
e , the location the stationary phase point is Using the large argument approximation for the
given by Hankel function, the rapidly varying part of the
 integrand in Eq. 2.121 is asymptotic to the phase
i k    k z z  ik      ik0 z z
k  factor e . Thus, the location of the
k 0
=0 (2.114) stationary phase point is given by
The solution of Eq. 2.114 is

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

i k       k 0z z    dx  dy  J x ( x , y )
 k k0
e ik0 
(2.127)
=0 (2.122) Thus, using Eq. 2.62 - Eq.2.65, the field patterns
The solution is given by are readily obtained.
k 0
= k0 sin,
k0z0 = k0 3. Results
cos Numerical results of the problem of a microstrip
 dipole embedded in a substrate-superstrate structure
(2.123) are presented. Numerical computations investigating
the effects of the thickness and the anisotropy of the
   layers on the dipole current distribution and input
r   impedance are performed. Also, the radiation patterns
with = sin-1 , (see Figure2.4). of the microstrip dipole printed in the considered
substrate-superstrate structures are calculated.
The numerical computations for the problem
under consideration using the dyadic Green’s function
(DGF) formulation where the moment method (MM)
is applied in spectral domain (SD). A microstrip

dipole of length L = 0.5 0 and width W = 0.0001 0

, on the top of an isotropic substrate of permittivity
 1  325
. 0 and thickness
h1  01016
. 0.

3.1 Printed Dipole on a Single Layer

Figure 2.4, Relation between
 and 

This leads to the following expression for IE

 i /2 e ik0 r   
e k 0z 0
IE ~
 
 i g E k0 k0 r  
,
r (2.124)
But
r   ~
 r  rˆ   
,
thus
e ik 0 r Figure 3.1. Magnitude of current distribution of a
k 0 e ik 0   printed microstrip dipole on a single layer using delta
IE ~ k02 sin cos gE( ) r ,r gap generator with W/2 = 0.0001l0 , L= 0.5 l0, h =0.08l0.
(2.125)
Thus, Figures 3.1show, the magnitude of the current
i 0 e ik r 0

k distribution of a printed microstrip dipole on a single

E0z( r )~ 4 k0 sin cos cos gE( 0 ) r
2 
layer. The figures indicate that the current distribution
undergoes significant changes if the isotropic substrate
  dx  dy  J x ( x , y )
e ik0  
(2.126) with
  6 0 I is substituted by an anisotropic
Following similar procedure, getting the   6 0 ,  z  10.2 0 ,
magnetic field in the upper half-space as r  substrate of The magnitude
the following expression of the current distribution of the dipole on the
anisotropic substrate exhibits a rise at the feeding
i e ik r 0

point. Figures 3.2(a) and 3.2(b) show, respectively, the

k
H0z( r ) ~ 4 k02 sin cos sin gH(  ) r 0 real and imaginary parts of the input impedance. It is
clear that the effect of the positive anisotropy

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 Life Science Journal 2015;12(4)
z
(  1)
 of the substrate is to decrease the resonant
length relative to the isotropic substrate. Also, the
impedance level of the printed dipole on the
anisotropic substrate is lower than the dipole on an
isotropic substrate. Finally, Figures 3.3(a) and 3.3(b)
show, respectively, the E - and H - radiation patterns
of the printed dipole. For this considered case, there is
no significant differences between the isotropic and
anisotropic substrates. However, the H - plane
radiation plot shows a slightly lower directivity for the
printed dipole on the anisotropic substrate.
Figure 3.2(a), Real part of the input impedance of a
printed microstrip dipole on a single layer using delta
gap generator with W/2 = 0.0001l0, h =0.08l0
Figure 3.2(b), Imaginary part of the input impedance
of a printed microstrip dipole on a single layer using
delta gap generator with W/2 = 0.0001l0, h =0.08l0.
Figure 3.3(a), E-plane radiation plot of a printed
microstrip dipole on a single layer using delta gap
generator with W/2 = 0.0001l0, h =0.08l0.
13
http://www.lifesciencesite.com
Figure 3.3(b), H-plane radiation plot of a printed
microstrip dipole on a single layer using delta gap
generator with W/2 = 0.0001l0, h =0.08l0.
3.2 Effect of the superstrate thickness
The effect of the superstrate (cover-layer)
thickness is investigated for a printed dipole in a
substrate-superstrate configuration. The cover-layer is
assumed to be isotropic with permittivity
 1  325
.  0 I , 1  0 I
while the substrate is assumed to be uniaxially
6 0 0 
2   0  0 6 0 
 0 0 10 .2 
anisotropic with
1   0 I
The substrate thickness
. 0
h2  008 . The

