WPM3012

WPM3012

Single P-Channel, -30V, -3.1A, Power MOSFET Http://www.sh-willsemi.com

VDS (V) Rds(on) (ȍ)

0.058@ VGS=10V
-30
0.080@ VGS=4.5V

SOT-23
Descriptions D
3

The WPM3012 is P-Channel enhancement MOS

Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use 1 2
G S
in DC-DC conversion, power switch and charging
circuit. Standard Product WPM3012 is Pb-free and
Pin configuration (Top view)
Halogen-free.

Features
W32*
z Trench Technology
1 2
z Supper high density cell design
W32 = Device Code
z Excellent ON resistance for higher DC current
* = Month (A~Z)
z Extremely Low Threshold Voltage
Marking
z Small package SOT-23

Order information
Applications

Device Package Shipping

z Driver for Relay, Solenoid, Motor, LED etc.
WPM3012-3/TR SOT-23 3000/Reel&Tape
z DC-DC converter circuit

z Power Switch

z Load Switch

z Charging

Will Semiconductor Ltd. 1 2015/08/25 – Rev. 1.2

 WPM3012
Absolute Maximum ratings

Parameter Symbol 10 S Steady State Unit

Drain-Source Voltage VDS -30
V
Gate-Source Voltage VGS ±20
TA=25°C -3.1 -2.9
Continuous Drain Current a ID A
TA=70°C -2.5 -2.3
TA=25°C 0.9 0.8
Maximum Power Dissipation a PD W
TA=70°C 0.6 0.5
TA=25°C -2.8 -2.6
Continuous Drain Current b ID A
TA=70°C -2.2 -2.1
TA=25°C 0.7 0.6
Maximum Power Dissipation b PD W
TA=70°C 0.5 0.4
Pulsed Drain Current c IDM -15 A
Operating Junction Temperature TJ 150 °C
Lead Temperature TL 260 °C
Storage Temperature Range Tstg -55 to 150 °C

Thermal resistance ratings

Parameter Symbol Typical Maximum Unit

t ” 10 s 105 130
Junction-to-Ambient Thermal Resistance a RșJA
Steady State 120 155
t ” 10 s 130 160 °C/W
Junction-to-Ambient Thermal Resistance b RșJA
Steady State 145 190
Junction-to-Case Thermal Resistance Steady State RșJC 60 75

a Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper
b Surface mounted on FR-4 board using minimum pad size, 1oz copper
c Pulse width<380μs, Duty Cycle<2%
d Maximum junction temperature TJ=150°C.

Will Semiconductor Ltd. 2 2015/08/25 – Rev. 1.2

 WPM3012
Electronics Characteristics (Ta=25oC, unless otherwise noted)

Parameter Symbol Test Conditions Min Typ Max Unit

OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage BVDSS VGS = 0 V, ID = -250uA -30 V
Zero Gate Voltage Drain Current IDSS VDS = -24V, VGS = 0V -1 uA
Gate-to-source Leakage Current IGSS VDS = 0 V, VGS = ±20V  ±100 nA
ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = -250uA -1.5 -1.9 -2.5 V

b, c
VGS = -10V, ID = -3.1A 58 68
Drain-to-source On-resistance RDS(on) mŸ
VGS = -4.5V, ID = -2.8A 80 95

Forward Transconductance gFS VDS = -5 V, ID =-5.0A 8.2 s

CAPACITANCES, CHARGES
Input Capacitance CISS VGS = 0 V, 654
Output Capacitance COSS f = 1.0 MHz, 67 pF
Reverse Transfer Capacitance CRSS VDS = -20V 56
Total Gate Charge QG(TOT) 1.55 
VGS = -10 V,
Threshold Gate Charge QG(TH) 2.03 
VDS = -15V, nC
Gate-to-Source Charge QGS 3.15 
ID = -3.1A
Gate-to-Drain Charge QGD 12.9 
SWITCHING CHARACTERISTICS
Turn-On Delay Time td(ON) VGS = -10 V, 9.6
Rise Time tr VDS = -15 V, 4.0
ns
Turn-Off Delay Time td(OFF) RL=5Ÿ, 34.8
Fall Time tf RG=15 Ÿ 7.2
BODY DIODE CHARACTERISTICS
Forward Voltage VSD VGS = 0 V, IS = -1.0A -0.8 -1.5 V

