Lecture

SWITCHING POWER DEVICES (Reference [5], pages 8-13)

 CLASS ACTIVITY
Answer the following questions:
1) Write the name of the corresponding switching power device below its name:
2) In which aspect the MOSFET may be better than the
IGBT?
3) True or false. For a diode, in the reverse-biased voltage
large current flows through the device.
4) Mention three advantages of using MOSFETs:
5) Is a thyristor turned on only by applying positive
voltage in the gate? Why or why not?
6) What happens with the current when the breakdown
voltage in a diode is reached?
7) Would you recommend for a switching device to works
in breakdown operation mode? Why?
8) Why an overvoltage protection is not needed a JFET?
9) Nowadays, what is the switching device managing the
greatest amount of power? Which is the second one?
10) In thyristor, what is it known as firing angle?
11) In which aspect the MOSFET is worse than the BJT?
12) What is the name of the device acting as a bidirectional
diode?
13) Mention two disadvantages of the BJT?
14) For high power applications would you prefer using a
GTO or a Thyristor? Why?
15) A triac is equivalent to have?
16) What does the acronym SCR mean?
17) Is it possible for a thyristor to be turned off by
switching off the gate pulse?
18) What does the acronym GTO mean? Can a GTO be
turned off? How?
19) What are the main advantages of using a Mos-
controlled thyristor rather than a GTO?
20) In a BJT, what are the operating regions?