dipole of length L =0.5 0 and width W = 0.0001 0

is fed at the center. The effects of the dielectric cover
thickness on the dipole current distribution, input
impedance, and radiation patterns are determined. The
results are shown in Figures 3.4-3.6, and the following
comments are pertinent: 1). The real part of the
current distribution, shown in Fig. 3.4(a) is more
influenced by the dielectric cover thickness near the
center of the dipole. The effect of the thickness of the
dielectric cover is negligible when it is increased from
h1  0.05 0 to 1
. 
h  011 0 . 2). The imaginary
part of the current distribution, given in Fig. 3.4(b),
also shows some what larger influence of the
dielectric cover thickness near the center of the dipole.
In addition, it is noted that increasing h1, the current
level is decreased at the center of the dipole. 3). The
magnitude of the current distribution, given in Fig.
3.4(c), also shows that the current level is decreased at
the center as the thickness of the cover layer increases,
however this increase is small in the range of h1 values
considered. The above mentioned effects of the cover
dielectric layer were also observed for printed dipoles
on isotropic substrates (Newman, 1978). Figures
3.5(a) and 3.5(b) show curves for the real and
 Life Science Journal 2015;12(4) http://www.lifesciencesite.com

imaginary parts of the input impedance at the center of

the dipole, respectively, for various values of the
dielectric cover thickness h1. The decrease of the
dipole’s resonant length for any structure with cover-
layer relative to the case with the cover layer thickness
h1 = 0 is evident from an inspection of the imaginary
part of the input impedance given in Fig. 3.5(b). Also
the resonant frequency decreases as the cover
thickness increases from h1 = 0 to h1 = 0.05 0 ,

Figure 3.5(a), Real part of the input impedance of a
however it increases for values of h1 larger than 0.05
printed microstrip dipole using delta gap generator
 0 . This effect has also been observed for microstrip with W/2 = 0.0001l0 , h2 = 0.08 l0, e1 =3.25
dipoles printed in isotropic structures (Uzunoglu et al., e0 I, e2 = 6 e0, ez2 = 10.2 e0
1979). Figures 3.6 show the E- plane radiation
patterns for different values of the cover layer
thickness.

Figure 3.5(b), Imaginary part of the input impedance

of a printed microstrip dipole using delta gap
generator with W/2 = 0.0001l0, h2 = 0.08l0, e1 =3.25
e0 I, e2 = 6 e0, ez2 = 10.2 e0
Figure 3.4(a), Real part of current distribution of a
printed microstrip dipole using delta gap generator
with W/2 = 0.0001l0, L= 0.5 l0, h2 =0.08l0, e1 =3.25 e0,
I, e2= 6 e0, ez2 = 10.2 e0

Figure 3.6, E-plane radiation plot of a printed

microstrip dipole using delta gap generator with W/2 =
Figure 3.4(b), Imaginary part of current distribution of 0.0001l0 , h2 = 0.08 l0, e1 =3.25 e0
a printed microstrip dipole using delta gap generator I, e2 = 6 e0, ez2 = 10.2 e0
with W/2 = 0.0001l0, L= 0.5 l0, h2 =0.08l0, e1 =3.25, e0
I, e2= 6 e0, ez2 = 10.2 e0 3.3 Effect of substrate anisotropy
The effect of substrate anisotropy on the
performance of a printed microstrip in substrate-
superstrate structure is presented her. The analysis
presented in this research is general enough to treat
both positive uniaxial (
z  x ) and negative
uniaxial.
 
