EC1X11 ELECTRON DEVICES AND CIRCUITS 3 0 2 100

(Common to B.E. Computer Science & Engineering & B.Tech. Information

Technology)

AIM:

The aim of this course is to familiarize the student with the principle of operation,
capabilities and limitation of various electronic devices so that he will be able to use
these devices effectively.

OBJECTIVE:

On completion of this course the student will understand

Semiconductor Physics and PN junction

Application of diodes and transistors
Theory of special semiconductor devices and its application
Technology and application of Integrated Circuits

Unit I: Semiconductor Physics and PN Junction 18

Conduction in semiconductors – Holes and electrons in intrinsic semiconductor –

Carrier concentration in intrinsic semiconductor. Fermi level in intrinsic semiconductor;
Impurities and Fermi levels in impure semiconductor; Diffusion. PN junction diode
theory – Band structure – Current components – Volt-Ampere characteristics;
Transition and diffusion capacitance – Switching, storage and transition time. Zener
diodes – Tunnel Diodes. Diode applications – Half wave and Full wave rectifications –
Clippers, Clampers and Voltage multiplier.

Unit II: Bipolar and Field Effect Transistors 18

Transistor construction, Operation and characteristics – Transistor current

components, Analytical expressions for transistor characteristics, Transistor switching
times. JFET – Pinch off voltage – Volt-Ampere characteristics – FET small signal
model. Insulated Gate FET (MOSFET) types - Construction, Operation and
Characteristics. Operation point of Bipolar transistors - Fixed bias circuits – Load line
analysis – Collector to Base bias – Emitter stabilized bias circuit – Self bias – Stability
factor – Thermal runaway – Biasing for FET – Fixed bias – Source self bias – Biasing
against device variation. Biasing for depletion types and enhancement types
MOSFETs.

Unit III: Electronic Circuits 18

Common emitter and Common collector amplifiers – Common source amplifier –

Source follower – Equivalent circuit – Gain and frequency response. Differential
amplifiers, Negative feedback – Characteristics, Feedback topologies, Analysis of
Series shunt feedback amplifier. Stability and Oscillators – Phase shift, Colpitts and
Crystal Oscillator. Transistor bistable and astable multivibrators.
Unit – IV: Special Semiconductor Devices and Applications 18

Silicon controlled rectifier – Construction, Operation and Characteristics – Phase

controlled rectifiers using SCRs. Gate turn off switch, DIAC, TRIAC, AC Voltage
regulator using DIAC and TRIAC. UJT – Characteristics, UJT relaxation oscillator.
Opto isolators – Light emitting diodes – Seven segment displays, LCD – Photo diode
and transistor, Solar Cell. Power MOSFET – Application in SMPS.

Unit V: Integrated Circuits and Applications 18

Fabrication of monolithic integrated circuits – Epitaxy and Diffusion process. Monolithic

operational amplifiers – Characteristics and Specifications. Applications – Inverting,
Non inverting and Difference Amplifiers. Differentiator and Integrator, Voltage to
Current converter, Wein bridge oscillator, Active low pass and band pass filter,
Precision rectifiers, Schmitt trigger and astable multivibrator. Monolithic timer IC 555
– Applications as astable and monostable multivibrator.
TOTAL : 90

TEXT BOOK:

1. Sedra. A.S., Smith. K.C ., Microelectronic Circuits, Oxford University Press,

2004

REFERENCES:

1. Robert L. Boylestad, Louis Nashelsky – Electronic Devices and Circuit Theory,

Prentice Hall of India Pvt. Ltd., Sixth Edition-2000.
2. David A. Bell – Electronic Devices and Circuits - Prentice Hall of India Pvt. Ltd.,
Fourth Edition-2003.
3. Jaeger.R.C and Blalock.T.N., Microelectronic Circuit Design, Tata McGraw Hill,
2006.