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2N4124

Vishay Semiconductors
formerly General Semiconductor

Small Signal Transistor (NPN)

TO-226AA (TO-92)

0.181 (4.6) 0.142 (3.6) Features


• NPN Silicon Epitaxial Transistor for switching and
min. 0.492 (12.5) 0.181 (4.6)

amplifier applications.
• Especially suitable for AF-driver and low-power
output stages.
• As complementary type, the PNP transistor
2N4126 is recommended.

Mechanical Data
Case: TO-92 Plastic Package
Weight: approx. 0.18g
max. ∅ Packaging Codes/Options:
0.022 (0.55)
E6/Bulk – 5K per container, 20K/box
0.098 (2.5) Dimensions in inches
E7/4K per Ammo mag., 20K/box
and (millimeters)

Bottom
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Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.

Parameter Symbol Value Unit


Collector-Emitter Voltage VCEO 25 V
Collector-Base Voltage VCBO 30 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 200 mA
Peak Collector Current ICM 800 mA
Base Current IB 50 mA
(1)
Power Dissipation at Tamb = 25°C Ptot 625 mW
(1)
Thermal Resistance Junction to Ambient Air RΘJA 200 °C/W
Junction Temperature Tj 150 °C
Storage Temperature Range TS –65 to +150 °C

Note: (1) Valid provided that leads at a distance of 2mm from case are kept at ambient temperature.

Document Number 88115 www.vishay.com


07-May-02 1
2N4124
Vishay Semiconductors
formerly General Semiconductor

Electrical Characteristics (T J = 25°C unless otherwise noted)

Parameter Symbol Test Condition Min Typ Max Unit


VCE = 1 V, IC = 2.0 mA 120 — 360
DC Current Gain hFE —
VCE = 1 V, IC = 50 mA — 60 —
Collector-Base Cutoff Current ICBO VCB = 20 V — — 50 nA
Emitter-Base Cutoff Current IEBO VEB = 3 V — — 50 nA
Collector Saturation Voltage VCEsat IC = 50 mA, IB = 5 mA — — 0.3 V
Base Saturation Voltage VBEsat IC = 50 mA, IB = 5 mA — — 0.95 V
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 1 mA 25 — — V
Collector-Base Breakdown Voltage V(BR)CBO IC = 10 µA 30 — — V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 10 µA 5 — — V
VCE = 5 V, IC = 10 mA
Gain-Bandwidth Product fT — 200 — MHz
f = 50 MHz
Collector-Base Capacitance CCBO VCB = 10 V, f = 1MHz — 12 — pF

Ratings and
Characteristic Curves (T A = 25°C unless otherwise noted)

www.vishay.com Document Number 88115


2 07-May-02
2N4124
Vishay Semiconductors
formerly General Semiconductor

Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)

Document Number 88115 www.vishay.com


07-May-02 3
2N4124
Vishay Semiconductors
formerly General Semiconductor

Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)

www.vishay.com Document Number 88115


4 07-May-02
This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.

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