( z x ) cases, as well as wide range of
anisotropy ratio
Figure 3.3(c), Magnitude of the current distribution of
a printed microstrip dipole using delta gap generator z
with W/2 = 0.0001l0,, L= 0.5 l0, h2 = 0.08l0, e1 =3.25 e0
(AR =
x ), most substrates in common use are
I, e2= 6 e0, ez2 = 10.2 e0
negative uniaxial. As a practical example, is the

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 Life Science Journal 2015;12(4) http://www.lifesciencesite.com

Epsilam-10 material having is less directive while the H- plane is more directive
 x  130
.  0 ,  z  102
. 0. than the isotropic case).
Figure. 3.7(a) shows the real part of the dipole’s
current distribution for a printed dipole on an
anisotropic substrate and having isotropic superstrate.
Three different substrates are considered; where
 z 10.2 z
  17
. , 1
x 6 x (isotropic case), and
 z 10.2
  0.7846
x 13 . The figure shows that the
anisotropy ratio has great influence on the real part of
the current distribution. Substrates with negative
uniaxial material has the largest variation of the real
part of the current distribution, while substrates with Figure 3.7(a), Real part of current distribution of a
positive uniaxial material has the smallest variation. printed microstrip dipole using delta gap generator
Figure 3.7(b) shows that the imaginary part of the with W/2 = 0.0001l0 , L= 0.5 l0, h1 = h2 =
dipole’s current distribution does not depend too much 0.08 l0,e1 =3.25 e0 I,ez2 = 10.2 e0
on the anisotropy ratio. However, the current level is
decreased for the case of positive uniaxial material.
Fig. 3.7(c) shows that the magnitude of the
dipole’s current distribution is the highest for
substrates with negative uniaxial material. Figures
3.8(a) and 3.8(b) show the real and imaginary parts,
respectively, of the input impedance of the printed
microstrip dipole, as function of the electrical length
of the dipole for different values of the anisotropy
ratios. It is observed that as the anisotropy ratio (AR)
decreases, the resonant length of the dipole decreases.
Also, the magnitude of the real part of the input
impedance decreases with the decrease of the AR. The
figures also show that the shift in resonant frequency
is about equal to the bandwidth of the microstrip
dipole. This implies that a dipole designed for a Figure 3.7(b), Imaginary part of current distribution of
specific operating frequency may actually resonant a printed microstrip dipole using delta gap generator
outside the dipole bandwidth if the substrate with W/2 = 0.0001l0, L= 0.5 l0, h1 = h2 = 0.08 l0, e1
anisotropy is neglected (not considered). Similar =3.25 e0 I, ez2 = 10.2 e0
conclusion was obtained (Mosig and Gardiol, 1979),
for microstrip antennas on single anisotropic substrate.
Figures 3.11(a) and 3.11(b) show, respectively, the E-
and H- plane radiation patterns for three cases:
isotropic substrate with
 2   z2  10.2  0 ,
positive uniaxial substrate with
 2  6  0 ,  z2  10.2  0 , and negative uniaxial
substrate with 2
  13 0 ,  z 2  10.2  0 .In these
Figure 3.7(c), Magnitude of the current distribution of
a printed microstrip dipole using delta gap generator
three cases the superstrate is assumed to be isotropic. with W/2 = 0.0001l0 , L= 0.5 l0, h 1 = h2 =
The figures show that for the positive uniaxial 008 l0, e1 =3.25 e0 I, ez2 = 10.2 e0
substrate, the E-plane radiation pattern has higher
directivity than the isotropic case while the H- plane
3.4 Effect of cover-layer anisotropy
radiation pattern has lower directivity. The radiation Figures. 3.10(a)- 3.10(c) show, respectively,
patterns of the printed circuit dipole on a negative the real part, imaginary part, and the magnitude of the
uniaxial substrate exhibits opposite property (E-plane current distribution of a printed dipole in a two-layer

