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86 Gbit=s SiGe receiver module with high possible characteristic impedance of Z0 ¼ 65 O, given by the

sensitivity for 160  86 Gbit=s DWDM technology. The choice of the termination resistance at the input of
the driven circuits, is a trade-off between high bandwidth and low
system driver power. For a given input voltage level, power can be saved with
termination resistances higher than Z0. However, this results in a low
U. Dümler, M. Möller, A. Bielik, T. Ellermeyer,
bandwith that can be increased by choosing the termination resis-
H. Langenhagen, W. Walthes and J. Mejri
tances lower than Z0. Therefore, in the present design, the best trade-
off was obtained by terminating the microstrip lines with Z0.
A 86 Gbit=s SiGe receiver chip with an on-chip phase-locked loop and
a preamplifier is presented. The chip is mounted and measured in a This optimisation applies in particular also to the 43 GHz clock tree,
module assembly with RF-connectors. At the intended system data where a path from the VCO to the MS-D-FF inputs is 2 mm length in
rate of 86 Gbit=s bit-error-free operation at a high input sensitivity of total. Here, offset is a critical issue, since a path incorporates a lot of
50 mVpp is demonstrated. With an external clock, high-speed capabil- cascaded components, each with a high-frequency gain usually smaller
ity is proven by error-free operation up to 100 Gbit=s. than DC-gain. Thus, along the path, offset rises significantly compared
to clock amplitude. Owing to offset, the amplifying differential circuits
Introduction: In this Letter we report on a 86 Gbit=s receiver module are biased unsymmetrically. This reduces their high-frequency gain
intended for use in a 12.8 Tbit=s DWDM system (160  86 Gbit=s). further and introduces additional offset. The latter is generated, for
The system represents an intermediate step in the German research example, in current switches by mixing the clock signal with the
programme MultiTeraNet, that aims to exhaust the high inherent fibre common-mode representation of itself that appears due to the unsym-
bandwidth in excess of 50 Tbit=s. The circuit is realised in a SiGe metrical (biased) circuit. To avoid severe performance degradation
laboratory technology with ft=fmax ¼ 200=350 GHz [1] and assembled owing to offset, the location, gain and count of each circuit in the
in a simple RF-module. To the best of our knowledge, 86 Gbit=s is a clock tree has to be optimised to keep clock amplitude constant along a
record data rate for an integrated receiver with an on-chip phase- clock path. Therefore, for example in addition to the delay-line
locked loop (PLL) and clock- and data-recovery in any semiconductor elements, three clock buffers (not shown in Fig. 1) are used in each
technology. path between the VCO and MS-D-FFs to compensate for transmission
line loss (up to 6 dB) as well as for distribution of the clock signal.

Circuit description: Fig. 1 shows the block diagram of the receiver


chip, which was already successfully applied to a 40 Gbit=s receiver Module assembly: For the module assembly shown in Fig. 2, a similar
design but without an on-chip PLL [2]. All high-frequency circuit technique as described in [4] was applied. A thin PTFE substrate
blocks as well as all I=Os are carried out in differential current-mode (er ¼ 2.2) with 125 mm thickness is used. This allows realisation of
logic. small coupled 50 O microstrip lines with 300 mm width and 75 mm
spacing. The die is thinned to the substrate thickness yielding small
thermal resistance to the die backside as well as flat and short
(<300 mm) bond wires. The 1.7  2.5 mm die is attached to the
module socket using very thin thermally conductive but electrically
isolating adhesive. Standard K-connectors are used at all RF inter-
faces except for the data input where a 2.4 mm type is preferred.
Measurements at 100 Gbit=s show for this connector an improvement
in eye opening and time jitter by nearly a factor of two compared to
the K-type.

clock
output (43 Gbit/s): data 1 data 2 (43 GHz)

Fig. 1 Block diagram of receiver chip

At the input, a high-sensitivity 50 O preamplifier with adjustable 5V


threshold is used for distributing the data to the three MS-D-FFs of the supply
1:2 Demux and the bang-bang phase-detector (PD) circuit. The PD voltage
utilises the Demux and consists of one additional MS-D-FF and two clock
clock input
symmetrical EXOR gates. It drives a charge pump circuit that controls output
within the PLL loop the on-chip 43 GHz VCO. For the charge pump (43 GHz)
(21.5 GHz)
filter, an external RC series connection is used to allow fine-tuning of
the PLL corner frequency. The RC network is connected directly to the
internal charge pump ground rather than to external ground. This avoids data input (86 Gbit/s)
introduction of supply voltage noise into the PLL loop. Other clock
frequencies, e.g. 50 GHz, can be applied to the external-clock input, but Fig. 2 Module assembly with top cover removed (size 80  54 mm)
without on-chip PLL functionality. 90 clock phase splitting, required
for the PD functionality, is realised by using the delay of a clock buffer
Measurement setup and results: For testing the receiver module, a
circuit. Additional phase adjustment is obtained by summing this
2:1 MUX was developed and realised in the same technology run.
delayed and the original clock at adjustable amplitudes. The same
From three of these MUX modules, a 4:1 MUX was built that drives
adjustable delay element is placed in the 0 clock path (see Fig. 1) in
the receiver module up at data rates of 100 Gbit=s. The input data of
order to compensate for commonly introduced delay deviations in both
the 4:1 MUX is derived from eight fbit=8 RZ-data channels of an
paths, e.g. owing to temperature change. The delay adjustment allows
Agilent ParBert 81250. Each two of these channels were respectively
optimisation of the data sampling phase via a phase adjustment input.
combined by means of a simple resistive power divider. The
The sampling phase can be monitored and adaptively adjusted using the
combined data at fbit=4 drives the 4:1 MUX up to the maximum
output signal of an additional clock phase detector.
data rate of 100 Gbit=s, limited by the external 50 GHz clock
generator.
Line driver design considerations: Well-known design aspects [3] To demonstrate the high sensitivity of the receiver at the intended
have been considered in chip design. Special care has been taken for data rate of fbit ¼ 86 Gbit=s, the input is driven by a single-ended data
on-chip distribution of high-speed data and clock signals between the signal with a low voltage swing of 50 mV inner eye opening (shown in
functional blocks in Fig. 1. Most critical data lines are L1 ¼ 150 mm at Fig. 3a). The output eye diagram at 43 Gbit=s at one data output, as
the input, and three times L2 ¼ 280 mm at the output of the input well as the recovered 43 GHz clock, are shown in Fig. 3c (both single-
buffer. To save power and increase bandwidth, open-collector current ended measurements). For bit error measurements at this reduced input
switches are used to drive differential microstrip lines with the highest amplitude, the data at the receiver output is sampled by an MS-D-FF

