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E Field-Effect Transistors
Part 1
by Ray Marston Ray Marston explains FET
(Field-Effect Transistor)
T ield-Effect Transistors
basics in this opening
episode of this new
four-part series.
1 MAY 2000/Nuts & Volts Magazine ©T & L Publications, Inc. All rights reserved.
configuration can be terminal device, or may be internally
obtained by using connected to the source, making a
the basic Figure 11 three-terminal device.
circuit. In practice, An important point about the
fairly accurate bias- IGFET/MOSFET is that it is also avail-
ing techniques (dis- able as an enhancement-mode device,
cussed in Part 2 of in which its conduction channel is nor-
this series) must be mally closed but can be opened by
Figure 6. An n-channel Figure 7. An n-channel JFET can be used as used in these cir- applying forward bias to its gate.
JFET can be used as a an electronic chopper. cuits. Figure 13 shows the basic con-
voltage-controlled switch. struction and the symbol of the n-
THE IGFET/MOSFET channel version of such a device.
Here, no n-channel drain-to-source
The second (and most impor- conduction path exists through the p-
tant) family of FETs are those known type substrate, so with zero gate bias
under the general title of IGFET or there is no conduction between drain
Figure 8. An
n-channel JFET MOSFET. In these FETs, the gate ter- and source; this feature is indicated in
can be used as a minal is insulated from the semicon- the symbol of Figure 13(b) by the
constant-current ductor body by a very thin layer of sil- gaps between source and drain.
generator. icon dioxide, hence the title To turn the device on, significant
‘Insulated Gate Field Effect positive gate bias is needed, and
Transistor,’ or IGFET. Also, the devices when this is of sufficient magnitude, it
generally use a ‘Metal-Oxide Silicon’ starts to convert the p-type substrate
avalanches like a zener diode. In stant as VDS is increased beyond the semiconductor material in their con- material under the gate into an n-
either case, the JFET suffers no dam- knee value. Thus, when VDS is below struction, hence the alternative title channel, enabling conduction to take
age if gate currents are limited to a the JFET’s knee value, the drain-to- of MOSFET. place.
few mA. source terminals act as a resistor, RDS, Figure 12 shows the basic con- Figure 14 shows the typical trans-
(4). Note in Figure 4 that, for with a value dictated by VGS, and can struction and the standard symbol of fer characteristics of an n-channel
each VGS value, drain current ID rises thus be used as a voltage-variable the n-channel depletion-mode FET. It enhancement-mode IGFET/MOSFET,
linearly from zero as the drain-to- resistor, as in Figure 5. resembles the JFET, except that its and Figure 15 shows the VGS/ID
source voltage (VDS) is increased Typically, RDS can be varied from gate is fully insulated from the body curves of the same device when
from zero up to some value at which a few hundred ohms (at VGS = 0) to of the FET (as indicated by the Figure powered from a 15V supply. Note
a ‘knee’ occurs on each curve, and thousands of megohms (at VGS = VP), 12(b) symbol) but, in fact, operates that no ID current flows until the gate
that ID then remains virtually con- enabling the JFET to be used as a on a slightly different principle to the voltage reaches a ‘threshold’ (VTH)
voltage-controlled switch (Figure 6) JFET. value of a few volts, but that beyond
or as an efficient ‘chopper’ (Figure 7) It has a normally-open n-type this value, the drain current rises in a
that does not suffer from offset-volt- channel between drain and source, non-linear fashion.
age or saturation-voltage problems. but the channel width is controlled by Also note that the transfer graph
Also note in Figure 4 that when the electrostatic field of the gate bias. is divided into two characteristic
VDS is above the knee value, the ID The channel can be closed by applying regions, as indicated (in Figure 14) by
value is controlled by the VGS value suitable negative bias, or can be the dotted line, these being the ‘tri-
and is almost independent of VDS, increased by applying positive bias. ode’ region and the ‘saturated’
i.e., the JFET acts as a voltage-con- In practice, the FET substrate may region. In the triode region, the
trolled current generator. The JFET be externally available, making a four- device acts like a voltage-controlled
can be used as a fixed-value current
generator by either tying the gate to
the source as in Figure 8(a), or by Figure 12.
Figure 9. Basic n-channel
common-source amplifier applying a fixed negative bias to the Construction (a)
JFET circuit. gate as in Figure 8(b). Alternatively, it and symbol (b)
can (when suitably biased) be used as of n-channel
a voltage-to-current signal amplifier. depletion-mode
(5). FET ‘gain’ is specified as IGFET/MOSFET.
transconductance, gm, and denotes
the magnitude of change of drain
current with gate voltage, i.e., a gm
of 5mA/V signifies that a VGS varia-
tion of one volt produces a 5mA Figure 13.
change in ID. Note that the form I/V Construction (a)
is the inverse of the ohms formula, and symbol (b)
so gm measurements are often of n-channel
enhancement-mode
expressed in ‘mho’ units. Usually, gm IGFET/MOSFET.
