Description and aim of Project:

Light Emitting Diode (LED) has been a popular choice to replace the conventional bulb such as
incandescent in lighting recently. There are many reasons to why this happen. Besides having
higher efficiency, LEDs can also be used ten times longer than the conventional incandescent
bulb [1]. LEDs are basically a p-n junction semiconductor. There are so many types of LEDs that
exist and what differentiates them is the material used to produce them. Different combination of
materials will produce different emission with different wavelength. For example InAs emits
radiation with the wavelength of 4200 nm whereas SiC produces emissions of wavelength 400-
460 nm [1]. There are various types of white LEDs used for solid state lighting which produces
different type of white for example cool white and warm white. In this project we are interested
in the III-Nitride based LEDs such as GaN which are used in solid state lighting. The aim of this
project is to investigate the behaviour of these LEDs in certain areas. The objective of this
project is to understand the physics behind how LEDs work and learn what the important
parameters that needs to be taken into account in the production of LED for solid state lighting.
Besides that, the objectives are to know the way of taking reading of the parameters by using
specific tools and finally to analyse them.

Project Specification:

In this research project, the characteristics of III-Nitride based ultra-energy efficient emitter used
for solid state lighting or basically white LEDs will be studied. Firstly, the mechanisms behind
how LEDs work needs to be understood such as the recombination of electron and hole process.
The characteristics of some commercial white LEDs will be investigated. A few types of white
LEDs available in the market will be bought and some simple soldering will be done. Next, the
LEDs are tested using specific tools
[1]S. Sze and M. Lee, Semiconductor devices. Singapore: Wiley, 2013, pp. 289-301.