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microstrip structure having isotropic substrate and

anisotropic superstrate. It is observed that the behavior
of the current distribution is almost the same as the
previous case where the substrate is anisotropic with
isotropic cover-layer. However, the variation of the
imaginary part of the current distribution is more
pronounced (Figures 3.11(a) and3.11(b) show,
respectively, the real and imaginary parts of the
dipole’s input impedance. The data show similar
behavior to that observed in the previous case. Here, it
is also observed that the resonant length of the dipole Figure 3.9(a), E-Plane radiation plot of a printed
decreases with decrease of the anisotropy ratio. microstrip dipole using delta gap generator with W/2 =
Figures 3.12(a) and 3.12(b) show, respectively, the E- 0.0001l0 , h1 = h2 = 0.08l0, e1 =3.25
and H- plane radiation patterns as function of the AR e0 I, ez2 = 10.2 e0
of the superstrate where the substrate is isotropic
dipole. Observe the singularly in the dipole current at
the probe location. Figure 3.14 shows the real and
imaginary parts of the input impedance. Since the
problem is formulated using an idealized probe feed
which does not account to the probe self reactance, a
self inductive reactance term
X p  60 k 0 h2 ln(k 2e R )
is added to the result as a
correction factor (Dernerydm, 1977). Finally, Figure
Figure 3.9(b), H-Plane radiation plot of a printed
3.15 shows the radiation pattern for this case.
microstrip dipole using delta gap generator with W/2 =
0.0001l0 , h1 = h2 = 0.08l0, e1 =3.25
e0 I, ez2 = 10.2 e0

Figure 3.8(a), Real part of the input impedance of a

printed microstrip dipole using delta gap generator
with W/2 = 0.0001l0, h1 = h2 = 0.08 l0, e1 =3.25 Figure 3.10(a), Real part of current distribution of a
e0 I, ez2 = 10.2 e0 printed microstrip dipole using delta gap generator
with W/2 = 0.0001l0 , L= 0.5 l0, h 1 = h2 =
0.08l0, e2 =3.25 e0 I, ez1 = 10.2 e0

Figure 3.8(b), Imaginary part of the input impedance

of a printed microstrip dipole using delta gap
generator with W/2 = 0.0001l0, h1 = h2 = 0.08 l0, Figure 3.10(b), Imaginary part of current distribution
e1 =3.25 e0 I, ez2 = 10.2 e0 of a printed microstrip dipole using delta gap
generator with W/2 = 0.0001l0, L= 0.5 l0, h1 = h2 =
0.08l0, e2 =3.25 e0 I, ez1 = 10.2 e0

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Figure 6.12(b), H-Plane radiation plot of a printed

Figure 3.10(c), Magnitude of the current distribution microstrip dipole using delta gap model with W/2 =
of a printed microstrip dipole using delta gap 0.0001l0 , h1 = h2 = 0.08 l0, e2 =3.25
generator with W/2 = 0.0001l0, L= 0.5 l0, h1 = h2 = e0 I, ez1 = 10.2 e0
0.08l0, e2 =3.25 e0 I, ez1 = 10.2 e0
3.5 Probe-fed printed circuit dipole
Figure 3.13 shows the real and imaginary part of
the current distribution of a probe-fed microstrip

Figure 3.11(a), Real part of input impedance of a

Figure 3.13. Current distribution of a printed
printed microstrip dipole using delta gap generator
microstrip dipole for probe excitation with radius
with W/2 = 0.0001l0 , h1 = h2 = 0.08 l0,
R=0.0004l0, W/2 = 0.0008l0, L=0.25 l0, h 1 = h2
e2 =3.25 e0 I, ez1 = 10.2 e0
=0.08l0, e1 =3.25 e0, I, e2 = 13 e0, ez1 = 10.2 e0, x0
=0.239833l0

Figure 3.11(b), Imaginary part of input impedance of a

Figure 3.14, Input impedance of a printed microstrip
printed microstrip dipole using delta gap generator
dipole for probe excitation with radius R=0.0004l0,
with W/2 = 0.0001l0 , h1 = h2 = 0.08 l0,
W/2 = 0.0008l0 , h 1 = h2 =
e2 =3.25 e0 I, ez1 = 10.2 e0
0.08l0, e1 =3.25 e0 I, e2 = 13 e0, ez1 =
10.2 e0, x0 =0.239833l0