Figure 10. Basic n-channel is specified in FET data sheets in
common-drain terms of mmhos (milli-mhos) or
(source-follower) µmhos (micro-mhos). Thus, a gm of
JFET circuit. 5mA/V = 5-mmho or 5000-µmho.
In most practical applications,
the JFET is biased into the linear
region and used as a voltage amplifi-
er. Looking at the n-channel JFET, it
can be used as a common source Figure 14.
amplifier (corresponding to the bipo- Typical transfer
lar npn common emitter amplifier) characteristics of
by using the basic connections in n-channel
enhancement-mode
Figure 9. IGFET/MOSFET.
Alternatively, the common drain
or source follower (similar to the
bipolar emitter follower) configura-
tion can be obtained by using the
Figure 11. Basic n-channel connections in Figure 10, or the com-
common-gate JFET circuit.
mon gate (similar to common base)
©T & L Publications, Inc. All rights reserved. Nuts & Volts Magazine/MAY 2000 2
MOSFET, the main signal current bottom of its V-groove caused an material.
flows ‘laterally’ (see Figures 3, 12, excessive electric field at this point Several manufacturers produce
and 13) through the device’s con- and restricted the device’s operating power MOSFETs that each comprise a
ductive channel. This channel is very voltage. Subsequent to the original large array of parallel-connected low-
thin, and maximum operating cur- VFET introduction, Intersil introduced power lateral (rather than horizontal)
rents are consequently very limited their own version of the ‘VMOS’ tech- MOSFET cells that share the total
(typically to maximum values in the nique, with a U-shaped groove (plus operating current equally between
range 2 to 40mA). other modifications) that improved them; the device thus acts like a sin-
In post-1970 times, many manu- device reliability and gave higher max- gle high-power MOSFET. These high-
facturers have tried to produce viable imum operating currents and volt- power devices are known as lateral
high-power/high-current versions of ages. In 1980, Siliconix added these MOSFETs or L-MOSFETs, and give a
the FET, and the most successful of and other modifications to their own performance that is particularly useful
these have relied on the use of a ‘ver- VFET devices, resulting in further in super-fi audio power amplifier
tical’ (rather than lateral) flow of cur- improvements in performance. applications.
rent through the conductive channel Note that, in parallel-connected
Figure 15.
Typical VGS/ID of the device. One of the best known OTHER POWER FETs MOSFETs (as used in the internal
characteristics of of these devices is the ‘VFET,’ an structure of the HEXFET and L-MOS-
n-channel enhancement-mode power MOSFET Several manufacturers have pro- FET devices described above), equal
enhancement-mode which was first introduced by duced viable power FETs without current sharing is ensured by the con-
IGFET/MOSFET Siliconix way back in 1976. using ‘V’- or ‘U’-groove techniques, duction channel’s positive tempera-
Figure 17 shows the basic struc- but still relying on the vertical flow of ture coefficient; if the current in one
ture of the original Siliconix VFET. It current between drain and source. In MOSFET becomes excessive, the
has an essentially four-layer struc- the 1980s, Hitachi produced both p- resultant heating of its channel raises
Figure 16. ture, with an n-type source layer at channel and n-channel power MOS- its resistance, thus reducing its cur-
Internally- the top, followed by a p-type ‘body’ FET devices with ratings up to 8A and rent flow and tending to equalize it
protected layer, an epitaxial n-type layer, and 200V; these devices were intended with that of other parallel-connected
n-channel (at the bottom) an n-type drain layer. for use mainly in audio and low-RF MOSFETs. This feature makes such
depletion-mode Note that a ‘V’ groove (hence the applications. power MOSFETs almost immune to
IGFET/MOSFET. ‘VFET’ title) passes through the first Supertex of California and thermal runaway problems.
two layers and into the third layer of Farranti of England pioneered the Today, a vast range of power
the device, and is electrostatically development of a range of power MOSFET types are manufactured.
connected (via an MOSFETS with the general title of ‘Low voltage’ n-channel types are
insulating silicon ‘vertical DMOS.’ These featured high readily available with voltage/current
dioxide film) to operating voltages (up to 650V), high ratings as high as 100V/75A, and
the gate terminal. current rating (up to 16A), low on ‘high voltage’ ones with ratings as
If the gate is resistance (down to 50 milliohms), high as 500V/25A.
shorted to the and very fast operating speeds (up to One of the most important
source, and the 2GHz at 1A, 500MHz at 10A). recent developments in the power-
drain is made pos- Siemens of West Germany used a MOSFET field has been the introduc-
itive, no drain-to- modified version of DMOS, known as tion of a variety of so-called ‘intelli-
source current SIPMOS, to produce a range of n- gent’ or ‘smart’ MOSFETs with built-
flows, because channel devices with voltage ratings in overload protection circuitry; these
the diode formed as high as 1kV and with current rat- MOSFETs usually carry a distinctive
by the p and n ings as high as 30A. registered trade name. Philips
Figure 17. Basic structure of the VFET materials is One International Rectifier solu- devices of this type are known as
power device. reve r s e - b i a s e d . tion to the power MOSFET problem is TOPFETs (Temperature and Overload
But if the gate is a device which, in effect, houses a Protected MOSFETs); Figure 19
resistor; in the saturated region, it made positive to the source, the vast array of parallel-connected low- shows (in simplified form) the basic
acts like a voltage-controlled con- resulting electrostatic field converts power vertical MOSFETs or ‘cells’ internal circuitry and the circuit sym-
stant-current generator. the area of p-type material adjacent which share the total current equally bol of the TOPFET.
