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3, DECEMBER 2017
TABLE I
Abstract—A compact wirebond packaged phase-leg SiC/Si
PRICE COMPARISON OF SIC AND SI DISCRETE DEVICES
hybrid module was designed, developed, and tested. Details of the
Part number Type & voltage Rated current Price
layout and gate drive designs are described. The IC chip for gate ST 1200 V 65 A @ 25°C 35.13 $ for 1 pc.
drive is carefully selected and compared. Dual pulse test SCT50N120 SiC MOSFET 50 A @ 100°C 30.95 $ for 25 pc.
confirmed that, the switching loss of hybrid module is close to IXYS 1200 V 68 A @ 25°C 109 $ for 1 pc.
pure SiC MOSFET module, and it is much less than pure Si IGBT IXFN70N120SK SiC MOSFET 48 A @ 100°C 99.14 $ for 25 pc.
device. The cost of hybrid module is closer to Si IGBT. CREE 1200 V 90 A @ 25°C 69.8 $ for 1 pc.
C2M0025120D SiC MOSFET 60 A @ 150°C 67.12 $ for 100 pc.
Index Terms—Gate drive design, hybrid module, SiC device. Rohm 1200 V 72 A @ 25°C 44.21 $ for 1 pc.
SCT3030KL SiC MOSFET 51 A @ 150°C 39.52 $ for 25 pc.
Microsemi 1200 V 56 A @25°C 78.36 $ for 1 pc.
APT80SM120J SiC MOSFET 40 A @125°C 66.49 $ for 100 pc.
I. INTRODUCTION Infineon 1200 V 100 A @25°C 7.12 $ for 1 pc.
I
IGW60T120FKS Si IGBT 60 A @100°C 5.33 $ for 100 pc.
N recent years, the silicon carbide (SiC) power A1
semiconductor has emerged as an attractive alternative that IXYS 1200 V 160 A @25°C 13.44 $ for 1pc.
IXYH82N120C3 Si IGBT 82 A @110°C 8.52 $ for 1000pc.
pushes the limitations of junction temperature, power rating,
and switching frequency of silicon (Si) devices [1-3]. Some Reference [5], reported the development of a 1200 kV/880A
manufactures have successfully fabricated SiC MOSFETs SiC module which can handle megawatt. The cost was
which demonstrated these advantages. SiC MOSFETs have estimated close to 2500$. Reference [6] presented the design
very low on-state voltage drop and faster switching speed and development of a HP1 package based SiC three-phase
compared to Si devices. However, the price of SiC MOSFET is module, and the power rating is 1200 V/ 300A for each
commonly 3 to 5 times of the same rating Si IGBT device. phase-leg. There were 36 SiC MOSETs and 36 SiC diodes in
Table I shows the comparison between some discrete SiC the module, which makes the cost for each module close to
MOSFETs and some discrete Si IGBT [4]. 7000 $. An Int-A-Pak version module was also presented in [6].
Although the advanced properties of SiC MOSFET will lead Without any SiC diode, the cost is cut to 5000$. All these
converters to higher power density [3], some issues still need to modules are too expensive for regular industrial applications.
be resolved to take full advantage of SiC. For example, almost TABLE II
all the SiC modules are still using Si device based conventional PRICE COMPARISON OF SIC AND SI MODULES
packages. These packaging structures have large parasitic Manufacture and Part Rated voltage
Topology Price (US dollar)
number and current
parameters (15~70 nH) and limit the operation temperature Infineon SiC MOSFET 1200 V Boost 119.04 $ for 1 pc.
(less than 150°C). Furthermore, most of these SiC modules are DF11MR12W1M1_B11 50 A module 107.88 $ for 25 pc.
lack of reliability testing data. Unfortunately, these modules are Rohm SiC MOSFET 1200 V Phase-leg 506.97 $ for 1 pc.
BSM180D12P3C007 180 A module 476.42 $ for 5 pc.
very expensive and some product modules are listed in Table II Rohm SiCMOSFET 1200 V Phase-leg 668.18 $ for 1 pc.
[4]. BSM300D12P2E001 300 A module 654.43 $ for 5 pc.
CREE/ Wolfspeed SiC 1200 V Phase-leg 330 $ for 1 pc.
CAS120M12BM2 193 A module
Infineon Si IGBT 1200 V Phase-leg 145.33 $ for 1 pc.
FF400R12KT3 580 A module 136.38 $ for 25 pc.
This work is supported by The National key research and development Microsemi 1200 V Phase-leg 184.36$ for 100 pc.
program of China (2016YFB0100600), the Key Program of Bureau of Frontier APTGLQ400A120T6G 625 A module
Sciences and Education, Chinese Academy of Sciences
(QYZDBSSW-JSC044), and the National Natural Science Foundation of China Because of bipolar carriers and long tail current at turn-off
(No. 51507166). phase, IGBTs can’t switch over 20kHz generally. On the
Puqi Ning is with the Institute of Electrical Engineering, Chinese Academy
of Sciences , Beijing, 100190 China and Collaborative Innovation Center of
contrary, MOSFETs have no tail current but the rated currents
Electric Vehicles in Beijing (e-mail: npq@ mail.iee.ac.cn). become too small when the voltage is over 900 V. In many
Lei Li is with the Institute of Electrical Engineering, Chinese Academy of future applications, for example, Wireless power transmission
Sciences , Beijing, 100190 China (e-mail: lilei@ mail.iee.ac.cn).