Figure 6.12(a), E-Plane radiation plot of a printed

microstrip dipole using delta gap model with W/2 =
0.0001l0 , h1 = h2 = 0.08 l0, e2 =3.25
e0 I, ez1 = 10.2 e0 Figure 3.15, E and H Planes radiation plot of a
printed microstrip dipole for probe excitation with

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R=0.0004l0 W/2 = 0.0008l0, h1 = h2 = 0.08 l0, Lr

= 0.175 l0, e1 =3.25 e0 I, e2 =13e0, e z2 =
10.2 e0, x0 = 0.239833l0

3.6 Farfield Directivities of one Printed Dipole

on Two-Layer Substrates
A two-layer Substrates for a printed dipole with
an anisotropic substrate was considered now. The
printed dipole was placed two in layers substrates,
with thickness were set ℎ = 01016 and ℎ =
0.08 .(See Table 1).

Table 1. Farfield Directivities of Printed microstrip

patches placed in different Layers. Figure 3.18, Printed microstrip patch placed on the top
Phi Gain Phi in Theta Gain Theta in of a isotropic substrate (2 Layers – 1 Patch) with patch
dBi degree dBi degree
1 Layer 1 dipole (2.3) 2.3 90 4.9 81
Length L = 0.6 λ0, Width W=0.0004 λ0, Substrate
2 Layer 1 dipole (2.3) 0.6 30 1.8 102 Thickness h1= 0.1016 λ0 and ε1 =2.3 ε0
2 Layer 1 dipole (6,6,10.2) 4.7 0 4.3 294
2 Layer 1 dipole
4.8 0 1.4 196.7
(10.2,10.2,10.2) 3.6.2 For anisotropic case
2 Layer 1 dipole
(13,13,10.2)
4.7 40 6.9 233 Where = = 6 = 10.2 . The
2 Layer 2 dipole (2.3)
2 Layer 2 dipole (6,6,10.2)
0.8
5.7
4
0
5.1
4.1
252
250
main lobe magnitude for Phi =90 was 4.7 dB with 0
2 Layer 2 dipole
5.2 0 1 259
degree main lobe direction. But the main lobe
(10.2,10.2,10.2)
2 Layer 2 dipole
magnitude for Theta =90 was 4.3 dB with 294 degree
4.7 37 6.6 306
(13,13,10.2) in main lobe direction.
3.6.1 For isotropic case
Where = = = 2.3 . The main lobe
magnitude for Phi =90 was 0.6 dB with 30 degree
main lobe direction. But the main lobe magnitude for
Theta =90 was 1.8 dB with 102 degree in main lobe
direction.

Figure 3.19, Farfield Directivity (ɵ = 90o) of Patch

placed on the top of an anisotropic substrate (2 Layers
– One Patch) with Length L = 0.6 λ0, Width
W=0.0004 λ0, Substrate Thickness h10.1016 λ0 and ε1
=3.25 ε0, εx = εy = 6 ε0, εz= 10.2 ε0
Figure 3.16, Farfield Directivity (φ = 90o) of Patch
placed on the top of a isotropic substrate (2 Layers – 1
Patch) with Length L = 0.6 λ0, Width W=0.0004 λ0,
Substrate Thickness h1= 0.1016 λ0 and ε1 =2.3 ε0

Figure 3.20, Farfield Directivity (φ = 90o) of Patch

o
Figure 3.17, Farfield Directivity (ɵ = 90 ) of Patch
placed on the top of a isotropic substrate (2 Layers – 1
Patch) with Length L = 0.6 λ0, Width W=0.0004 λ0,
Substrate Thickness h1= 0.1016 λ0 and ε1 =2.3 ε0
placed on the top of a anisotropic substrate (2 Layers –
1 Patch) with Length L = 0.6 λ0, Width W=0.0004 λ0,
Substrate Thickness h1= 0.1016 λ0 and ε1 =3.25 ε0, εx =
εy = 6 ε0, εz= 10.2 ε0

