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Article history: In this paper, an analytical method for parasitic rotation and displacement calculations of parallelogram
Received 24 November 2008 compliant mechanisms is formulated. Mathematical model is proposed for the geometrical paramet-
Received in revised form 30 April 2009 ric study of parasitic motion, through which the approach to reduce parasitic motion is obtained. The
Accepted 11 May 2009
formulations for calculating the locations of the points on end-effectors with no theoretical parasitic dis-
Available online 18 May 2009
placement are presented. The analytical model predictions are confirmed by the finite element analysis.
Theoretical basis is built for improving the output precision of parallelogram compliant mechanisms.
Keywords:
© 2009 Elsevier Inc. All rights reserved.
Compliant mechanism
Flexure hinge
Parasitic motion
Symmetric structure
1. Introduction eral to a few hundreds of micrometers, and such a small travel range
can be considered as a point relatively to the dimensions of end-
Flexure-based compliant mechanisms are widely utilized in effector. Thus, the parasitic motion of the points on end-effector
ultra precision positioning/scanning systems to achieve nanome- should be calculated, and the point that has the minimum parasitic
ter resolution. To reduce parasitic motion and improve positioning motion will be selected as the best working point.
accuracy, such compliant mechanisms are usually designed as sym- The parallelogram compliant mechanism with beam flexure
metric structures about the motion axes of end-effectors [1–9]. Par- hinges is selected as the research object (Fig. 1), The motion direc-
allelogram compliant mechanisms have relatively smaller volumes tion of the end-effector is parallel with y-axis. The parasitic motion
and simpler structures because of the asymmetry about the motion of any point on the end-effector can be formulated by the dis-
axes (Fig. 1). However, the desired displacement output y in placement ıxD of point D and the displacement ıxE of point E in
y-direction is usually accompanied with parasitic rotation ı in xy- x-direction.
plane and parasitic displacement ıx in x-direction. Thus, the appli- The displacement of point D in x-direction is composed of three
cations of parallelogram mechanisms are limited in the science- parts: the displacement 1 of point B in x-direction caused by the
based engineering field where requires nano-level accuracy. deformation of flexure hinge 1 (Fig. 2(a)); the displacement l3 sin 1
The purpose of this research is to establish the relationship of point D in x-direction caused by the angle 1 which occurs with
between the geometrical parameters and the parasitic motion, and the deformation of flexure hinge 1 (Fig. 2(b)); The displacement 2
thus to reduce the parasitic motion by optimizing the geometrical of point D in x-direction caused by the deformation of flexure hinge
parameters. The methodologies for improving the output precision 2 (Fig. 2(c)).
of parallelogram compliant mechanisms are proposed on the basis The positive direction of x-axis is defined as the positive direc-
of the developed model. tion of displacement, and the clockwise rotation is defined as
the positive direction of angle, the displacement of point D in x-
2. The analytical model direction can be expressed as
0141-6359/$ – see front matter © 2009 Elsevier Inc. All rights reserved.
doi:10.1016/j.precisioneng.2009.05.001
134 Z. Ni et al. / Precision Engineering 34 (2010) 133–138
Fig. 2. The composition of the displacement of point D in x-direction. (a) The displacement caused by the deformation of flexure hinge 1. (b) The displacement caused by the
rotation. (c) The displacement caused by the deformation of flexure hinge 2.
Z. Ni et al. / Precision Engineering 34 (2010) 133–138 135
Table 1
The parameters of loop computing function program.
3.2. The method for calculating the location of the point with no
parasitic displacement
Fig. 3. The composition of the displacement in x-direction of any point on the As there is rotation on the end-effector, the parasitic displace-
end-effector. (a) The displacement caused by the rotation around point E. (b) The ment in x-direction of different points is varied. For a specified
displacement caused by ıxE . parallelogram compliant mechanism, the location of the point with
no parasitic displacement can be obtained by using Eq. (4), and fur-
The expressions of ıij and iF (i = 1, 2, 3) can be obtained by ther the parasitic displacement of any point on the end-effector can
graphical solution, and thus the expressions of Xi (i = 1, 2, 3) can be be calculated.
obtained with ıij and iF from these three equations.
The moments at points A–H can be expressed as follows, respec-
tively:
Fig. 8. The relationship between inertia moments and parasitic rotation based on
the finite element analysis.