The basic n-channel MOSFETs of to the gate into n-type material, thus between them, and thus act like a sin- The Siemens version of the
Figures 12 and 13 can — in principle creating a conduction channel in the gle high-power MOSFET, as indicated smart MOSFET is known as the PRO-
— be converted to p-channel devices position shown in Figure 17 and in Figure 18. These devices are named FET. PROFET devices incorporate pro-
by simply transposing their p and n enabling current to flow vertically HEXFET, after the hexagonal structure tection against damage from short
materials, in which case their sym- from the drain to the source. of these cells, which have circuits, over temperature, overload,
bols must be changed by reversing As the gate becomes more posi- a density of about 100,000 per and electrostatic discharge (ESD).
the directions of their substrate tive, the channel width increases, square centimeter of semiconductor International Rectifier produce a
arrows. enabling the
A number of sub-variants of the drain-to-source
MOSFET are in common use. The current to
type known as ‘DMOS’ uses a dou- increase as the
ble-diffused manufacturing tech- drain-to-source Figure 18. The IR HEXFET comprises
nique to provide it with a very short resistance a balanced matrix of parallel-
conduction channel and a conse- decreases. This connected low-power MOSFETs,
quent ability to operate at very high basic VFET can which are equivalent to a single
high-power MOSFET.
switching speeds. Several other thus pass reason-
MOSFET variants are described in the ably high cur-
remainder of this opening episode. rents (typically
Note that the very high gate up to 2A) with-
impedance of MOSFET devices out creating
makes them liable to damage from excessive current
electrostatic discharges and, for this density within Figure 19. The basic
reason, they are often provided with the channel internal circuitry (a)
internal protection via integral diodes regions. and the circuit symbol
or zeners, as shown in the example The original (b) of the TOPFET
in Figure 16. Siliconix VFET (Temperature and
design of Figure Overload Protected
VFET DEVICES 17 was success- MOSFET).
ful, but imper-
In a normal small-signal JFET or fect. The sharp
3 MAY 2000/Nuts & Volts Magazine ©T & L Publications, Inc. All rights reserved.
an internally pro- known as CMOS, and rely on the use
Figure 20. Normal circuit tected high-voltage of complementary pairs of MOSFETs.
symbol of the IGBT high-current bipo- Figure 21 illustrates basic CMOS prin-
(Insulated Gate Bipolar lar transistor out- ciples. The basic CMOS device com-
Transistor). put. Figure 20 prises a p-type and n-type pair of
shows the normal enhancement-mode MOSFETs, wired
circuit symbol of in series, with their gates shorted
range of smart n-channel MOSFET the IGBT. Devices of this type usually together at the input and their drains
known as SMARTFETs; these incor- have voltage/current/power ratings tied together at the output, as
porate protection against damage ranging from as low as shown in Figure 21(a). The pair are
from short circuits, over tempera- 600V/6A/33W (in the device known meant to use logic-0 or logic-1 digital
ture, overvoltage, and ESD. as the HGTD3N603), to as high as input signals, and Figures 21(b) and
Finally, yet another recent and 1200V/520A/3000W (in the device 21(c), respectively, show the device’s
important development in the n- known as the MG400Q1US51). equivalent circuit under these condi-
channel power MOSFET field, has tions.
been the production — by various CMOS BASICS When the input is at logic-0, the
manufacturers — of a range of high upper (p-type) MOSFET is biased fully
power devices known as IGBTs One major FET application is in on and acts like a closed switch, and
(Insulated Gate Bipolar Transistors), digital ICs. The best known range of the lower (n-type) MOSFET is biased
which have a MOSFET-type input and such devices use the technology off and acts like an open switch; the
output is thus effectively connected
to the positive supply line (logic-1) via
a series resistance of about 100R.