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Figure 3.24, Printed microstrip patch placed on the top

Figure 3.21, Printed microstrip patch placed on the top
of a isotropic substrate (2 Layers – 1 Patch) with patch
Length L = 0.6 λ0, Width W=0.0004 λ0, Substrate
Thickness h1= 0.1016 λ0 and ε1 =3.25 ε0, εx = εy = 6 ε0,
εz= 10.2 ε0
of a isotropic substrate (2 Layers – 1 Patch) with patch
Length L = 0.6 λ0,Width W=0.0004 λ0, Substrate
Thickness h1= 0.1016 λ0 and ε1 =3.25 ε0

3.6.3 For isotropic case

Where = = = 10.2 . The main lobe
magnitude for Phi =90 was 4.8 dB with 0 degree main
lobe direction. But the main lobe magnitude for Theta
=90 was 1.4 dB with 196.7 degree in main lobe
direction. Figure 3.25, Farfield Directivity (ɵ = 90o) of Patch
placed on the top of a isotropic substrate (2 Layers – 1
Patch) with Length L = 0.6 λ0, Width W=0.0004 λ0,
Substrate Thickness h1= 0.1016 λ0 and ε1 =3.25 ε0, εx =
εy = 13 ε0, εz= 10.2 ε0

Figure 3.22, Farfield Directivity (φ = 90o) of Patch

placed on the top of a isotropic substrate (2 Layers – 1
Patch) with Length L = 0.6 λ0, Width W=0.0004 λ0,
Substrate Thickness h1= 0.1016 λ0 and ε1 =10.2 ε0
Figure 3.26, Farfield Directivity (φ = 90o) of Patch
placed on the top of a isotropic substrate (2 Layers – 1
Patch) with Length L = 0.6 λ0, Width W=0.0004 λ0,
Substrate Thickness h1= 0.1016 λ0 and ε1 =3.25 ε0, εx =
εy = 13 ε0, εz= 10.2 ε0

Figure 3.23, Farfield Directivity (ɵ = 90o) of Patch

placed on the top of a isotropic substrate (2 Layers – 1
Patch) with Length L = 0.6 λ0, Width W=0.0004 λ0,
Substrate Thickness h1= 0.1016 λ0 and ε1 =10.2 ε0
Figure 3.27, Printed microstrip patch placed on the top
of a isotropic substrate (2 Layers – 1 Patch) with patch
Length L = 0.6 λ0,Width W=0.0004 λ0, Substrate
Thickness h1= 0.1016 λ0 and ε1 =3.25 ε0

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3.6.4 For anisotropic case

Where = = 13 = 10.2 . The
main lobe magnitude for Phi =90 was 4.7 dB with 40
degree main lobe direction. But the main lobe
magnitude for Theta =90 was 6.9 dB with 233 degree
in main lobe direction.

3.7 Farfield Directivities of Two Printed

Dipoles on Two-Layer Substrates
A two-layer Substrats for Two printed dipoles
with an anisotropic superstrate was considered nest.
The printed dipole in Fig. 1 was placed two layers
substrats, with thickness were set ℎ = 01016 and
ℎ = 0.08 . See Table 1.
Figure 3.30, Printed microstrip patch placed on the top
of a isotropic substrate (2 Layers – 2 Patches) with
patch Length L = 0.6 λ0,Width W=0.0004 λ0,
Substrate Thickness h1= 0.1016 λ0 and ε1 =2.3 ε0

3.7.1 For isotropic case

Where = = 2.3 . The main lobe
magnitude for Phi =90 was 0.8 dB with 4 degree main
lobe direction. But the main lobe magnitude for Theta
=90 was 5.1 dB with 252 degree in main lobe
direction.

