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TPCA8023-H
High-Efficiency DC/DC Converter Applications
Unit: mm
Notebook PC Applications 0.4±0.1
0.5±0.1 1.27 0.05 M A
6.0±0.3
5.0±0.2
0.15±0.05
• Small footprint due to a small and thin package
• High-speed switching
1 4 0.595
• Small gate charge: QSW = 5.0 nC (typ.)
5.0±0.2
• Low drain-source ON-resistance: RDS (ON) = 9.8 mΩ (typ.)
A
0.95±0.05
0.166±0.05
1 4 1.1±0.2
• Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 1 mA)
0.6±0.1
3.5±0.2
Absolute Maximum Ratings (Ta = 25°C) 4.25±0.2
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
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TPCA8023-H
Thermal Characteristics
Marking (Note 5)
TPCA Type
8023-H
※ Lot No.
Note 1: The channel temperature should not exceed 150°C during use
Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)
FR-4 FR-4
25.4 × 25.4 × 0.8 25.4 × 25.4 × 0.8
(Unit: mm) (Unit: mm)
(a) (b)
Week of manufacture
(01 for first week of year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the calendar year)
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TPCA8023-H
Electrical Characteristics (Ta = 25°C)
RL = 1.36Ω
Switching time ns
4.7 Ω
VDD ∼
− 15 V
Turn-off time toff < ⎯ 21 ⎯
Duty = 1%, tw = 10 μs
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TPCA8023-H
8 6 5 ID – VDS 8 65 ID – VDS
10 20
10 4 3.2 Common source 10 3.4 Common source
4 Ta = 25°C
4.5 Ta = 25°C Pulse test
Pulse test 4.5
8 16 3.3
(A)
(A)
3.1
3.2
ID
ID
6 12
3.0
Drain current
Drain current
3.1
4 8
2.9
2 4 VGS = 2.9V
VGS = 2.7V
0 0
0 0.2 0.4 0.6 0.8 1 0 0.4 0.8 1.2 1.6 2
0.3
VDS
ID
24 ID = 21 A
Drain-source voltage
Drain current
0.2
16
11
Ta = −55°C 0.1
100
8
25 5
0 0
0 1 2 3 4 5 0 2 4 6 8 10
Common source
VDS = 10 V
Pulse test
|Yfs|
Drain-source ON-resistance
100
RDS (ON) (mΩ)
Forward transfer admittance
Ta = −55°C
4.5
25
10 100 10
VGS = 10 V
1
Common source
Ta = 25 ℃
Pulse test
0.1 1
0.1 1 10 100 0.1 1 10 100
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TPCA8023-H
Common source
(A)
Pulse test
Drain-source ON-resistance
20
IDR
ID = 5A,11A,21A 10
4.5 3
RDS (ON) (mΩ)
1
VGS = 4.5 V ID = 5A,11A,21A VGS = 0 V
10
Common source
Ta = 25°C
VGS = 10 V Pulse test
5 1
−80 −40 0 40 80 120 160 0 −0.2 −0.4 −0.6 −0.8 −1 −1.2
2
Ciss
(pF)
1000
Gate threshold voltage
C
1.5
Capacitance
Coss
1
100 Crss
Common source
Common source
VGS = 0 V 0.5
VDS = 10 V
f = 1 MHz
ID = 1 mA
Ta = 25°C
Pulse test
10 0
0.1 1 10 100 −80 −40 0 40 80 120 160
Dynamic input/output
characteristics
50 20
Common source
ID = 21 A
(V)
(V)
40 Ta = 25°C
16
Pulse test
VDS
VGS
30 12
Drain-source voltage
Gate-source voltage
VDS VDD = 6 V
12 V
20 8
24 V
10 4
0 0
0 5 10 15 20 25 30
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TPCA8023-H
rth – tw
1000
(1) Device mounted on a glass-epoxy board (a) (Note 2a)
(2) Device mounted on a glass-epoxy board (b) (Note 2b) (2)
rth
(3) Tc=25℃
100
Transient thermal impedance
(1)
10
(°C/W)
(3)
1
0.1
Single - pulse
0.01
0.0001 0.001 0.01 0.1 1 10 100 1000
PD – Ta PD – Tc
3 50
(1)Device mounted on a glass-epoxy
board(a) (Note 2a)
(W)
(W)
PD
t=10s
2
Drain power dissipation
(2) 30
1.5
20
1
10
0.5
0 0
0 40 80 120 160 0 40 80 120 160
10ms *
10
1
* Single – pulse Ta = 25℃
Curves must be derated
linearly with increase in
temperature. VDSS max
0.1
0.1 1 10 100
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TPCA8023-H
7 2007-12-26