When the input is at logic-1, the
MOSFET states are reversed, with Q1
acting like an open switch and Q2
acting like a closed switch, so the
output is effectively connected to
ground (logic-0) via 100R. Note in
both cases that the entire signal cur-
rent is fed to the load, and none is
Figure 21. Basic CMOS circuit (a), and its equivalent with shunted off by the CMOS circuitry;
(b) a logic-0 input and (c) a logic-1 input. this is a major feature of CMOS tech-
nology. NV
©T & L Publications, Inc. All rights reserved. Nuts & Volts Magazine/MAY 2000 4
F PRINCIPLES AND CIRCUITS
E Part 2
by Ray Marston
Field-Effect Transistors Ray Marston looks at
current when the gate bias is zero, VGS. If the gate voltage is
and the current is reduced (‘deplet- large relative to VGS, ID is Parameter 2N3918 MPF102
ed’) by reverse-biasing the gate set mainly by Rs and is not
terminal. greatly influenced by VGS VDS max (= max. drain-to-source voltage) 25V 25V
Most JFETs are n-channel variations. This system thus VDG max (= max. drain-to-gate voltage) 25V 25V
(rather than p-channel) devices. enables ID values to be set VGS max (= max. gate-to-source voltage) -25V -25V
Two of the oldest and best known with good accuracy and IDSS (= drain-to-source current with VGS = 0V) 2-20mA 2-20mA
n-channel JFETs are the 2N3819 without need for individual IGSS max (= gate leakage current at 25° C) 2nA 2nA
and the MPF102, which are usually component selection. PT max (= max. power dissipation, in free air) 200mW 310mW
housed in TO92 plastic packages Similar results can be
with the connections shown in obtained by grounding the Figure 2. Basic characteristics of the 2N3819 and MPF102 n-channel JFETs.
Figure 1; Figure 2 lists the basic gate and taking the bot-
characteristics of these two devices. tom of Rs to a large negative volt- er with offset gate biasing. Overall
This month’s article looks at age, as in Figure 4(b). voltage gain is about 0.95. C2 is a
basic usage information and appli- The third type of biasing system bootstrapping capacitor and raises
cations of JFETs. All practical cir- is shown in Figure 5, in which con- the input impedance to 44M, shunt-
cuits shown here are specifically stant-current generator Q2 sets the ed by 10pF.
designed around the 2N3819, but ID, irrespective of the JFET character- Figure 8 shows a hybrid (JFET
will operate equally well when istics. This system gives excellent plus bipolar) source follower. Offset
using the MPF102. biasing stability, but at the expense biasing is applied via R1-R2, and
of increased circuit complexity constant-current generator Q2 acts
JFET BIASING and cost. as a very high-impedance source
In the three biasing systems load, giving the circuit an overall
The JFET can be used as a lin- described, Rg can have any value up voltage gain of 0.99. C2 bootstraps Figure 3. Basic JFET
ear amplifier by reverse-biasing its to 10M, the top limit being imposed R3’s effective impedance up to ‘self-biasing’ system.
gate relative to its source terminal, by the volt drop across Rg caused
thus driving it into the linear region. by gate leakage currents, which may
Three basic JFET biasing techniques upset the gate bias.
are in common use. The simplest of
these is the ‘self-biasing’ system SOURCE FOLLOWER
shown in Figure 3, in which the Figure 4.
CIRCUITS Basic JFET
gate is grounded via Rg, and any
‘offset-biasing’
current flowing in Rs drives the When used as linear amplifiers, system.
source positive relative to the gate, JFETs are usually used in either the
thus generating reverse bias. source follower (common drain) or
Suppose that an ID of 1mA is common-source modes. The source
wanted, and that a VGS bias of -2V2 follower gives a very high input
is needed to set this condition; the impedance and near-unity voltage
correct bias can obviously be gain (hence the alternative title of
obtained by giving Rs a value of ‘voltage follower’).
2k2; if ID tends to fall for some rea- Figure 6 shows a simple self-
son, VGS naturally falls as well, and biasing (via RV1) source follower;
thus makes ID increase and counter RV1 is used to set a quiescent R2
the original change; the bias is thus volt-drop of 5V6. The circuit’s actual
self-regulating via negative feed- input-to-output voltage gain is 0.95.
back. A degree of bootstrapping is
In practice, the VGS value need- applied to R3 and increases its effec-
ed to set a given ID varies widely tive impedance; the circuit’s actual
between individual JFETS, and the input impedance is 10M shunted by
only sure way of getting a precise ID 10pF, i.e., it is 10M at very low fre-
value in this system is to make Rs a quencies, falling to 1M0 at about Figure 5. Basic JFET
Figure 6. Self-biasing ‘constant-current’ biasing
variable resistor; the system is, how- 16kHz and 100k at 160kHz, etc. system.
ever, accurate enough for many Figure 7 shows a source follow- source-follower. Zin = 10M.
1 JUNE 2000/Nuts & Volts Magazine ©T & L Publications, Inc. All rights reserved.
Figure 12. Common-source Figure 13. ‘Hybrid’ common-source
Figure 8. Hybrid source follower. Zin = 500M. amplifier with offset gate biasing. amplifier.
1000M, which is shunted by the ance of 2M2. of 0.5V, 5V, and 50V. R4 protects
JFET’s gate impedance; the input Q1’s gate against damage if exces-
impedance of the complete circuit DC VOLTMETERS sive input voltage is applied to the
is 500M, shunted by 10pF. circuit.