Figure 3.31, Farfield Directivity (ɵ = 90o) of Patch

placed on the top of a isotropic substrate (2 Layers – 2
Patches) with Length L = 0.6 λ0, Width W=0.0004 λ0,
Substrate Thickness h1= 0.1016 λ0 and ε1 =3.25 ε0, εx =
εy = 6 ε0, εz= 10.2 ε0

Figure 3.28, Farfield Directivity (ɵ = 90o) of Patch

placed on the top of a isotropic substrate (2 Layers – 2
Patches) with Length L = 0.6 λ0, Width W=0.0004 λ0,
Substrate Thickness h1= 0.1016 λ0 and ε1 =2.3 ε0
Figure 3.32, Farfield Directivity (φ = 90o) of Patch
placed on the top of a isotropic substrate (2 Layers – 2
Patches) with Length L = 0.6 λ0, Width W=0.0004 λ0,
Substrate Thickness h1= 0.1016 λ0 and ε1 =3.25 ε0, εx
= εy = 6 ε0, εz= 10.2 ε0

3.7.2 For anisotropic case

Where = = 6 = 10.2 . The
main lobe magnitude for Phi =90 was 5.7 dB with 0
degree main lobe direction. But the main lobe
magnitude for Theta =90 was 4.1 dB with 250 degree
Figure 3.29, Farfield Directivity (φ = 90o) of Patch in main lobe direction.
placed on the top of a isotropic substrate (2 Layers – 2
Patches) with Length L = 0.6 λ0, Width W=0.0004 λ0,
Substrate Thickness h1= 0.1016 λ0 and ε1 =2.3 ε0

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Figure 3.36, Printed microstrip patch placed on the top

Figure 3.33, Printed microstrip patch placed on the top
of a anisotropic substrate (2 Layers – 2 Patches) with
patch Length L = 0.6 λ0,Width W=0.0004 λ0,
Substrate Thickness h1= 0.1016 λ0 and ε1 =3.25 ε0, εx =
εy = 6 ε0, εz= 10.2 ε0
of a isotropic substrate (2 Layers – 2 Patches) with
patch Length L = 0.6 λ0,Width W=0.0004 λ0,
Substrate Thickness h1= 0.1016 λ0 and ε1 =10.2 ε0
3.7.3 For anisotropic case
Where = = = 10.2 . The main lobe
magnitude for Phi =90 was 5.2 dB with 0 degree main
lobe direction. But the main lobe magnitude for Theta
=90 was 1 dB with 259 degree in main lobe direction.

3.7.4 For anisotropic case

Where = = 13 = 10.2 . The
main lobe magnitude for Phi =90 was 4.7 dB with 37
degree main lobe direction. But the main lobe
magnitude for Theta =90 was 6.6 dB with 306 degree
in main lobe direction

Figure 3.34, Farfield Directivity (ɵ = 90o) of Patch

placed on the top of a isotropic substrate (2 Layers – 2
Patches) with Length L = 0.6 λ0, Width W=0.0004 λ0,
Substrate Thickness h1= 0.1016 λ0 and ε1 =10.2 ε0

Figure 3.37, Farfield Directivity (φ = 90o) of Patch

placed on the top of a isotropic substrate (2 Layers – 2
Patch) with Length L = 0.6 λ0, Width W=0.0004 λ0,
Substrate Thickness h1= 0.1016 λ0 and ε1 =3.25 ε0, εx =
εy = 13 ε0, εz= 10.2 ε0

3.8 Single-Element Antenna Design and

Improved Single-Element Antenna Design by using
Figure 3.35, Farfield Directivity (φ = 90o) of Patch anisotropic layer
placed on the top of a isotropic substrate (2 Layers – 2 The design parameters for the antenna are
Patches) with Length L = 0.6 λ0, Width W=0.0004 λ0, detailed below:
Substrate Thickness h1= 0.1016 λ0 and ε1 =10.2 ε0  L= 10.40 mm(Antenna length)
 W= 25.4 mm (Antenna Width)
 H= 1.48 mm (Substrate Height)
 ∈ = 4.3 (Permittivity of FR4)
 Mt=.038 mm (Metal Thickness)

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 Mt=.038 mm (Metal Thickness)