ELECTRONICS LETTERS 5th January 2006 Vol. 42 No. 1


with fbit=8 GHz clock frequency. With that sampling frequency, the 50 GHz clock signal is applied to the external clock input (see Fig. 1).
MS-D-FF output shows a data sequence, consisting of every fourth bit The measurement result shows error-free operation for input amplitudes
of the data stream at the receiver output under measurement. This with inner eye opening as low as 80 mVpp . For all measurements power
operation corresponds to a 1:4 demultiplexer functionality, with the consumption is 5.5 W at 5 V supply voltage.
difference that only the one data channel, that is selected by the clock
phase, is available at a time. Each of the four channels was consecu- Acknowledgments: This work has been supported by the German
tively selected by adjusting the corresponding MS-D-FF clock phase. BMBF=DLR under the MultiTeraNet programme. The authors thank
Both receiver outputs were measured applying this method. The bit Agilent Technologies GmbH, Boeblingen, especially J. Moll, for
error rate of the resulting eight data channels was measured with an support and provision of their high performance measurement equip-
Agilent SerialBert N4901B. On all data channels error-free operation ment, as well as L. Altenhain and the MICRAM Rapid Prototyping
was confirmed for sequence lengths of 27  1 as well as 231  1 bits. team for development of the measurement setup and performing the
For the sampling MS-D-FF, one of the two MS-D-FFs in the demulti- measurements.
plexer of an additional identical receiver module was used.

# IEE 2006 31 August 2005


Electronics Letters online no: 20063141
doi: 10.1049/el:20063141
M. Möller (Department of Electronics and Circuits, Saarland
University, Germany)
E-mail: michael.moeller@eus.uni-saarland.de
U. Dümler, A. Bielik, T. Ellermeyer and H. Langenhagen (MICRAM
Microelectronic GmbH, Bochum, Germany)
W. Walthes and J. Mejri (Infineon Technologies AG, Munich,
Germany)
M. Möller: Also with MICRAM Microelectronic GmbH
U. Dümler: Now with Rohde & Schwarz GmbH, Munich, Germany

References
1 Böck, J., Schäfer, H., Knapp, H., Aufinger, K., Wurzer, M., Boguth, S.,
Böttner, T., Stengel, R., Perndl, W., and Meister, T.F.: ‘3.3 ps SiGe bipolar
technology’, IEDM Tech. Dig., 2004, pp. 255–258
2 Bogner, W., Müllner, E., Znidaric, F., Möller, M., Rein, H.-M.,
Fig. 3 86 Gbit=s single-ended receiver input signal, 30 mV=div., 5 ps=div.
Weiske, C.J., and Gottwald, E.: ‘A 40 Gb=s SiGe bipolar chipset for
(Fig. 3a); 100 Gbit=s single-ended MUX output signal, 80 mV=div.,
terabit optical networks’. IEE Seminar on High Performance
2.5 ps=div. (Fig. 3b); (Fig. 3c) upper trace: recovered single-ended
Semiconductor Devices and Circuits for Communications, London,
43 Gbit=s data output signal, lower trace: recovered 43 GHz clock
UK, 2000
signal, both traces single-ended 60 mV=div., 10 ps=div.
3 Rein, H.-M., and Möller, M.: ‘Design considerations of 10 to 50 Gb=s
digital and analog Si-bipolar ICs’, IEEE J. Solid-State Circuits, 1996, 31,
(8), pp. 1076–1090
To demonstrate the inherent high-speed capability of the receiver, the 4 Möller, M., Rein, H.-M., Felder, A., and Meister, T.F.: ‘60 Gbit=s
single-ended 100 Gbit=s signal shown in Fig. 3b, but at reduced time-division multiplexer in SiGe-bipolar technology with special
amplitude, was applied to the receiver input. Of course, at this data- regard to mounting and measuring technique’, Electron. Lett., 1997,
rate the on-chip PLL can no longer be used. Instead, a single-ended 33, pp. 679–680

ELECTRONICS LETTERS 5th January 2006 Vol. 42 No. 1

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