Note then if the high effective Figure 14 shows a JFET used to To use the Figure 14 circuit,
value of input impedance of this make a very simple and basic three- first trim RV2 to give zero meter
circuit is to be maintained, the range DC voltmeter with a maxi- reading in the absence of an input
output must either be taken to mum FSD sensitivity of 0.5V and an voltage, and then connect an accu-
external loads via an additional input impedance of 11M1. Here, rate 0.5V DC to the input and trim
emitter follower stage (as shown R6-RV2 and R7 form a potential RV1 to give a precise full-scale
dotted in the diagram) or must be divider across the 12V supply and — meter reading. Repeat these adjust-
taken only to fairly high imped- if the R7-RV2 junction is used as the ments until consistent zero and full-
Figure 7. Source follower with ance loads. circuit’s zero-voltage point — sets scale readings are obtained; the
offset biasing. Zin = 44M. the top of R6 at +8V and the bot- unit is then ready for use.
COMMON SOURCE tom of R7 at -4V. Q1 is used as a In practice, this very simple cir-
AMPLIFIERS source follower, with its gate cuit tends to drift with variations in
grounded via the R1 to R4 network supply voltage and temperature,
Figure 9 shows a simple self- and is offset biased by taking its and fairly frequent trimming of the
biasing common source amplifier; source to -4V via R5; it consumes zero control is needed. Drift can be
RV1 is used to set a quiescent about 1mA of drain current. greatly reduced by using a zener-
5V6 across R3. The RV1-R2 bias- In Figure 14, R6-RV2 and Q1-R5 stabilized 12V supply.
ing network is AC-decoupled via act as a Wheatstone bridge net- Figure 15 shows an improved
C2, and the circuit gives a voltage work, and RV2 is adjusted so that low-drift version of the JFET volt-
gain of 21dB (= x12), and has a the bridge is balanced and zero cur- meter. Q1 and Q2 are wired as a
±3dB frequency response that rent flows in the meter in the differential amplifier, so any drift
spans 15Hz to 250kHz and an absence of an input voltage at Q1 occurring on one side of the circuit
input impedance of 2M2 shunted gate. Any voltage applied to Q1 is automatically countered by a simi-
by 50pF. (This high shunt value is gate then drives the bridge out of lar drift on the other side, and
due to Miller feedback, which balance by a proportional amount, good stability is obtained. The cir-
multiplies the JFET’s effective which can be read directly on the cuit uses the ‘bridge’ principle, with
Figure 9. Simple self-biasing gate-to-drain capacitance by the meter. Q1-R5 forming one side of the
common-source amplifier. circuit’s x12 Av value.) R1 to R3 form a range multipli- bridge and Q2-R6 forming the
Figure 10 shows a simple self- er network that — when RV1 is cor- other. Q1 and Q2 should ideally be
biasing headphone amplifier that rectly adjusted — gives FSD ranges a matched pair of JFETs, with IDSS
can be used with headphone
impedances of 1k0 or greater. It
has a built-in volume control
(RV1), has an input impedance of
2M2, and can use any supply in
the 9V to 18V range.
Figure 11 shows a self-biasing
add-on pre-amplifier that gives a
voltage gain in excess of 20dB,
has a bandwidth that extends
beyond 100kHz, and has an input
impedance of 2M2. It can be
Figure 10. Simple headphone used with any amplifier that can Figure 14. Simple three-range
amplifier. provide a 9V to 18V power DC voltmeter.
source.
JFET common source ampli-
fiers can — when very high biasing Figure 15.
accuracy is needed — be designed Low-drift
using either the ‘offset’ or ‘con- three-range
stant-current’ biasing technique. DC volt-
Figures 12 and 13 show circuits of meter.
these types. Note that the ‘offset’
circuit of Figure 12 can be used
with supplies in the range 16V to
20V only, while the hybrid circuit
of Figure 13 can be used with any
supply in the 12V to 20V range.
Both circuits give a voltage gain of
Figure 11. General-purpose 21dB, a ±3dB bandwidth of 15Hz
add-on pre-amplifier.
to 250kHz, and an input imped-
©T & L Publications, Inc. All rights reserved. Nuts & Volts Magazine/JUNE 2000 2
3mV to 300mV large DC negative control voltage is
RMS). fed to Q1’s gate; Q1 thus acts as a
The circuit can high resistance under this condition,
accept input signal so only a small part of the input sig-
levels up to a maxi- nal is fed to Q2’s base, and the cir-
mum of 500mV cuit gives low overall gain.
RMS Q1 and R4 Thus, the output level stays
are wired in series fairly constant over a wide range of
to form a voltage- input signal levels; this characteris-
controlled attenua- tic is useful in cassette recorders,
tor that controls intercoms, and telephone ampli-
Figure 17. Voltage-controlled the input signal fiers, etc.
amplifier/attenuator. level to common Finally, Figure 19 shows a JFET
Figure 16. VLF astable multivibrator. emitter amplifier used to make a DC-to-AC converter
tive control voltage is fed to Q2, which has its output buffered or ‘chopper’ that produces a square-
values matched within 10%. The cir- Q1 gate, the JFET acts like a near- via emitter follower Q3. wave output with a peak amplitude
cuit is set up in the same way as infinite resistance and causes zero Q3’s output is used to generate equal to that of the DC input volt-
that of Figure 14. signal attenuation, so the circuit (via C5-R9-D1-D2-C4-R5) a DC con- age.