4.2. The relationship between the ratio l4 /l3 and parasitic rotation
4.1. The relationship between inertia moments and parasitic When Eq. (4) is used to calculate the location of the point with
rotation ıx = 0, there are usually obvious calculating errors. After a further
investigation, it can be found that the calculating errors are mainly
The parameters of FEM are set as: l1 = 50 mm, l2 = 30 mm, caused by the bending deformation of lever 1 and lever 2.
l3 = 5 mm, l4 = 20 mm, I1 = I4 , I2 = I3 , ε = I1 /I2 = I4 /I3 , model thickness An infinitesimal dx in length of the levers is considered as the
is 8 mm, Young’s modulus E = 70 GPa, Poisson’s ratio = 0.33, input research object (Fig. 10), O1 O2 represents the neutral layer of the
position = 0.5, input displacement: −35 nm along y-axis. Consid-
Fig. 9. The relationship between the ratio l4 /l3 and parasitic rotation based on the
Fig. 7. The relationship between the ratio l4 /l3 and parasitic rotation. finite element analysis.
Z. Ni et al. / Precision Engineering 34 (2010) 133–138 137
Table 2
The geometry parameters of finite element models.
1 100 80 1 7 20 0.220
2 90 50 6 6 10 0.194
3 80 40 5 5 20 0.188
4 70 40 2 5 15 0.179
5 50 30 3 4 12 0.190
Table 3
The locations of ıx = 0 based on Eq. (6) and FEM.
m n − mn h
= In Eq. (6), if the ıx* is set as zero, we can find the expression of
mn 2
y does not have any relation with the input displacement, which
The elongation of the surface on the infinitesimal is indicate that the location without parasitic displacement (ıx* = 0)
Mh on the end-effector is fixed when the input displacement changes.
ı= dx Finite-element simulations are used to verify the above inference.
2EI
Model thickness is 8 mm, Young’s modulus E = 70 GPa, Pois-
The elongation of the surface on lever is son’s ratio = 0.33 and fillet radius r = 0.15 mm (see Fig. 1)
l1 /2 (Tables 2 and 3).
h
= M(x)dx
2EI −l1 /2
6. Conclusions
The elongation of the surface BC on lever 1 and surface GF (Fig. 1)
on lever 2 are 1 and 2 , respectively (the expressions are shown The analytical equations of parasitic motion for parallelogram
in Appendix).Eq. (1) is corrected as compliant mechanism have been developed. A geometrical para-
∗ metric investigation was performed based on the established
ıxD = 1 − l3 × sin 1 + 2 + 1
model. Finite element analysis was also conducted to verify the
Eq. (2) is corrected as developed model. The coincidence between the analytical results
and finite element analysis shows the established model is correct.
ıxE∗ = −3 + l3 × sin 4 − 4 + 2 It is found that the parasitic rotation reduces with the increasing
ratio I1,4 /I2,3 , and l4 /l3 , and the increasing length l1 . Based on the
Eq. (3) is corrected as
achieved analytical model, the location of the point without para-
∗ − ıx∗
ıxD sitic displacement can be calculated, and it is fixed when the input
ı ∗ = E
l2 displacement varies, thus this point can be selected as the working
point.
Eq. (4) is corrected as
∗ + ıx∗
ıxD
ıx∗ = E
+ ı ∗ ×y (5) Acknowledgment
2
ıx∗ ıx∗ + ıx∗ This work is supported by the National Nature Science Founda-
y= ∗
− D ∗ E (6) tion of China [NSFC] No. 50275104.
ı 2ı
Appendix A.