For layer 2
 L2= 10.40 mm(Antenna length)
 W2= 25.4 mm (Antenna Width)
 H2= 1.48 mm (Substrate Height)
 ∈ ( , , ) = (6,6,10.2)
 Mt=.038 mm (Metal Thickness)
Figure 3.38, Farfield Directivity (ɵ = 90o) of Patch
placed on the top of a isotropic substrate (2 Layers – 2
Patches) with Length L = 0.6 λ0, Width W=0.0004 λ0,
Substrate Thickness h1= 0.1016 λ0 and ε1 =3.25 ε0, εx =
εy = 13 ε0, εz= 10.2 ε0

Figure 3.41 Farfield realized gain plot for patch

antenna (∈ ( , , ) = (6,6,10.2))

The Improved design (2) parameters for the

antenna are detailed below:
For layer 1
Figure 3.38, Printed microstrip patch placed on the top  L1= 10.40 mm(Antenna length)
of a isotropic substrate (2 Layers – 2 Patches) with  W1= 25.4 mm (Antenna Width)
patch Length L = 0.6 λ0,Width W=0.0004 λ0,  H1= 1.48 mm (Substrate Height)
Substrate Thickness h1= 0.1016 λ0 and ε1 =3.25 ε0, εx =  ∈ ( , , ) = (10.2,10.2,10.2)
εy = 13 ε0, εz= 10.2 ε0
 Mt=.038 mm (Metal Thickness)
For layer 2
 L2= 10.40 mm(Antenna length)
 W2= 25.4 mm (Antenna Width)
 H2= 1.48 mm (Substrate Height)
 ∈ ( , , ) = (10.2,10.2,10.2)
Figure 3.39 The patch antenna
 Mt=.038 mm (Metal Thickness)
The farfield realized gain plots is within
acceptable range to deem the antenna an effective and
efficient radiator in the ISM band.

Figure 3.42 Farfield realized gain plot for patch

antenna (∈ ( , , ) = (10.2,10.2,10.2))

Figure 3.40. Farfield realized gain plot for patch The Improved design (3) parameters for the
antenna antenna are detailed below:
For layer 1
The Improved design (1) parameters for the  L1= 10.40 mm(Antenna length)
antenna are detailed below:  W1= 25.4 mm (Antenna Width)
For layer 1  H1= 1.48 mm (Substrate Height)
 L1= 10.40 mm(Antenna length)  ∈ ( , , ) = (13,13,10.2)
 W1= 25.4 mm (Antenna Width)  Mt=.038 mm (Metal Thickness)
 H1= 1.48 mm (Substrate Height) For layer 2
 ∈ ( , , ) = (6,6,10.2)  L2= 10.40 mm(Antenna length)

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 Life Science Journal 2015;12(4)
 W2= 25.4 mm (Antenna Width)
 H2= 1.48 mm (Substrate Height)
 ∈ ( , , ) = (13,13,10.2)
 Mt=.038 mm (Metal Thickness)
Figure 3.43 Farfield realized gain plot for patch
antenna (∈ ( , , ) = (13,13,10.2))
The Improved design (4) parameters for the
antenna are detailed below:
For layer 1
 L1= 10.40 mm(Antenna length)
 W1= 25.4 mm (Antenna Width)
 H1= 1.48 mm (Substrate Height)
 ∈ ( , , ) = (13,13,10.2)
 Mt=.038 mm (Metal Thickness)
For layer 2
 L2= 10.40 mm(Antenna length)
 W2= 25.4 mm (Antenna Width)
 H2= 1.48 mm (Substrate Height)
 ∈ ( , , ) = (18,18,10.2)
 Mt=.038 mm (Metal Thickness)
Figure 4.28 Farfield realized gain plot for patch
antenna (∈ ( , , ) = (18,18,10.2))
Acknowledgements:
Authors are grateful to Mr. Mubsher for all
support to carry out this work.
Corresponding Author:
Mamdoh Gharbi
4/8/2015
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http://www.lifesciencesite.com
Department of Electrical and Computer Engineering,
King Abdul Aziz University
P O Box: 80204, Jeddah 21589
E-mail: mamdohgharbi@yahoo.com
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