gives high overall gain but, when trol voltage that is fed back to Q1’s In this case, Q1 acts like an
MISCELLANEOUS the gate bias is zero, the FET acts gate, thus forming a DC negative- electronic switch that is wired in
JFET CIRCUITS like a low resistance and causes feedback loop that automatically series with R1 and is gated on and
heavy signal attenuation, so the cir- adjusts the overall voltage gain so off at a 1kHz rate via the Q2-Q3
To conclude this month’s arti- cuit gives an overall signal loss. that the output signal level tends to astable circuit, thus giving the DC-to-
cle, Figures 16 to 19 show a miscel- Intermediate values of signal remain constant as the input signal AC conversion. Note that Q1’s gate-
laneous collection of useful JFET cir- attenuation and overall gain or loss level is varied, as follows. drive signal amplitude can be varied
cuits. The Figure 16 design is that can be obtained by varying the con- When a very small input signal via RV1; if too large a drive is used,
of a very-low-frequency (VLF) trol voltage value. is applied to the circuit, Q3’s output Q1’s gate-to-source junction starts
astable or free-running multivibrator; Figure 18 shows how this volt- signal is also small, so negligible DC to avalanche, causing a small spike
its on and off periods are controlled age-controlled attenuator technique control voltage is fed to Q1’s gate; voltage to break through the drain
by C1-R4 and C2-R3, and R3 and R4 can be used to make a ‘constant Q1 thus acts as a low resistance and give an output even when no
can have values up to 10M. volume’ amplifier that produces an under this condition, so almost the DC input is present.
With the values shown, the cir- output signal level change of only full input signal is applied to Q2 To prevent this, connect a DC
cuit cycles at a rate of once per 20 7.5dB when the input signal level is base, and the circuit gives high over- input and then trim RV1 until the
seconds, i.e., at a frequency of varied over a 40dB range (from all gain. output is just on the verge of
0.05Hz; start button S1 When a large input decreasing; once set up in this way,
must be held closed for signal is applied to the cir- the circuit can be reliably used to
Figure 18. Constant-volume amplifier.
at least one second to cuit, Q3’s output signal chop voltages as small as a fraction
initiate the astable tends to be large, so a of a millivolt. NV
action.
Figure 17 shows —
in basic form — how a
JFET and a 741 op-amp
can be used to make a
voltage-controlled ampli-
fier/attenuator. The op-
amp is used in the
inverting mode, with its
voltage gain set by the
R2/R3 ratio, and R1 and
the JFET are used as a
voltage-controlled input
attenuator. Figure 19. DC-to-AC converter or ‘chopper’ circuit.
When a large nega-
3 JUNE 2000/Nuts & Volts Magazine ©T & L Publications, Inc. All rights reserved.
F PRINCIPLES AND CIRCUITS
E Part 3
by Ray Marston
Field-Effect Transistors Ray Marston looks at practical
Figure 5.
Functional
diagram of
the 4007UB
dual CMOS
pair plus
inverter. Figure 6. Internal-
Figure 4. Typical VGS/ID protection network
characteristics of 4007UB n-channel (within dotted lines) on
enhancement-mode MOSFET. each input of the 4007UB.
1 JULY 2000/Nuts & Volts Magazine ©T & L Publications, Inc. All rights reserved.
Figure 8.
Method of
biasing
n-channel
4007UB
MOSFETs for
use as a linear
inverting
amplifier (with
Figure 7. Individual 4007UB complementary pairs medium input
can be disabled by connecting them as CMOS impedance). Figure 9. High impedance
inverters and grounding their inputs. version of the inverting
amplifier.
©T & L Publications, Inc. All rights reserved. Nuts & Volts Magazine/JULY 2000 2
two MOSFETs of the CMOS stage,
as shown in the ‘micropower’ cir-
cuit of Figure 18.
This diagram also lists the Figure 16.
effects that different resistor values Typical AV
have on the drain current, voltage and
gain, and bandwidth of the amplifi- frequency
er when operated from a 15V sup- characteristics
ply and with its output loaded by a of the
10M/15pF oscilloscope probe. linear-mode
Figure 15. Method of biasing basic CMOS
the simple CMOS inverter for Note that the additional resis-
tors of the Figure 18 circuit amplifier.
linear operation.
increase the output impedance of
half-supply volts. the amplifier (the output imped-
Figure 16 shows the typical ance is roughly equal to the R1-AV
voltage gain and frequency charac- product), and this impedance and
teristics of this circuit when operat- the external load resistance/capaci-
ed at three alternative supply rail tance has a great effect on the
values; this graph assumes that the overall gain and bandwidth of the
amplifier output is feeding into the circuit.
high impedance of a 10M/15pF When using a 10k value for Figure 17.
oscilloscope probe and, under this R1, for example, if the load capaci- Typical ID/VDD
condition, the circuit has a band- tance is increased (from 15pF) to characteristics
width of 2.5MHz when operating 50pF, the bandwidth falls to about of the
linear-mode
from a 15V supply. 4kHz, but if the capacitance is CMOS
As would be expected from reduced to 5pF, the bandwidth amplifier.