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 WPM3012
Typical Characteristics (Ta=25oC, unless otherwise noted)
15 15
VGS= -4.5V
VGS= -10V
-IDS_Drain to Source Current (A)

VDS= -5V
12
VGS= -4.0V 12

-IDS - Drain Current (A)

0
T=-50 C
0
9 T=25 C
9

6
6 0
VGS= -3.0V T=125 C
3
3

0
0 1 2 3 4 5 6 0
0 1 2 3 4 5 6
-VDS_Drain to Source Voltage (V)
-VGS - Gate to Drain Voltage (V)

Output characteristics Transfer characteristics

120 200

ID=-3.1A
VGS=-4.5V 160
RDS(on)- On-Resistance (m:)

100
RDS(on)- On-Resistance (m:)

80 120

VGS=-10V
60 80

40 40

20 0
2 4 6 8 10 12 14 2 4 6 8 10
-IDS-Drain to Source Current (A) -VGS-Gate to Source Voltage(V)

On-Resistance vs. Drain current On-Resistance vs. Gate-to-Source voltage

90 2.4
-VGS(TH) - Threshold Voltage (V)

80 VGS=-10V IDS=-3.1A 2.2 IDS= -250uA

RDS(on)- On-Resistance (m:)

70 2.0

60 1.8

50 1.6

40 1.4

30 1.2
-50 0 50 100 150 -25 0 25 50 75 100 125 150
0
Temperature ( C) Temperature ( C)
0

On-Resistance vs. Junction temperature Threshold voltage vs. Temperature

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 WPM3012

1000 1.0

-ISD - Source to Drain Current (A)

VGS=0 f=1MHZ
800 0.8
C-Capacitance (pF)

0
T=150 C
600 0.6

400 0.4
Crss
Cout T=25 C
0

200 Cin 0.2

0 0.4 0.5 0.6 0.7 0.8 0.9

0 4 8 12 16 20
-VDS - Drain to Source Voltage (V) -VSD - Source to Drain Voltage(V)

Capacitance Body diode forward voltage

100
10

Limited by RDS(on)
8 10
100 μs
I D - Drain Current (A)
Power (W)

6
1 ms
1

4 10 ms

0.1 100 ms
2 TA = 25 °C TA = 25 °C
Single Pulse 1 s, 10 s
BVDSS Limited DC

0 0.01
0.01 0.1 1 10 100 1000 0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
Time (s)

Single pulse power Safe operating power

10
VGS=-10V, ID=-3.1A, VDS=-15V
9
-VGS-Gate to Source Voltage(V)

0
0 3 6 9 12 15

Qg(nc)

Gate Charge Characteristics

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 WPM3012
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2

0.1 Notes:
0.1
0.05 PDM

t1
0.02 t2
t1
1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA =120 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4 10 -3 10 -2 10 -1 1 10 100 1000
Square Wave Pulse Duration (s)

Transient thermal response (Junction-to-Ambient)

Will Semiconductor Ltd. 6 2015/08/25 – Rev. 1.2

 WPM3012
Package outline dimensions
SOT-23

Dimensions in millimeter
Symbol
Min. Typ. Max.
A 0.900 1.025 1.150
A1 0.000 0.050 0.100
A2 0.900 0.975 1.050
b 0.300 0.400 0.500
c 0.080 0.115 0.150
D 2.800 2.900 3.000
E 1.200 1.300 1.400
E1 2.250 2.400 2.550
e 0.950TYP
e1 1.800 1.900 2.000
L 0.550REF
L1 0.300 0.500
© 0e 8e

Will Semiconductor Ltd. 7 2015/08/25 – Rev. 1.2