Xuhui Wen is with the Institute of Electrical Engineering, Chinese Academy
(WPT) for Electric Vehicle (EV), more electric aircraft (MOA)
of Sciences , Beijing, 100190 China (e-mail: wxh@ mail.iee.ac.cn). and solid state transformer (SST), the converter requires high
Han Cao is with the Institute of Electrical Engineering, Chinese Academy of speed switching, medium/high power, low on-resistance and
Sciences , Beijing, 100190 China (e-mail: chan@ mail.iee.ac.cn).
NING et al. : A HYBRID SI IGBT AND SIC MOSFET MODULE DEVELOPMENT 361
reasonable price. In many countries, the line frequency of WPT Based on datasheets, the conduction performance of hybrid
of EV is set to 85 kHz in standards, which bring a tough module is shown in Fig.2. The conduction loss of hybrid
challenge to develop a 30 kW WPT fast charging converter. module is very close to Si IGBT, while the cost is also close to
To overcome the challenges, the combination of IGBT and Si IGBT.
MOSFET devices was investigated by compensating
disadvantages [7]. Among them, hybrid switches based on Output Characteristics
parallel connection between Si IGBT and SiC MOSFET were 350
350
studied [8-10]. In these paper, the losses and costs of hybrid 300
300
250
switches have been investigated and verified. In [11], to further 250
200
200
reduce the switching loss, the switching pattern using
Current (A)
150
150
commutation was analyzed in detail. 100
100
Most of these papers focus on discrete device hybrid, which 5050
SiC MOS Si IGBT Hybrid
demonstrate any larger current case (none is over 100 A). This 0 0.5 1 1.5
1.5 2 2.5
2.5 33 3.5
3.5
TABLE IV
MATERIAL SELECTION FOR 200 ºC MODULE.
Baseplate Aluminum Silicon Carbide (AlSiC), 3 mm thick
Substrate Aluminum nitride (AlN) direct bond copper (DBC) with
15 mils thick AlN, 8 mils thick copper
Fig. 1. Hybrid module circuit. Die attachment Au-Sn solder (280ºC melting point)
Wirebond 6 mils aluminum wire for gate pads
Some high performance dies are chosen for this module, and 15 mils aluminum wire for other pads
the properties are listed in Table III. Based on the safe operation Encapsulant Nusil R-2188
suggestion from [11], the total current of SiC MOSFETs and Si Power terminal 0.8 mm thick copper terminal
Signal terminal 1 mm diameter copper pin
IGBTs are selected as maximum 1:4 matching.
Table III The next step is layout design, and a genetic algorithm (GA)
PROPERTIES OF SIC/SI DEVICES
Device SiC Si IGBT Si Diode
based layout optimization in [12] is utilized to generate a high
MOSFET performance design. The design space of the module layout is
Part number CPM2-1200- IRG8CH97K10F IRD3CH82DB6 fully searched. By considering the reduction of the parasitic
0025B parameters, minimizing the footprint, and balancing the
Rated voltage (V) 1200 1200 1200
Rated current (A) 90@25°C 100@175°C 150@175°C thermal dissipation path, the decoupling gate paths, and the
50@150°C power paths, devices are placed and routed on the substrate.
Dimensions 4.04 mm × 10.5 mm × 9.07 mm× The compact layout is shown in Fig.3, and the fabricated
6.44 mm 9.3 mm 9.07 mm
Cost 75$ 8.26$ 4.96$ prototype is shown in Fig.4.
362 CES TRANSACTIONS ON ELECTRICAL MACHINES AND SYSTEMS, VOL. 1, NO. 3, DECEMBER 2017
voltage exceeds the threshold voltage of VGE and a fault IV. GATE DRIVE DESIGN WITH MILLER CLAMP
re-turn-on happens (shown in Fig.7). Si IGBTs share part of Negative off-state gate voltage is generally used to prevent
current from SiC MOSFET, and the tail current happens again. the Miller effect [13]. However, in each leg of this hybrid
The same phenomenons can be found from [9] and [11]. module, the SiC MOSFET and Si IGBTs shares the same
ground. SiC MOSFET can only accept a -5 V negative off gate
voltage. While -5 V can’t fully mitigate the miller effect and tail
current. At the same time, additional isolated DC source should
be added to the gate drive, which increase the complexity and
the total cost.
V/200 A. The gate resistor of SiC MOSFET is 47Ω, and the To compare the hybrid module performance, a 1200 V/150 A
gate resistor of Si IGBT is 15Ω. The experimental results are prototype was fabricated with the same package, which is
shown in Fig.12. It is noticed that the miller effect is mitigated shown in Fig.14. The module was tested up to 600 V/ 150 A by
within an acceptable range and the induced gate voltage of Si the same dual pulse test setup. One of experimental waveform
IGBT didn’t pass the threshold voltage. Thus no obvious tail is shown in Fig.15.
current was found in the tests.
Turn off at 600V/ 200 A Fig. 14. 1200 V 150 A SiC MOSFET module.
The gate resistor was also adjusted for pure SiC MOSFET
module. Test results of 15 Ω set and 10 Ω set are listed in Table
5. Lower speed drive (15 Ω set) has larger power loss during
turn on and turn off (close to 4 times), but smaller overshoot
voltage (about 60 V).