the voltage transfer graph of increases to 45kHz. Similarly, if the
Figure 14, the distortion character- resistive load is reduced from 10M
istics of the CMOS linear amplifier to 10k, the voltage gain falls to
are quite good with small-ampli- unity; for significant gain, the load
tude signals (output amplitudes up resistance must be large relative to
to 3V peak-to-peak with a 15V sup- the output impedance of the
ply), but the distortion then amplifier.
increases as the output approaches The basic (unbiased) CMOS
the upper and lower supply limits. inverter stage has an input capaci-
Unlike a bipolar transistor circuit, tance of about 5pF and an input
the CMOS amplifier does not ‘clip’ resistance of near-infinity. Thus, if
excessive sinewave signals, but pro- the output of the Figure 18 circuit
gressively rounds off their peaks. is fed directly to such a load, it
Figure 17 shows the typical shows a voltage gain of x30 and a
drain-current versus supply-voltage bandwidth of 3kHz when R1 has a
characteristics of the CMOS linear value of 1M0; it even gives a useful
amplifier. The current typically gain and bandwidth when R1 has Figure 19. Linear CMOS
varies from 0.5mA at 5V, to a value of 10M, but consumes a amplifier wired as x10
12.5mA at 15V. quiescent current of only 0.4µA. inverting amplifier.
In many applications, the qui-
escent supply current of the PRACTICAL CMOS
4007UB CMOS amplifier can be
usefully reduced — at the cost of The CMOS linear amplifier can
reduced amplifier bandwidth — by easily be used in either its standard
wiring external resistors in series or micropower forms to make a vari-
with the source terminals of the ety of fixed-gain amplifiers, mixers,
integrators, active filters, and oscilla-
tors, etc. A selection of such circuits
is shown in Figures 19 to 23. Figure 18. Micropower 4007UB
Figure 21. Figure 19 shows the practical CMOS linear amplifier, showing
Linear circuit of an x10 inverting amplifier. method of reducing ID, with
CMOS The CMOS stage is biased by feed- Figure 20. Linear CMOS
performance details. amplifier wired as
amplifier back resistor R2, and the voltage
wired as unity-gain four-input
an gain is set at x10 by the R1/R2 audio mixer.
integrator. ratio. The input impedance of the The circuit has four input terminals,
circuit is 1M0, and equals the R1 and the voltage gain between each
value. input and the output is fixed at enabling the circuit to oscillate. If
Figure 20 shows the above cir- unity by the relative values of the the user wants the crystal to pro-
cuit modified for use as an audio 1M0 input resistor and the 1M0 vide a frequency accuracy within
‘mixer’ or analog voltage adder. feedback resistor. 0.1% or so, Rx can be replaced by
Figure 21 shows a short and C1-C2 can be omitted.
the basic CMOS For ultra-high accuracy, the correct
Figure 23. amplifier used as a values of Rx-C1-C2 must be individ-
Micropower simple integrator. ually determined (the diagram
version of the Figure 22 shows shows the typical range of values).
crystal
oscillator. the linear CMOS Finally, Figure 23 shows a
amplifier used as a ‘micropower’ version of the CMOS
crystal oscillator. The crystal oscillator. In this case, Rx is
amplifier is linearly actually incorporated in the amplifi-
biased via R1 and er. If desired, the output of this
Figure 22. Linear CMOS provides 180° of oscillator can be fed directly to the
amplifier wired as a phase shift at the input of an additional CMOS
crystal oscillator. crystal resonant fre- inverter stage, for improved wave-
quency, thus form shape/amplitude. NV
3 JULY 2000/Nuts & Volts Magazine ©T & L Publications, Inc. All rights reserved.
F PRINCIPLES AND CIRCUITS
E Part 4
by Ray Marston
Field-Effect Transistors
T Ray Marston looks at practical VMOS power FET circuits in this final episode of
this four-part series.
1 AUGUST 2000/Nuts & Volts Magazine ©T & L Publications, Inc. All rights reserved.
Figure 10.
Method of
boosting the
output of
Figure 9 by
driving three
VN66AFs in
Figure 6. parallel.
Typical
saturation
characteristics
of the
VN66AF. Figure 11. If
inductive loads
such as relays
(a) or bells,
buzzers, or
speakers (b) are
used in digital
switching
circuits,
protection
speed analog power switch. diodes must
be wired as
DIGITAL CIRCUITS shown.