din l3 ((I1 I2 I3 (I2 + I3 ) − I2 I3 (I2 + I3 )I4 + I1 (I22 + l4 I2 I3 + I32 )I4 )l32 + 4I2 I3 (−l2 I1 + I2 + I3 )I4 l3 l4 + 48I1 I2 I3 I4 l42 )
1 =
2l1 ((I1 I2 I3 (I2 + I3 ) + I2 I3 I4 (I2 + I3 ) + I1 (I22 + l4 I2 I3 + I32 )I4 )l32 − 48I1 I2 I3 I4 l3 l4 + 48I1 I2 I3 I4 l42 )
−(din l3 ((I1 I2 I3 (I2 + I3 ) − (I2 I3 (I2 + I3 ) + I1 (I22 + l4 I2 I3 + I32 ))I4 )l32 − 4I1 I2 I3 (−l2 I4 + I2 + I3 )l3 l4 − 48I1 I2 I3 I4 l42 ))
4 =
2l1 ((I1 I2 I3 (I2 + I3 ) + I2 I3 I4 (I2 + I3 ) + I1 (I22 + l4 I2 I3 + I32 )I4 )l32 − 48I1 I2 I3 I4 l3 l4 + 48I1 I2 I3 I4 l42 )
−(3din (12hI1 I2 I3 (I2 + I3 )I4 (l3 − 2l4 ) + I4 (−(I1 I2 I3 (l3 I2 + I3 ) + I2 I3 I4 (I2 + I3 ) + I1 I4 (I22 + l4 I2 I3 + I32 ))l32 + 24I1 I2 I3 (3I2 + I3 + 2I4 )l3 l4 − 48I1 I2 I3 (2I2 + I3 + I4 )l42 )
+((I2 I3 I42 (I2 + I3 ) + I12 (I2 I3 (I2 + I3 ) + (I22 + l4 I2 I3 + I32 )I4 ) + I1 I4 (l4 I2 I3 (I2 + I3 ) + (I22 + l4 I2 I3 + I32 )I4 ))l32 − 48I1 I2 I3 I4 (I1 + I2 + I3 + I4 )l3 l4 + 48I1 I2 I3 I4 (I1 + I2 + I3 + I4 )l42 )))
1 =
bh2 l3 ((I1 I2 I3 (I2 + I3 ) + I2 I3 I4 (I2 + I3 ) + I1 I4 (I22 + l4 I2 I3 + I32 ))l32 − 48I1 I2 I3 I4 l3 l4 + 48I1 I2 I3 I4 l42 )
3din I4 ((I1 I2 I3 (l3 I2 +I3 )+I2 I3 (I2 +I3 )I4 +I1 (I 2 +l4 I2 I3 +I 2 )I4 )l2 +12hI1 I2 I3 (I2 +I3 )(l3 −2l4 )−24I1 I2 I3 (I2 −I3 +2I4 )l3 l4 −48I1 I2 I3 (I3 −I4 )l2 )
2 = 2 3 3 4
bh2 l3 ((I1 I2 I3 (I2 +I3 )+I2 I3 I4 (I2 +I3 )+I1 I4 (I 2 +l4 I2 I3 +I 2 ))l2 −48I1 I2 I3 I4 l3 l4 +48I1 I2 I3 I4 l2 )
2 3 3 4
din E((I2 I3 I42 (I2 + I3 ) + I12 (I2 I3 (I2 + I3 ) + (I22 + l4 I2 I3 + I32 )I4 ) + I1 I4 (l4 I2 I3 (I2 + I3 ) + (I22 + l4 I2 I3 + I32 )I4 ))l32 − 48I1 I2 I3 I4 (I1 + I2 + I3 + I4 )l3 l4
+48I1 I2 I3 I4 (I1 + I2 + I3 + I4 )l42 )
Fin =
l12 l3 ((I1 I2 I3 (I2 + I3 ) + I2 I3 I4 (I2 + I3 ) + I1 I4 (I22 + l4 I2 I3 + I32 ))l32 − 48I1 I2 I3 I4 l3 l4 + 48I1 I2 I3 I4 l42 ) 2
The parameters b, din and Fin denote model thickness, input dis- [4] Choi SB, Han SS, Han YM, Thompson BS. A magnification device for precision
mechanisms featuring piezoactuators and flexure hinges: design and experi-
placement and input force, respectively.
mental validation. Mechanism and Machine Theory 2007;42:1184–98.
[5] Kim D, Kang D, Shim J, Song I, Gweon D. Optimal design of a flexure hinge-
based XYZ atomic force microscopy scanner for minimizing Abbe errors. Review
References
of Scientific Instrument 2005;76:073706.
[6] Wang YL. Modular design process for a micro motion actuator. Mechatronics
[1] Kim JH, Kim SH, Kwak YK. Development and optimization of 3-D bridge-type 2005;15:793–806.
hinge mechanisms. Sensors and Actuators A 2004;116:530–8. [7] Chu CL, Fan SH. A novel long-travel piezoelectric-driven linear nanopositioning
[2] Lobontiu N, Garcia E. Analytical model of displacement amplification and stiff- stage. Precision Engineering 2006;30:85–95.
ness optimization for a class of flexure-based compliant mechanisms. Computers [8] Ma HW, Yao SM, Wang LQ, Zhong Z. Analysis of the displacement amplifi-
and Structures 2003;81:2797–810. cation ratio of bridge-type flexure hinge. Sensors and Actuators A Physical
[3] Choi KB, Kim DH. Monolithic parallel linear compliant mechanism for two 2006;132(2):730–6.
axes ultraprecision linear motion. Review of Scientific Instrument 2006;77: [9] Gao P, Swei SM, Yuan ZJ. A new piezodriven precision micropositioning stage
065106. utilizing flexure hinges. Nanotechnology 1999;10:394–8.