Determine the equilibrium electron and hole concentrations inside a uniformly doped sample of Si under the

following condition:
(a) T = 300 K, Na << Nd, Nd = 1015 /cm3.
(b) T = 300 K, Na = 1016 /cm3, Nd << Na.
(c) T = 300 K, Na = 9 Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016
/cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds.

3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7

5. Solve the following:

Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds.

3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7

5. Solve the following:

Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds. Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG =
1.015 eV at 650 K and ni = 1x1016 /cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds.

3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7

5. Solve the following:

Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds.
3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7

5. Solve the following:

Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds.

3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7

5. Solve the following:

Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds.

3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7

5. Solve the following:

3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7

5. Solve the following:

x 1015 /cm3, Nd = 1016 /cm3.
(d) T = 450 K, Na = 0, Nd = 1014 /cm3.
(e) T = 650 K, Na = 0, Nd = 1014 /cm3
Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds.

3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7

5. Solve the following:
a) If 𝐸𝐹 is positioned at 𝐸𝐶, determine (numerical value) the probability of finding electrons in states at
𝐸𝐶+𝐾𝑇.
b) The probability that a state is filled at the conduction band edge (𝐸𝐶) is precisely equal to the probability
that a s

Determine the equilibrium electron and hole concentrations inside a uniformly doped sample of Si under the
following condition:
(a) T = 300 K, Na << Nd, Nd = 1015 /cm3.
(b) T = 300 K, Na = 1016 /cm3, Nd << Na.
(c) T = 300 K, Na = 9 Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016
/cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds.

3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7

5. Solve the following:

Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds.

3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7

5. Solve the following:

Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds. Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG =
1.015 eV at 650 K and ni = 1x1016 /cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds.

3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7

5. Solve the following:
Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds.

3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7

5. Solve the following:

Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds.

3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7

5. Solve the following:

Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds.

3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7

5. Solve the following:

3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7

5. Solve the following:

x 1015 /cm3, Nd = 1016 /cm3.
(d) T = 450 K, Na = 0, Nd = 1014 /cm3.
(e) T = 650 K, Na = 0, Nd = 1014 /cm3
Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds.

3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7

5. Solve the following:

a) If 𝐸𝐹 is positioned at 𝐸𝐶, determine (numerical value) the probability of finding electrons in states at
𝐸𝐶+𝐾𝑇.
b) The probability that a state is filled at the conduction band edge (𝐸𝐶) is precisely equal to the probability
that a s

Determine the equilibrium electron and hole concentrations inside a uniformly doped sample of Si under the
following condition:
(a) T = 300 K, Na << Nd, Nd = 1015 /cm3.
(b) T = 300 K, Na = 1016 /cm3, Nd << Na.
(c) T = 300 K, Na = 9 Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016
/cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds.

3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7

5. Solve the following:

Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds.

3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7

5. Solve the following:

Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds. Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG =
1.015 eV at 650 K and ni = 1x1016 /cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds.

3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7

5. Solve the following:

Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds.

3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7

5. Solve the following:

Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds.

3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7

5. Solve the following:

Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds.

3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7

5. Solve the following:

3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7

5. Solve the following:
x 1015 /cm3, Nd = 1016 /cm3.
(d) T = 450 K, Na = 0, Nd = 1014 /cm3.
(e) T = 650 K, Na = 0, Nd = 1014 /cm3
Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds.

3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7

5. Solve the following:

a) If 𝐸𝐹 is positioned at 𝐸𝐶, determine (numerical value) the probability of finding electrons in states at
𝐸𝐶+𝐾𝑇.
b) The probability that a state is filled at the conduction band edge (𝐸𝐶) is precisely equal to the probability
that a s

Determine the equilibrium electron and hole concentrations inside a uniformly doped sample of Si under the
following condition:
(a) T = 300 K, Na << Nd, Nd = 1015 /cm3.
(b) T = 300 K, Na = 1016 /cm3, Nd << Na.
(c) T = 300 K, Na = 9 Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016
/cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds.

3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7

5. Solve the following:

Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds.

3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7

5. Solve the following:
Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds. Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG =
1.015 eV at 650 K and ni = 1x1016 /cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds.

3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7

5. Solve the following:

Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds.

3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7

5. Solve the following:

Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds.

3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7

5. Solve the following:

Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds.

3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7

5. Solve the following:

3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7

5. Solve the following:

x 1015 /cm3, Nd = 1016 /cm3.
(d) T = 450 K, Na = 0, Nd = 1014 /cm3.
(e) T = 650 K, Na = 0, Nd = 1014 /cm3
Here EG = 1.08 eV at 450 K and ni = 5 x 1013 /cm3 and EG = 1.015 eV at 650 K and ni = 1x1016 /cm3.
2. Non-degeneracy in a semiconductor is defined as 𝐸𝐶−𝐸𝐹≥ 3𝑘𝑇 and 𝐸𝐹−𝐸𝑉≥ 3𝐾𝑇 then what can be the
maximum Nd and Na such that above condition holds.

3. Develop an expression for the total number of available states/cm3 in the conduction band between
energies 𝐸𝐶 and𝐸𝐶 +𝛾𝐾𝑇, where 𝛾 is any arbitrary constant.

4. Solve Problem 2.7

5. Solve the following:

a) If 𝐸𝐹 is positioned at 𝐸𝐶, determine (numerical value) the probability of finding electrons in states at
𝐸𝐶+𝐾𝑇.
b) The probability that a state is filled at the conduction band edge (𝐸𝐶) is precisely equal to the probability
that a s