©T & L Publications, Inc. All rights reserved. Nuts & Volts Magazine/AUGUST 2000 2
wired in the drain-to-gate negative
DC LAMP CONTROLLERS feedback loop and sets the quiescent
drain voltage at roughly half-supply
Figure Figures 16 to 18 show three value, so that maximal signal level
15. simple but useful DC lamp controller swings can be accommodated before
Warble- circuits that can be used to control clipping occurs.
tone the brilliance of any 12V lamp with When — in the Figure 19 circuit
six
watt a power rating of up to six watts. A — R3 has a value of zero ohms, the
alarm. VMOS power FET can, for many pur- circuit exhibits an input impedance
poses, be regarded as a voltage con- that, because of the AC negative
trolled constant-current generator; feedback effects, is roughly equal to
thus, in Figure 16, the VMOS drain the parallel values of R1 and R2 divid-
current (and thus the lamp bright- ed by the circuit’s voltage gain (RL x
ness) is directly controlled by the gM. If R3 has a finite value, the input
variable voltage of RV1’s slider. The impedance is slightly less than the R3
circuit thus functions as a manual value, unless AC feedback-decoupling
lamp dimmer. capacitor C2 is fitted in place, in
The Figure 17 circuit is a simple which case, the input impedance is
modification of the above design, slightly greater than the R3 value.
the action being such that the lamp Figure 20 shows how to bias the
turns on slowly when the switch is VN66AF for common drain (voltage
closed as C1 charges up via R3, and follower) operation. Potential divider
turns off slowly when the switch is R1-R2 sets the VMOS gate at a quies-
opened as C1 discharges via R3. cent value slightly greater than half-
The Figure 18 circuit is an effi- supply voltage. When the R3 value is
Figure 16. Simple DC cient ‘digital’ lamp dimmer which zero, the circuit input impedance is
Figure 17. Soft-start controls the lamp brilliance without equal to the parallel values of R1 and
lamp dimmer. lamp switch.
causing significant power loss across R2. When the R3 value is finite, the
the VMOS device. The two 4011B input impedance equals the R3 value
CMOS gates form an astable multivi- plus the parallel R1-R2 values. The
brator with a mark/space ratio that input impedance can be raised to a
is fully variable from 10:1 to 1:10 via value many times greater than R3 by
RV1; its output is fed to the VN66AF adding the C2 ‘bootstrap’ capacitor
Figure 18. gate, and enables the mean lamp to the circuit.
High- brightness to be varied from virtually Finally, Figure 21 shows a practi-
efficiency fully-off to fully-on. In this circuit, the cal example of a VMOS linear appli-
DC lamp VMOS device is alternately switched cation. The circuit is wired as a class-
dimmer. fully on and fully off, so power loss- A power amplifier which, because of
es are negligible. the excellent linearity of the VN66AF,
gives remarkably little distortion for
LINEAR CIRCUITS so simple a design. The VN66AF
must be mounted on a good
VMOS power FETs can, when heatsink in this application. When
suitably biased, easily be used in the design is used with a purely
In the manually activated either the common source or com- resistive 8R0 load, the amplifier
Figure 19. Biasing delayed-turn-off circuit of Figure 13, mon drain (voltage follower) linear bandwidth extends up to 10MHz. NV
technique for C1 charges rapidly via R1 when modes. The voltage gain in the com-
FET
linear common push-button switch PB1 is closed, mon source mode is equal to the
source operation. and discharges slowly via R2 when product of RL and the device’s gM or
PB1 is open. The load thus activates forward transconductance. In the
as soon as PB1 is closed, but does case of the VN66AF, this gives a
not deactivate until some 10s of sec- voltage gain
onds after PB1 is released. of 0.25 per
In the simple relay-output timer ohm of RL
circuit of Figure 14, the VMOS value, i.e., a
device is driven by the output of a gain of x4 Figure 21.
manually triggered monostable or with a 16R Simple class-A
one-shot multivibrator designed load, or x25 audio power
around two gates of a 4001B CMOS with a 100R amplifier gives
1% THD at 1W.
IC; the relay turns on as soon as PB1 load. The volt-
simple but useful digital applications is closed, and then turns off auto- age gain in
of the VN66AF. The water- or touch- matically again some pre-set ‘delay the common
activated power switch of Figure 12 time’ later. The delay is variable from drain mode is
could not be simpler: when the a few seconds to a few minutes via slightly less
touch contacts and water probes are RV1. than unity.
open, zero volts are on the gate of Finally, Figure 15 shows the A VMOS power
the VN66AF, so the device passes practical circuit of an inexpensive FET can be biased
zero current. When a resistance but very impressive alarm-call gener- into the linear com- Figure 20.
(zero to 10s of megohms) is placed ator that produces a ‘dee-dah’ mon source mode Biasing
across the contacts (by contact with sound like that of a British police car by using the stan- techniques for
skin resistance) or probes (by water siren. The alarm can be turned on dard enhancement- linear common
drain (voltage
contact), a substantial gate voltage by closing PB1 or be feeding a ‘high’ mode MOSFET bias- follower)
is developed by potential divider voltage to the R1-R2 junction. The ing technique operation.
action and the VN66AF passes a circuit uses an 8R0 speaker and gen- shown in Figure 19,
high drain current, thus activating erates roughly six watts of output in which the R1-R2
the bell, buzzer, or relay. power. potential divider is
3 AUGUST 2000/Nuts & Volts Magazine ©T & L Publications, Inc. All rights reserved.